Documente Academic
Documente Profesional
Documente Cultură
HBD853/D
Rev. 3, Sept.-2007
SCILLC, 2007
Previous Edition E 2004
All Rights Reserved
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For additional information on Power Factor Correction, contact the Technical Information Center at
800-282-9855 or www.onsemi.com/tech-support.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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2
HBD853/D
FOREWORD
Designing power supplies in a global energy efficiency context
Designing power supplies has always been a challenging task. But just as many of the traditional
problems have been solved, emerging regulatory standards governing efficiency levels are about to start
the cycle over again.
The first phase of this cycle is already underway and is focused on improving standby power
consumption levels (passive mode). The next phase will tackle the tougher problem of improving active
mode efficiency levels. Government agencies around the world, driven by the US Environmental
Protection Agency (EPA) and its ENERGY STAR program and by the China Certification Center
Standard, are announcing new performance standards for active mode efficiency for power supplies.
The standards are aggressive and it will take the joint efforts of manufacturers and their suppliers
(including semiconductor suppliers) to provide solutions that meet the new challenges.
Amidst these trends, power factor correction (PFC) or harmonic reduction requirements as mandated
by IEC 61000-3-2 stands out as the biggest inflection point in power supply architectures in recent years.
With increasing power levels for all equipment and widening applicability of the harmonic reduction
standards, more and more power supply designs are incorporating PFC capability. Designers are faced
with the difficult tasks of incorporating the appropriate PFC stage while meeting the other regulatory
requirements such as standby power reduction, active mode efficiency and EMI limits.
ON Semiconductor is committed to providing optimal solutions for any given power supply
requirement. Our commitment is reflected in providing design guidance in choosing between many
options for topology and components. In this handbook we have attempted to provide a detailed
comparison between various options for PFC implementation while keeping it in the context of total
system requirements. As new technologies and components are developed, the balance of choice may
shift from one approach to the other, but the methodology used in this handbook will remain applicable
and provide a means for the power supply designer to arrive at the best choice for a given application.
We at ON Semiconductor sincerely hope this book will help you to design efficient, economical PFC
circuits for your products. Please see our Web site, www.onsemi.com, for up-to-date information on this
subject.
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Table of Contents
PREFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
CHAPTER 1Overview of Power Factor Correction Approaches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Types of Power Factor Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Passive Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Critical Conduction Mode Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Continuous Conduction Mode Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Average Current Mode Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
23
24
26
26
28
30
34
35
40
46
46
49
50
REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
APPENDIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
ADDITIONAL DOCUMENTATION
AND8182
AND8185
AND8209
AND8124
TND307
TND308
AND8282
AND8281
AND8084
AND8123
AND8207
AND8179
AND8292
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Preface
Choices for the power factor correction solutions range from passive circuits to a variety of active circuits. Depending on
the power level and other specifics of the application, the appropriate solution will differ. The advances in the discrete
semiconductors in recent years, coupled with availability of lower priced control ICs, have made the active PFC solutions more
appropriate in a wider range of applications. When evaluating the PFC solutions, it is important to evaluate them in the context
of full system implementation cost and performance.
In this handbook, a number of different PFC approaches are evaluated for a 120 W (12 V, 10 A) application. By providing
step-by-step design guidelines and system level comparisons, it is hoped that this effort will help the power electronics
designers select the right approach for their application.
Chapter 1 provides a comprehensive overview of PFC circuits and details of operation and design considerations for
commonly used PFC circuits.
Chapter 2 describes the methodology used for comparing different active PFC approaches for a given application (12 V, 10 A
output). It also introduces the proposed approaches.
Chapter 3 contains the design guidelines, discussion and salient operational results for the two variations of the critical
conduction mode topologies (constant output and follower boost versions).
Chapter 4 contains the design guidelines, discussion and salient operational results for the two continuous conduction mode
topologies (traditional CCM boost and CCM isolated flyback).
Chapter 5 provides a detailed analysis of the results obtained from the four different implementations for the same
applications. Comparative analyses and rankings are provided for the topologies for given criteria. It also includes guidelines
for the designers based on the results described in the previous chapters.
Chapter 6 provides recommendations to meet FCC limits on line conducted EMI for the topologies presented in the previous
chapters.
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CHAPTER 1
Overview of Power Factor Correction Approaches
ABSTRACT
Definition
RealPower
ApparentPower
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100%
80%
60%
40%
20%
0%
1
11
13
15
17
19
21
Harmonic Number
Figure 2. Harmonic Content of the Current Waveform in Figure 1
80%
60%
40%
20%
0%
1
11
13
15
17
19
21
Harmonic Number
Figure 3. Input Characteristics of a Power Supply with Near-Perfect PFC
Power Factor Correction vs. Harmonic Reduction
Then:
PF +
1 )
1 )
THD(%)
100
Kd12 * 1
THD(%)
100
PF + Kd * Kq + Kd
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Waveforms:
Figure 4. Input Characteristics of PC Power Supplies with Different PFC Types (None, Passive, and Active)
Input Line Harmonics Compared to EN1000-3-2
1.000
EN61000-3-2 Limit
Unit A, Without PFC
0.100
0.010
0.001
3
13
23
33
Harmonic Number
Figure 5. Input Harmonics of Three PC Power Supplies Relative to EN1000-3-2 Limits
Passive PFC
left half of the rectifier bridge are used, placing the circuit in
the half-wave doubler mode. As in the case of the full-wave
rectifier with 230 Vac input, this produces 325 Vdc at the
output of the rectifier. This 325 Vdc bus is of course
unregulated and moves up and down with the input line
voltage.
