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STP6NB80

STP6NB80FP
N - CHANNEL 800V - 1.6 - 5.7A - TO-220/TO-220FP
PowerMESH MOSFET
PRELIMINARY DATA
I TYPICAL RDS(on) = 1.6
I EXTREMELYHIGHdv/dt CAPABILITY
I 100%AVALANCHETESTED
I VERYLOWINTRINSIC CAPACITANCES
I GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Companys
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
I HIGHCURRENT, HIGHSPEEDSWITCHING
I SWITCHMODE POWER SUPPLIES(SMPS)
I DC-AC CONVERTERS FORWELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
INTERNAL SCHEMATIC DIAGRAM
September 1998
TO-220 TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6NB80 STP6NB80FP
V
DS
Drain-source Voltage (V
GS
= 0) 800 V
VDGR Drain- gate Voltage (R
GS
= 20 k) 800 V
V
GS
Gate-source Volt age 30 V
I
D
Drain Current (conti nuous) at T
c
= 25
o
C 5.7 5.7(*) A
I
D
Drain Current (conti nuous) at T
c
= 100
o
C 3.6 2 A
I
DM
() Drain Current (pulsed) 22.8 22.8 A
P
tot
Total Dissipati on at T
c
= 25
o
C 125 40 W
Derati ng Factor 1.0 0.32 W/
o
C
dv/dt (1) Peak Di ode Recovery voltage slope 4 4 V/ns
V
ISO
I nsulation Withstand Voltage (DC) 2000 V
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
() Pulse width limited by safe operating area ( 1) ISD 5.76 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
(*) Limited only maximum temperature allowed
TYPE VDSS RDS(on) ID
STP6NB80
STP6NB80FP
800 V
800 V
< 1.9
< 1.9
5.7 A
5.7 A
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THERMAL DATA
TO-220 TO220-FP
R
thj -case
Thermal Resistance Junction-case Max 1.0 3.1
o
C/W
Rthj -amb
R
thc-si nk
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-si nk Typ
Maximum Lead Temperat ure For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current , Repet iti ve or Not -Repetit ive
(pulse widt h l imi ted by T
j
max)
5. 7 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
314 mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 A VGS = 0 800 V
I
DSS
Zero Gat e Vol tage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing T
c
= 125
o
C
1
50
A
A
I
GSS
Gat e-body Leakage
Current (VDS = 0)
V
GS
= 30 V 100 nA
ON()
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gat e Threshold Vol tage V
DS
= V
GS
I
D
= 250 A 3 4 5 V
R
DS(on)
Static Drain-source On
Resist ance
V
GS
= 10V I
D
= 3 A 1.6 1. 9
I
D(on)
On State Drai n Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
5. 7 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gf s () Forward
Transconductance
VDS > ID(on) x RDS(on)max ID = 3 A 2. 5 4.5 S
C
i ss
C
oss
C
rss
Input Capaci tance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 1250
145
16
1625
190
21
pF
pF
pF
STP6NB80/FP
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Ri se Time
V
DD
= 400 V I
D
= 3 A
R
G
= 4.7 V
GS
= 10 V
19
9
27
13
ns
ns
Q
g
Q
gs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 640 V I
D
= 6 A V
GS
= 10 V 33
11
14
47 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r (Voff)
t
f
t
c
Off -volt age Ri se Ti me
Fal l Time
Cross-over Time
V
DD
= 640V I
D
= 6 A
R
G
= 4.7 V
GS
= 10 V
11
9
16
16
13
23
ns
ns
ns
SOURCE DRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
()
Source-drain Current
Source-drain Current
(pulsed)
5. 7
22. 8
A
A
V
SD
() Forward On Vol tage I
SD
= 6 A V
GS
= 0 1. 6 V
t
rr
Q
rr
IRRM
Reverse Recovery
Ti me
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A di/dt = 100 A/s
V
DD
= 100 V T
j
= 150
o
C
700
5.8
16.5
ns
C
A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
() Pulse width limited by safe operating area
STP6NB80/FP
3/6
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D
1
F
G
L7
L2
Dia.
F
1
L5
L4
H
2
L9
F
2
G
1
TO-220 MECHANICAL DATA
P011C
STP6NB80/FP
4/6
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
3 3.2 0.118 0.126
L2
A
B
D
E
HG
L6

F
L3
G
1
1 2 3
F
2
F
1
L7
L4
TO-220FPMECHANICAL DATA
STP6NB80/FP
5/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from i ts use. No l icense is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics Printed in Italy All Rights Reserved
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STP6NB80/FP
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