Question No.

Student Roll No.

Date

1,2

21 Nov 2014

3,4

21 Nov 2014

5,6

21 Nov 2014

7,8

21 Nov 2014

9,10

21 Nov 2014

11,12

26 Nov 2014

13,14

26 Nov 2014

15,16

26 Nov 2014

17,18

26 Nov 2014

10

19,20

26 Nov 2014

11

21,22

28 Nov 2014

12

23,24

28 Nov 2014

13

25,26

28 Nov 2014

14

27,28

28 Nov 2014

15

29,30

28 Nov 2014

The seminar is to be given using PowerPoint slides only.

The solution has to be explained using the subheadings : Given Data, Parameters to be calculated,
Formulae to be used, Constants Used and Calculations.
The calculations should include each and every step.
The students in each group have to be through with all slides, they cannot pre-decide who has to
present which portion of the question.
It is the responsibility of each group to verify the solution with me well before scheduled date of
presentation.

In a particular semiconductor material, the effective density of states functions are given by Nc =
Nco (T)3/2 and Nv = Nvo(T)3/2 where Nco and Nvo are constants independent of temperature. The
experimentally determined intrinsic carrier concentrations as a function of temperature are given
in Table 1 below. Determine the product NcoNvo and the band gap energy Eg. (Assume Eg is
independent of temperature.)
Table 1 Intrinsic concentration as a function of temperature

(a) If EC - EF = 0.25 eV in gallium arsenide at T = 400 K. calculate the values of no and po.
(b) Assuming the value of no from part (a) remains constant, determine EC - EF and po, at T =
300 K.
Consider a homogeneous gallium arsenide semiconductor at T = 300 K with Nd = 1016 cm-3, Na =
0.
(a) Calculate the thermal-equilibrium values of electron and hole concentrations.
(b) For an applied E-field of 10 V/cm. calculate the drift cum density.
(c) Repeat parts (a) and (b) if Nd = 0 and Na = 1016 cm-3
(a) A silicon semiconductor is in the shape of a rectangular bar with a cross-sectional area of
100m2, a length of 0.1 cm. and is doped with 5 x 1016 cm-3 arsenic atoms. The temperature is T
= 300 K. Determine the current if 5 V is applied across the length.
(b) Repeat part (a) if the length is reduced to 0.01 cm.
(c) Calculate the average drift velocity of electrons in parts (a) and (b)
An n-type silicon sample has a resistivity of 5-cm at T = 300 K.
(a) What is the donor impurity concentration?
(b) What is the expected resistivity at (i) T = 200 K and (ii) T = 400 K.
The total current in a semiconductor is constant and is composed of electron drift current and
hole diffusion current. The electron concentration is constant and is equal to 1016 cm-3. The hole
concentration is given by

where L = 12 m. The hole diffusion coefficient is Dp = 12 cm2/s and the electron mobility is n
= 1000 cm2/V-s. The total current density is J = 4.8 A/cm2. Calculate
(a) the hole diffusion current density versus x,

10

11

12

13

14

(b) the electron current density versus x, and

(c) the electric field versus x.
An abrupt silicon p-n junction at zero bias has dopant concentrations of Na = 1017 cm-3 and
Nd = 5 x 1015 cm-3. T = 300 K.
(a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi
level.
(b) Sketch the equilibrium energy band diagram for the junction and determine Vbi, from the
diagram and the results of part (a).
(c) Calculate Vbi and compare the results to part b).
(d) Determine xn, xp and the peak electric field for this junction.
Consider the uniformly doped GaAs junction at T = 300 K. At zero bias, only 20 percent of the
total space charge region is to be in the p region. The built-in potential barrier is Vbi = 1.20 V. For
zero bias, determine (a) Na. (h) Nd (c) xn (d) xp and (e) Emax
Consider the impurity doping profile shown in Figure below in a silicon p-n junction. For zero
applied voltage, (a) determine Vbi (b) calculate xn and xp. (c) Sketch the thermal equilibrium
energy band diagram, and (d) plot the electric field versus distance through the junction.

A particular type of junction is an n region adjacent to an intrinsic region. This junction can he
modelled as an n-type region to a lightly doped p-type region. Assume the doping concentrations
in silicon at T = 300K are Nd = 1016 cm-3 and Na= 1012 cm-3. For zero applied bias. Determine (a)
Vbi (b) xn. (c) xp and (d) Emax . Sketch the electric field versus distance through the junction.
An abrupt silicon p-n junction has dopant concentrations of Na = 2 x 1016 cm-3 and Nd = 2 x 1015
cm-3 at T = 300 K. Calculate (a) Vbi (h) W at VR = 0 and VR= 8 V, and (c) the maximum electric
field in the space charge region at VR = 0 and VR = 8 V.
An ideal one-sided silicon n+p junction has uniform doping on both sides of the abrupt junction.
The doping relation is Nd = 50Na . The built-in potential barrier is Vbi= 0.752V. The maximum
electric field in the junction is Emax = 1.14 x 105V/cm for a reverse-bias voltage of 10 V.
T = 300 K. Determine (a) Na , Nd (b) xp for VR, = 10, and (c) Cj for VR = 10.
The built-in potential barrier of a linearly graded silicon p-n junction at T = 300 K is Vbi; = 0.70
V .The junction capacitance measured at VR = 3.5 V is C' = 7.2 x 10-9 cm-3. Find the gradient, a,
of the net impurity concentration.
Consider a p-n silicon diode at T = 300 K with doping concentrations of Na = 1018 cm-3 and Nd =
1016 cm-3. The minority carrier hole diffusion coefficient is Dp = 12 cm2/s and the minority carrier
hole lifetime is p0 = 10-7s. The cross sectional area is A = 10-4 cm2. Calculate the reverse

15

saturation current and the diode current at a forward-bias voltage of 0.50 V.

A silicon pn junction with a cross-sectional area of 10-4 cm2 has the following properties at T =
300 K:

(a) Sketch the thermal equilibrium energy-band diagram of the pn junction, including the values
of the Fermi level with respect to the intrinsic level on each side of the junction.
(b) Calculate the reverse saturation current Is? and determine the forward bias current I at a
forward-bias voltage of 0.5 V.
(c) Determine the ratio of hole current to total current at the space charge edge xn .