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Inrush Current
Limiter
(Thermistor)
0.01
0.0047
PFC Inductor
+
230 Vac
0.1
0.022
470
325 Vdc to
Forward
Converter
0.22
115 Vac
1M
Differential
Mode
Inductor
(L2)
Common
Mode
Inductor
(L3)
0.022
470
0.0047
Output
Vin
+
2.5 V
Error
Amp
Zero
Current
RDC1
Rac1
Cout
Current
Shaping
Network
Reference
Multiplier
Control
Logic
Out
RDC2
AC Input
Rshunt
Rac2
Out Gnd
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Vref
Iinductor
Iavg
Vin(t)
ton
L
k Vin
Iinductor
Vin(t)
t
L on
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L
Output
Rect ac
Current
Sense
Zero Current
Detection
C
Vcontrol
S
Ioc Vo2
Out Rtn
Programmable
One-Shot
R
PWM
Rshunt
C
T
Rect -
Vout
Vac
Follower Boost
Vrms2 Control
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IIN
VIN
Load
PWM
Control
Ac in
Vi
KIN
IIN
Mult.
KM
VDIV
VSIN
Div.
KD
E/A
VERR
+
VREF
Kf
Square
KS
Kf VIN
KS Kf2 VIN2
Cf
Vi + VDIVKMVSIN +
VERRKMVSIN
KDKSKf2VIN2
Output
L
Vs
Oscillator
Vin
Vca
Cout
+
PWM
Rshunt
-
Out Gnd
Rcp
Icp
+
Current
Amplifier
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Vin
Rect -
FB/SD
Loop
Comp
4V
1.08 Vref
Output
DS
Error
Amp
+
Overshoot
Comparator
RDC1
Rac1
Reference
Multiplier
R7
Current
Shaping
Network
AC Input
Oscillator
C7
Rac2
Cout
Control
Logic
Out
Q1
RDC2
+
Current
Sense
Amplifier
Out Gnd
Rshunt
-
IS
-
Rect -
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Cac
Rac2
Rac1
C4
Rect ac
15
C3
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25 k
Vline
4.5 V
Reference
Multiplier
Average Current
Compensation
Gnd
15
R3
AC Comp
3
AC Ref
4
AC Input
5
k S Iin
13
Ramp
Comp
R13
CT
14 CT
Oscillator
Ramp
Compensation
PWM
Verror(ac)
4V
Rect ac
Logic
R10
Iavg 10
C11
Iavgfltr 11
60 k
20 k
16 k
+ k S Iin
line
AC
Reference
Buffer
V-I
0.75 Vline + k
S Iin = Vref
AC Error
Amp V
+
error(ac)
+
12
IS-
16
Out
Rshunt
Rect -
Q1
Cout
RDC2
to
FB
RDC1
Ramp
Comp
Current
Sense
Combined
Waveform
AC Input
Vref
Vline
OSC
k Iin
Vref
Vline + k Iin
Verror(ac)
GND
4 V ref
Verror(ac)
Verror(buffer)
GND
OTHER FEATURES
Transient Response
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level, the output will transition into a high gain mode and
quickly adjust the regulation loop until it is close to being in
balance. At that point, the amplifier will return to its normal
gain and finish bringing the output voltage to its nominal
value.
Figure 18 shows the operation of the voltage loop error
amplifier. During a load dump, the output voltage of the PFC
unit would go high as the loop tried to respond to the new
control conditions. As the feedback voltage increases from
its nominal voltage of 4.0 V, the output current of the
4.24 V
4.24 V
4.20 V
250 mA
+
4.00 V
FB/SD
6
4.00 V
3.80 V
20 mA max
3.68 V
Error
Amp
250 mA
+
3.68 V
250 mA
Source
20 mA
-20 mA
Sink
-250 mA
Output Current
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INPUT A
V to I
CONVERTER
Overshoot Protection
INPUT P
RAMP
+
-
Inverting Input
OUTPUT
NI Input
Shutdown
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To VCC
VO
VIN
ACIN
STARTUP
Secondary FB
and Protection
NCP1651
OUT
VCC GND CT FB IS+
CONCLUSION
The number of choices available to the PFC designer has
grown significantly over the past few years, even over the
past few months. This is due to the increased interest in
complying with EN61000-3-2 and its derivatives, coupled
with an enthusiastic spirit of competition among the
semiconductor suppliers. The end users reap increasing
benefits as PFC becomes better and more cost effective.
Designers benefit from the increasing capability of these IC
controllers, with more options available to execute the
designs.
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CHAPTER 2
Methodology for Comparison of Active PFC Approaches
There are many different driving factors for designing
PFC circuits as outlined in Chapter 1. Depending on end
applications requirements and the prominent driving
factors, the choice of a PFC circuit will vary. Until very
recently, only one or two topologies have been widely
utilized for PFC implementations. For higher power
circuits, the traditional topology of choice is the boost
converter operating in continuous conduction mode (CCM)
and with average current mode control (ACMC). For lower
power applications, typically the critical conduction mode
(CRM) boost topology is utilized. As the range of circuits
and applications incorporating PFC has expanded, the need
for more diversified PFC solutions has grown. Many of the
emerging solutions use variations of the established
topologies, while some truly novel techniques have also
emerged.
It is often difficult to provide an instantaneous answer to
the question: Which approach is the most suitable for a
given application or power range? The answer depends in
part on the design priorities and various trade-offs.
However, the other part of the answer lies in benchmarking
of different approaches for a given application. In this
handbook, results of such a benchmarking effort have been
presented with detailed analysis.
