Semiconductor Components Industries, LLC, 2010

July, 2010 Rev. 7

1 Publication Order Number:
NTD40N03R/D
NTD40N03R
Power MOSFET
45 A, 25 V, NChannel DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
HighEfficiency DCDC Converters
These are PbFree Devices
MAXIMUM RATINGS (T
J
= 25C unless otherwise specified)
Parameter Symbol Value Unit
DraintoSource Voltage V
DSS
25 Vdc
GatetoSource Voltage Continuous V
GS
20 Vdc
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
C
= 25C
Drain Current
Continuous @ T
C
= 25C, Chip
Continuous @ T
A
= 25C, Limited by Wires
Single Pulse (tp 10 ms)
R
qJC
P
D
I
D
I
D
I
D
3.0
50
45
32
100
C/W
W
A
A
A
Thermal Resistance JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
A
= 25C
Drain Current Continuous @ T
A
= 25C
R
qJA
P
D
I
D
71.4
2.1
9.2
C/W
W
A
Thermal Resistance JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
A
= 25C
Drain Current Continuous @ T
A
= 25C
R
qJA
P
D
I
D
100
1.5
7.8
C/W
W
A
Operating and Storage Temperature Range T
J
, T
stg
55 to
175
C
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
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45 AMPERES, 25 VOLTS
R
DS(on)
= 12.6 mW (Typ)
MARKING DIAGRAM
& PIN ASSIGNMENTS
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
D
S
G
Y
W
W
T
4
0
N
0
3
G
4 Drain
3
Source
1
Gate
2
Drain
NCHANNEL
1
2
3
4
4 Drain
1
Gate
2
Drain
3
Source
Y
W
W
T
4
0
N
0
3
G
4
1
2
3
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
Y = Year
WW = Work Week
T40N03 = Device Code
G = PbFree Package
CASE 369D
DPAK
(Straight Lead)
STYLE 2
NTD40N03R
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2
ELECTRICAL CHARACTERISTICS (T
J
= 25C unless otherwise specified)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V(br)
DSS
25

28

Vdc
mV/C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150C)
I
DSS

1.0
10
mAdc
GateBody Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
I
GSS
100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0

1.7

2.0

Vdc
mV/C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 10 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
R
DS(on)

18.6
12.6
23
16.5
mW
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 10 Adc)
g
FS
20
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
584 pF
Output Capacitance C
oss
254
Transfer Capacitance C
rss
99
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 10 Adc, R
G
= 3 W)
t
d(on)
4.5 ns
Rise Time t
r
19.5
TurnOff Delay Time t
d(off)
16.7
Fall Time t
f
3.5
Gate Charge
(V
GS
= 4.5 Vdc, I
D
= 10 Adc,
V
DS
= 10 Vdc) (Note 3)
Q
T
5.78 nC
Q
1
2.1
Q
2
2.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 10 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 10 Adc, V
GS
= 0 Vdc, T
J
= 125C)
V
SD

0.85
0.71
1.2

V
dc
Reverse Recovery Time
(I
S
= 10 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
20.4 ns
t
a
8.25
t
b
12.1
Reverse Recovery Stored Charge Q
RR
0.007 mC
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD40N03R
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3
1.8
1.6
1.2
1.4
1
0.8
0.6
1000
100
10,000
8
4
12
0
20
0.016
0 10
4
4 2
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
M
P
S
)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
M
P
S
)
0
0.032
0.040
12 8 4
0.024
0.016
0.008
0
16
Figure 3. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
R
D
S
(
o
n
)
,

D
R
A
I
N

T
O

S
O
U
R
C
E

R
E
S
I
S
T
A
N
C
E

(
W
)
R
D
S
(
o
n
)
,

D
R
A
I
N

T
O

S
O
U
R
C
E

R
E
S
I
S
T
A
N
C
E

(
W
)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (C)
Figure 6. DraintoSource Leakage Current
versus Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
S
(
o
n
)
,

D
R
A
I
N

T
O

S
O
U
R
C
E

R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
I
D
S
S
,

L
E
A
K
A
G
E

(
n
A
)
20
50 50 25 0 25 75 125 100
0 3 4 2 1 5
0 12 16 8 20 4
0
0.008
0.024
0.040
0 20 25 15 10 5
V
GS
= 2.6 V
6
8
12
V
DS
10 V
T
J
= 25C
T
J
= 55C
T
J
= 125C
T
J
= 25C
T
J
= 55C
T
J
= 125C
V
GS
= 10 V
V
GS
= 4.5 V
150
V
GS
= 0 V
T
J
= 150C
T
J
= 125C
I
D
= 10 A
V
GS
= 10 V
0.032
T
J
= 25C
T
J
= 55C
T
J
= 125C
20
16
8
16
8 V
4 V
2.8 V
3 V
3.2 V
6 V
T
J
= 150C
T
J
= 150C
3.4 V
3.5 V
10 V
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4
100
10
1
8
6
4
2
0
20
18
16
10
6
0
10 10
1000
15 5 0 20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE
(VOLTS)
C
,

C
A
P
A
C
I
T
A
N
C
E

(
p
F
)800
600
400
200
0
5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
V
G
S
,

G
A
T
E

T
O

S
O
U
R
C
E

V
O
L
T
A
G
E

(
V
O
L
T
S
)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
,

S
O
U
R
C
E

C
U
R
R
E
N
T

(
A
M
P
S
)
t
,

T
I
M
E

(
n
s
)
0 8 6 4 2
1 10 100 0 0.4 0.2 0.8 1.0
I
D
= 10 A
T
J
= 25C
V
GS
V
GS
= 0 V V
DS
= 0 V T
J
= 25C
C
rss
C
iss
C
oss
C
rss
4
2
0.6
Q
2
C
iss
V
DS
= 10 V
I
D
= 10 A
V
GS
= 10 V
V
GS
= 0 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
V
DS
Q
1
Q
T
T
J
= 25C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
100
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
M
P
S
)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
SINGLE PULSE
V
GS
= 20 V
T
C
= 25C
1 ms
100 ms
10 ms
dc
8
14
12
10 ms
NTD40N03R
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5
Figure 12. Thermal Response
r
(
t
)
,

E
F
F
E
C
T
I
V
E

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
t, TIME (s)
0.1
1.0
0.01
1 10 0.1 0.01 0.001 0.0001 0.00001
0.2
D = 0.5
0.1
R
qJC
(t) = r(t) R
qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.05
0.01
SINGLE PULSE
0.02
ORDERING INFORMATION
Device Package Shipping

NTD40N03R1G DPAK (Straight Lead)

(PbFree)
75 Units/Rail
NTD40N03RT4G DPAK
(PbFree)
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD40N03R
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6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369AA01
ISSUE B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
b
D
E
b3
L3
L4
b2
e
M 0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 0.040 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 3.93
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
1 2 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243

mm
inches

SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW 5
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7
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369D01
ISSUE B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1 2 3
4
V
S
A
K
T
SEATING
PLANE
R
B
F
G
D 3 PL
M 0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z 0.155 3.93
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTD40N03R/D
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