Documente Academic
Documente Profesional
Documente Cultură
KEEE 2224
Lecture 8
Complementary Metal-OxideSemiconductor (CMOS)
Dr. Ghafour Amouzad Mahdiraji
November 2012
n-Channel MOSFETs
Enhancement-type MOSFET:
The device is OFF at zero gate voltage.
Depletion-type MOSFET:
The device is ON at zero gate voltage.
p-Channel MOSFET
VDD
Output = High
n
S
GND
Substrate
-------------
D
Gate
Substrate
n
GND
Substrate
Output = Low
n
S
GND
p
---------
p
D
Input
=
High
Output
Gate
Substrate
Input
=
Low
Gate
Input
Gate
+++++++++
VDD
CMOS Inverter
For small values of the input voltage, VIN, the nMOS transistor is switched off,
whereas the pMOS transistor is switched on and connects the output mode to VDD.
For large values of the input voltage, VIN, the pMOS transistor is switched off,
whereas the nMOS transistor is switched on and connects the output mode to GND
= 0V.
VDD
VDD
S
p channel
p channel
D
Input
Output
D
Input
Output
D
n channel
n channel
S
GND
Enhancement mode
S
GND
Depletion mode
Note that when the input voltage increase from 0V to 5V the output voltage decreases
from 5V to 0V.
In region 3 VOUT = 0V and ID = 0.
In region 1 VOUT = VDD and ID = 0.
In region 2 the transistor remains only
for a short period of time, when the
input voltage switches between VL
and VH.
In this region there is non-zero current
flowing between VDD and GND, and
some power dissipation, which is
converted into heat.
Note that the same current flows
through the pMOS and nMOS
transistors, that is, IDp = IDn.
The fact that in regions 1 and 3 NO
current flows between VDD and GND,
is very attractive because there is no
power dissipation at this stages. This
very fact is the reason that all digital
circuitry is now build in the CMOS
technology.