PD - 93891A

IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features TERMINAL DIAGRAM Collector

•Most Rugged in Industry •BVCES = 370V min, 430V max

•Logic-Level Gate Drive •IC @ TC = 110°C = 14A
•> 6KV ESD Gate Protection Gate
R1 •VCE(on) typ= 1.2V @7A @25°C
•Low Saturation Voltage R2 • IL(min)=11.5A @25°C,L=4.7mH
•High Self-clamped Inductive Switching Energy
Description
Emitter

The advanced IGBT process family includes a JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and IRGS14C40L IRGSL14C40L IRGB14C40L
Gate-Collector which provide over voltage
protection capability in ignition circuits. NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.

Absolute Maximum Ratings

Parameter Max Unit Condition
VCES Collector-to-Emitter Voltage Clamped V RG = 1K ohm
IC @ TC = 25°C Continuous Collector Current 20 A VGE = 5V
IC @ TC = 110°C Continuous Collector Current 14 A VGE = 5V
IG Continuous Gate Current 1 mA
IGp Peak Gate Current 10 mA tPK = 1ms, f = 100Hz
VGE Gate-to-Emitter Voltage Clamped V
PD @ TC = 25°C Maximum Power Dissipation 125 W
PD @ T = 110°C Maximum Power Dissipation 54 W
TJ Operating Junction and - 40 to 175 °C
TSTG Storage Temperature Range - 40 to 175 °C
VESD Electrostatic Voltage 6 KV C = 100pF, R = 1.5K ohm
IL Self-clamped Inductive Switching Current 11.5 A L = 4.7mH, T = 25°C

Thermal Resistance
Parameter Min Typ Max Unit
RθJC Thermal Resistance, Junction-to-Case 1.2
RθJA Thermal Resistance, Junction-to-Ambient 40 °C/W
(PCB Mounted, Steady State)
ZθJC Transient Thermal Impedance, Juction-to-Case (Fig.11)

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L
Off-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fig
BVCES Collector-to-Emitter Breakdown Voltage 370 400 430 V R G = 1K ohm, I C=7A, VGE = 0V
BVGES Gate-to-Emitter Breakdown Voltage 10 12 V I G=2m A
I CES Collector-to-Emitter Leakage Current 15 µA R G=1K ohm, VCE = 250V
100 µA R G=1K ohm, VCE = 250V, TJ =150°C
BVCER Emitter-to-Collector Breakdown Voltage 24 28 V I C = -10m A
R1 Gate Series Resistance 75 ohm
R2 Gate-to-Emitter Resistance 10 20 30 K ohm

On-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min Typ Max Unit Conditions Fig
1.2 1.40 I C = 7A, VGE = 4.5V
VCE(on) Collector-to-Emitter Saturation 1.35 1.55 V I C = 10A, VGE = 4.5V 1
o
Voltage 1.35 1.55 I C = 10A, VGE = 4.5V, TC= -40 C 2
o
1.5 1.7 I C = 14A, VGE = 5.0V, TC= -40 C 4
1.55 1.75 I C = 14A, VGE = 5.0V
o
1.6 1.8 I C = 14A, VGE = 5.0V, TC=150 C
o
VGE(th) Gate Threshold Voltage 1.3 1.8 2.2 V VCE = VGE, I C = 1 m A, TC=25 C 3, 5
o
0.75 1.8 VCE = VGE, I C = 1 m A, TC=150 C 8
o
gfs Transconductance 10 15 19 S VCE = 25V, I C = 10A, TC=25 C
IC Collector Current 20 A VCE = 10V, VGE = 4.5V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min Typ Max Unit Conditions Fig
Qg Total Gate charge 27 I C = 10A, VCE=12V, VGE=5V 7
Q ge Gate - Emitter Charge 2.5 nC I C = 10A, VCE=12V, VGE=5V 15
Q gc Gate - Collector Charge 10 I C = 10A, VCE=12V, VGE=5V
t d(on) Turn - on delay time 0.6 0.9 1.35 VGE=5V, RG=1K ohm, L=1mH, VCE=14V 12
tr Rise time 1.6 2.8 4 µs VGE=5V, RG=1K ohm, L=1mH, VCE=14V 14
t d(off) Turn - off delay time 3.7 6 8.3 VGE=5V, RG=1K ohm, L=1mH, VCE=300V
C ies Input Capacitance 550 825 VGE=0V, VCE=25V, f=1M H z
C oes Output Capacitance 100 150 pF VGE=0V, VCE=25V, f=1M H z 6
C res Reverse Transfer Capacitance 12 18 VGE=0V, VCE=25V, f=1M H z
25 L=0.7m H, TC=25°C
IL Self-Clamped 15.5 A L=2.2m H, TC=25°C 9
Inductive Switching Current 11.5 L=4.7m H, TC=25°C 10
16.5 L=1.5m H, TC=150°C 13
7.5 L=4.7m H, TC=150°C 14
6 L=8.7m H, TC=150°C
o
TJ =150 C,
t SC Short Circuit Withstand Time 120 µs VCC = 16V, L = 10µH 14
R G = 1K ohm, VGE = 5V

