International Journal of Semiconductor

Science & Technology (IJSST)

ISSN(P): 2250-1576; ISSN(E): 2278-9405
Vol. 4, Issue 1, Oct 2014, 15-20
TJPRC Pvt. Ltd.

COMPARATIVE STUDY OF THERMAL NOISE OF Si SURROUNDING GATE MOSFET

(SGMOSFET) WITH DIFFERENT GATE OXIDES
SARADINDU PANDA1, CHIRADEEP MUKHERJEE2, B. MAJI3 & A. K. MUKHOPADHYAY4
1
2

Department of Electronics and Communication Engineering, Narula Institute of Technology, Kolkata, India

Electronics & Communication Engineering Department, Institute of Engineering & Management, Kolkata, India
3
4

HOD, ECE, NIT, Durgapur, West Bengal, India

Director, BITM, Santiniketan, Birbhum, West Bengal, India

ABSTRACT
In the modern electronic applications, the use of low power, low noise devices plays an important role. The most
promising device in the nanoscale range are based on multiple gate structures such as Surrounding Gate (SG) MOSFETs.
These devices could be used for high frequency applications due to the significant increase in the transition frequency. In
this paper, compact thermal noise models valid in all regions of operation for SG MOSFETs have been developed and
experimentally verified. In this paper we give the thermal noise performance of various substrates with respect to different
oxides and propose best cases.

KEYWORDS: Compact Noise Modeling, SG MOSFETs, Thermal Noise, Silicon di Oxide, Silicon Nitride, Alumina
INTRODUCTION
We have seen the modeling of noise in case of Surrounding Gate MOSFET (SGMOSFET) in our previous work
[1]. These devices are manufactured in different research laboratory. But growing technology gives silicon arena the
several complexities. Different data simulators use the data to implement several analytical models. We retrospect the
model for analysis of noise in case of SGMOSFET. In this paper, we represent comparative noise analysis in case of
modeling of thermal noise for SGMOSFET.
We use an analytical model where Na is the acceptor concentration Na in the silicon layer with thickness equal to
tsi; tox is the equivalent gate oxide thickness; and the radius of the cylinder is R.

ANALYTICAL NOISE MODELLING

In our previous work ,we modelled the Thermal noise behaviour of SGMOSFET[1].The expression for power
spectral density is given by:

Sid =

1
I D .L2

VDS

g 2 c (V , E )
.S 2 dV
g (V , E ) in

(1)

The drain current for SGMOSFETis given by

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Saradindu Panda, Chiradeep Mukherjee, B. Maji & A. K. Mukhopadhyay

Qs 2 QD 2
2VT (Qs QD ) +

2Cox
2 R
ID =

L
Q + Q0
+VT Q0 log D

QS + Q0

(2)

Here QS is the mobile charge density per unit area and QD is Q at the drain end. The expression for the charge
sheet density per unit are is given by :
2COX VT 2

Q0

2
2

2C V

Q = COX OX T + 4VT 2

Q0
+

Vgs Vth + Vth V

Log 2 1 + exp

2VT

(3)

We need an another expression of inverse charge for calculating the Threshold voltage as:

= C OX

2C OX VT 2

Q0

2
2C OXVT 2

+ 4V T

Q
0

V g s V to V
L o g 2 1 + e x p

2V T

(4)

Lastly threshold voltage expression is given as:

Q
Vth = V0 + 2VT log 1 +

2Q0 ,
/

Vto = +

Where

CoxVT 2

Q0 /
Vth =
Q
Q/
Q0 +
2

and

qN A 2 qN A
8
R +
R + VT ln 2
4 si
2Cox
R

Cox = ox

( R ln (1 + t

ox

R))

(5)
qni 2

si N A
VT

and

(6)

Here q is electronic charge, NA being the intrinsic carrier concentration, si is the permittivity of silicon, is the
work function difference between the gate electrode and same to that of intrinsic silicon, Csi is the silicon capacitance and
Cox is the oxide capacitance, is the effective mobility [2], R is effective radius of cylindrical surface of the device and
finally L is the channel length.
In this paper we have taken an n-type SGMOSFET .We make a comparative study by taking Si-substrate with
different oxides.
For each observation we take Si-substrate along with SiO2 as oxide, then Si3N4 as oxide and finally alumina as
oxide. In each case we vary channel length L, Channel Radius R, Doping Concentration Na and operating temperature.

COMPARATIVE RESULT ANALYSIS

We consider here Silicon (Si) as well as Gallium Arsenide (GaAs) as substrate. We have taken Silicon with
different oxides. The oxides used here are Silicon Dioxide, Silicon Nitride and lastly Alumina.

Impact Factor (JCC): 3.8869

Index Copernicus Value (ICV): 3.0

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Comparative Study of Thermal Noise of Si Surrounding Gate MOSFET (SGMOSFET) with Different Gate Oxides

When Radius of SGMOSFET is decreasing then Oxide capacitance increases as they are inversely related to each
other. So drain current will increase as mobile charge per unit gate area is directly proportional to Oxide Capacitance.
Thermal Noise Spectral Density will be decreasing as shown by the Figure 1, The Thermal Noise Power density
for different oxides are shown by Figure 2.

Figure 1: Modeled Thermal Noise Prior

to Velocity Saturation for Different
Radius of the Cylindrical Substrate

Figure 2: Modeled Thermal Noise Prior

to Velocity Saturation for Different Radius of the
Cylindrical Substrate Using Different Oxides

Equation 1 shows us that Thermal noise is inversely proportional to Channel Length. So Thermal noise Spectral
density Sid will decrease as shown in figure 3:

Figure 3: Modeled Thermal Noise Prior

to Velocity Saturation for Different Channel Length

Figure 4: Modeled Thermal Noise Prior

to Velocity Saturation for Different Channel Length
of the Cylindrical Substrate Using Different Oxides

The Thermal Noise Power density by varying Channel Length for different oxides on different substrates is shown
by Figure 4. When we increase the operating Temperature the Thermal Noise Spectral Density Sid will be increased as
shown in figure 5.

