By Vikash sharma at abc claases

Chapter 14 - Semiconductor Electronics Materials Devices And Simple Circuits

Class !! "hysics
Question 14.1:
!n an n-type silicon# $hich o% the %ollo$in& statement is true'
(a) Electrons are ma*ority carriers and trivalent atoms are the dopants+
(b)Electrons are minority carriers and pentavalent atoms are the dopants+
(c) ,oles are minority carriers and pentavalent atoms are the dopants+
(d),oles are ma*ority carriers and trivalent atoms are the dopants+ Ans$er
-he correct statement is (c).
!n an n-type silicon# the electrons are the ma*ority carriers# $hile the holes are the minority carriers+ An
n-type semiconductor is obtained $hen pentavalent atoms# such as phosphorus# are doped in silicon
atoms+
Question 14.2:
.hich o% the statements &iven in E/ercise 14+1 is true %or p-type semiconductors+ Ans$er
-he correct statement is (d).
!n a p-type semiconductor# the holes are the ma*ority carriers# $hile the electrons are the minority
carriers+ A p-type semiconductor is obtained $hen trivalent atoms# such as aluminium# are doped in
silicon atoms+
Question 14.3:
Carbon# silicon and &ermanium have %our valence electrons each+ -hese are characterised by valence
and conduction bands separated by ener&y band &ap respectively e0ual to (E&)C# (E&)Si and (E&)1e+ .hich
o% the %ollo$in& statements is true2
(a) (E&)Si 3 (E&)1e 3 (E&)C
(b)(E&)C 3 (E&)1e 4 (E&)Si
(C) (E&)C 4 (E&)Si 4 (E&)1e (d)
(E&)C 5 (E&)Si 5 (E&)1e
Ans$er
-he correct statement is (c).
Page 1 of 16
6% the three &iven elements# the ener&y band &ap o% carbon is the ma/imum and that o% &ermanium is
the least+
-he ener&y band &ap o% these elements are related as' (E&)C 4 (E&)Si 4 (E&)1e Question 14.4:
!n an unbiased p-n *unction# holes di%%use %rom the p-re&ion to n-re&ion because
(a) %ree electrons in the n-re&ion attract them+
(b)they move across the *unction by the potential di%%erence+
(c) hole concentration in p-re&ion is more as compared to n-re&ion+
(d)All the above+
Ans$er
-he correct statement is (c).
-he di%%usion o% char&e carriers across a *unction takes place %rom the re&ion o% hi&her concentration to
the re&ion o% lo$er concentration+ !n this case# the p-re&ion has &reater concentration o% holes than the
n-re&ion+ ,ence# in an unbiased p-n *unction# holes di%%use %rom the p-re&ion to the n-re&ion+
By Vikash sharma at abc claases
By Vikash sharma at abc claases
Question 14.5:
.hen a %or$ard bias is applied to a p-n *unction# it
(a) raises the potential barrier+
(b)reduces the ma*ority carrier current to 7ero+
(c) lo$ers the potential barrier+
(d)8one o% the above+
Ans$er
-he correct statement is (c).
.hen a %or$ard bias is applied to a p-n *unction# it lo$ers the value o% potential barrier+ !n the case o% a
%or$ard bias# the potential barrier opposes the applied volta&e+ ,ence# the potential barrier across the
*unction &ets reduced+
Chapter 14 - Semiconductor Electronics Materials Devices And Simple Circuits
Class !! "hysics
Question 14.6:
9or transistor action# $hich o% the %ollo$in& statements are correct'
(a)Base# emitter and collector re&ions should have similar si7e and dopin&
concentrations+
(b)-he base re&ion must be very thin and li&htly doped+
(c)-he emitter *unction is %or$ard biased and collector *unction is reverse biased+
(d)Both the emitter *unction as $ell as the collector *unction are %or$ard biased+ Ans$er
-he correct statement is (b), (c).
9or a transistor action# the *unction must be li&htly doped so that the base re&ion is very thin+ Also# the
emitter *unction must be %or$ard-biased and collector *unction should be reverse-biased+
Question 14.7:
9or a transistor ampli%ier# the volta&e &ain
(a) remains constant %or all %re0uencies+
(b)is hi&h at hi&h and lo$ %re0uencies and constant in the middle %re0uency ran&e+
(c) is lo$ at hi&h and lo$ %re0uencies and constant at mid %re0uencies+
(d)8one o% the above+
Ans$er
-he correct statement is (c).