The choice of a correct application is critical in carrying
out such a benchmarking study. It is commonly accepted that
at power levels below 100 W, the CRM approach is more
appropriate, while for power levels above 200 W, the CCM
approach is admittedly sensible. The power range of
100-200 W represents the gray area where either approach
could be used. As a result, it is most pertinent to evaluate the
performance of different approaches somewhere within this
power range. A 150 W (input) power level was chosen as a
target application. Also, since most applications are required
to operate over universal input voltage (85-265 Vac,
50/60 Hz), that was chosen as the input voltage range. In
85-265 V
50/60 Hz
AC Input
F1
EMI filter for
var. freq.
ripple
P1
PFC Boost
Front-end using
MC33260
400 V
DC out
D1
Step-down Isolated
DC-DC Converter
(200 kHz)
12 V, 10 A
DC out
Figure 21. Critical Conduction Mode PFC with Fixed Output Voltage
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85-265 V
50/60 Hz
AC Input
F2
EMI filter for
var. freq.
ripple
P2
PFC Boost
Front-end using
MC33260
200-400 V
DC out
D2
Step-down Isolated
DC-DC Converter
(200 kHz)
12 V, 10 A
DC out
Figure 22. Critical Conduction Mode PFC with Variable Output Voltage
F3
EMI filter for
fixed freq.
ripple
P3
PFC Boost
Front-end using
NCP1650 (100 kHz)
400 V
DC out
D3
Step-down Isolated
DC-DC Converter
(200 kHz)
12 V, 10 A
DC out
Figure 23. Continuous Conduction Mode PFC with Fixed Output Voltage
F4
EMI filter for
fixed freq.
ripple
P4 (+D4)
Single Stage Flyback PFC &
Isolated DC-DC Converter
using NCP1651 (100 kHz)
12 V, 10 A
DC out
2.2Test Methodology
All the above PFC approaches (P1-P4) were designed,
built and characterized. Each converter went through minor
modifications in order to achieve local optimization without
making major component changes. It is recognized that each
approach can be optimized further through a more
aggressive design and selection of components. However,
the focus of this work was to compare the different
approaches and the design approach for all the circuits was
very similar. Each PFC circuit was tested for the following
parameters:
Power
Analyzer
Pin, Vin, Iin
PF, THD
Out+
Sense+
AC Line
AC Source
0-270 Vac
1 kW
Unit
Under
Test
V
SenseOut-
Load
the UUT and the load, the voltage drop varying with the
amount of current flowing.
The load current is measured using a 5.0 mW shunt
resistor. The voltage drop across the shunt resistor is
measured and the load current can be calculated based on the
shunt resistance value.
Test Methodology
2.4
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CHAPTER 3
Critical Conduction Mode (CRM) PFC and DC-DC Stage
PFC Converter Modes
385
CT = 470 pF
335
285
CT = 150 pF
235
185
CT = 330 pF
135
85
85
CT = 220 pF
115
145
175
205
235
265
4KoscLpPin max I2
regL
Vin2 min
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50 W
380
75 W
340
300
100 W
260
220
Iinpk +
150 W
Icoil_pk + 2Iinpk
180
CT =560 pF
140
85
2 P
out
hVin min
115
145
175
205
235
Lp +
265
2Ttotal
VoutIcoil_pk
Lp +
2Ttotal
Vin min
Vout
2 Vin min
VoutIcoil_pk
Vin min
Vout
2 Vin min
Power Switch
h > 90%
tholdup = 20 ms
Selection Process
IQ +
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2 Vin min
16 49pVout
Icoil_pk
Output Rectifier
Current Sense
Energy + PowerxTime
wherepower + 150W(outputpower)
and time + 20ms(hold * uptime)
PCS + 1 RCSIcoil_pk2
6
RCSIcoil_pk
IOCP
2DU
23
+
4002 * 2802
Vout2 * Vout min 2
+ 74mF for theTraditionalBoost
Cout +
23
2DU
+
2002 * 1502
Vout2 * Vout min 2
+ 342mF for theFollowerBoost
Cout +
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Vcc
Gnd
AC Line
F1
L1
C1
C7
100nF
C4
10uF
100nF
D3
D2
Lp
600uH
*200uH
C2
470nF
D4
C9
D1
D5
C8
Vout
MUR460E
1nF
1
2
3
4
Rocp
MC33260
1nF
Cout
220uF
*330uF
Q1
8
7
6
5
R3
Gnd
IRFB11N50A
47
25k
Rcs
C3
0.7
1nF
C6
D6
CT
10nF
220nF
*560pF
1N4934
R5
R6
R13
1M
1M
25k
*0
Results
Traditional Boost
Follower Boost
PO (W)
150
150
Lp (mH)
607
200
CO (mF)
220
330
RCS (W)
0.7
0.7
ROCP (kW)
20
20
CT (pF)
10000
560
85
115
175
265
Efficiency (%)
87.8
91.6
94.3
96.2
THD (%)
8.87
11.04
14.8
17.6
PF (%)
99.49
99.32
98.83
97.61
Vout (V)
401.5
408.3
414.6
418
Vin (Vac)
Vin (Vac)
85
115
175
265
Efficiency (%)
89.5
92.5
93.7
95.9
THD (%)
5.95
6.21
10.87
21
PF (%)
99.76
99.75
99.25
97.37
Vout (V)
203
276
391
400.7
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98
Vin = 265 V
94
Vin = 175 V
92
90
Vin = 265 V
96
EFFICIENCY (%)
EFFICIENCY (%)
96
94
Vin = 175 V
92
90
Vin = 85 V
88
Vin = 85 V
88
75
100
125
150
75
100
125
150
Figure 29. Efficiency vs. Output Power for Follower and Traditional Boost
35
30
Vin = 265 V
25
20
Vin = 175 V
15
10
Vin = 85 V
5
0
75
100
125
150
35
30
Vin = 265 V
25
20
Vin = 175 V
15
Vin = 85 V
10
5
0
75
100
125
150
Figure 30. Total Harmonic Distortion vs. Output Power for Follower and Traditional Boost
every odd harmonic up to the 9th. At high line (265 Vac), the
THD level is much higher than at low line (85 Vac) in both
preregulators due to the higher switching frequency.
