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Documente Profesional
Documente Cultură
SiS412DN
New Product
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
TrenchFET
Power MOSFET
100 % R
g
Tested
APPLICATIONS
Notebook PC
- System Power
- Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a
Q
g
(Typ.)
30
0.024 at V
GS
= 10 V 12
3.8 nC
0.030 at V
GS
= 4.5 V 12
N-Channel MOSFET
G
D
S
Ordering Information: SiS412DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm 3.30 mm
PowerPAK 1212-8
Bottom View
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 81 C/W.
e. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
20
Continuous Drain Current (T
J
= 150 C)
T
C
= 25 C
I
D
12
a
A
T
C
= 70 C
12
a
T
A
= 25 C
8.7
b, c
T
A
= 70 C
7
b, c
Pulsed Drain Current I
DM
30
Continuous Source-Drain Diode Current
T
C
= 25 C
I
S
12
a
T
A
= 25 C
2.7
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS 5
Single Pulse Avalanche Energy E
AS 1.25
mJ
Maximum Power Dissipation
T
C
= 25 C
P
D
15.6
W
T
C
= 70 C 10
T
A
= 25 C
3.2
b, c
T
A
= 70 C
2
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
C
Soldering Recommendations (Peak Temperature)
e, f
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t 10 s R
thJA
32 39
C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
6.5 8
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2
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
Vishay Siliconix
SiS412DN
New Product
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 A 30 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 A
35
mV/C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 4.5
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 A 1.0 2.5 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V 1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C 5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 7.8 A 0.020 0.024
V
GS
= 4.5 V, I
D
= 7.0 A 0.024 0.030
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 7.8 A 17 S
Dynamic
b
Input Capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
435
pF Output Capacitance C
oss
95
Reverse Transfer Capacitance C
rss
42
Total Gate Charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 7.8 A 8 12
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.8 A
3.8 6
Gate-Source Charge Q
gs
1.4
Gate-Drain Charge Q
gd
1.1
Gate Resistance R
g
f = 1 MHz 1.5 3.2 4.5
Turn-On Delay Time t
d(on)
V
DD
= 15 V, R
L
= 2.4
I
D
6.3 A, V
GEN
= 4.5 V, R
g
= 1
15 25
ns
Rise Time t
r
12 20
Turn-Off Delay Time t
d(off)
13 20
Fall Time t
f
10 15
Turn-On Delay Time t
d(on)
V
DD
= 15 V, R
L
= 2.4
I
D
6.3 A, V
GEN
= 10 V, R
g
= 1
5 10
Rise Time t
r
10 15
Turn-Off Delay Time t
d(off)
15 25
Fall Time t
f
10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 C 4.2
A
Pulse Diode Forward Current I
SM
30
Body Diode Voltage V
SD
I
S
= 6.3 A, V
GS
= 0 V 0.8 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= 6.3 A, dI/dt = 100 A/s, T
J
= 25 C
15 25 ns
Body Diode Reverse Recovery Charge Q
rr
7 12 nC
Reverse Recovery Fall Time t
a
9
ns
Reverse Recovery Rise Time t
b
6
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
www.vishay.com
3
Vishay Siliconix
SiS412DN
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 thru 4 V
V
GS
= 3 V
V
DS
- Drain-to-Source Voltage (V)
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
0.010
0.015
0.020
0.025
0.030
0.035
0 5 10 15 20 25 30
V
GS
= 10 V
V
GS
= 4.5 V
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
)
R
D
S
(
o
n
)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 2 4 6 8
V
DS
= 24 V
I
D
= 7.8 A
V
DS
= 15 V
-
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q
g
- Total Gate Charge (nC)
V
G
S
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25 C
T
C
= 125 C
T
C
= - 55 C
V
GS
- Gate-to-Source Voltage (V)
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
C
rss
0
100
200
300
400
500
600
0 5 10 15 20 25 30
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C
