1

2

M
a
t
e
r
i
a
l
s

p
r
o
p
e
r
t
i
e
s

S
u
b
s
t
r
a
t
e

F
u
r
n
i
s
h
e
r

d
a
t
a


O
r
i
e
n
t
a
t
i
o
n


D
o
p
i
n
g

s
p
e
c
i
e
s

T
h
i
c
k
n
e
s
s

R
e
s
i
s
t
i
v
i
t
y




D
o
p
i
n
g








e

=

=

N
a

=

M
e
a
s
u
r
e
d

d
a
t
a


S
h
e
e
t

r
e
s
i
s
t
a
n
c
e

R
e
s
i
s
t
i
v
i
t
y




D
o
p
i
n
g







R

=

N
a

=

F
i
e
l
d

o
x
i
d
e

E
l
l
i
p
s
o
m
e
t
r
y

t
h
i
c
k
n
e
s
s


t
e
l
l
i
p
s
o
(
S
i
O
2
)
=

P
r
o
f
i
l
l
o
m
e
t
r
y

t
h
i
c
k
n
e
s
s


t
p
r
o
f
i
l
o
(
S
i
O
2
)
=

P
N

j
u
n
c
t
i
o
n

D
o
p
i
n
g

s
p
e
c
i
e
s

S
h
e
e
t

r
e
s
i
s
t
a
n
c
e




R

=

A
n
t
i
r
e
f
l
e
c
t
i
o
n

c
o
a
t
i
n
g

M
a
t
e
r
i
a
l

E
l
l
i
p
s
o
m
e
t
r
y

t
h
i
c
k
n
e
s
s


e
e
l
l
i
p
s
o
=

R
e
f
r
a
c
t
i
v

i
n
d
e
x



n
=

A
l
u
m
i
n
i
u
m

F
r
o
n
t

s
i
d
e

B
a
c
k

s
i
d
e

A
n
n
e
a
l
i
n
g

?

T
h
i
c
k
n
e
s
s

S
h
e
e
t

r
e
s
i
s
t
a
n
c
e

R
e
s
i
s
t
i
v
i
t
y




e
(
A
l
)
=

R

=

A
n
n
e
a
l
i
n
g

?

T
h
i
c
k
n
e
s
s

S
h
e
e
t

r
e
s
i
s
t
a
n
c
e

R
e
s
i
s
t
i
v
i
t
y




e
(
A
l
)
=

R

=

3
Process

Field oxyde (sub-contracted)

- Fabrication technique






Photolithoetching

- Experimental data

Photoresist Exposure duration
Spinning rate Developer duration
T(softbake)
Duration
T(hardbake)
Duration



o Await resist thickness



o Softbake role




o Hardbake role





- Oxyde etching
o Experimental data





o Explain how the end of etching is checked





- Resist removing (method)



Etching bath
Temperature
Duration
4
Chemical cleaning
- Steps













- Role of each step.
What about substrate surface after each step, hydrophilic or hydrophobic? Explain












PN junction realisation
- Doping technique used? Give another doping technique?
Give the reaction involved







- Experimental data (Doping species, temperature, duration)






- Why is it necessary to deep the wafers in HF for about 115 after doping step?







5
Metal back contact deposition
- Material? Thickness desired, justify?




- Deposition technique








- Experimental data

Target Working pressure
Gaz Power
Plasma color Duration

- Role of annealing





- Annealing experimental data

Annealing method Temperature
Duration
Atmosphere


Antireflection coating
- Material? Thickness desired, justify?






- Deposition technique






- Experimental data

Reactive gazes Working pressure
Temperature Duration
6
Photolithoetching
- Experimental data

Photoresist Flood exposure duration
Spinning rate Developer duration
T(soft bake)
Duration
Backside resist
Role

Exposure duration
T(inversion bake)
Duration
T(hard bake)
Duration


o Inversion bake role





- SiN
x
etching
o Experimental data





- Why is not removed the resist?






Metal front contact deposition
- Material? Thickness desired, justify?



- Deposition technique



- Experimental data

Target Working pressure
Gaz Power
Plasma color Duration



- Lift off
o Experimental data


Etching bath
Temperature
Duration
Etching bath
Temperature
Duration
7
Measurements

Ellipsometry

- Technique description





- Field oxide thickness
At least 5 different measure points. Average calculation and standard deviation.






- Antireflective coating thickness







Profilometry

- Technique description







- Field oxide thickness
Compare to the previous result





- Front aluminium thickness. Deduce the deposition rate






8
Resistivity measurements 4 point probe
- Technique description





- Substrate
Measurement table, graph, sheet resistance, resistivity, doping












- PN junction
Measurement table, graph, sheet resistance












Resistivity measurements inductive method
- Technique description






- Back side aluminium
Sheet resistance, resistivity; explain why the substrate can be neglected




- Front side aluminium
Sheet resistance, resistivity; explain why the substrate can be neglected