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100
100
99
Vin = 85 V
98
Vin = 175 V
97
96
95
99
Vin = 85 V
98
Vin = 175 V
97
96
95
Vin = 265 V
Vin = 265 V
94
94
75
100
125
150
75
100
125
150
Figure 31. Power Factor vs. Output Power for Follower and Traditional Boost
Transformer
Power Switch
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Power Diode
VR w Vin max Ns
Np
D1 MC33260
2-Switch Forward
D2 MC33260
2-Switch Forward
D3 NCP1650
2-Switch Forward
Transformer
Ratio:
10:1
0.629 in2
0.257 in3
Ratio:
5:1
1.44 in2
0.68 in3
Ratio:
10:1
0.629 in2
0.257 in3
Power Switch
600 V
3.0 RDS(on)
TO220
0.077 in2
0.067 in3
500 V
0.95 RDS(on)
TO220
0.077 in2
0.067 in3
600 V
3.0 RDS(on)
TO220
0.077 in2
0.067 in3
Inductor
26 mH
10.6 Apk
1.00 in2
0.507 in3
26 mH
10.83 Apk
1.00 in2
0.507 in3
26 mH
10.6 Apk
1.00 in2
0.507 in3
Power Diode
Schottky
60 V, 15 A
VF = 0.62 V
TO220
0.077 in2
0.067 in3
Ultrafast
100 V,10 A
VF = 0.80 V
TO220
0.077 in2
0.067 in3
Schottky
60 V, 15 A
VF = 0.62 V
TO220
0.077 in2
0.067 in3
Output Capacitor(s)
220 mF, 16 V
0.26 Apk
0.19 in2
0.85 in3
220 mF, 16 V
0.45 Apk
0.19 in2
0.85 in3
220 mF, 16 V
0.26 Apk
0.19 in2
0.85 in3
Frequency Range
200 kHz
Fixed
200 kHz
Fixed
200 kHz
Fixed
Control
I-mode
I-mode
I-mode
in3
in3
1.75 in3
Total Volume
1.75
2.17
D1
MC33260
D2 MC33260Follower
Boost
D3
NCP1650
*Cost ($)
3.24
4.10
3.24
Efficiency @
Low Line (%)
90.2
89.3
90.2
Power
Density
(W/in3)
68.57
55.29
68.57
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CHAPTER 4
Continuous Conduction Mode (CCM) PFC
Maximum operating line voltage: Vinmax = 265 Vac
L+
2 Vin
Vin2 min T
min
1Vout
2I%Pout max h
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2000
L, INDUCTANCE VALUE (mH)
1800
1600
Recommended area
of operation
1400
1200
1000
800
600
400
200
0
0
10
20
30
40
50
60
70
Power Switch
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3.50
3.00
CURRENT (A)
2.50
2.00
1.50
1.00
0.50
0
0
45
90
135
180
DEGREES
2 Pin I% 2 Pin
)
2
Vin
Vin
The highest peak current will occur at low line and full load.
In order to minimize switching and conduction losses,
keep in mind to select a MOSFET with low gate charge, low
capacitance and low RDS(on). This design utilizes an
IRFB11N50A MOSFET from International Rectifier. This
particular MOSFET was chosen for its low RDS(on) of
0.52 W, 500 V drain to source voltage, and 11 A drain
current rating. Its total gate charge of 52 nC and low input
capacitance of 1423 pF helped in reducing switching losses.
Output Capacitor
Output Rectifier
Cout +
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2Poutthold
Vout2 * Vout2 min
2
32 2 Pin2
* Vout
Rload
9pVinVout
DC-DC Converter
CHOKE CM
D2
Cin
F1
D3
D4
AUX
Dout
Cout
Vcc
FB
Rac1
FB/SD
Q1
Rdc1
to FB
Output
Out
AC in
Rdc2
NCP1650
Rshunt
AC ref
Cac
AC Comp
R3
R13
C3
Iavgfltr
Gnd
Is-
Iavg
C4
Ct
Rac2
Ramp Comp
AC
Input
D1
R10
Ct
C11
1.000
Vin (Vac)
85
115
230
265
Pin (W)
173
166
159.8
158.6
Iline (rms)
2.04
1.44
0.69
0.597
Vout (V)
404.2
404.6
404.7
404.8
Iout (A)
0.375
0.374
0.371
0.371
Efficiency (%)
87.6
91.2
94.0
94.7
PF (%)
99.76
99.78
99.77
99.6
THD (%)
4.67
4.19
5.51
6.32
Vin = 85 V
0.988
0.984
0.980
70
90
110
130
150
0.96
Vin = 265 V
0.94
Vin = 175 V
0.90
0.88
EFFICIENCY (%)
Vin = 175 V
0.992
Vin = 265 V
0.92
0.996
Vin = 85 V
0.86
0.84
0.82
0.80
70
90
110
130
150
12
10
Vin = 265 V
8.0
6.0
Vin = 85 V
4.0
Vin = 175 V
2.0
0
70
90
110
130
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150
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500
250
Max. recommended MOSFET VDS
200
400
150
300
Max. recommended diode VR
100
200
50
100
600
0
2
10
11
12
Figure 38. VDS and VR vs. Transformer Turns Ratio (12 V Output)
where
Lp(leakage)
Cp ) Coss
Np
is the primary to secondary turns ratio, Ip is the
Ns
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2 PinT
2 2 Vin min ton
)
Vin min ton
Lp
Pd + VFIF(1-D)withIF +
Secondary
Current
Primary
Current
Ipk
Di
Np
I
Ns ped
Iped
ton
(Ipk ) Iped) Np
2
Ns
ts
T
Output Rectifier
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Input
1
2
F1
C29
R8
CHOKE CM
U4
C8
C26
C9
D4
D3
D2
R9
C10
2
AC Comp
AC ref
AC in
FB/SD
16
18
R4
C3
R7
12
D16
C6
Is+
Out
Vref
AUX
NCP1651
C16
D7
C12
R1
D6
Q2
R34B C25
R10
T1
C22
D5
C21
D8
C24
R22
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R28
R26
- +
R31
R25
R24
R6
R23
C5
R33
D13
AUX
+ -
C11
R11
11
10
R2
C27
Startup
Ramp
D1
Ct
L2
Vcc
Iavg
J1
Gnd
39
Ifltr
+ -
Figure 40. Simplified NCP1651 One Stage Flyback Power Factor Converter Schematic
R27
C17
C19
C4
D9
D10
R21
U2
U4
C28
R20
1
2
Output
1.05
III.NCP1651 Results
The measurements on the NCP1651 board were
performed and the following results were observed.
