Symbol

V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
28 40
54 75
R
JL
21 30
W
Maximum Junction-to-Lead
C
Steady-State C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
AF
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State C/W
25 Gate-Source Voltage
Drain-Source Voltage -30
Continuous Drain
Current
AF
Maximum Units Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-10.5
-60 Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
3
2.1
-55 to 150
T
A
=70C
I
D
-12.5
AO4427
30V P-Channel MOSFET
Product Summary
V
DS
(V) = -30V
I
D
= -12.5 A (V
GS
= -20V)
R
DS(ON)
< 12m (V
GS
= -20V)
R
DS(ON)
< 14m (V
GS
= -10V)
ESD Rating: 2KV HBM

100% UIS Tested
100% Rg Tested
General Description
The AO4427 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
S
G
D
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4427
Symbol Min Typ Max Units
BV
DSS
-30 V
-1
T
J
=55C -5
I
GSS
10 A
V
GS(th)
-1.7 -2.5 -3 V
I
D(ON)
-60 A
9.4 12
T
J
=125C 12.2 15
11.5 14 m
32 m
g
FS
24 S
V
SD
-1 V
I
S
-4.2 A
C
iss
2330 2900 pF
C
oss
480 pF
C
rss
320 448 pF
R
g
3.4 6.8 10
Q
g
41 52 nC
Q
gs
10 nC
Q
gd
12 nC
t
D(on)
12.8 ns
t
r
10.3 ns
t
D(off)
49.5 ns
t
f
29 ns
t
rr
28 35
ns
Q
rr
20 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-12.5A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-12.5A
Reverse Transfer Capacitance
I
F
=-12.5A, dI/dt=100A/s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS A
Gate Threshold Voltage V
DS
=V
GS
I
D
=-250A
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-12.5A
V
GS
=-10V, I
D
=-10A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.2,
R
GEN
=3
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-10V, V
DS
=-15V,
I
D
=-12.5A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
A: The value of R
JA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t 10s junction to ambient thermal resistance rating.
Rev8: Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
GS
=-10V, V
DS
=-15V, I
D
=-12.5A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
10
20
30
0 1 2 3 4 5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-
I
D

(
A
)
V
GS
=-4V
-4.5V
-5V
-6V
-10V
0
5
10
15
20
25
1 1.5 2 2.5 3 3.5 4 4.5 5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-
I
D
(
A
)
8
9
10
11
12
0 5 10 15 20 25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S
(
O
N
)

(
m

)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
I
S

(
A
)
25C
125C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
l
i
z
e
d

O
n
-
R
e
s
i
s
t
a
n
c
e
V
GS
=-10V
I
D
=-10A
V
GS
=-20V
I
D
=-12.5A
0
10
20
30
40
50
4 5 6 7 8 9 10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S
(
O
N
)

(
m

)
25C
125C
V
DS
=-5V
V
GS
=-10V
V
GS
=-20V
I
D
=-12.5A
25C
125C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
GS
=-10V, V
DS
=-15V, I
D
=-12.5A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
V
G
S

(
V
o
l
t
s
)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
C
iss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
o
w
e
r

(
W
)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z

J
A

N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1 1 10 100
-V
DS
(Volts)
-
I
D

(
A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-12.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C 10s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com