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Si4835DDY
New Product
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET
Power MOSFET
100 % R
g
Tested
100 % UIS Tested
APPLICATIONS
Load Switches
- Notebook PCs
- Desktop PCs
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
d
Q
g
(Typ.)
- 30
0.018 at V
GS
= - 10 V - 13
22 nC
0.030 at V
GS
= - 4.5 V - 10
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 C/W.
d. Based on T
C
= 25 C.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS
25
Continuous Drain Current (T
J
= 150 C)
T
C
= 25 C
I
D
- 13
A
T
C
= 70 C - 10.5
T
A
= 25 C - 8.7
a, b
T
A
= 70 C - 7.7
a, b
Pulsed Drain Current
I
DM
- 50
Continuous Source-Drain Diode Current
T
C
= 25 C
I
S
- 4.6
T
A
= 25 C 2.0
a, b
Avalanche Current
L = 0.1 mH
I
AS
- 20
Single-Pulse Avalanche Energy E
AS
20 mJ
Maximum Power Dissipation
T
C
= 25 C
P
D
5.6
W
T
C
= 70 C 3.6
T
A
= 25 C 2.5
a, b
T
A
= 70 C 1.6
a, b
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t 10 s R
thJA
39 50
C/W
Maximum Junction-to-Foot Steady State R
thJF
18 22
S
G
D
P-Channel MOSFET
S
S
D
D
D
S
G D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free)
Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
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2
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
Vishay Siliconix
Si4835DDY
New Product
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 A - 30 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 250 A
- 31
mV/C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
5.5
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 A - 1.0 - 3.0 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= 25 V 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 30 V, V
GS
= 0 V - 1
A
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 C - 5
On-State Drain Current
a
I
D(on)
V
DS
- 10 V, V
GS
= - 10 V - 30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 10 A 0.014 0.018
V
GS
= - 4.5 V, I
D
= - 7 A 0.0245 0.030
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 10 A 23 S
Dynamic
b
Input Capacitance C
iss
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
1960
pF Output Capacitance C
oss
380
Reverse Transfer Capacitance C
rss
325
Total Gate Charge Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 10 A 43 65
nC
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 10 A
22 33
Gate-Source Charge Q
gs
6
Gate-Drain Charge Q
gd
11
Gate Resistance R
g
f = 1 MHz 0.3 1.3 2.5
Turn-On Delay Time t
d(on)
V
DD
= - 15 V, R
L
= 3
I
D
- 5 A, V
GEN
= - 10 V, R
g
= 1
11 22
ns
Rise Time t
r
13 25
Turn-Off DelayTime t
d(off)
32 50
Fall Time t
f
9 18
Turn-On Delay Time t
d(on)
V
DD
= - 15 V, R
L
= 3
I
D
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
44 70
Rise Time t
r
100 160
Turn-Off DelayTime t
d(off)
28 50
Fall Time t
f
15 30
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 C - 4.6
A
Pulse Diode Forward Current I
SM
- 50
Body Diode Voltage V
SD
I
S
= - 2 A, V
GS
= 0 V - 0.75 - 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= - 2 A, dI/dt = 100 A/s, T
J
= 25 C
28 45 ns
Body Diode Reverse Recovery Charge Q
rr
20 40 nC
Reverse Recovery Fall Time t
a
13
ns
Reverse Recovery Rise Time t
b
15
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
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3
Vishay Siliconix
Si4835DDY
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
0 1 2 3 4 5
V
DS
- Drain-to-Source Voltage (V)
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
0.00
0.01
0.02
0.03
0.04
0.05
0 10 20 30 40 50 60
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
)
R
D
S
(
o
n
)
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
0 10 20 30 40 50
I
D
= 10 A
-
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q
g
- Total Gate Charge (nC)
V
G
S
V
DS
= 10 V
V
DS
= 20 V
V
DS
= 15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0 1 2 3 4 5
V
GS
- Gate-to-Source Voltage (V)
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
DV
GS
= 125 C
V
GS
= 25 C
V
GS
= - 55 C
C
rss
0
600
1200
1800
2400
3000
0 6 12 18 24 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C
-
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (C)
(
N
o
r
m
a
l
i
z
e
d
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
o
n
)
V
GS
= - 10 V
I
D
= 10 A
V
GS
= - 4.5 V
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Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
Vishay Siliconix
Si4835DDY
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
I
S
1
0.01
0.001
0.1
10
100
T
J
= 25 C
T
J
= 150 C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 A
V
a
r
i
a
n
c
e
(
V
)
V
G
S
(
t
h
)
T
J
- Temperature (C)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0 2 4 6 8 10
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
)
R
D
S
(
o
n
)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 C
T
J
= 125 C
I
D
= 10 A
0
10
20
30
40
50
P
o
w
e
r
(
W
)
Time (s)
10 1000 0.1 0.01 0.001 100 1
Safe Operating Area
0.01
1
100
0.01
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 ms
10 ms
100 ms
0.1 1 10
10
T
A
= 25 C
Single Pulse
Limited by R
DS(on)
*
1 s
10 s
DC
100
Vishay Siliconix
Si4835DDY
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
www.vishay.com
5
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
3
6
9
12
15
0 25 50 75 100 125 150
T
C
- Case Temperature (C)
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Power, Junction-to-Foot
0.0
1.4
2.8
4.2
5.6
7.0
0 25 50 75 100 125 150
T
C
- Case Temperature (C)
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (C)
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
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6
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
Vishay Siliconix
Si4835DDY
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69953.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 1000 10
-1
10
-4
100
0.2
0.1
0.05
Square Wave Pulse Duration (s)
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
0 1 1 10
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
1
0.1
0.01
0.02
Single Pulse
0.05
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A
1
0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0 8 0 8
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4 3 1 2
5 6 8 7
H E
h x 45
C
All Leads
q
0.101 mm
0.004"
L
B A
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
VI SHAY SI LI CONI X
TrenchFET