85
115
230
265
Pin (W)
153.8
146
140.1
140.3
Iline(rms)
1.80
1.27
0.63
0.56
Vout (V)
11.72
11.78
11.77
11.78
Vin = 85 V
1.00
Vin = 175 V
0.95
0.90
0.85
Vin = 265 V
0.80
0.75
0.70
Iout (A)
10
10
10
10
Efficiency (%)
76.2
80.7
84.0
84.0
0.65
PF (%)
99.79
99.86
96.70
93.87
THD (%)
4.76
4.29
6.4
7.9
0.60
25
EFFICIENCY (%)
Vin = 265 V
Vin = 175 V
0.75
Vin = 85 V
50
75
100
125
0.90
0.70
25
100
0.95
0.80
75
0.85
50
20
18
16
Vin = 265 V
14
12
10
Vin = 175 V
8
6
4
2
0
25
Vin = 85 V
50
75
100
125
125
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CHAPTER 5
Detailed Analysis and Results of the Four Approaches
PFC Preregulator Stage
P1- MC33260
CRM Boost
P2- MC33260
CRM Follower Boost
P3- NCP1650
CCM Boost
P4- NCP1651
CCM Flyback
Inductor
607 mH
5.54 Apk
1.76 in2
2.97 in3
200 mH
5.54 Apk
1.25 in2
1.57 in3
800 mH
3.4 Apk
1.17 in2
1.64 in3
800 mH pri,
6.6 Apk
10 mH sec, 7:1,
3.80 in2
8.68 in3
Output Capacitor(s)
31,360 mF, 16 V
21 Apk
1.14 in2
1.60 in3
Power Switch
500 V
0.52 W RDS(on)
TO220
0.077 in2
0.067 in3
500 V
0.52 W RDS(on)
TO220
0.077 in2
0.067 in3
500 V
0.52 W RDS(on)
TO220
0.077 in2
0.067 in3
800 V
0.45 W RDS(on)
TO220
0.077 in2
0.067 in3
Power Diode
Ultrafast
600 V, 4.0 A
VF = 1.28 V
Axial Lead
0.034 in2
0.017 in3
Ultrafast
600 V, 4.0 A
VF = 1.28 V
Axial Lead
0.034 in2
0.017 in3
Ultrafast
600 V, 8.0 A
VF = 2.5 V
TO220
0.077 in2
0.067 in3
Schottky
80 V, 10 A
VF = 0.95 V
TO220
0.077 in2
0.067 in3
Frequency Range
25-476 kHz
43-476 kHz
100 kHz
Fixed
100 kHz
Fixed
RCD Clamp
N/A
N/A
N/A
13 kW, 6.0 W
0.01 mF, 1.0 kV ceramic
1.5KE250+1.5KE100
0.53 in2
0.88 in3
TVS
N/A
N/A
N/A
MUR460
.06 in2
.0094 in3
Control
V-mode
V-mode
I-mode
I-mode
in3
in3
in3
Total Volume
4.39
3.70
2.59
*11.30 in3
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Inductor/Transformer
Output Capacitor
Power Switch
Attribute
F1+P1
MC33260
CRM Boost
F2+P2
MC33260
CRM
Follower
Boost
F3+P3
NCP1650
CCM Boost
*Cost ($)
7.20
7.75
6.44
THD @
265 Vac (%)
17.6
21
6.26
Efficiency @
85 Vac (%)
88
89.5
87
Power Density
(W/in3)
34.16
40.54
57.91
Hold-up
Capability (ms)
20
20
20
Power Diode
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35
30
P2-CRM follower
25
20
P1-CRM boost
15
10
P3-CCM boost
5
0
75
92
EFFICIENCY (%)
125
150
P2-CRM follower
91
90
100
P1-CRM boost
89
88
P3-CCM boost
87
86
75
100
125
150
F1+P1+D1
MC33260
CRM Boost
F2+P2+D2
MC33260CRM Follower Boost
F3+P3+D3
NCP1650
CCM Boost
F4+P4
NCP1651
CCM Flyback
10.44
11.85
9.68
10.54
17.6
21
6.26
4.76
79.19
79.92
79.01
76.20
82.62
82.60
82.26
80.7
19.54
20.44
27.64
10.61
*Cost is for budgetary purpose only and is based on 1,000 units. Actual production costs may vary significantly.
