Lecture15

OUTLINE
MOSFETstructure&operation(qualitative)
Reviewofelectrostatics
The(N)MOScapacitor
El t t ti Electrostatics
Chargevs.voltagecharacteristic
Reading:Chapter6.16.2.1
EE105Fall2007 Lecture15,Slide1 Prof.Liu,UCBerkeley
TheMOSFET
Metal-Oxide-Semiconductor
Field-Effect Transistor:
GATE LENGTH, L
g
OXIDE THICKNESS, T
ox
Gate
Source Drain
Field-Effect Transistor:
Substrate
J UNCTION DEPTH, X
j
M. Bohr, Intel Developer
Forum, September 2004
Currentflowingthroughthechannelbetweenthe
source anddrain iscontrolledbythegate voltage.
N-channel & P-channel MOSFETs
operate in a complementary manner
CMOS C l t MOS
C
U
R
R
E
N
T
V
TH
EE105Fall2007 Lecture15,Slide2 Prof.Liu,UCBerkeley
CMOS = Complementary MOS
|GATE VOLTAGE|
NChannelMOSFETStructure
Circuit symbol
Theconventionalgatematerialisheavilydopedpolycrystalline
silicon(referredtoaspolysiliconorpolySiorpoly)
Note that the gate is usually doped the same type as the source/drain Notethatthegateisusuallydopedthesametypeasthesource/drain,
i.e.thegateandthesubstrateareofoppositetypes.
TheconventionalgateinsulatormaterialisSiO
2
.
To minimize current flow between the substrate (or body)
EE105Fall2007 Lecture15,Slide3 Prof.Liu,UCBerkeley
Tominimizecurrentflowbetweenthesubstrate(or body )
andthesource/drainregions,theptypesubstrateisgrounded.
Review:ChargeinaSemiconductor
Negativecharges:
Conductionelectrons(density=n)
Ionizedacceptoratoms(density=N
A
)
Positivecharges:
Holes(density=p) ( y p)
Ionizeddonoratoms(density=N
D
)
Thenetchargedensity[C/cm
3
]inasemiconductoris
Note that p n N and N each can vary with position
( )
A D
N N n p q + =
Notethatp,n,N
D
,andN
A
eachcanvarywithposition.
Themobilecarrierconcentrations(n andp)inthechannelof
aMOSFETcanbemodulatedbyanelectricfieldviaV
G
.
EE105Fall2007 Lecture15,Slide4 Prof.Liu,UCBerkeley
ChannelFormation(Qualitative)
Asthegatevoltage(V
G
)isincreased,holes
are repelled away from the substrate surface
V
G
< V
TH
arerepelledawayfromthesubstratesurface.
Thesurfaceisdepletedofmobilecarriers.The
chargedensitywithinthedepletionregionis
determinedbythedopantiondensity. y p y
AsV
G
increasesabovethethresholdvoltage
V a layer of conduction electrons forms at
V
G
V
TH
V
TH
, alayerofconductionelectronsformsat
thesubstratesurface.
ForV
G
>V
TH
,n >N
A
atthesurface.
Th f i i i t d t b t Thesurfaceregionisinvertedtobentype.
The electron inversion layer serves as a resistive path (channel) for current to
flow between the heavily doped (i e highly conductive) source and drain regions
EE105Fall2007 Lecture15,Slide5 Prof.Liu,UCBerkeley
flow between the heavily doped (i.e. highly conductive) source and drain regions.
VoltageDependentResistor
IntheONstate,theMOSFETchannelcanbeviewedasaresistor.
Sincethemobilechargedensitywithinthechanneldependson
thegatevoltage,thechannelresistanceisvoltagedependent.
EE105Fall2007 Lecture15,Slide6 Prof.Liu,UCBerkeley
ChannelLength&WidthDependence
Shorterchannellengthandwiderchannelwidtheachyield
lowerchannelresistance,hencelargerdraincurrent.
IncreasingW alsoincreasesthegatecapacitance,however,which
limitscircuitoperatingspeed(frequency).
EE105Fall2007 Lecture15,Slide7 Prof.Liu,UCBerkeley
Comparison:BJTvs. MOSFET
InaBJT,current(I
C
)islimitedbydiffusion ofcarriersfromthe
emittertothecollector.
I
C
increasesexponentiallywithinputvoltage(V
BE
),becausethe
carrierconcentrationgradientinthebaseisproportionalto
T BE
V V
e
/
In a MOSFET current (I ) is limited by drift of carriers from the InaMOSFET,current(I
D
)islimitedbydrift ofcarriersfromthe
sourcetothedrain.
I
D
increases~linearlywithinputvoltage(V
G
),becausethecarrier
concentrationinthechannelisproportionalto(V
G
V
TH
)
In order to understand how MOSFET design parameters affect MOSFET
EE105Fall2007 Lecture15,Slide8 Prof.Liu,UCBerkeley
InordertounderstandhowMOSFETdesignparametersaffectMOSFET
performance,wefirstneedtounderstandhowaMOScapacitorworks...
MOSCapacitor
Ametaloxidesemiconductorstructurecanbeconsideredasa
parallelplatecapacitor,withthetopplatebeingthepositive
plate,thegateinsulatorbeingthedielectric,andtheptype
semiconductorsubstratebeingthenegativeplate.
The negative charges in the semiconductor (for V
G
> 0) are Thenegativechargesinthesemiconductor(forV
G
>0)are
comprisedofconductionelectronsand/oracceptorions.
I d t d t d h th t ti l d h di t ib ti
EE105Fall2007 Lecture15,Slide9 Prof.Liu,UCBerkeley
Inordertounderstandhowthepotentialandchargedistributions
withintheSidependonV
G
,weneedtobefamiliarwithelectrostatics...
GaussLaw

