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  • Semiconductor Lasers: J. Faist

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    riomj
    45 vizualizări66 pagini
    This document provides an overview of semiconductor lasers and quantum cascade lasers. It begins with a bibliography of relevant literature and outlines the topics to be covered, which include semiconductor materials, waveguiding, heterojunctions, and semiconductor lasers. Key developments are highlighted such as the first GaAs laser in 1962, heterostructure lasers in 1970, and quantum well lasers in the late 1970s and 1980s. The quantum cascade laser is introduced, which uses intersubband transitions in quantum wells for light generation. Milestones include the first demonstration of a quantum cascade laser in 1994 and high temperature operation achieved in later devices.

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    A semiconductor is a material which has electrical conductivity between that of a conductor such as copper and that of an insulator such as glass. Semiconductors are the foundation of modern electronics, including transistors, solar cells, light-emitting diodes (LEDs), and digital and analog integrated circuits. The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of electrons and holes inside a lattice. An increased knowledge of semiconductor materials and fabrication processes has made possible continuing increases in the complexity and speed of microprocessors.

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    This document provides an overview of semiconductor lasers and quantum cascade lasers. It begins with a bibliography of relevant literature and outlines the topics to be covered, which include semiconductor materials, waveguiding, heterojunctions, and semiconductor lasers. Key developments are highlighted such as the first GaAs laser in 1962, heterostructure lasers in 1970, and quantum well lasers in the late 1970s and 1980s. The quantum cascade laser is introduced, which uses intersubband transitions in quantum wells for light generation. Milestones include the first demonstration of a quantum cascade laser in 1994 and high temperature operation achieved in later devices.

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    45 vizualizări66 pagini

    Semiconductor Lasers: J. Faist

    Încărcat de

    riomj
    This document provides an overview of semiconductor lasers and quantum cascade lasers. It begins with a bibliography of relevant literature and outlines the topics to be covered, which include semiconductor materials, waveguiding, heterojunctions, and semiconductor lasers. Key developments are highlighted such as the first GaAs laser in 1962, heterostructure lasers in 1970, and quantum well lasers in the late 1970s and 1980s. The quantum cascade laser is introduced, which uses intersubband transitions in quantum wells for light generation. Milestones include the first demonstration of a quantum cascade laser in 1994 and high temperature operation achieved in later devices.

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    din 66

    Semiconductor lasers

    J. Faist

    J. Faist Quantum Electronics

    Bibliography
    Optoelectronics:
    E. Rosencher, B. Vinter Optolectronique, Masson
    Jasprit Singh Semiconductor Optoelectronics Mc Graw Hill
    A. Yariv Quantum electronics Wiley

    Semiconductor lasers (multi-authors):


    P. Zory Quantum Well lasers Academic Press
    E. Kapon Semiconductor lasers (I, II), Academic Press

    Semiconductor lasers (monographs, out of print):


    G. P. Agrawal, N. K. Dutta Semiconductor lasers, Kluwer

    J. Faist Quantum Electronics

    Outline
    Semiconductor materials: Bands and Gaps
    direct/indirect, gap size

    Waveguides
    Heterojunctions
    Semiconductor lasers

    J. Faist Quantum Electronics

    Materials

    J. Faist Quantum Electronics

    J. Faist Quantum Electronics

    J. Faist Quantum Electronics

    Essential feature: bands and gaps

    J. Faist Quantum Electronics

    Why gaps? Bragg reflection


    Electron

    transmission

    The modulus of the


    wavefunction is proportional
    to (1-R)n

    Energy (meV)

    A periodic modulation of the potential opens gaps in the energy spectrum


    J. Faist Quantum Electronics

    Why bands?: coupling isolated states

    m-1

    (r)

    A periodic array of coupled isolated states forms bands


    J. Faist Quantum Electronics

    Direct semiconductors

    J. Faist Quantum Electronics

    IV: indirect semiconductors

    J. Faist Quantum Electronics

    Semiconductor elements
    Characteristics:
    - Crystalline structure and lattice
    - Nature and size of the gap
    - Doping

    J. Faist Quantum Electronics

    Absorption edge semiconductors

    J. Faist Quantum Electronics

    III-V family
    - Nitrides
    lacking
    - Availability of
    substrates

    J. Faist Quantum Electronics

    Blue lasers: III-V vs II-VI

    - very hard material


    - GaN substrates rares and expensive

    - Can be grown on GaAs


    - Defects not solved
    J. Faist Quantum Electronics

    Injection of minority carriers

    Key number:
    Diffusion length of electron
    and holes

    J. Faist Quantum Electronics

    A key element: the heterojunction

    J. Faist Quantum Electronics

    Heterojunctions

    The junction between two semiconductors with different


    bandgaps may align differently:
    J. Faist Quantum Electronics

    Even stranger heterojunctions


    In this case, the energy
    of the GaSb hole is
    larger than the one of
    the InAs electron!
    One may use this for
    tunneling from
    valence to conduction
    band