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Lp (mH)
Cout (mF)
VDS
IDSpk
Rcs (W)
Rocp (kW)
CT (nF)
100
910
49
500
3.70
0.7
12.6
7.15
150
606
73.5
500
5.54
0.7
18.9
7.15
200
455
98
500
7.39
0.7
25.2
7.15
250
364
123
500
9.24
0.7
31.5
7.15
400
227
196
500
14.78
0.7
50.5
7.15
Lp (mH)
Cout (mF)
VDS (V)
IDSpk (A)
Rcs (W)
Rocp (kW)
CT (nF)
100
519
229
500
3.70
0.7
12.6
1.01
150
346
343
500
5.54
0.7
18.9
1.01
200
259
457
500
7.39
0.7
25.2
1.01
250
208
571
500
9.24
0.7
31.6
1.01
400
130
914
500
14.78
0.7
50.5
1.01
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Dout
Pout (W)
Lp (mH)
Cout (mF)
VDS (V)
IDSpk (A)
VR (V)
IFpk (A)
100
1260
49
500
2.18
400
1.85
150
840
74
500
3.27
400
2.77
200
630
98
500
4.36
400
3.7
250
505
123
500
5.45
400
4.62
400
320
196
500
8.71
400
7.39
600
210
294
500
13.09
400
11.09
800
160
392
500
17.41
400
14.79
1000
125
490
500
21.85
400
18.48
Table 14. Trend Chart for the Single Stage Flyback - NCP1651
One Stage Flyback NCP1651
T1
Cout
MOSFET
Iripple (A)
Cout (mF)
(Note 2)
VDS (V)
(Note 3)
9.0
19.8
31,360
800
5.0
22.0
800
3.0
22.8
Pout (W)
Lp (mH)
(Note 1)
Np/Ns
100
800
150
200
Dout
IDSpk (A)
VR (V)
(Note 3)
IFpk (A)
800
4.75
80
42.7
31,360
800
9.62
100
48.1
31,360
800
18.22
150
54.6
1. Changing the primary inductance value does not greatly affect the design parameters therefore a value of 800 mH was used throughout. A
higher inductance value would help lower the MOSFET peak current however a very large amount of inductance is needed to lower the ripple
current by only a few mA. Additional cost spent on the magnetics is not worth the slightly improvement in current ripple.
2. Cout value is the amount of capacitance necessary to meet the "10% output voltage ripple requirement and the capacitor ripple current.
If low capacitance value with high ripple current rating capacitor were available, smaller capacitor could have been used.
3. Values indicated are actual electrical ratings of the device recommended for the design.
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CHAPTER 6
EMI Considerations
Background
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Coilcraft
BU10-6003R0B
0.22 mF
AC
Input
0.22 mF
To
PFC
Circuit
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REFERENCES
The following references were chosen for their relevance
to the material in this paper, and are but a small sample of the
vast library available to the interested reader.
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APPENDIX
Table 15. MC33260 Converter Bill of Materials
Ref Des
Description
Part Number
Manufacturer
C1,C7
BC1601-ND
BC Components
C2
BC1601-ND
BC Components
C3
Cap, 1.0 nF
C4
Cout:traditional boost
ECO-S2WP221CX
Panasonic
Cout:follower boost
ECE-S2WP331EX
Panasonic
C8,C9
1.0 nF
CT traditional boost
10 nF
CT follower boost
560 pF
D1-4
1N4934
ON Semiconductor
D5
MUR460E
ON Semiconductor
D6
1N4934
ON Semiconductor
F1
2.0 A
Standard
Lp
47283900
Thomson Orega
L2:traditional boost
SRW42EC-U07V002
TDK
L2:follower boost
10689480
Thomson Orega
Q1
MOSFET
IRFB11N50A
IR
R3
Resistor, 47 W
Rcs
R5,R6
Resistor, 1.0 M
Rocp
Resistor, 20 k
*R13
Resistor, 25 k
IC1
MC33260
ON Semiconductor
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R20
R21
R22
R23
Q3
D1
D5
D6
D2
Cin
F1
D3
L1
C23
D4
C26
FB
40237
R7
Loop Comp
Rac1
C8
R2
R
FB/SD
Vcc
C7
R24
Q2
C22
Vref
R8
Shutdown
Dout
C2
Q1
Pcomp
NCP1650
R9
R16
Out
Cout
Rdc1
Pmax
Rshunt
C9
Output
Iavgfltr
Iavg
AC Comp
C4
Is-
Ct
AC ref
Ramp Comp
AC in
Gnd
AC
Input
Rac2
R3
Cac
R13
R10
Ct
C11
C3
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Rdc2
Description
Part Number
Manufacturer
C2
C1608X7R1H104KT
TDK
C3
C1608X7R2A103M
TDK
C4
C1608X7R1H102K
TDK
C5
C1608X7R1H223K
TDK
C7
C3225X5R0J476MT
TDK
C8
C3225X5R1C226MT
TDK
C9
C3216X5R1A475KT
TDK
C11
C1608C0G1H471JT
TDK
C14
C1608C0G1H471JT
TDK
C20
ECQ-U2A474ML
Panasonic (Digi-P10734-ND)
C21
