Electronic Devices 2011-2012 - Problems - Technology

Giovanni Ghione
January 21, 2012
1. A Si substrate with (100) orientation is covered by an oxide layer with thickness 0.2 jm. How long does
it take to grow at 1000

C in an atmosphere of dry oxygen an oxide layer having the same thickness on
top of the existing one? What would be the time required in the case of wet oxidation (water vapor)?
ANSWER We generally describe the oxide thickness vs. time through the equation:
t
ox
=

2
__
1 +
t +t
0

2
,41
1
_
.
where t
0
is some initial time formally associated to an initial thickness of the oxide and and 1 are
proper coecients depending on temperature. Let us nd those coecients for the two cases considered.
We have 1000,(T + 273) = 1000,1273 = 0.785 , thus from the graphs we obtain approximately:
1
dry
= 1 10
2
jm
2
,h
1
wet
= 5 10
1
jm
2
,h
1,
dry
= 5 10
2
jm,h
1,
wet
= 1 jm,h

dry
= 1
dry
, (1,
dry
) = 1 10
2
,
_
5 10
2
_
= 0.2 jm

wet
= 1
wet
, (1,
wet
) = 5 10
1
, (1) = 0.5 jm
From the basic equation we obtain:
t
2
ox
+t
ox
= 1(t +t
0
)
and in the two cases of dry and wet oxidation at t = 0:
t
2
ox
+t
ox
= 1t
0
!
t
0,wet
=
t
2
ox
+
wet
t
ox
1
wet
=
0.2
2
+ 0.5 0.2
5 10
1
= 0.28 h
t
0,dry
=
t
2
ox
+
dry
t
ox
1
dry
=
0.2
2
+ 0.2 0.2
1 10
2
= 8 h
We have now to nd the total time t + t
0
needed to grow a thickness of t
ox,tot
= 0.4 jm in the two
cases. We have:
t
wet
+t
0,wet
=
t
2
ox,tot
+
wet
t
ox,tot
1
wet
=
0.4
2
+ 0.5 0.4
5 10
1
= 0.72 h !t
wet
= 0.72 0.28 = 0.44 h
t
dry
+t
0,dry
=
t
2
ox,tot
+
dry
t
ox,tot
1
dry
=
0.4
2
+ 0.2 0.4
1 10
2
= 24 h !t
dry
= 24 8 = 16 h
1
Figure 1: Parabolic (1 ) and linear (,1) coecients for oxide growth on Silicon.
2. Consider an oxidation process done in such conditions that 1, = 6.22 jm/h and 1 = 1.5 jm
2
/h.
The oxidation is done on a substrate with a pre-existing oxide layer of thickness d
0
= 1 jm. Evaluate
the total oxide thickness grown in 10 h.
ANSWER We have = 1, (1,) = 1.5,6.22 = 0.2412 jm. Thus:
d
2
0
+d
0
= 1t
0
!t
0
=
d
2
0
+d
0
1
=
1
2
+ 0.2412 1
1.5
= 0.823 h
Then for a total oxidation time t = 10.823 h we have:
d
2
0
+d
0
= 1t !d
2
0
+ 0.2412d
0
= 1.5 10.823 !d
0
= 3. 91jm
3. Evaluate the time needed to grow an oxide thickness d = 0.5 jm on a Si substrate, knowing that the
oxidation process is characterized by 1, = 1.5 jm/h and 1 = 0.75 jm
2
/h.
ANSWER We have directly:
d
2
+d = 1t !t =
d
2
0
1
+
d
0
1,
=
0.5
2
0.75
+
0.5
1.5
= 0.666 h = 40 min
4. A rectangular trench is etched into a Si substrate, the trench width is | = 1 jm and the trench depth
is d = 3 jm. Suppose that on the Si surface a passivation layer is stopping oxidation. The substrate
is oxidized with 1, = 3 jm/h and 1 = 0.5 jm
2
/h, till the trench is completely lled. Find the nal
width of the oxide n and the time needed to ll the trench, t.
ANSWER We only consider growth on the trench sides. We know that the ratio of the Si thickness
and the nal oxide thickness is 0.44, in other words:
(n d) ,2
n,2
=
n d
n
= 0.44 !1
d
n
= 0.44 !
d
n
= 0.56 !n =
d
0.56
= 1. 786d = 1. 786 jm
2
Since the oxide growth is taking place on the two sides the nal thickness of the oxide is d,2, thus:
_
d
2
_
2
+
d
2
= 1t !t =
(d,2)
2
1
+
d,2
1,
=
(1.786,2)
2
0.5
+
1.786,2
3
= 1.8926 h
5. In a uniformely doped Si substrate with donor concentration
D
= 10
15
cm
3
we implant a Boron
dose o = 10
12
cm
2
at 100 keV. After this we perform a 2 h annealing at 1000