-he volta&e &ain o% a transistor ampli%ier is constant at mid %re0uency ran&e only+ !t is lo$ at hi&h and
lo$ %re0uencies+
Question 14.8:
!n hal%-$ave recti%ication# $hat is the output %re0uency i% the input %re0uency is :; ,7+ .hat is the
output %re0uency o% a %ull-$ave recti%ier %or the same input %re0uency+ Ans$er
!nput %re0uency 5 :; ,7
9or a hal%-$ave recti%ier# the output %re0uency is e0ual to the input %re0uency+
+-+6utput %re0uency 5 :; ,7
9or a %ull-$ave recti%ier# the output %re0uency is t$ice the input %re0uency+ +-+6utput %re0uency 5 < / :;
5 1;; ,7
By Vikash sharma at abc claases
By Vikash sharma at abc claases
Question 14.9:
9or a CE-transistor ampli%ier# the audio si&nal volta&e across the collected resistance o% < k= is < V+
Suppose the current ampli%ication %actor o% the transistor is 1;;# %ind the input si&nal volta&e and base
current# i% the base resistance is 1 k=+ Ans$er
Collector resistance# >C 5 < k= 5 <;;; =
Audio si&nal volta&e across the collector resistance# V 5 < V
Current ampli%ication %actor o% the transistor# ?2 5 1;;
Base resistance# >B 5 1 k= 5 1;;; =
!nput si&nal volta&e 5 Vi
Base current 5 1B
.e have the
ampli%ication relation as'
Volta&e ampli%ication
5
<
@
1;;;
5;#;1 V
1;;/ <;;;
-here%ore# the input si&nal volta&e o% the ampli%ier is ;+;1 V+
-here%ore# the base current o%
the ampli%ier is 1; uA+
Question 14.1:
-$o ampli%iers are connected one a%ter the other in series (cascaded)+ -he %irst ampli%ier has a volta&e
&ain o% 1; and the second has a volta&e &ain o% <;+ !% the input si&nal is ;+;1 volt# calculate the output
ac si&nal+ Ans$er
Volta&e &ain o% the %irst ampli%ier# V1 5 1; Volta&e &ain
o% the second ampli%ier# V< 5 <; !nput si&nal volta&e# V
5 ;+;1 V 6utput AC si&nal volta&e 5 Vo
-he total volta&e &ain o% a t$o-sta&e cascaded ampli%ier is &iven by the product o%
volta&e &ains o% both the sta&es# i+e+#
V 5 V1 / V<
5 1; / <; 5 <;;
.e have the relation'
y-Y
V; 5 V / V
5 <;; / ;+;1 5 < V
-here%ore# the output AC si&nal o% the &iven ampli%ier is < V+
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Base resistance is &iven by the relation'
By Vikash sharma at abc claases
Question 14.11:
A p-n photodiode is %abricated %rom a semiconductor $ith band &ap o% <+A eV+ Can it detect a
$avelen&th o% B;;; nm2
Ans$er
Ener&y band &ap o% the &iven photodiode# E& 5 <+A eV .avelen&th#
A 5 B;;; nm 5 B;;; / 1;
-C
m -he ener&y o% a si&nal is &iven by
the relation' he
E
5 D
.here#
h 5 "lanckEs constant 5 B+B<B
/ 1;
-F4
Gs c 5 Speed o% li&ht 5
F / 1;
A
m?s
B+B<B / 1= x F / 1;@ E H
B;;; /1;IE
5 F+F1F / 1;
-<;
G
But 1+B / 1;
-1C
G 5 1 eV
+-+E 5 F+F1F / 1;
-<;
G
5 F+F1F/1;J
1+B /l6I
1C
-he ener&y o% a si&nal o% $avelen&th B;;; nm is ;+<;D eV# $hich is less than <+A eV -the ener&y band
&ap o% a photodiode+ ,ence# the photodiode cannot detect the si&nal+
Question 14.12:
-he number o% silicon atoms per m
F
is : / 1;
<A
+ -his is doped simultaneously $ith : / 1;
<<
atoms per m
F
o% Arsenic and : / 1;
<;
per m
F
atoms o% !ndium+ Calculate the number o% electrons and holes+ 1iven
that n#5 1+: / 1;
1B
m
-F
+ !s the material n-type or p-type2
Ans$er
8umber o% silicon atoms# 8 5 : / 1;
<A
atoms?m
F
8umber o% arsenic atoms# nAs 5 : / 1;
<<
atoms?m
F
8umber o% indium atoms# nIn 5 : / 1;
<;
atoms?m
F
8umber o% thermally-&enerated electrons# n#- 5 1+: / 1;
1B
electrons?m
F
8umber o% electrons# ne 5 : / 1;
<<
- 1+: / 1;
1B
/ 4+CC / 1;
<<
8umber o% holes 5 nh
!n thermal e0uilibrium# the concentrations o% electrons and holes in a semiconductor are related as'
nenh 5 n#-
<
-here%ore# the number o% electrons is appro/imately 4+CC / 1;
<<
and the number o% holes is about 4+:1
/ 1;
C
+ Since the number o% electrons is more than the number o% holes# the material is an n-type
semiconductor+
By Vikash sharma at abc claases
By Vikash sharma at abc claases