MKP1841-410-405
Vishay-Sprague
C22
C1608X7R1H104KT
TDK
C23
ECA-1EM101I
Panasonic (Digi-P10413TB-ND)
C25
ECO-S2WP101BA
Panasonic (Digi-P7427-ND)
C26
C3216X7R1E105KT
TDK
D1-D4
1N5406
ON Semiconductor
D5
MMSZ5248BT1
ON Semiconductor
D6
BAS19LT1
ON Semiconductor
D7
MURHF860CT
ON Semiconductor
F1
1025TD2A
Bussman
L1
SRW28LEC-U25V002
TDK
L22
LFZ28V06
Delta Electronics
L32
BU10-6003R0B
Coilcraft
L22
TSL1315-101K2R5
TDK
L32
TSL1315-101K2R5
TDK
Q1
FQP12N60
Fairchild
Q2
Bipolar transistor, 50 V
MMBT2222ALT1
ON Semiconductor
Q3
IRFiB7N50A
International Rectifier
R3
CRCW12061401F
Vishay
R4
CMF-55-178K00FKRE
Vishay
R5
CMF-55-3K5700FKBF
Vishay
R6
CMF-55-178K00FKRE
Vishay
R7
CRCW12066K20JNTA
Vishay
R8
CRCW12068K90JNTA
Vishay
R9
CRCW12066652F
Vishay
R10
CRCW12069531F
Vishay
R13
CRCW1206342F
Vishay
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Description
Part Number
Manufacturer
R16
Resistor, SMT, 10
CRCW1206100JRE4
Vishay
R20
CCF-07-103J
Vishay
R21
CCF-07-103J
Vishay
R22
CCF-07-103J
Vishay
R23
CCF-07-125J
Vishay
R25
CRCW12064K70JNTA
Vishay
R26
Resistor, SMT, 12 k
CRCW120612K0JNTA
Vishay
R27
CMF-55-453K00FKBF
Vishay
R28
CMF-55-4533F
Vishay
R29
CCF-55-9K09FHR362
Vishay
R30
WSL2512R0500FTB
Vishay
U1
PFC Controller
NCP1650
ON Semiconductor
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Input
1
2
F1
C9
C29
R9
R3
C8
R8
CHOKE CM
C10
R2
FB/SD
16
D4
D3
D2
18
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3
R4
C3
R7
12
C6
Is+
Out
Vref
C16
D7
C12
C13
D17
D16
R1
D14
D6
R34A R34B
Q2
C25
R10
T2
C24
D11
R31
D5
C21
D8
C5
Figure 56. NCP1651 120 W One Stage PFC Flyback Converter Schematic
13
12
U3B
MC3303
U3A
C23
MC3303
14
U3D
R29
C18
MC3303
U3C
C17
MC3303
R22
R26
10
C22
+ -
R30
R25
R24
R6
R23
R33
D13
+ -
C11
U1
C27
NCP1651
AC Comp
AC ref
AC in
R11
11
10
C26
Startup
Ramp
D1
Ct
L2
Vcc
Iavg
J1
Gnd
56
Ifltr
+ + -
R28
R27
D10
C20
C4
D9
R21
C31
C19
U4
U2
R20
J2
C28
Output
1
2
Description
Part Number
Manufacturer
C1
C3216X7R1H105KT
TDK
C3
C1608C0G1H471JT
TDK
C5
C1608C0G1H471JT
TDK
C6
C1608X7R1H471KT
TDK
C8
C1608X7R1H223KT
TDK
C9
C1608X7R1H223KT
TDK
C10
C1608X7R1H102KT
TDK
C11
C1608X7R1H103KT
TDK
C12, C13
C1608X7R1H104KT
TDK
C16
ECA-2WHG2R2
EKA00DC122P00
Panasonic (Digi-P5873)
Vishay Sprague (20)
C17
C3225X5R0J226MT
TDK
C18
C1608X7R1H473KT
TDK
C19
C1608X7R1H103KT
TDK
C20
C3216X7R1E105KT
TDK
C21
C22, 23
ECO-S1CP153AA
Panasonic (Digi-P6864-ND)
MVZ16VC681MJ10TP
United Chemicon
C24
C1608X7R1H103KT
TDK
C25
ECK-03A102KBP
Panasonic
C26
ECQ-U2A125ML
Panasonic (Digi-P11012-ND)
C27
MKP1841-468-405
Vishay-Sprague
C28
C3216X7R1E105KT
TDK
D1D4
1N5408
ON Semiconductor
D5
MBR10100CT
ON Semiconductor
D6
MUR460
ON Semiconductor
D7
1N4006
ON Semiconductor
D8D11
BAS19LT1
ON Semiconductor
D12
1.5KE250A
ON Semiconductor
D16
1.5KE100A
ON Semiconductor
D13
AZ23CK18
Vishay Dale
F1
1025TD2A
Bussman
L2
TSL1315-101K2R5
TDK
L3
TSL1315-101K2R4
TDK
Q1
SPA11N80C3
Infineon
Q2
MMBT2222ALT1
ON Semiconductor
R1
Resistor, SMT1206, 10 W
CRCW120610R0F
Vishay Dale
R2
R3
R4
CRCW12061823F
Vishay Dale
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Description
Part Number
Manufacturer
R5
WSL2512, 0.12 W 1%
Vishay Dale
R7
CRCW12061152F
Vishay Dale
R8
CRCW1206
Vishay Dale
R9
R11
CRCW1206
Vishay Dale
R20
CRCW1206
Vishay Dale
R21
CRCW1206
Vishay Dale
R22
CRCW1206
Vishay Dale
R23
CRCW1206
Vishay Dale
R24
CRCW1206
Vishay Dale
R25
CRCW1206
Vishay Dale
R26
CRCW1206
Vishay Dale
R27
CRCW1206
Vishay Dale
R28
CRCW1206
Vishay Dale
R29
CRCW1206
Vishay Dale
R30
CRCW1206
Vishay Dale
R31
WSL2516
Vishay Dale
R32
WSL2517
Vishay Dale
R33
CRCW1206
Vishay Dale
R34
R35
CRCW1206
Vishay Dale
R36
Resistor, SMT1206, 12 k
CRCW1206
Vishay Dale
R37
CRCW1206
Vishay Dale
T1
Transformer, flyback
SRW54EC-U03V004
TDK
U1
PFC Controller
NCP1651
ON Semiconductor
U2
TL431ACD
ON Semiconductor
U3
Quad Op amp
MC3303D
ON Semiconductor
U4
SFH615AA-X007
Vishay Dale
