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AO4422
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
D
D
D
D
D
S
S
S
G
G
S
SOIC-8
ID
IDM
TA=70C
B
TA=25C
Power Dissipation
20
50
3
2.1
TJ, TSTG
-55 to 150
Symbol
t 10s
Steady-State
Steady-State
9.3
PD
TA=70C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
11
TA=25C
Continuous Drain
Current A
Maximum
30
RTJA
RTJL
Typ
31
59
16
Max
40
75
24
Units
C/W
C/W
C/W
AO4422
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IGSS
VGS(th)
VDS=VGS ID=250PA
VGS=4.5V, VDS=5V
1
40
VGS=10V, ID=11A
TJ=125C
VGS=4.5V, ID=10A
gFS
VSD
IS
Forward Transconductance
VDS=5V, ID=11A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
tD(on)
tr
tD(off)
Turn-Off DelayTime
Turn-Off Fall Time
Qgd
tf
trr
Qrr
IF=11A, dI/dt=100A/Ps
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/Ps
2
Units
V
1
5
PA
100
nA
1.8
V
A
12.6
16.8
19.6
15
21
24
TJ=55C
Max
30
ID=250PA, VGS=0V
RDS(ON)
Typ
VDS=24V, VGS=0V
IDSS
ID(ON)
Min
Conditions
25
0.75
m:
m:
S
4.3
1040
pF
180
pF
110
pF
0.7
19.8
nC
9.8
nC
2.5
nC
3.5
nC
4.5
ns
3.9
ns
17.4
ns
3.2
17.5
ns
7.6
ns
nC
A: The value of R TJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R TJA is the sum of the thermal impedence from junction to lead RTJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 Ps pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
AO4422
20
4V
10V
25
20
3.5V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
125C
8
10
VGS=3V
25C
4
5
0
0
0
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
Normalized On-Resistance
1.6
22
VGS=4.5V
20
RDS(ON) (m:)
VGS(Volts)
Figure 2: Transfer Characteristics
24
18
16
14
VGS=10V
12
10
VGS=10V
ID=10A
1.4
VGS=4.5V
1.2
0.8
0
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
60
1.0E+00
50
ID=10A
1.0E-01
40
IS (A)
RDS(ON) (m:)
2.5
125C
1.0E-02
25C
30
1.0E-03
125C
20
1.0E-04
25C
1.0E-05
10
2
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4422
10
VDS=15V
ID=11A
1250
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
250
Crss
0
0
12
16
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
50
RDS(ON)
limited
100Ps
10ms
0.1s
1s
1.0
TJ(Max)=150C
TA=25C
DC
1
10
100
0.01
0.1
10
100
1000
D=Ton/T
TJ,PK=TA+PDM.ZTJA.RTJA
RTJA=40C/W
20
0
0.001
VDS (Volts)
10
30
10
10s
0.1
0.1
TJ(Max)=150C
TA=25C
40
10Ps
1ms
10.0
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
10
100
1000