C. Find the depth of
the junction after annealing.
ANSWER We have to nd the boron projected range and vertical straggle at the given energy. We
use the two graphs:
Figure 2: Projected range vs. energy.
We nd 1
p
= 0.35 jm and 1
p
= 0.07 jm. Therefore the doping prole is:

A
(r) =
o
p
21
p
exp
_

(r 1
p
)
2
21
2
p
_
=
10
12
p
20.07 10
4
exp
_

(r 0.35 10
4
)
2
2 (0.07 10
4
)
2
_
After annealing we have:
1
0
p
=
_
1
2
p
+ 21t
a
From the gure we obtain a boron diusivity 1 = 2 10
14
cm
2
/s, thus:
1
0
p
=
_
(0.07 10
4
)
2
+ 2 2 10
14
2 3600 = 0.18 10
4
cm
with doping prole:

0
A
(r) =
o
p
21
0
p
exp
_

(r 1
p
)
2
21
02
p
_
=
10
12
p
20.18 10
4
exp
_

(r 0.35 10
4
)
2
2 (0.18 10
4
)
2
_
3
Figure 3: Straggle vs. energy.
In conclusion we have the two proles:

A
(r) = 5. 7 10
16
exp
_
1. 0 10
10
_
r 3. 5 10
5
_
2
_
cm
3

0
A
(r) = 2. 2 10
16
exp
_
1. 5 10
9
_
r 3. 5 10
5
_
2
_
cm
3
The resuling plots are shown in the gure. After annealing there is just one junction around r
j
=
0.8 10
4
cm = 0.8 jm.
6. We implant a dopant into Si with a projected range in SiO
2
1
p
= 300 nm and a straggle 1
p
= 70
nm. What is the minimum oxide thickness we need to mask the implant? Assume that masking is
eective when the dopant concentration at the Si surface is 10 orders of magnitude less than the peak
dopant concentration.
ANSWER The condition on the normalized prole is:
exp
_

(r 1
p
)
2
21
2
p
_
= exp
_

(r 300)
2
2 70
2
_
= 10
10
i.e.:

(r 300)
2
2 70
2
= log 10
10
= 23
(r 300)
2
= 2 70
2
23 !r = 775 nm
7. A silicon substrate is doped
D
= 5 10
15
cm
3
. We make a boron predeposition with a predeposed
dose o = 1 10
14
cm
2
; then, a diusion follows at 1100

C. What is the diusion time if we want a
junction at r
j
= 2 jm?
4
Figure 4: Dopant diusivity in Si vs. temperature.
ANSWER In generale the prole following from the predeposition has a erfc shape; however, we
approximate this with a delta function on the surface:I

A
(r, 0) = oc(r).
The prole after a constant dose diusion is a half-gaussian:

A
(r, t) =
o
p
1t
exp
_

r
2
41t
_
.
Assuming 1 = 2 10
13
cm
2
/s we have the equation:
o
p
1t
exp
_

r
2
j
41t
_
=
D
!
1 10
14
p
2 10
13
t
exp
_

_
2 10
4
_
2
4 2 10
13
t
_
= 5 10
15
!
1. 261 6 10
20
p
t
exp
_

50000
t
_
= 5 10
15
The solution for t can be done numerically or by trial and error, the result is t 1.89 h.
8. A jtype Si substrate has a resistivity j = 2 cm. Find the substrate doping assuming for the hole
mobility j
h
= 500 cm
2
/Vs.
ANSWER From the substrate conductivity:
o = j
h

A
!j =
1
j
h

A
!

A
=
1
j
h
j
=
1
1.6 10
19
500 2
= 6. 25 10
15
cm
3
.
5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
x 10
-4
10
14
10
15
10
16
10
17
Depth, cm
D
o
p
i
n
g
,

c
m
-
3
Figure 5: Doping prole before and after annealing.
9. A Si substrate is undergoing wet oxidation (orientation 111) for 5 h, at 1050

C. Evaluate the thickness
of the oxide layer from the graphs directly yielding the oxide thickness and compare with the analytical
expression with the and 1 coecients.
ANSWER From the graph:we obtain t
ox
2 jm. Considering the graphs with the parabolic and
linear coecients we obtain:
1, 4 jm/h
1 0.8 jm
2
/h
=
1
1,
=
0.8
4
= 0.2 jm
i.e.:
t
ox
=

2
__
1 +
t

2
,41
1
_
=
0.2
2
__
1 +
5
0.2
2
, (4 0.8)
1
_
= 1.9 jm
roughly consistent with the other result.
6
Figure 6: Oxide thickness vs. time.
Figure 7: Parabolic (1 ) and linear (,1) coecients for oxide growth on Silicon.
7