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Saradindu Panda, Chiradeep Mukherjee, B. Maji & A. K. Mukhopadhyay

Figure 5: Modeled Thermal Noise Prior

to Velocity Saturation for Different
Temperature

Figure 6: Modeled Thermal Noise Prior

to Velocity Saturation for Different Operating
Temperature Using Different Oxides

When we increase the doping concentration then mobile charge (Q) per unit area will be increased. The increased
Q will increase the drain current as Q and Oxide capacitance are directly proportional as a result thermal Power spectral
density will decrease as shown in figure 7,8:

Figure 7: Modeled Thermal Noise Prior

to Velocity Saturation for Different
Doping Concentration

Figure 8: Modeled Thermal Noise Prior to

Velocity Saturation for Different Doping
Concentration Using Different Oxides

The observations by taking Si Substrate in contrast with Silicon Dioxide, Silicon Nitride and Alumina are given
by Figure 9,10. For each case we take Silicon as substrate at first and verify with aforementioned three oxides. For each
observations, We change the parameters such as Channel Length, Radius of Channel, Operating Temperature and finally
Doping Concentration.

Impact Factor (JCC): 3.8869

Index Copernicus Value (ICV): 3.0

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Comparative Study of Thermal Noise of Si Surrounding Gate MOSFET (SGMOSFET) with Different Gate Oxides

Figure 9a): Modeled Thermal Noise Prior

to Velocity Saturation for Different Channel
Length Using Alumina as Oxide

Figure 9b): Modeled Thermal Noise Prior

to Velocity Saturation for Different Radius
of Channel Using Alumina as Oxide

Figure 9c): Modeled Thermal Noise Prior

to Velocity Saturation for Different Operating
Temperature Using Alumina as Oxide

Figure 9d): Modeled Thermal Noise Prior

to Velocity Saturation for Different Doping
Concentration Using Alumina as Oxide

(10a)
Figure 10a): Modeled Thermal Noise Prior
to Velocity Saturation for Different Channel
Length Using Silicon Nitride as Oxide

(10c)

(10b)
Figure 10b): Modeled Thermal Noise Prior
to Velocity Saturation for Different Radius of
Channel Using Silicon Nitride as Oxide

(10d)

Figure 10c): Modeled Thermal Noise Prior

Figure 10d): Modeled Thermal Noise Prior
to Velocity Saturation for Different Operating
to Velocity Saturation for Different Doping
Temperature Using Silicon Nitride as Oxide
Concentration Using Silicon Nitride as Oxide

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Saradindu Panda, Chiradeep Mukherjee, B. Maji & A. K. Mukhopadhyay

CONCLUSIONS
The thermal noise modeling is very important because when we make thin gate oxide then leakage current plays
an important factor. So as to optimize the Thermal Noise we observe the best case where we have taken Silicon as
substrate. The best cases for Silicon taken as substrate is given as Table 1.
Table 1: Table Showing Thermal Noise Value for Si Substrate Taking Different Varying Parameters
Substrate
Si

Parameters

Oxide

R=10nm,L=50nm, NA=1016/cu.m., T=300K

R=5nm,L=100nm, NA=1018/cu.m., T=300K
R=5nm,L=150nm, NA=1016/cu.m., T=300K

Silicon Dioxide
Silicon Nitride
Alumina

Thermal Noise in
A2/Hz *10-10 A2/Hz
1.319
1.272
1.107

In our modelling we propose best configuration (R=5nm, L=150nm, NA=1016/cu.m., T=300K) by taking
Aluminium di-oxide as gate oxide where Silicon is used as substrate. It can also be used as circuit simulation parameters in
industrial purpose to analyse the noise performance of SGMOSFET. This paper also shows the optimized modelling which
will be very important and helpful for IC optimized design at low power supply.

ACKNOWLEDGEMENTS
The authors like to thank the faculties of ECE dept, Narula Institute of Technology for useful advices.

REFERENCES
1.

S.Panda, B.Maji, A.K.Mukhopadhyay, Thermal Noise Modeling &Analysis of SG MOSFET International

Journal of Emerging Technology and Advanced Engineering,Website: www.ijetae.com (ISSN 2250-2459,
Volume 2, Issue 11, November 2012)

2.

Bogdan-Mihai Nae, COMPACT MODELING OF THE RF AND NOISE BEHAVIOR OF MULTIPLE-GATE

MOSFETS, PhD Thesis, UNIVERSITAT ROVIRA I VIRGILI, DL: T. 1456-2011

3.

Clement H.Wann.,Kenji Noda,Makodo Yoshida,A Comparative stusy of Advanced MOSFET Concepts,

IEEE transactions on electron devices, vol. 43, no. 10, october 1996

4.

Yong-Bin Kim,Challenges for Nanoscale MOSFETs and emerging nanotechnologies, transactions on electrical
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5.

Guang-Xi Hu_ and Ting-Ao Tang, Some Physical Properties of a Surrounding-Gate MOSFETwith Undoped
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6.

M.Cheralathan,A Cerdeira,B.Iniguez, Compact model for long-channel cylindrical surrounding-gate MOSFETs

valid from low to high doping concentrationsJournal of Solid State electronics, Journal
homepage:www.elsevier.com/locate/sse.

Impact Factor (JCC): 3.8869

Index Copernicus Value (ICV): 3.0