Question 14.13:
!n an intrinsic semiconductor the ener&y &ap Egis 1+< eV+ !ts hole mobility is much smaller than electron
mobility and independent o% temperature+ .hat is the ratio bet$een conductivity at B;;K and that at
F;;K2 Assume that the temperature dependence o% intrinsic carrier concentration n#is &iven by
r E . i
$here n; is a constant+
Ans$er
Ener&y &ap o% the &iven intrinsic semiconductor# Eg 5 1+< eV
-he temperature dependence o% the intrinsic carrier-concentration is $ritten as'
.here#
kB 5 Bolt7mann constant 5 A+B< / 1;
-:
eV?K - 5
-emperature n; 5 Constant
!nitial temperature# T1 5 F;; K
-he intrinsic carrier-concentration at this temperature can be $ritten as'
2kn y. .100
(1)
9inal temperature# -< 5 B;; K
-he intrinsic carrier-concentration at this temperature can be $ritten as'
M#< 5 L;
e/p
2 !cn / fiOO
(<)
-he ratio bet$een the conductivities at B;; K and at F;; K is e0ual to the ratio bet$een the respective
intrinsic carrier-concentrations at these temperatures+
-here%ore# the ratio bet$een the conductivities is 1+;C / 1;
:
+
Question 14.14:
!n a p-n *unction diode# the current ! can be e/pressed as
$here !; is called the reverse saturation current# V is the volta&e across the diode and is positive %or
%or$ard bias and ne&ative %or reverse bias# and ! is the current throu&h the diode# kBis the Bolt7mann
By Vikash sharma at abc claases
By Vikash sharma at abc claases
constant (A+B/1;
-:
eV?K) and - is the absolute temperature+ !% %or a &iven diode !; 5 : / 1;
-1<
A and -
5 F;; K# then
(a).hat $ill be the %or$ard current at a %or$ard volta&e o% ;+B V2
(b).hat $ill be the increase in the current i% the volta&e across the diode is increased
to ;+D V2
(c) .hat is the dynamic resistance2
(d).hat $ill be the current i% reverse bias volta&e chan&es %rom 1 V to < V2 Ans$er
!n a p-n *unction diode# the e/pression %or current is &iven as'
.here#
!; 5 >everse saturation current 5 : / 1;
-1<
A - 5
Absolute temperature 5 F;; K
kB 5 Bolt7mann constant 5 A+B / 1;
-:
eV?K 5 1+FDB / 1;
-<F
G K
-1
V 5 Volta&e
across the diode (a) 9or$ard volta&e# V 5 ;+B V
+ Current# !
5 : / 1;
M'
/ e/pN<<#FBO 5 ;+;<:B A
-here%ore# the %or$ard current is about ;+;<:B A+
can $rite'
5 : / 1;I
1<
/ e/pN<B+<:* 5 1+<:D A
,ence# the increase in current# A! 5 I
1+<:D ;+;<:B 1+<F A
By Vikash sharma at abc claases
(b) 9or %or$ard volta&e# V 5
;+D V# $e
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(c) Dynamic resistance
1+<F P<F
(d) !% the reverse bias
volta&e chan&es %rom 1 V
to < V# then the current (!) $ill almost remain e0ual to !; in both cases+ -here%ore# the dynamic
resistance in the reverse bias $ill be in%inite+
Question 14.15:
Qou are &iven the t$o circuits as sho$n in 9i&+ 14+44+ Sho$ that circuit (a) acts as 6> &ate $hile the
circuit (b) acts as A8D &ate+
Ans$er
(a) A and B are the inputs and Q is the output o% the &iven circuit+ -he le%t hal% o% the &iven %i&ure
acts as the 86> 1ate# $hile the ri&ht hal% acts as the 86- 1ate+ -his is sho$n in the %ollo$in& %i&ure+
,ence# the output o% the 86> 1ate 5 J
R

:
-his $ill be the input %or the 86- 1ate+ !ts output $ill be
A

+

H
= A + B
:.Y = A + B
,ence# this circuit %unctions as an 6> 1ate+
(b) A and B are the inputs and Y is the output o% the &iven circuit+ !t can be observed %rom the
%ollo$in& %i&ure that the inputs o% the ri&ht hal% 86> 1ate are the outputs o% the t$o 86- 1ates+
NOT Gates NOR Gate
,ence# the output o% the &iven circuit can be $ritten as'
,ence# this circuit %unctions as an A8D 1ate+
Question 14.16:
.rite the truth table %or a 8A8D &ate connected as &iven in 9i&+ 14+4:+
,ence identi%y the e/act lo&ic operation carried out by this circuit+ Ans$er
A acts as the t$o inputs o% the 8A8D &ate and Y is the output# as sho$n in the %ollo$in& %i&ure+
By Vikash sharma at abc claases
!