    J. Faist Quantum Electronics

    Waveguiding

    J. Faist Quantum Electronics

    Waveguiding

    Simplest, total internal reflection


    Helmholz equation

    J. Faist Quantum Electronics

    Two set of modes: TE and TM

    J. Faist Quantum Electronics

    Solution of the transandental equation

    J. Faist Quantum Electronics

    TE vs TM modes
    The TE mode has
    a better confinement,
    so will lase before

    = 1.55m

    J. Faist Quantum Electronics

    Gain in bulk semiconductor

    J. Faist Quantum Electronics

    Fermi-Dirac distribution

    J. Faist Quantum Electronics

    Adding doping

    J. Faist Quantum Electronics

    Quasi-Fermi levels

    J. Faist Quantum Electronics

    Gain condition

    J. Faist Quantum Electronics

    Gain computation

    J. Faist Quantum Electronics

    Gain versus injection

    J. Faist Quantum Electronics

    Density of states

    J. Faist Quantum Electronics

    Quantum well

    J. Faist Quantum Electronics

    Threshold condition

    J. Faist Quantum Electronics

    Threshold condition

    J. Faist Quantum Electronics

    1962

    First GaAs laser diode


    (pulsed operation, cryogenic temperature)
    (General Electric Research Labs)

    1970

    AlGaAs / GaAs DH laser diode


    (CW, 300K)
    (Ioffe Institute, Bell Labs)

    1974

    AlGaAs / GaAs DFB laser diode

    1976

    GaInAsP / InP DH laser diode at 1.2m


    (CW, 300K)
    (Lincoln Labs)

    1977

    InGaAsP / InP QW laser


    (Urbana University)

    1978

    AlGaAs / GaAs QW laser


    (Urbana University)

    1979

    InGaAsP / InP VCSEL


    (pulsed operation, 77K)
    (Tokyo Institute of Technology)

    Laser diodes:
    milestones

    1984

    InGaAs / AlGaAs strained QW laser

    1988

    AlGaAs / GaAs VCSEL


    (CW, 300K)
    (Tokyo Institute of Technology)

    1994

    InGaAs / AlInAs / InP Quantum Cascade Laser


    (pulsed operation, cryogenic temperatures)
    (Bell Labs)

    1995

    InGaN/AlGaN/GaN blue laser diode


    (pulsed operation, cryogenic temperatures)
    (Nichia Chemicals)

    1996

    InGaN/AlGaN/GaN blue laser diode


    (CW, 300K)
    (Nichia Chemicals)

    1998

    AlGaAs / GaAs Quantum Cascade Laser


    (pulsed operation, cryogenic temperatures)
    (Thomson-CSF)

    2002

    InGaAs / AlInAs / InP Quantum Cascade Laser


    (CW, 300K)
    (University of Neuchtel)

    J. Faist Quantum Electronics

    1962: GaAs homojunction laser

    GaAs p-n-junction
    doped with Te (n-type)
    and Zn (p-type)
    Polished facets
    Pulsed operation @ 77
    K
    Jth = 20000 A/cm2
    Quist, APL, 1, 91, 1962
    J. Faist Quantum Electronics

    1970: single-/double-heterostructure laser

    SH-structure provides econfinement only


    Holes are less mobile
    Reduce Ith to 11000 A/cm2
    DH-structure provides eand hole confinement
    Ith gets reduced to 2300 A/
    cm2
    Smaller active region area

    Panish, APL, 16, 326, 1970


    J. Faist Quantum Electronics

    1979: SQW laser

    QW structure thanks to
    MOCVD growth
    20 nm thickness
    Ith = 2600 A/cm2 (today
    10 x better !)
    No waveguide layers
    (QW guides optically)
    Quantization in QW
    Dupuis, APL, 34, 265, 1979
    J. Faist Quantum Electronics

    1986: Strained QWs

    Strained InGaAs/GaAs
    QW
    Optical waveguide
    (GRINSCH-structure)
    Ith now at 200 A/cm2
    >30 mW output power
    Low loss optical WG
    Fekete, APL, 49, 1659, 1986
    J. Faist Quantum Electronics

