Tutorial sheet 1: EPL213

1. Assume a nonparabolic band structure described by E(k)[1+E(k)] =

2
k
2
/2m*(0). For
this band structure, deduce the velocity v(k) as a function of k.
2. Calculate the number of states per unit energy in a 100 by 100 by 10 nm piece of
silicon (m
*
= 1.08 m0) 100 meV above the conduction band edge. Write the result in
units of eV
-1
.
3. Calculate the band gap and lattice constant for Si1-xGex alloy semiconductors with
x = 0.2 and 0.4, respectively. When a thin silicon layer (below critical thickness) is
grown epitaxially onto these SiGe semiconductors, what will be the nature of strain in
the silicon layers?
4. 4H-SiC is doped with 210
17
cm
-3
nitrogen donor atoms (Ec Ed = 90 meV). Use NC =
410
20
cm
-3
. (a) Calculate the electron density at 300 K. (b) Calculate the hole density
at 300 K after adding 210
18
cm
-3
aluminum acceptor atoms (Ea Ec = 220 meV).
Use NV = 1.610
20
cm
-3

5. (a) A silicon sample is in the shape of a rectangular bar with a cross-sectional area of
100 m
2
, a length of 0.1 cm, and is doped with 510
16
cm
3
arsenic atoms. The
temperature is T = 300 K. Determine the current if 5 V is applied across the length.
(b) Repeat part (a) if the length is reduced to 0.01 cm. (c) Calculate the average drift
velocity of electrons in parts (a) and (b).
6. A piece of germanium doped with 10
16
cm
-3
shallow donors is illuminated with light
generating 10
15
cm
-3
excess electrons and holes. Calculate the quasi-Fermi energies
relative to the intrinsic energy and compare it to the Fermi energy in the absence of
illumination.
7. Calculate the electron and hole densities in an n-type silicon wafer (Nd = 10
17
cm
-3
)
illuminated uniformly with 10 mW/cm
2
of red light (Eph = 1.8 eV). The absorption
coefficient of red light in silicon is 10
-3
cm
-1
. The minority carrier lifetime is 10 s.
8. A 1cm long piece of undoped silicon with a lifetime of 1ms is illuminated with light,
generating Gopt = 2x10
19
cm
-2
s
-1
electron-hole pairs in the middle of the silicon.
This bar silicon has ideal ohmic contacts on both sides.
Find the excess electron density throughout the material using the simple
recombination model and assuming that n = p = 1000 cm
2
/V-s. Also find the
resulting electron current density throughout the material.