FDS6298

tm

30V N-Channel Fast Switching PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.

Low gate charge (10nC @ VGS=5V)

Applications

Very low Miller Charge (3nC)

13 A, 30 V.

RDS(ON) = 9 m @ VGS = 10 V
RDS(ON) = 12 m @ VGS = 4.5 V

Control Switch for DC-DC Buck converters

Low Rg (1 Ohm)

Notebook Vcore

ROHS Compliant

Telecom / Networking Point of Load

DD

DD

DD
DD

G
SS G
S
SS S

SO-8
Pin 1 SO-8

Absolute Maximum Ratings

Symbol

TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

Parameter

30

VGSS

Gate-Source Voltage

20

Drain Current

ID

Continuous

(Note 1a)

Pulsed

13
50

Power Dissipation for Single Operation

(Note 1a)

3.0

Power Dissipation for Single Operation

(Note 1b)

1.2

EAS

Single Pulse Avalanche Energy

(Note 3)

181

mJ

TJ, TSTG

Operating and Storage Junction Temperature Range

55 to +150

PD

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

C/W

RJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

125

C/W

RJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6298

FDS6298

13

12mm

2500 units

2007 Fairchild Semiconductor Corporation

FDS6298 Rev. C1 ( W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

April 2007

Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min Typ

Max

Units

Off Characteristics
BVDSS
BVDSS
TJ
IDSS

DrainSource Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current

IGSS

GateBody Leakage

On Characteristics

VGS = 0 V, ID = 250 A

30

ID = 250 A, Referenced to 25C

30

mV/C

VDS = 24 V, VGS = 0 V

VGS = 20 V, VDS = 0 V

100

nA

VDS = VGS, ID = 250 A

1.7

ID = 250 A, Referenced to 25C

mV/C

(Note 2)

VGS(th)
VGS(th)
TJ

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

RDS(ON)

Static DrainSource
OnResistance

VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VGS= 10 V, ID = 13 A, TJ=125C

7.4
9.4
11

9
12
15

gFS

Forward Transconductance

VDS = 10 V, ID = 13 A

58

1108

pF

310

pF

109

pF

0.3

1.7

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz

Switching Characteristics
td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

(Note 2)

VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6

11

20

ns

10

ns
ns

td(off)

TurnOff Delay Time

27

43

tf

TurnOff Fall Time

14

ns

Qg

Total Gate Charge

10

14

nC

Qgs

GateSource Charge

nC

Qgd

GateDrain Charge

nC

0.74

1.2

VDS = 15 V, ID = 13 A,
VGS = 5 V

DrainSource Diode Characteristics

trr

DrainSource Diode Forward

Voltage
Diode Reverse Recovery Time

Qrr

Diode Reverse Recovery Charge

VSD

VGS = 0 V, IS = 2.1 A

(Note 2)

IF = 13 A, dIF/dt = 100 A/s

27

ns

13

nC

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user'
s board design.

a)

50C/W when mounted

2
on a 1in pad of 2 oz
copper

b) 125C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Test: Pulse Width < 300s, Duty Cycle < 2.0%

3. Starting TJ = 25C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V

FDS6298 Rev. C1 (W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Electrical Characteristics

2.6
VGS = 10V

ID, DRAIN CURRENT (A)

70

4.5V

4.0V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

80

6.0V

60

3.5.V

50
40
30

3.0V

20
10

2.4

VGS = 3.0V

2.2
2
1.8

3.5V

1.6

4.0V

1.4

4.5V

0.5

1.5

2.5

10

20

10V

30

40

50

60

70

80

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.
0.028

1.8

ID = 13A
VGS = 10V

1.6

ID = 6.5A
RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

6.0V

1
0.8

1.4
1.2
1
0.8
0.6
-50

-25

25

50

75

100

125

0.024
0.02
0.016

TA = 125oC
0.012
0.008

TA = 25oC

0.004

150

TJ, JUNCTION TEMPERATURE ( C)

10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.
100

80
25oC

TA = -55oC

60

IS, REVERSE DRAIN CURRENT (A)

VDS = 5V

70
ID, DRAIN CURRENT (A)

5.0V

1.2

125o
C

50
40
30
20
10

VGS = 0V

10

TA = 125oC

25oC

0.1

-55oC
0.01
0.001
0.0001

0
1.5

2.5

3.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6298 Rev. C1 (W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics

1500
ID = 13A

VDS = 10V

1200
20V

900

600
COSS
300

CRSS

0
0

12

16

20

Qg, GATE CHARGE (nC)

10

15

20

25

30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

100

RDS(ON) LIMIT

10

100s
IAS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

f = 1MHz
VGS = 0 V

CISS

15V
CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

10

1ms
10ms
100ms
1s
10s
DC

VGS = 10V
SINGLE PULSE
RJA = 125oC/W

0.1

TA = 25 C
0.01
0.01

0.1

10

10
25
125

1
0.01

100

0.1

VDS, DRAIN-SOURCE VOLTAGE (V)

10

100

1000

tAV, TIME IN AVALANCHE (mS)

Figure 9. Maximum Safe Operating Area.

Figure 10. Unclamped Inductive Switching

Capability

P(pk), PEAK TRANSIENT POWER (W)

50
SINGLE PULSE
R JA = 125C/W
TA = 25C

40

30

20

10

0
0.001

0.01

0.1

t1, TIME (sec)

10

100

Figure 11. Single Pulse Maximum Power Dissipation.

FDS6298 Rev. C1 (W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1
D = 0.5

RJA(t) = r(t) * RJA

RJA = 125 C/W

0.2

0.1

0.1
0.05

P(pk)

0.02

0.01

t1

0.01

t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 12. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6298 Rev. C1 (W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve
design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I26

2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com