2SK3566

2005-01-24 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV)
2SK3566

Switching Regulator Applications


Low drain-source ON resistance: RDS (ON) = 5.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 720 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
900 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
900 V
Gate-source voltage V
GSS
30 V
DC (Note 1) I
D
2.5
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
7.5
A
Drain power dissipation (Tc = 25C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
216 mJ
Avalanche current I
AR
2.5 A
Repetitive avalanche energy (Note 3) E
AR
4 mJ
Channel temperature T
ch
150 C
Storage temperature range T
stg -55~150 C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
3.125 C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C, L = 63.4 mH, I
AR
= 2.5 A, R
G
= 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.


Unit: mm

1: Gate
2: Drain
3: Source


JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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2SK3566
2005-01-24 2
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= 25 V, V
DS
= 0 V 10 A
Gate-source breakdown voltage V
(BR) GSS
I
G
= 10 A, V
GS
= 0 V 30 V
Drain cut-off current I
DSS
V
DS
= 720 V, V
GS
= 0 V 100 A
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 900 V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 4.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 1.5 A 5.6 6.4
Forward transfer admittance Y
fs
V
DS
= 20 V, I
D
= 1.5 A 1.0 2.0 S
Input capacitance C
iss
470
Reverse transfer capacitance C
rss
10
Output capacitance C
oss

V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
50
pF
Rise time t
r
20
Turn-on time t
on
60
Fall time t
f
30
Switching time
Turn-off time t
off








100
ns
Total gate charge Q
g
12
Gate-source charge Q
gs
7
Gate-drain charge Q
gd

V
DD

400 V, V
GS
= 10 V, I
D
=2.5 A
5
nC

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
2.5 A
Pulse drain reverse current (Note 1) I
DRP
7.5 A
Forward voltage (diode) V
DSF
I
DR
=2.5 A, V
GS
= 0 V 1.7 V
Reverse recovery time t
rr
720 ns
Reverse recovery charge Q
rr

I
DR
= 2.5 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/s 3.6 C

Marking


R
L
=
133
0 V
10 V
V
GS
V
DD

200 V
I
D
= 1.5 A V
OUT
50
Duty
<
=
1%, t
w
= 10 s
Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3566 Part No. (or abbreviation code)
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2SK3566
2005-01-24 3

D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)

DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS

DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


GATE-SOURCE VOLTAGE V
GS
(V)

I
D
V
GS

GATE-SOURCE VOLTAGE V
GS
(V)

V
DS
V
GS

DRAIN CURRENT I
D
(A)

Y
fs
I
D

DRAIN CURRENT I
D
(A)

R
DS (ON)
I
D

D
R
A
I
N
-
S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(

)

2.5
2
1.5
1
0.5
0
3
0 12 24 36
VGS = 4 V
4.75
5
5.25
8
10
5.5
6
4. 5
COMMON
SOURCE
Tc = 25C
PULSE TEST
F
O
R
W
A
R
D

T
R
A
N
S
F
E
R

A
D
M
I
T
T
A
N
C
E

Y
f
s

(
S
)


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


2
1.6
0.8
0.4
0
0 4 8 12 16 20
VGS = 4 V
4.75
5
5.25 5.5
6
8
10
24
1.2
4. 5
COMMON
SOURCE
Tc = 25C
PULSE TEST

0
0 2 4 8 10 12
1
5
Tc = 55C
25
100
2
3
4
6
COMMON SOURCE
VDS = 20 V
PULSE TEST

0
20
30
40
0
ID = 2.5 A
4 8 12 16 20
0.8
1.5
10
COMMON SOURCE
Tc = 25
PULSE TEST

1
0.01
1
10
0.01 1 10
25
100
Tc = 55C
0.1
0.1
COMMON SOURCE
VDS= 20 V
PULSE TEST

1
0.01 0.1 1 10
10
100
VGS = 10 V
COMMON SOURCE
Tc = 25C
PULSE TEST
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2SK3566
2005-01-24 4
0
100
200
300
400
500
0
4
8
12
16
20
0 5 10
VDD = 100 V
VDS
VGS
400
200
15 20

0
1
2
3
5
80 40 0 40 80 120 160
4
D
R
A
I
N

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N



P
D


(
W
)

G
A
T
E

T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E

V
t
h


(
V
)



CASE TEMPERATURE Tc (C)

R
DS (ON)
Tc
D
R
A
I
N
-
S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(

)


DRAIN-SOURCE VOLTAGE V
DS
(V)

I
DR
V
DS


D
R
A
I
N

R
E
V
E
R
S
E

C
U
R
R
E
N
T


I
D
R


(
A
)


DRAIN-SOURCE VOLTAGE V
DS
(V)

CAPACITANCE V
DS


C
A
P
A
C
I
T
A
N
C
E


C


(
p
F
)


CASE TEMPERATURE Tc (C)

V
th
Tc


50
20
0
0 40 80 120 160
10
30
40
200

CASE TEMPERATURE Tc (C)

P
D
Tc
G
A
T
E
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
G
S


(
V
)

TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS

D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)

COMMON SOURCE
ID = 2.5 A
Tc = 25C
PULSE TEST

1
0.1
10
100
1000
1 10 100
Ciss
Coss
Crss
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C

160 40 0 40 80 120 80
20
16
12
8
4
0
ID = 1.5A
0.8 VGS = 10 V
COMMON SOURCE
PULSE TEST

0
0.1
0.4
0.3
0.5
1
3
5
10
0.8 1.2 1.6
VGS = 0V
10
3
1
COMMON SOURCE
Tc = 25C
PULSE TEST
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
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2SK3566
2005-01-24 5
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)

250
200
150
100
50
0
25 50 75 100 125 150



DRAIN-SOURCE VOLTAGE V
DS
(V)

SAFE OPERATING AREA

E
AS
T
ch

A
V
A
L
A
N
C
H
E

E
N
E
R
G
Y

E
A
S


(
m
J
)


r
th
t
w

PULSE WIDTH t
w
(s)


N
O
R
M
A
L
I
Z
E
D

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E


r
t
h

(
t
)
/
R
t
h

(
c
h
-
c
)

15 V
15 V
TEST CIRCUIT WAVE FORM
I
AR

B
VDSS

V
DD
V
DS

R
G
= 25
V
DD
= 90 V, L = 43.4mH

=
V
DD
B
VDSS
B
VDSS 2
I L
2
1

AS

D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

0.01
10
0.1
1
10
100 1 10 100 1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 1.25C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
T
PDM
t
Duty = t/T
Rth (ch-c) = 3.125C/W
SINGLE PULSE
0.01
0.1
1
10
100

1 10 1000 100 10000
SINGLE NONREPETITIVE PULSE Tc=25
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
DC OPERATION
Tc = 25C
100 s *
1 ms *
VDSS max
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2SK3566
2005-01-24 6



The information contained herein is subject to change without notice.
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responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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