By Vikash sharma at abc claases
NAND '
,ence# the output can be $ritten as'
Y = A A = A + A = A #S(;
-he truth table %or e0uation (?E) can be dra$n as'
! "
1 1
; 1
1 ;
-his circuit %unctions as a 86- &ate+ -he symbol %or this lo&ic circuit
is sho$n as'
Question 14.17:
Qou are &iven t$o circuits as sho$n in 9i&+ 14+4B# $hich consist o% 8A8D &ates+ !denti%y the lo&ic
operation carried out by the t$o circuits+
Ans$er
!n both the &iven circuits# A and B are the inputs and Q is the output+
(a) -he output o% the le%t 8A8D &ate $ill be^B, as sho$n in the %ollo$in& %i&ure+
NANTX
,ence# the output o% the combination o% the t$o 8A8D &ates is &iven as'
Y = ( A B ) [ A * B ] = AB + AB = AB ,ence#
this circuit %unctions as an A8D &ate+
(b) A is the output o% the upper le%t o% the 8A8D &ate and B is the output o% the lo$er hal% o% the
8A8D &ate# as sho$n in the %ollo$in& %i&ure+
By Vikash sharma at abc claases
By Vikash sharma at abc claases
NAND (
,ence# the output o% the combination o% the 8A8D &ates $ill be &iven as'
Y = ^t ~B= A + B = A + B
,ence# this circuit %unctions as an 6> &ate+
Question 14.18:
.rite the truth table %or circuit &iven in 9i&+ 14+4D belo$ consistin& o% 86> &ates and identi%y the lo&ic
operation (6># A8D# 86-) $hich this circuit is per%ormin&+
(,int' A 5 ;# B 5 1 then A and B inputs o% second 86> &ate $ill be ; and hence Q51+ Similarly $ork
out the values o% Q %or other combinations o% A and B+ Compare $ith the truth table o% 6># A8D# 86-
&ates and %ind the correct one+) Ans$er
A + R
A and B are the inputs o% the &iven circuit+ -he output o% the %irst 86> &ate is + ! t
can be observed %rom the %ollo$in& %i&ure that the inputs o% the second 86> &ate become the out put
o% the %irst one+
NOR (Gate NOR tiaie
,ence# the output o% the combination is &iven as'
Y = A + B + A + B =~A~B + A. B
= A B = A + B = A + B -he truth
table %or this operation is
&iven as'
-his is the truth table o% an 6> &ate+ ,ence# this circuit %unctions as an 6>
&ate+ Question 14.19:
.rite the truth table %or the circuits &iven in 9i&+ 14+4A consistin& o% 86>
&ates only+ !denti%y the lo&ic operations (6># A8D# 86-) per%ormed by the
t$o circuits+
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A B
Y (#! $ %)
; ; ;
; 1 1
1 ; 1
1 1 1
By Vikash sharma at abc claases
Ans$er
(a) A acts as the t$o inputs o% the 86> &ate and Y is the output# as sho$n in the
A + A
%ollo$in& %i&ure+ ,ence# the output o% the circuit is +
NOK Gate
6utput# Y = A + A = A
-he truth table %or the same is &iven as'
-his is the truth table o% a 86- &ate+ ,ence# this circuit
%unctions as a 86- &ate+ (b) A and B are the inputs and Y is the output o%
the &iven circuit+ By usin& the result obtained in solution (a), $e can in%er that the
outputs o% the %irst t$o 86> &ates
A and R
are E a s sho$n in the %ollo$in& %i&ure+
Page 15 of 16
Chapter 14 - Semiconductor Electronics Materials Devices And Simple Circuits
Class !! "hysics
N OK Gate
NOR Gales A
and H
- are the inputs %or the last 86> &ate+ ,ence# the output %or the circuit can be $ritten as'
Y = A + K = A H = A - H -he truth
table %or the same can be $ritten as'
A B
Y (#! & %)
; ; ;
; 1 ;
By Vikash sharma at abc claases
A
H) Y
; 1
1 ;
By Vikash sharma at abc claases
1 ; ;
1 1 1
-his is the truth table o% an A8D &ate+ ,ence# this circuit %unctions as
an A8D &ate+
Page 16 of 16
By Vikash sharma at abc claases