DERIVATION OF MOSFET I

DS
VS. V
DS
+ V
GS
Derive the current expressions in the MOSFET:
Linear Region: I
D
= C
ox
W
L
[(V
GS
V
TH
)V
DS

V
2
DS
2
]
Saturation Region: I
D
= C
ox
W
2L
(V
GS
V
TH
)
2
1. Linear Region
Figure 1. Concentration Contours in Linear Region. A uniform nar-
row channel exists.
KVL:
V
G
V
S
= V
G
V
C
+ V
C
V
S
V
G
V
S
= V
GS
V
G
V
C
= V
GC
V
C
V
S
= V (x)
V
GS
= V
GC
+ V (x) or V
GS
V (x) = V
GC
1
2 DERIVATION OF MOSFET IDS VS. VDS + VGS
Total charge density at x on capacitor(C
OX
) is Q
T
(x):
Q
T
(x) = V
GC
C
OX
= (V
GS
V (x))C
OX
Q
T
(x) = Q(x)
mobile
+ Q(x)
depletion
Q(x)
mobile
=mobile electron charge in channel at x
Q(x)
mobile
= [V
GS
V (x) V
TH
]C
OX
Use mobile charge to get current:
J
n
= qnE + qD
n
dn
dx
= qnE (no diusion current in the channel)
qn(x) = Q(x)
mobile
= Q
m
(x)
J
n
= Q
m
(x)E , but E =
dV
dx
J
n
= Q
m
(x)
dV
dx
, substitute for Q
m
(x)
J
n
= C
ox
(V
GS
V (x)V
TH
)
dV
dx
, separate variables and neglect (-) sign. Consider
only the magnitude.
J
n
dx = C
ox
[(V
GS
V
TH
) V (x)]dV
Due to continuity, Jn = constant (no hole current or no generation, recombina-
tion). Integrating from source to drain or from x=0 to x=L, where L=gate length:
J
n

L
0
dx = C
ox

V (L)
V (0)
[(V
GS
V
TH
) V (x)]dV
V(L) = VDS , V(0)=0
J
n

L
0
dx = C
ox

V
DS
0
[(V
GS
V
TH
) V (x)]dV
J
n
L = C
ox
[(V
GS
V
TH
)V
V
2
2
]
V
DS
0
J
n
=
Cox
L
[(V
GS
V
TH
)V
DS

V
2
DS
2
]
DERIVATION OF MOSFET IDS VS. VDS + VGS 3
I
D
= J
n
W (W=Device Width)
J
n
for channel is Amp/cm since Q
m
= Charge/cm
2
I
D
for Linear Region: I
D
= C
ox
W
L
[(V
GS
V
TH
)V
DS

V
2
DS
2
]
2. Saturation Region
When V
DS
(V
GS
V
TH
) channel pinches o. This means that the channel
current near the drain spreads out and the channel near drain can be approximated
as the depletion region. After this occurs, at V
DS
= (V
GS
V
TH
), if you make V
DS
larger, the current I
D
does not change (to zero approximation). This is because
any additional V
DS
you add will get dropped across the depletion region and wont
change the current I
D
.
So for V
DS
(V
GS
V
TH
) we nd I
D
by setting V
DS
= (V
GS
V
TH
) substituting
into the linear equation.
I
D
= C
ox
W
L
[(V
GS
V
TH
)(V
GS
V
TH
)
(V
GS
V
TH
)
2
2
]
I
D
for Saturation Region:
I
D
= C
ox
W
2L
(V
GS
V
TH
)
2
4 DERIVATION OF MOSFET IDS VS. VDS + VGS
n=10^17 n=10^15
source drain
Figure 2. Concentration Contours in Linear Region. A uniform nar-
row channel exists.
n=10^17 n=10^15
source drain
Figure 3. Concentration Contours in Saturation Region. Channel
narrow near source and spreads out and widens near drain, said to be
pinched o.