The changes in pulse width and output power with and without

the soliton effect are shown in Fig. 3 as a function of pump

power. Without the soliton effect (i.e. PM-DSF is not installed in
the cavity), the output pulse width was 7ps. No change in the
pulse width was observed when the pump power was varied, while
the output power increased linearly. O n the other hand, when the
soliton effect using PM-DSF is incorporated, the output pulse
width shortened with increases in the pump power. In tho soliton
formation process, the soliton pulse width decreases linearly with
a n increase in the energy in the cavity as long a s the soliton
remains a n N = I soliton.
In conclusion, we have succeeded in obtaining stable operation
in a harmonically and regeneratively modelocked erbium-doped
libre ring laser which has a 2.7ps pulse width at IOGHa.
0 IEE 1994

2Y J u l j 1991

pled resonators realised in coplanar waveguide. This technology

allows active elements t o be easily grounded thereby eliminating
via holes which add to the cost a n d introduce high inductance at
microwaye frequencies. The passband of the proposed design is
centred at 5GHz with less than I ' X bandwidth.
Thc transistoi- used in the active bandpass filter is a chip F E T
from NEC, model NE900000. Using LIBRA7M.its small signal
equivalent circuit is extracted from the S-parameters specified in
the data sheets.
As a first step in the determination of the equibalent circuit, the
circuit parameters were set t o typical GaAs F E T parameter values.
Thesc values are then optimised until the calculated S-parameters
fit closely t o the S-parameters of the F E T in thc 2- IXCHz frcquency range.
Thc resonator lengths of the active bandpass filter are estimated
using the following equations:

E/ectmnicS Letter.? Oniine No: IYY41072

M. Nakazawa, E. Yoshida and Y. Kimura ( N 7 T Optirul Trmisnii.s.rion

Line Laboratory. Access Netnork System.s Luborutorirs Tokar. /liurukiken 3 1 Y - l l . Jupun)

References
1

4
5

and MIYALAWA. 11.: '30GHr picosecond puke

generation from actively mode-locked erbium-doped fihre laser',
E l w t r o n . L e t t . , 1990. 26, pp. 216~217
H ~ I G G E G.R.:
~ ,
'Mode-locking of CW lasers by rcgencratibc rf
feedback'. AppI Phys. Lett., 1968, 13. pp. 186-187
KINSEL. 7,s: 'A stabilized mode-locked Nd:YAIC laser using
electronic feedback', IEEE J . Quuiitiiiii E / i ~ t r o i i . 1973,
,
QE-9. pp.
3-~x
KIIAUL. F , BKABEC. 'r., WINTER.
E., SCHMI'S. A.J., I mi.L., and
KCITI.c.: 'Mode-locking of a diode laser pumped Nd:glass laser hy
nonlinear regenerative feedback'. CLEO '90. 1990, Paper CFKh
SPFNCL!. U I!..
~ V A N C Ei. M..
SLEA I . w . t ,
and
S I H H I . I r. w ;
'Regeneralively initiated self-mode-locked Ti:sapphire laser'. Opt.
L E I / . .1991. 16, pp. 1762-1704
K A F K A . J.D., W4TTS. M L.. ;and P l E l E R S E , J.J : '~lcosecond and
femtosecond pulse generation In a regeneratively mode-locked
Ti:sapphire laser'. IEEE .I. Quantum Electron., 1992. QE-28, pp.
21 5 I 2162
YAK,4/.4WA. M , UAKASHIM1. N , and TOKUDA. M.: 'All optoelectronic
self-oscillatory circuit with an optical fiber delayed feedback and its
injection locking technique', .I. L i g h f i m i v Techno/.. 1984. 1.T-2. pp,
719 730
1.AU. K Y . and
YARI!'. 4 :
'Self-susldined picosccoild pulse
generation in a GaAlAs laser at an electrically tunable rcpctition
rate by optoelectronic feedback', Appl. P h w Lett., 1984. 4 5 pp.
1 2 4 ~126
.TAKAI)A. A .

wherc I , , a n d /,,, are the length extensions due to the input and
output capacitances of the FET. respectively.
Length extensions /, , and I, ,, can be calculated by nsing

wherc C, and C,, are optimised to be 0.4781 and 0.1 I I I pF, respectively. The last equation gives /, , = 2.921mm and 1,. = 0.686mm.
Hence, I, = 9.271mm and I2 = I1.506mm.
Finally. the circuit dimensions are optimised using LIBRAm.
This step is critical as the theory regards FETs as entirely unilateral devices in order to simplify the analysis of the circuit. In reality, they have feedback elements which will change the
performance of the designed filter. As the S-parameters of the
bilateral F E T are used during optimisation, these factors will bc
compensated for by the optimised dimensions o f the filter, which
arc found to be: I , = 7.874mm. /! = 10.668mm. .S, = 0.051mm and
S1= I).X64mm.

Coplanar waveguide active bandpass filter

S. Uysal, K.S. Ang and P.S. Kooi
Iiidc,uing terms: Act1 ye filters, Bantlpo.rs filtem. Coplunur

waveguide. Microwaw lilrers

A novel microwave active bandpass filter has been designed in
coplanar waveguide. The approach uses a GaAs FET 10 link two

end-coupled resonators. The realised active filter nor only

compensates for the Iosscs as compared to a passive lilter bul also
provides an overall gain of 17.54dB.Flexibility in tuning thc filter
response through the bias voltage and its superior performance at
the harmonics over the passive filters are among the advantages
of the design.
Desigii nirrliod: It is usually required that the filter circuit introduces little attenuation to the main signal. Active filters can conipensate for the high signal loss at microwave frequencies. with the
potential to offer gain. They can also be designed t o have sharp
cutoff with a minimum number of sections. Compact filters o f this
kind are required in radar. satellite and mobile communications.
Several approaches have been proposed in the literature to
implement active microwave filters [I-31. The approach reported
in this Letter concentrates o n using G a A s FETs to link end-cou-

ELECTRONICS LETTERS

15th September 1994

Fig. 1 Circuit layyour of CPW active bandpassfilter with bias network

The layout of the active filter with bias network is shown in

Fig. I . The circuit is built on a 25.4 x 25.4 x 0.635 mm' alumina
substrate with E, = 9.9. The biasing point of the F E T is at V(,,, =
= 8 V and I,, = 50mA.
3V,
Thc measured results without the F E T are shown in Fig. 2. We
observe two harmonics with slightly widening bandwidths. Insertion loss at the design centre frequency is -8dB with 9dB return
loss. The primary cause for the high insertion loss is radiation.
The half-wavelength resonators behave like antennas a t the design
frequency.
The measured results for the active filter are given in Fig. 3. The
measured filter bandwidth is -0.2'%. Gain in the passband is in
excess of 20dB with 17.5448 overall gain. The harmonics are now
-30dH lower than the fundamental. The effect of varying the gate

Vol. 30

No. 79

1605

CD IEE 1994

S . Uysul, K. S . Ang and P. S . Kooi (Elrcrricul Engineering

Depurfnient, Nurionul Universiiy uf Singupore, 10 Kent R i d p Crpscent.
Sin~upore051 I . Republic, if Singapore)

-2 0
C

E 40

References

I2 July 1994

Electronics Lerrers Online No: IYY4107/

60

A I 0

2
3

MOALLAM. M R., and AGHVAMI. A H.: 'Design concepts Of a novel

micriiwavc active filter', IEEE /ut. J . Microwuve rind ComputcjrA i d d Enn., 1992. 2, ( I ) , pp. 28-33
RALISC'HER. c : 'Microwave active tiilters based on transversal and
recursive priniciples', IEEE Truns.. 1985. MTT-33, pp. 1350-1360
CHANG. c.. and ITOH, I : 'Microwave active filters based on coupled
negalive resistance method', I E E E Tron~.,1990. MTT-38. pp. 172-

185

I n

- _ _ 1 _ _ 1 - : 2 u k3 frequency, GHz

b ?

'

Effects of thin-film nonuniformity on thinfilm open end microstrip line for miniature
multilayer MMlCs

18

A S . Rong, V.K. Tripathi and Z.L. Sun

Fig. 2 Meuswed results wirhou, FET

!I

Transmission

h Return loss

/nde.ring r e r m ~ Strip
:
lines, Thin j i k circuirs. M M I C T

--

voltage has also been investigated. By increasing the gate bias

from --3 t o -1 V, we have observed that the bandwidth is increased
t o 1%) with a shift in the centre frequency to 5.15GHz. However,
this is also accompanied by a decrease in the passband gain from
17.54 to 3.45dB. Thus, the frequency response of the filter is sensitive t o variations in the gate bias. The applied gate voltages represent two extremes, one being very close t o the pinch-off voltage
while the other is a t ii lower voltage. In this way we obtain some
tuning flexibility iii the active filter response.

Inrroduction: The recently introduced thin-film microstrip tecbriique has been widely applied to miniature multilayer MMICs [I-31,
where niicrostrips are used for fundamental transmiasion lines.
They are arranged in such a way that niultiple metal layers and
thin dielectric films are deposited onto the wafer, and the thin dielectric lilms serve as the substratc for microstrip lines. This
xrrangeinent allows for a considerable increase in [he packing density and provides a great flexibility of design. In this Letter, a
comprehensive characterisation of the open end of thin-film
microstrip lines is presented. Special attention is paid to the electrical behaviour of the discontinuity when the thin dielectric film is
truncated near the open end.

--

-3 0
0.c
a4

The eflects (11' thin-film nonuniformily on the open end of thinfilm microstrip lines for miniature multilayer MMlCs are
analysed. The formulation is mplemenled hy the 3-D finite
difference method in conjunction with the higher order asymptotic
boundary condition. Special Lredtmcnt o f mesh nodes ;at the
corner and the fringes of the boundary is given by interpolation.
The results presented show that the field distribuiions are highly
disturbed by the nonuniformity of the thin dielcctnc lilm, and
that the elecrrical peribrmance wries as the thin dielectric film is
truncdtcd near the open end.

k W 4

Transmission in 4-6GHz range

h Transmission in 2-18GHz range

(.

Fig. I ('on/igururiun oJ open end

form ihiii dielecrric film

Conclusion; An active CPW bandpass filter has been designed with

an overall passband gain of 17.54dB and 0.2% bandwidth a t
5.22GHz. the designed active filter also offers significant harmonic reduction as compared t o a n end-coupled passive filter.

1606

E53

k---Wd+

Return lobs in 2-~18GHzrange

U/

.sing/e microatrip line wirh

nonuni-

Formuhrion; The formulation is implemented by the 3-D finite

difference method in conjunction with a higher ordel- asymptotic
boundary condition (ABC). Fig. I shows the configuration of the

ELECTRONICS LETTERS

15th September 1994

Vol. 30

No. 79