5-1

Semiconductor
Features
14A and 13A, 275V and 250V
r
DS(ON)
= 0.28 and 0.34
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
275V, 250V DC Rated - 120V AC Line System
Operation
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards
Description
These are N-Channel enhancement mode silicon gate
power eld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specied level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER PACKAGE BRAND
IRF244 TO-204AA IRF244
IRF245 TO-204AA IRF245
IRF246 TO-204AA IRF246
IRF247 TO-204AA IRF247
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright Harris Corporation 1997
File Number 2209.2
IRF244, IRF245,
IRF246, IRF247
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specied
IRF244 IRF245 IRF246 IRF247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . V
DS
250 250 275 275 V
Drain to Gate Voltage (R
GS
= 20k) (Note 1) . . . . . . . . . V
DGR
250 250 275 275 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 14 13 14 13 A
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
8.8 8.0 8.8 8.0 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
DM
56 52 56 52 A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20 20 20 20 V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125 125 125 125 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 1.0 1.0 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
550 550 550 550 mJ
Operating and Storage Temperature . . . . . . . . . . . . . T
J
, T
STG
-55 to 150 -55 to 150 -55 to 150 -55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . T
L
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specications T
C
= 25
o
C, Unless Otherwise Specied
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= 250A
(Figure 10)
IRF244, IRF245 250 - - V
IRF246, IRF247 275 - - V
Gate to Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250A 2.0 - 4.0 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 25 A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 125
o
C
- - 250 A
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
IRF244, IRF246 14 - - A
IRF245, IRF247 13 - - A
Gate to Source Leakage Current I
GSS
V
GS
= 20V - - 100 nA
Drain to Source On-State Resistance (Note 2) r
DS(ON)
V
GS
= 10V, I
D
= 8A, (Figures 8, 9)
IRF244, IRF246 - 0.20 0.28
IRF245, IRF247 - 0.24 0.34
Forward Transconductance (Note 2) g
fs
V
DS
50V, I
D
= 8A, (Figure 12) 6.7 10 - S
Turn-On Delay Time t
d(ON)
V
DD
= 125V, I
D
14A, R
G
= 9.1, R
L
= 8.9
(Figures 17, 18) MOSFET Switching Times
are Essentially Independent of Operating
Temperature
- 16 24 ns
Rise Time t
r
- 67 100 ns
Turn-Off Delay Time t
d(OFF)
- 53 80 ns
Fall Time t
f
- 49 74 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 x Rated
BV
DSS
, I
g(REF)
= 1.5mA,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
- 39 59 nC
Gate to Source Charge Q
gs
- 6.6 - nC
Gate to Drain Miller Charge Q
gd
- 20 - nC
IRF244, IRF245, IRF246, IRF247
5-3
IRF244, IRF245, IRF246, IRF247
Input Capacitance C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 11)
- 1300 - pF
Output Capacitance C
OSS
- 320 - pF
Reverse-Transfer Capacitance C
RSS
- 69 - pF
Internal Drain Inductance L
D
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 5.0 - nH
Internal Source Inductance L
S
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the
Source Bonding Pad
- 12.5 - nH
Junction to Case R
JC
- - 1.0
o
C/W
Junction to Ambient R
JA
Free Air Operation - - 30
o
C/W
Source to Drain Diode Specications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
- - 14 A
Pulse Source to Drain Current
(Note 3)
I
SM
- - 56 A
Source to Drain Diode Voltage (Note 2) V
SD
T
J
= 25
o
C, I
SD
= 14A, V
GS
= 0V (Figure 13) - - 1.8 V
Reverse Recovery Time t
rr
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/s 150 300 640 ns
Reverse Recovered Charge Q
RR
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/s 1.6 3.4 7.2 C
Forward Turn-On Time t
ON
Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by L
S
+ L
D
- - - -
NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4.5mH, R
G
= 25, peak I
AS
= 14A. See Figures 15, 16.
Electrical Specications T
C
= 25
o
C, Unless Otherwise Specied (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
L
S
L
D
G
D
S
G
D
S
5-4
IRF244, IRF245, IRF246, IRF247
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
0 50 100 150
0
T
C
, CASE TEMPERATURE (
o
C)
P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

