2SK3667

2006-11-08 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3667

Switching Regulator Applications


Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)
High forward transfer admittance: |Yfs| = 5.5S (typ.)
Low leakage current: IDSS = 100A (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Absolute Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
600 V
Gate-source voltage V
GSS
30 V
DC (Note 1) I
D
7.5
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
30
A
Drain power dissipation (Tc = 25C)
P
D
45 W
Single pulse avalanche energy
(Note 2)
E
AS
189 mJ
Avalanche current I
AR
7.5 A
Repetitive avalanche energy (Note 3) E
AR
4.5 mJ
Channel temperature T
ch
150 C
Storage temperature range T
stg -55~150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.78 C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25C, L = 5.88 mH, I
AR
= 7.5 A, R
G
= 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

1: Gate
2: Drain
3: Source


JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
2SK3667
2006-11-08 2
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= 25 V, V
DS
= 0 V 10 A
Gate-source breakdown voltage V
(BR) GSS
I
G
=10 A, V
DS
= 0 V 30 V
Drain cut-off current I
DSS
V
DS
= 600 V, V
GS
= 0 V 100 A
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 600 V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 4.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 4 A 0.75 1.0
Forward transfer admittance Y
fs
V
DS
= 10 V, I
D
= 4 A 1.5 5.5 S
Input capacitance C
iss
1300
Reverse transfer capacitance C
rss
12
Output capacitance C
oss

V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
120
pF
Rise time t
r
20
Turn-on time t
on
50
Fall time t
f
35



Switching time
Turn-off time t
off








150
ns
Total gate charge Q
g
33
Gate-source charge Q
gs
18
Gate-drain charge Q
gd

V
DD

400 V, V
GS
= 10 V, I
D
= 7.5 A
15
nC

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
7.5 A
Pulse drain reverse current (Note 1) I
DRP
30 A
Forward voltage (diode) V
DSF
I
DR
= 7.5 A, V
GS
= 0 V 1.7 V
Reverse recovery time t
rr
1200 ns
Reverse recovery charge Q
rr

I
DR
= 7.5 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/s 12 C

Marking


R
L
= 50
0 V
10 V
V
GS
V
DD

200 V
I
D
= 4 A V
OUT
50
Duty
<
=
1%, t
w
= 10 s
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3667 Part No. (or abbreviation code)
2SK3667
2006-11-08 3
10
6
4
0
8
2
0 4 8 12 16
VGS = 4V
4.5
5
4.75
5.25
6 10,8
20
5.5
16
12
8
4
0
20
0 20 50
4.5
4.75
5.25
10
5
40 30 10
8
6
VGS = 4 V
5.5
0
0 2 4 6 8 10
8
20
Tc = 55C
25
100
12
4
16
0
6
8
10
0
ID = 10 A
4 12 16 20
2.5
5
4
2
8
0.1
1
100
0.1 1 100
25
100
Tc = 55C 10
10
0.1
0.1 1 100
10
VGS = 10 V15V
10
1
DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

COMMON SOURCE
Tc = 25C
PULSE TEST

DRAIN CURRENT I
D
(A)

R
DS (ON)
I
D

D
R
A
I
N
-
S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(

)

COMMON SOURCE
Tc = 25C
PULSE TEST
DRAIN CURRENT I
D
(A)

Y
fs
I
D

COMMON SOURCE
VDS= 20 V
PULSE TEST
F
O
R
W
A
R
D

T
R
A
N
S
F
E
R

A
D
M
I
T
T
A
N
C
E

Y
f
s

(
S
)

DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

COMMON SOURCE
Tc = 25C
PULSE TEST
GATE-SOURCE VOLTAGE V
GS
(V)

I
D
V
GS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

COMMON SOURCE
VDS = 20 V
PULSE TEST

D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)


GATE-SOURCE VOLTAGE V
GS
(V)

V
DS
V
GS
COMMON SOURCE
Tc = 25
PULSE TEST
2SK3667
2006-11-08 4
1
0.1
10
100
1000
10000
1 10 100
Ciss
Coss
Crss
160 40 0 40 80 120 80
4
3
2
1
0
ID = 7.5A
2
4
0
1
2
3
5
80 40 0 40 80 120 160
4
0
0.1
0.2
1
10
100
0.6 0.8 1.2
VGS = 0, 1 V
10
5
1
3
0.4 1.0
0 10 30
VDD = 100 V
VDS
VGS
400
200
40 50
500
200
100
300
400
0
20
20
8
4
12
16
0
60
0
0 40 80 120 160
20
40
200


DRAIN-SOURCE VOLTAGE V
DS
(V)

CAPACITANCE V
DS


C
A
P
A
C
I
T
A
N
C
E


C


(
p
F
)

COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
D
R
A
I
N

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N



P
D


(
W
)

CASE TEMPERATURE Tc (C)

P
D
Tc


DRAIN-SOURCE VOLTAGE V
DS
(V)

I
DR
V
DS


D
R
A
I
N

R
E
V
E
R
S
E

C
U
R
R
E
N
T



I
D
R


(
A
)

COMMON SOURCE
Tc = 25C
PULSE TEST
G
A
T
E

T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E

V
t
h


(
V
)


CASE TEMPERATURE Tc (C)

V
th
Tc

COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
CASE TEMPERATURE Tc (C)

R
DS (ON)
Tc
D
R
A
I
N
-
S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(

)

COMMON SOURCE
VGS = 10 V
PULSE TEST

G
A
T
E
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
G
S


(
V
)

TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS

D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)

COMMON SOURCE
ID = 7.5 A
Tc = 25C
PULSE TEST
2SK3667
2006-11-08 5
400
300
200
100
0
25 50 75 100 125 150
0.01
0.1
1
10
0.001
10 100 1 10 100 1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 2.78C/W
0.2
0.1
0.02
0.01
0.05

CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)

E
AS
T
ch

A
V
A
L
A
N
C
H
E

E
N
E
R
G
Y

E
A
S


(
m
J
)


r
th
t
w

PULSE WIDTH t
w
(s)


N
O
R
M
A
L
I
Z
E
D

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E


r
t
h

(
t
)
/
R
t
h

(
c
h
-
c
)

Duty=0.5
SINGLE PULSE
15 V
15 V
TEST CIRCUIT WAVE FORM
I
AR

B
VDSS

V
DD
V
DS

R
G
= 25
V
DD
= 90 V, L = 5.88mH

=
V
DD
B
VDSS
B
VDSS 2
I L
2
1

AS


DRAIN-SOURCE VOLTAGE V
DS
(V)


SAFE OPERATING AREA
0.1
1
1
10
100
10 1000 100

0.01
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
DC OPERATION
Tc = 25C
100 s *
1 ms *
VDSS max

D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

2SK3667
2006-11-08 6

The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE