Documente Academic
Documente Profesional
Documente Cultură
Preferred Device
http://onsemi.com
TRIACS
4.0 A RMS, 200 600 V
Features
MT2
MT1
G
REAR VIEW
SHOW TAB
TO225
CASE 077
STYLE 5
2 1
MARKING DIAGRAM
1. Cathode
2. Anode
3. Gate
x
y
Y
WW
G
YWW
2N
607xyG
= 1, 3, 5
= A, B
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
2N6071A/B Series
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
VDRM,
VRRM
IT(RMS)
4.0
ITSM
30
I2t
3.7
A2s
PGM
10
PG(AV)
0.5
V
200
400
600
VGM
5.0
TJ
40 to +110
Tstg
40 to +150
8.0
in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RqJC
3.5
C/W
RqJA
75
C/W
TL
260
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
*Indicates JEDEC Registered Data.
http://onsemi.com
2
2N6071A/B Series
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
10
2
mA
mA
1.4
2.5
0.2
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM,
IRRM
TJ = 25C
TJ = 110C
ON CHARACTERISTICS
*Peak On-State Voltage (Note 3) (ITM = "6.0 A Peak)
VTM
VGT
VGD
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "1 Adc)
TJ = 40C
TJ = 25C
IH
tgt
V
V
mA
30
15
1.5
ms
QUADRANT
(Maximum Value)
Type
IGT @ TJ
I
mA
II
mA
III
mA
IV
mA
2N6071A
2N6073A
2N6075A
+25C
10
40C
20
20
20
30
2N6071B
2N6073B
2N6075B
+25C
40C
15
15
15
20
dv/dt(c)
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
*Indicates JEDEC Registered Data.
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0V
VEE
14
MC7400
4
7
VEE = 5.0 V
+
510
W
2N6071A
http://onsemi.com
3
LOAD
115 VAC
60 Hz
2N6071A/B Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
VTM
Symbol
Parameter
VDRM
IDRM
VRRM
IRRM
VTM
IH
Holding Current
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2
+ Voltage
IDRM at VDRM
VTM
(+) MT2
Quadrant II
(+) MT2
() IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT
+ IGT
() MT2
Quadrant III
() MT2
Quadrant IV
(+) IGT
GATE
() IGT
GATE
MT1
MT1
REF
REF
MT2 NEGATIVE
(Negative Half Cycle)
Firing Quadrant
I
TTL
HTL
CMOS (NAND)
III
2N6071A Series
2N6071A Series
2N6071A Series
2N6071A Series
2N6071B Series
2N6071B Series
2N6071A Series
2N6071A Series
2N6071B Series
IV
2N6071B Series
CMOS (Buffer)
Operational Amplifier
II
2N6071A Series
2N6071A Series
http://onsemi.com
4
2N6071A/B Series
110
110
= 30
TC , CASE TEMPERATURE ( C)
TC , CASE TEMPERATURE ( C)
60
100
= 30
60
90
90
180
dc
80
70
120
120
90
180
a
80
1.0
2.0
3.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
70
4.0
= CONDUCTION ANGLE
0
1.0
2.0
3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
6.0
a
P(AV) , AVERAGE POWER (WATTS)
4.0
8.0
dc
120
= CONDUCTION ANGLE
90
60
4.0
= 30
2.0
dc
6.0
= 180
= CONDUCTION ANGLE
120
4.0
2.0
30
60
90
0
3.0
1.0
2.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
4.0
1.0
2.0
3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
1.0
0.7
0.5
0.3
60
40
20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (C)
4.0
dc
= CONDUCTION ANGLE
0
90
100
120
140
3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
1.0
0.7
0.5
0.3
60
40
20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (C)
120
http://onsemi.com
5
140
2N6071A/B Series
40
IH, HOLDING CURRENT (NORMALIZED)
3.0
30
20
10
7.0
5.0
2.0
1.0
0.7
0.5
0.3
60
TJ = 110C
3.0
GATE OPEN
APPLIES TO EITHER DIRECTION
40
20
20
40
60
80
100
120
140
2.0
1.0
PEAK SINE WAVE CURRENT (AMP)
34
0.7
0.5
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
32
30
28
26
24
TJ = 40 to +110C
f = 60 Hz
22
20
18
16
14
1.0
5.0
2.0
4.0
5.0
7.0
10
3.0
10
5.0
MAXIMUM
3.0
2.0
TYPICAL
1.0
0.5
0.3
0.2
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
http://onsemi.com
6
500
1.0 k
2.0 k
5.0 k
10 k
2N6071A/B Series
ORDERING INFORMATION
Device
2N6071A
2N6071AG
2N6071B
Package
TO225
TO225
(PbFree)
TO225
2N6071BG
TO225
(PbFree)
2N6071BT
TO225
2N6071BTG
2N6073A
2N6073AG
2N6073B
2N6073BG
2N6075A
2N6075AG
2N6075B
2N6075BG
Shipping
TO225
(PbFree)
TO225
TO225
(PbFree)
TO225
TO225
(PbFree)
TO225
TO225
(PbFree)
TO225
TO225
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
7
2N6071A/B Series
PACKAGE DIMENSIONS
TO225
CASE 7709
ISSUE Z
B
U
Q
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 07701 THRU 08 OBSOLETE, NEW STANDARD
07709.
C
M
1 2 3
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
V
G
S
R
0.25 (0.010)
D 2 PL
0.25 (0.010)
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
STYLE 5:
PIN 1. MT 1
2. MT 2
3. GATE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
http://onsemi.com
8
2N6071/D