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DATA SHEET
M3D176
1N914; 1N916
High-speed diodes
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 03
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
FEATURES
DESCRIPTION
handbook, halfpage
k
MAM246
APPLICATIONS
High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
100
VR
75
IF
75
mA
IFRM
225
mA
IFSM
t = 1 s
t = 1 ms
t=1s
0.5
250
storage temperature
65
+200
junction temperature
175
Ptot
Tstg
Tj
Tamb = 25 C; note 1
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03
mW
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
ELECTRICAL CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
see Fig.5
VR = 20 V
Cd
trr
MAX.
UNIT
1000
mV
25
nA
VR = 75 V
VR = 20 V; Tj = 150 C
50
1N914
pF
1N916
pF
ns
diode capacitance
Vfr
MIN.
ns
2.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
lead length 10 mm
240
K/W
Rth j-a
500
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
GRAPHICAL DATA
MGD289
100
MBG464
600
handbook, halfpage
IF
(mA)
IF
(mA)
400
(1)
50
(2)
(3)
200
0
0
100
T amb ( C)
200
VF (V)
Fig.2
Fig.3
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
101
1
10
102
103
tp (s)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
104
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
MGD006
103
handbook, halfpage
MGD004
1.2
handbook, halfpage
IR
(A)
Cd
(pF)
102
1.0
(1)
(2)
(3)
10
0.8
1
0.6
101
102
0
100
Tj (oC)
0.4
200
f = 1 MHz; Tj = 25 C.
Fig.5
Fig.6
1996 Sep 03
10
VR (V)
20
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
tr
tp
t
D.U.T.
10%
IF
R = 50
S
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R = 50
i
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
1 k
450
I
90%
R S = 50
D.U.T.
OSCILLOSCOPE
V fr
R i = 50
10%
MGA882
t
tr
input
signal
1996 Sep 03
tp
output
signal
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
PACKAGE OUTLINE
0.56
max
1.85
max
4.25
max
25.4 min
25.4 min
MLA428 - 1
Dimensions in mm.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03