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L
Fig.1 - Typ. Output Characteristics Fig.2 - Typ. Output Characteristics
TJ=25°C TJ=125°C
60 60
VGE = 10 V
VGE = 10 V
VGE = 5.0V
50 50 VGE = 5.0V
VGE = 4.5V
VGE = 4.5V
VGE = 4.0V
VGE = 4.0V
VGE = 3.7V
40 40 VGE = 3.7V
IC (A)

IC (A)
30 30

20 20

10 10

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE (V) VCE (V)

Fig.3 - Transfer Characteristics Fig.4 - Typical VCE vs TJ

VCE=20V; tp=20µs VGE=4.5V
100 1.6
TJ = 25°C
90
TJ = 125°C
1.5
80
I C = 10A
70
1.4
60
V CE ( V )
I CE (A )

50 1.3

40
1.2
30

20
1.1
I C = 7A
10

0 1.0
0 2 4 6 8 10 -50 0 50 100 150 200
VGE (V) TJ (°C)

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L
Fig.5 - Typical VGE(th) vs TJ Fig.6 - Typ. Capacitance vs VCE
I C=1mA VGE=0V; VCE=25V; f=1MHz
2.2 1000

2.0 C ies

Capacitance (pF)
1.8 100
V GE(th) ( V )

C oes
1.6

1.4 10

C res
1.2

1.0 1
-50 0 50 100 150 200 1 10 100
TJ (°C) VCE (V)

Fig.7 - Typ. Gate Charge vs VGE Fig.8 - Typical VCE vs VGE

I C=10A; VCE=12V; VGE=5V
20
5.5

5.0 18

4.5 16

4.0 14
3.5
12
V CE (V )
V GE (V )

3.0
10
I C= 7A; 125°C
2.5
8 I C = 7A; 25°C
2.0 I C=10A; 125°C
6 I C=10A; 25°C
1.5

1.0 4

0.5 2

0.0 0
0 5 10 15 20 25 30 2.5 3 3.5 4 4.5
QG, Total Gate Charge (nC) VGE (V)

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L
Fig.9 - Self-clamp Avalance Current vs Fig.10 - Self-clamp Avalance Current
Inductance @ 25°C vs Inductance @ 150°C
40 20
Open-secondary Current (A)

18

Open-secondary Current (A)

35

16
30
14

25 Typical 12 Typical

10
20

8 Minimum
15 Minimum
6

10
4
0 1 2 3 4 5
0 2 4 6 8 10
Inductance (mH) Inductance (mH)

Fig.11 - Transient Thermal Impedance, Junction-to-Case

10
Thermal Response(Z thJC)

1
D = 0.50

0.20

0.10 PDM
0.1
0.05 t1
t2
0.02
0.01 SINGLE PULSE Notes:
(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (sec)

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L
Fig.12 - Switching Waveform for Time Measurement
VGE= 5V; RG= 1KΩ; L= 1mH; VCE= 14V; used circuit in Fig.14

450 8
400 VClamp 7
350 6
300 Vcl (measured) 5
(V)

V GE (V )
250 4
clamp

200 VGE 3
150 2
V

100 1
t d (o f f )
50 0
0 -1
tr
-50 -2
-14 -10 -6 -2 2 6 10 14
t (µs)

Fig.13 - Self-clamped Inductive Switching Waveform

L=4.7mH; TC=25°C; used circuit in Fig.14

12 500

10 I V clamp 400
CE

8 300
V clamp (V )
(A)

6 200
CE
I

4 100

2 0

0 -100
-2.E-05 -1.E-05 0.E+00 1.E-05 2.E-05 3.E-05 4.E-05 5.E-05 6.E-05
time

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L
Fig.14 - Test Circuit

0.47 Ω

1KΩ
D.U.T.

Ice

Fig.15 - Gate Charge Circuit

L
VC C
DUT
0
1K

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L

TO-263AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415) -B- 10.16 (.400)

10.29 (.405) 4.69 (.185) REF.
1.40 (.055) 4.20 (.165)
-A- 1.32 (.052)
MAX. 1.22 (.048)
2
6.47 (.255)
6.18 (.243)

1.78 (.070) 15.49 (.610) 2.79 (.110)

1.27 (.050) 1 3 14.73 (.580) 2.29 (.090)

5.28 (.208) 2.61 (.103)

4.78 (.188) 2.32 (.091)

8.89 (.350)
1.40 (.055) 1.39 (.055) REF.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1.14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 (.200) 0.25 (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

NOTES: LEAD ASSIGNMENTS 8.89 (.350)

1 DIMENSIONS AFTER SOLDER DIP. 1 - GATE
2 - DRAIN 17.78 (.700)
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 - SOURCE
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)

2.54 (.100)
2.08 (.082) 2X
2X

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L

TO-263AB Package Outline in Tape and Reel

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L

TO-262AA Package Outline

Dimensions are shown in millimeters (inches)

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 IRGS14C40L
Ignition IGBT IRGSL14C40L
IRGB14C40L

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

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