-
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 7.8 A
T
J
- Junction Temperature (C)
(
N
o
r
m
a
l
i
z
e
d
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
o
n
)
www.vishay.com
4
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
Vishay Siliconix
SiS412DN
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
= 25 C
T
J
= 150 C
V
SD
- Source-to-Drain Voltage (V)
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
I
S
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 A
(
V
)
V
G
S
(
t
h
)
T
J
- Temperature (C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0
0.02
0.04
0.06
0.08
0 2 4 6 8 10
T
J
= 25 C
T
J
= 125 C
I
D
= 7.8 A
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
)
R
D
S
(
o
n
)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
50
P
o
w
e
r
(
W
)
Time (s)
10 1000 0.1 0.01 0.001 100 1
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 C
Single Pulse
100 s
1s
10 s
Limited by R
DS(on)
*
BVDSS Limited
1 ms
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
www.vishay.com
5
Vishay Siliconix
SiS412DN
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (C)
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Power Derating
0
4
8
12
16
25 50 75 100 125 150
T
C
- Case Temperature (C)
P
o
w
e
r
(
W
)
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6
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
Vishay Siliconix
SiS412DN
New Product
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69006.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 1000 10
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 81 C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
0.2
Duty Cycle = 0.5
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
10
-3
10
-2
1 10
-1
10
-4
0.05
0.02
Single Pulse
0.1
Square Wave Pulse Duration (s)
Document Number: 71656 www.vishay.com
Revison: 03-May-10 1
Package Information
Vishay Siliconix
PowerPAK
1212-8, (SINGLE/DUAL)
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 0.00 - 0.05 0.000 - 0.002
b 0.23 0.30 0.41 0.009 0.012 0.016
c 0.23 0.28 0.33 0.009 0.011 0.013
D 3.20 3.30 3.40 0.126 0.130 0.134
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
D3 0.48 - 0.89 0.019 - 0.035
D4 0.47 TYP. 0.0185 TYP.
D5 2.3 TYP. 0.090 TYP.
E 3.20 3.30 3.40 0.126 0.130 0.134
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 1.75 1.85 1.98 0.069 0.073 0.078
E4 0.34 TYP. 0.013 TYP.
e 0.65 BSC 0.026 BSC
K 0.86 TYP. 0.034 TYP.
K1 0.35 - - 0.014 - -
H 0.30 0.41 0.51 0.012 0.016 0.020
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
0 - 12 0 - 12
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 TYP. 0.005 TYP.
ECN: S10-0951-Rev. J, 03-May-10
DWG: 5882
3. Dimensions exclusive of mold flash and cutting burrs
1.
Notes:
2
Inch will govern
Dimensions exclusive of mold gate burrs
Backside View of Single Pad
Backside View of Dual Pad
Detail Z
D1
D2
D
1
E1
c
A
4 5
1
8
D
2
4
3
H
2
1
e
b
E2
L
b
D
3
(
2
x
)
4
3
2
1
A1
Z
K
K
1
W
M
D
4
E3
E4
D
5
H K
E4
E2
L
D
2
D
4
E3
D
5
L1
2
2
D
E
H
Vishay Siliconix
AN822
Document Number 71681
03-Mar-06
www.vishay.com
1
PowerPAK
C
/
W
)
Spreading Copper (sq. in.)
100 %
50 %
0 %
Figure 6. Spreading Copper - Junction-to-Ambient Performance
R
A
J
(
C
/
W
)
h
t
50
60
70
80
90
100
110
120
130
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Spreading Copper (sq. in.)
100 %
0 %
50 %
Application Note 826
Vishay Siliconix
Document Number: 72597 www.vishay.com
Revision: 21-Jan-08 7
A
P
P
L
I
C
A
T
I
O
N
N
O
T
E
RECOMMENDED MINIMUM PADS FOR PowerPAK
1212-8 Single
0
.
0
8
8
(
2
.
2
3
5
)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.860)
0
.
0
9
4
(
2
.
3
9
0
)
0.039
(0.990)
0.068
(1.725)
0.010
(0.255)
0.016
(0.405)
0.026
(0.660)
0.025
(0.635)
0.030
(0.760)
Return to Index
Return to Index
Legal Disclaimer Notice
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Vishay
Revision: 02-Oct-12
1
Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.