M
U
L
T
I
P
L
I
E
R
0.2
0.4
0.6
0.8
1.0
1.2
T
C,
CASE TEMPERATURE (
o
C)
50 75 100 25 150
15
12
9
0
6
I
D
,
D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
3
IRF245, IRF247
125
IRF244, IRF246
10
1
0.1
0.01
10
-2
10
-5
10
-4
10
-3 0.1 1 10
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
DUTY FACTOR: D = t
1
/t
2
t
2
P
DM
t
1
NOTES:
t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
0.2
0.1
0.05
0.01
0.02
0.001
0.5
Z

J
C
,

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L
I
M
P
E
D
A
N
C
E

(
o
C
/
W
)
100
10
1 10 100
0.1
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10s
100s
1ms
DC
10ms
IRF246,
IRF244, 246
1000
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
IRF244, 246
IRF245, 247
IRF245, 247
IRF247
IRF244,
IRF245
1000
1
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
25 50 75 100 0 125
25
20
15
0
10
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
GS
=5.5V
V
GS
=4.5V
V
GS
= 5.0V
V
GS
=4.0V
80s PULSE TEST
5
V
GS
=6.0V
V
GS
=10V
5-5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specied (Continued)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2 4 6 8 0 10
25
20
15
0
10
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
80s PULSE TEST
5
10V
5.5V
4.5V
V
GS
= 5.0V
4.0V
6.0V
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
10
1
0.1
0 2 4 6 8 10
80s PULSE TEST
V
DS
50V
T
J
= 150
o
C T
J
= 25
o
C
60
I
D,
DRAIN CURRENT (A)
15 30 45 0 75
2.5
2.0
1.5
0
1.0
r
D
S
(
O
N
)
,

D
R
A
I
N

T
O

S
O
U
R
C
E
V
GS
= 20V
0.5
V
GS
= 10V
80s PULSE TEST
O
N

R
E
S
I
S
T
A
N
C
E

(

)
3.0
1.8
0.6
80 -60
T
J
, JUNCTION TEMPERATURE (
o
C)

N
O
R
M
A
L
I
Z
E
D

D
R
A
I
N

T
O

S
O
U
R
C
E
2.4
1.2
0
0 60 120 160
O
N

R
E
S
I
S
T
A
N
C
E

V
O
L
T
A
G
E
I
D
= 14A
-20 -40 20 40 100 140
V
GS
= 10V
1.25
1.05
0.85
60 -60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
R
M
A
L
I
Z
E
D

D
R
A
I
N

T
O

S
O
U
R
C
E
1.15
0.95
0.75
-20 20 100 160
B
R
E
A
K
D
O
W
N

V
O
L
T
A
G
E
0 -40 40 80 120 140
I
D
= 250A
0 10 100
P
F
,

C
A
P
A
C
I
T
A
N
C
E

(
C
)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
IRF244, IRF245, IRF246, IRF247
5-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specied (Continued)
I
D,
DRAIN CURRENT (A)
5 10 15 20 0 25
15
12
9
0
6
g
f
s
,

T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E

(
S
)
80s PULSE TEST
3
V
DS
50V
T
J
= 150
o
C
T
J
= 25
o
C
I
S
D
,

S
O
U
R
C
E

T
O

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
0.1
0 0.4 0.8 1.2 1.6 2.0
T
J
= 25
o
C T
J
= 150
o
C
Q
g(TOT),
TOTAL GATE CHARGE (nC)
12 24 36 48 0 60
4
20
8
V
G
S
,

G
A
T
E

T
O

S
O
U
R
C
E

V
O
L
T
A
G
E

(
V
)
16
V
DS
= 200V
I
C
= 14A
V
DS
= 125V
V
DS
= 50V
12
0
IRF244, IRF245, IRF246, IRF247
5-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50% 50%
10%
PULSE WIDTH
V
GS
0
0
0.3F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
IRF244, IRF245, IRF246, IRF247
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