    Development of semiconductor lasers

    Development triggered
    by growth techniques
    1962: Bulk crystals
    1970: LPE thin layers
    1979: MOCVD/MBE
    QWs
    1985: strained layers by
    MOCVD

    J. Faist Quantum Electronics

    Separate confinement
    - More or less
    Gaussian mode
    - Strongly confined
    = 0.2m

    = 1.7%

    J. Faist Quantum Electronics

    Materials and processing

    Material choice: wavelength


    Growth technology
    Processing steps
    Cavity geometries: DFB, DBR, VCELS,

    J. Faist Quantum Electronics

    Molecular Beam Epitaxy

    J. Faist Quantum Electronics

    MBE growth reactor

    J. Faist Quantum Electronics

    FABRICATION STEPS FOR A SEMICONDUCTOR LASER

    1- SUBSTRATE

    4- FACETS CLEAVING

    2- EPITAXIE

    5- SINGLE CHIP
    PREPARATION

    3- LASER PROCESSING

    6- MOUNTING, BONDING

    J. Faist Quantum Electronics

    Semiconductor ridge laser


    CrAu
    AuGeNiAu
    Ridge laser
    Polymer BCB
    or different type
    of insulator

    Active region

    n-doped
    Substrat
    e

    AuGeNiAu

    J. Faist Quantum Electronics

    RIDGE LASER WITH POLYMER

    10 m

    J. Faist Quantum Electronics

    Laser characteristics
    Power
    Threshold current
    Slope efficiency

    Beam properties
    Far-field/near field
    Linewidth (Henry)

    Modulation, noise

    J. Faist Quantum Electronics

    Applications
    Telecommunications
    modulation, tunability

    Sensing
    wavelength, tunability

    Pumping of Solid-state lasers


    Power, efficiency

    Processing
    Power, wavelength, efficiency
    J. Faist Quantum Electronics

    Semiconductor lasers features

    J. Faist Quantum Electronics

    Optical Power

    J. Faist Quantum Electronics

    J. Faist Quantum Electronics

    Light vs current

    J. Faist Quantum Electronics

    Beam Profile
    Semiconductor lasers
    have wide divergence
    because of narrow emitter

    120 deg for the example!

    J. Faist Quantum Electronics

    Quantum Cascade Lasers

    J. Faist Quantum Electronics

    Material coverage

    J. Faist Quantum Electronics

    Interband vs intersubband
    intersubband:

    Interband:
    E

    k||
    k||

    Photon energy limited by gap


    2D joint density of state
    long lifetime (~1ns)

    flexibility in tailoring wavefunctions


    and energies
    atomic-like joint density of state
    short lifetime (~1ps)
    J. Faist Quantum Electronics

    Are these semiconductors transparent?

    J. Faist Quantum Electronics

    Intersubband absorption
    Terahertz

    Mid-Infrared
    1.5

    Absorbance

    10K

    1.0
    = 5meV

    0.5

    0
    120

    130

    140

    150

    160

    Photon energy (meV)

    Atomic - like transition


    = 3-300m

    J. Faist Quantum Electronics

    Needed for a laser:

    An optical transition
    Population inversion:
    need to engineer lifetimes
    up > dn

    long lifetime

    short lifetime

    Low loss optical resonator


    J. Faist Quantum Electronics

    Milestones: proposals
    1971: R. Kazarinov and R.
    Suris propose using
    intersubband transitions in a
    biased superlattice for light
    amplification
    R. F. Kazarinov, R.A. Suris, Sov. Phys. Semicond. 5, 707 (1971)

    1986-93: Proposals for QCs using


    resonant tunneling in superlattices:
    F. Capasso et al, JQE (1986)
    H. C. Liu et al, JAP (1988)

    J. Faist Quantum Electronics

    Quantum cascade laser


    1994: First intersubband laser (quantum cascade laser) is
    demonstrated in Bell Labs
    Tmax = 125K (pulsed), Pmax = 10mW, = 4.26m

    J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A.L. Hutchinson, A. Y. Cho, Science 264, 553 (1994)

    J. Faist Quantum Electronics

    Cascade

    Cascade:
    -1 electron may generate many photons
    J. Faist Quantum Electronics

    High temperature DFB-CW QC source

    Narrow gain 2Ph design


    Low active region doping
    Standard mounting
    Uncoated device

    Jth=1.29 kA/cm2
    Tmax cw of 400 K !!!
    A. Wittmann et al., unpublished
    J. Faist Quantum Electronics

    QCL Performances

    J. Faist Quantum Electronics

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