= E
is the net charge density
is the dielectric permittivity
Ifthemagnitudeofelectricfieldchanges,theremustbecharge!
Inachargefreeregion,theelectricfieldmustbeconstant.

GaussLawequivalentlysaysthatifthereisanet electricfield
leaving a region there must be positive charge in that region: leavingaregion,theremustbepositivechargeinthatregion:

=
V V
dV dV E

Q
dV

d d

=
Q
dS E

=
V
Q
dV

=
S V
dS E dV E
The integral of the electric field over a
closed surface is proportional to the
h ithi th l d l
EE105Fall2007 Lecture15,Slide10 Prof.Liu,UCBerkeley

charge within the enclosed volume
GaussLawin1D

= =
dx
dE
E
dx
dx dE

'
) ' (
) ( ) (
0
0
dx
x
x E x E
x
x

+ =

Considerapulsechargedistribution:
0
x
) (x E ) (x E
x
0
) (x
x
d
X
0
X
EE105Fall2007 Lecture15,Slide11 Prof.Liu,UCBerkeley
0
A
qN
d
X
ElectrostaticPotential
Theelectricfield(force)isrelatedtothepotential(energy):
) ( ) (
2
x x V d dV
Note that an electron (q charge) drifts in the direction of increasing

) ( ) (

2
x
dx
x V d
dx
dV
E = =
Notethatanelectron( qcharge)driftsinthedirectionofincreasing
potential:
dx
dV
q qE F
e
= =
) (x V
) (x E
) (x
x
d
X
) (
x
0
0
) (
x
0
X
X
EE105Fall2007 Lecture15,Slide12 Prof.Liu,UCBerkeley
A
qN
0
0
d
X
d
X
BoundaryConditions
Electrostaticpotentialmustbeacontinuousfunction.
Otherwise,theelectricfield(force)wouldbeinfinite.
Electricfielddoesnothavetobecontinuous,however.
Consideraninterfacebetweentwomaterials:
) (
1 1
E

= + =
inside
Q S E S E dS E
2 2 1 1

x
th 0 If Q
) (
2 2
E
then , 0 If
0

x
inside
Q
0
2 2 1 1
= + S E S E
S
1
2
2
1

=
E
E
EE105Fall2007 Lecture15,Slide13 Prof.Liu,UCBerkeley
DiscontinuityinelectricdisplacementE chargedensityatinterface!
MOSCapacitorElectrostatics
Gateelectrode:
SinceE(x)=0inametallicmaterial,V(x)isconstant. ( ) , ( )
Gateelectrode/gateinsulatorinterface:
Thegatechargeislocatedatthisinterface.
E( ) h t l i id th t i l t E(x)changestoanonzerovalueinsidethegateinsulator.
Gateinsulator:
Ideally,therearenochargeswithinthegateinsulator. y, g g
E(x)isconstant,andV(x)islinear.
Gateinsulator/semiconductorinterface:
Si th di l t i itti it f SiO i l th th t f SincethedielectricpermittivityofSiO
2
islowerthanthatof
Si,E(x)islargerinthegateinsulatorthanintheSi.
Semiconductor:
EE105Fall2007 Lecture15,Slide14 Prof.Liu,UCBerkeley
If(x)isconstant(nonzero),thenV(x)isquadratic.
MOSCapacitor:V
GB
=0
Ifthegateandsubstratematerialsarenotthesame(typicallythe
case),thereisabuiltinpotential(~1Vacrossthegateinsulator). ), p ( g )
Positivechargeislocatedatthegateinterface,andnegativechargeintheSi.
Thesubstratesurfaceregionisdepletedofholes,downtoadepthX
do
) ( ) (x
x
X
do
) (x V
0
V
S o
x
Q
dep
S,o
EE105Fall2007 Lecture15,Slide15 Prof.Liu,UCBerkeley
x
-t
ox
X
do
0
FlatbandVoltage,V
FB
Thebuiltinpotentialcanbecancelledoutbyapplyingagate
voltagethatisequalinmagnitude(butoftheoppositepolarity)
asthebuiltinpotential.Thisgatevoltageiscalledtheflatband
voltagebecausetheresultingpotentialprofileisflat.
) (x ) (x
x
-t
) (x V
t
ox
0
x
There is no net charge (i.e. (x)=0) in
the semiconductor under for V = V
EE105Fall2007 Lecture15,Slide16 Prof.Liu,UCBerkeley
-t
ox
0
the semiconductor under for V
GB
= V
FB
.
VoltageDropsacrossaMOSCapacitor
S ox FB GB
V V V V + =
) (x V
x
-t
X
0
Ifweknowthetotalchargewithinthesemiconductor(Q
S
),
( )
t
ox
X
d
0
wecanfindtheelectricfieldwithinthegateinsulator(E
ox
)
andhencethevoltagedropacrossthegateinsulator(V
ox
):
S
Q

S S
Q Q
E V

whereQ
S
isthearealchargedensityinthesemiconductor[C/cm
2
]
ox
S
ox
Q
A E dS E

= =

ox
S
ox
ox
S
ox ox ox
C
Q
t
A
Q
t E V =

= =

EE105Fall2007 Lecture15,Slide17 Prof.Liu,UCBerkeley

andisthearealgatecapacitance[F/cm
2
]
ox ox ox
t C
V
GB
<V
FB
(Accumulation)
IfagatevoltagemorenegativethanV
FB
isapplied,thenholes
will accumulate at the gateinsulator/semiconductor interface willaccumulateatthegate insulator/semiconductorinterface.
) (x
t
x
-t
ox
0
) (x V
-t
ox
Areal gate charge density [C/cm
2
]:
x
0
( )
FB GB ox G
V V C Q =
Areal gate charge density [C/cm ]:
EE105Fall2007 Lecture15,Slide18 Prof.Liu,UCBerkeley
V
FB
<V
GB
<V
TH
(Depletion)
IftheappliedgatevoltageisgreaterthanV
FB
,thenthe
semiconductorsurfacewillbedepletedofholes. p
IftheappliedgatevoltageislessthanV
TH
,theconcentrationof
conductionelectronsatthesurfaceissmallerthanN
A
(x) qN
A
(x)
) ( ) (x
x
t
X
d
) (x V
-t
ox
0
2
d d
X qN Q =
Areal depletion
charge density [C/cm
2
]:
x
( )

+ = + =
2
2
2
2
Si
d A
ox
d A
S ox FB GB
V V C
X qN
C
X qN
V V V V

d A dep
X qN Q =
EE105Fall2007 Lecture15,Slide19 Prof.Liu,UCBerkeley
x
-t
ox
X
d
0
( )

+ = 1
2
1
A Si
FB GB ox
ox
Si
d
N q
V V C
C
X

V
GB
>V
TH
(Inversion)
IftheappliedgatevoltageisgreaterthanV
TH
,thenn >N
A
at
thesemiconductorsurface.

N
AtV
GB
=V
TH
,thetotalpotentialdroppedintheSiis2
B
where
) (x

=
i
A
T B
n
N
V ln
) (x
X
) (x V
x
-t
ox
X
d,max
) 2 ( 2
2
B A Si
B FB TH
N q
V V

+ + =
EE105Fall2007 Lecture15,Slide20 Prof.Liu,UCBerkeley
x
-t
ox
X
d,max
0
2
ox
B FB TH
C
V V + +
MaximumDepletionDepth,X
d,max ,
AsV
GB
isincreasedaboveV
TH
,V
S
andhencethedepthofthe
depletionregion(X
d
)increasesveryslowly. p g (
d
) y y
Thisisbecausen increasesexponentiallywithV
S
,whereasX
d
increaseswiththesquarerootofV
S
.Thus,mostofthe
incremental negative charge in the semiconductor comes from incrementalnegativechargeinthesemiconductorcomesfrom
additionalconductionelectronsratherthanadditionalionized
acceptoratoms,whenn exceedsN
A
.
b bl d h X
d
canbereasonablyapproximatedtoreachamaximum
value(X
d,max
)forV
GB
V
TH
.
Q
dep
thus reaches a maximum of Q
dep max
at V
GB
= V
TH
. Q
dep
thusreachesamaximumofQ
dep,max
atV
GB
V
TH
.
Ifweassumethatonlytheinversionlayerchargeincreases
withincreasingV
GB
aboveV
TH
,then
EE105Fall2007 Lecture15,Slide21 Prof.Liu,UCBerkeley
( ) ( )
max ,
) ( so and
dep TH GB ox GB G TH GB ox inv
Q V V C V Q V V C Q + = =
QV CurveforMOSCapacitor
G
Q
B Si
d
qN
X
) 2 ( 2
max ,

=
( ) V V C Q
G
Q
A
qN
( )
TH GB ox inv
V V C Q =
max , dep
Q
[ ] V V
TH
V
FB
V
[ ] V V
GB
) 2 ( 2
max , max , B Si A d A dep
qN X qN Q = =
EE105Fall2007 Lecture15,Slide22 Prof.Liu,UCBerkeley
p
Example
EE105Fall2007 Lecture15,Slide23 Prof.Liu,UCBerkeley