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58
AND8182/D
100 Watt Universal Input
PFC Boost Using NCP1601A
Prepared by: Kahou Wong
ON Semiconductor
http://onsemi.com
APPLICATION NOTE
INTRODUCTION
This application note presents a Power Factor Correction
(PFC) boost regulator example circuit using NCP1601A in
Figure 1 with the design steps and measurement. The
measurement shows that the circuit has a greater than 0.9
Power Factor under the universal input (85 to 265 Vac). The
NCP1601A is one of the latest ON Semiconductor
230 mH / 6 A / 25:1
1 mH / 2 A
1 mF
1 mF
MUR460
Output
390 V/
100 W
1N4001
150 k
1/2 W
1N4001
Input
85 Vac
to
265 Vac
1 mF
50 V
1 mF
50 V
470 mF
25 V
1N5406 x 4
SPP07N60C3
650 V, 0.6 W
100 mF
450 V
1.8 M
MZP4745A
150 k
NCP1601A
10
1k
0.05 / 1 W
1000 pF 0.15 mF
680 pF
100 pF
59
AND8182/D
Current
Inductor current, IL
V
*V
V
VCC + VC1 ) VC2 + nin ) out n in
V
+ out
n u VCC(off)
time
DCM
Critical Mode
DCM
V
390
VCC + out
n + 25 + 15.6V
DESIGN STEPS
Step 1. Define the Specifications
-6 4.75
tstart + CdV + 470 10 @
+ 893ms
2.5 10-3
I
Table 1. Specifications
Input
Output
Switching frequency
-6
tstart + CdV + 470 10 @ 13.75
+ 11.4s
I
8515 10-3
Step 3. Take an Assumption on Efficiency
1.95MW + 390V
h + 90%
100
P
Pin + out
h + 90% + 111W
2
2652
Power + V +
+ 0.47W
150 103
R
Vin
n:1
VCC
C1
Vout
Iac +
C2
Pin
111
+
+ 1.31Aac
85
Vac
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AND8182/D
Step 5. Oscillator Capacitor Design
2LIchPin
Vcontrol +
CrampVac2
f + 107kHz
T + 1 + 9.35ms
f
t1 ) t2 +
V
* Vin Vin 1
L(CRM) + out
Ipk f
Vout
390 * 2 85 2 85
1
+
+ 210mH
390
3.7 107 103
t1 +
V
* Vin Vin 1
freq + out
Vout
Ipk L
CrampVcontrol
-12 @ 1.01
+ 700 10
+ 7.07ms
100 10-6
Ich
t1 ) t2 +
390 * 2 85 2 85
1
+ 98kHz t 107kHz
390
3.7 230 10-6
CrampVcontrol
Vout
Vout * Vin
Ich
390
700 10-12 @ 0.1
100 10-6
390 * 2 265
+ 17.92ms u T
t1 +
P
Cramp u in2 @ 2LIch
Vac
10-6 @ 100
390
700 10-12 @ 1.01
100 10-6
390 * 2 85
In high line 265 Vac, the switching period (t1 + t2) and
MOSFET on time (t1) are as followed.
L + 230mH
111
@ 2 @ 230
852
CrampVcontrol
Vout
Vout * Vin
Ich
+ 10.22ms u T
CrampVcontrol
-12 @ 0.1
+ 700 10 -6
+ 0.7ms
100 10
Ich
10-6 + 706pF
Cramp + 680pF
IL(OCP) +
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61
RS @ 200mA * 3.2mV
RCS
AND8182/D
IL(ZCD) +
RS @ 14mA * 7.5mV
C + 100mF
RCS
C+
RS @ 200mA * 3.2mV
IL(OCP)
536 @ (200
10-6) * 0.0032
+ 0.028W
3.7
RS @ 14mA * 7.5mV
IL(ZCD) +
RCS
536 @ (14
2Pout @ tHOLD
Vout_min2 * VOP_min2
10-6) * 0.0075
+ 143mA
0.028
Rout
RCS + 0.05W
Figure 4. Low-Frequency Equivalent Circuit
of the Output Stage
RS + 1kW
IL(OCP) +
+
IL(ZCD) +
RS @ 200mA * 3.2mV
RCS
1000 @ (200
2 100
2 P
out
+
+ 0.363A
390
Vout
10-6) * 0.0032
+ 3.936A
0.05
discharging time =
RS @ 14mA * 7.5mV
ripple
1
4fL
RCS
1000 @ (14
Vout
10-6) * 0.0075
+ 130mA
0.05
Vin
1
2fL
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62
AND8182/D
and the percentage of the high frequency current (IL) getting
into the input side (Iin) is as follows.
1(2pfCF)
Iin
1
+
+ 22
IL
4p f LFCF * 1
2pfLF * 1(2pfCF)
10-6
2 @ 1000
10-6 @ 1
10-6 * 1
+ 0.31%
4p2 @ 11.10
V 2@h
V 2
Req + in + in
Pin
Pout
Iin
IL
LF
VF
LF
CF
Vin
IF
IL
Req
Zin
CF
IF
Vin
IL
Iin
IF
IL
Iin
CF
IF
IF
Iin
Iin
+
IL
1)
LCF 2
1(2pfReqLCF)2 + 1 ) Vin2Ph2pf
out
p @ 50 @ 1
1 ) 2652 @ 0.9 @ 2 @100
+ 101.95%
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63
10-6 2
AND8182/D
Step 12. Layout Design
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64
AND8182/D
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65
AND8182/D
Step 13. Fine Tuning Capacitor on Vcontrol Pin
Output
Efficiency
PF/ THD
85 Vac 108.2 W
370.5 V 100.8 W
93.17%
0.995 / 8.3%
384.8 V 101.2 W
93.83%
0.991 / 12.8%
385.2 V 99.8 W
94.33%
0.990 / 11.3%
391.2 V 99.8 W
95.41%
0.975 / 11.9%
394.2 V 100.1 W
95.63%
0.952 / 16.7%
394.8 V 100.3 W
96.05%
0.945 / 21.1%
400.9 V 100.5 W
96.08%
0.901 / 38.9%
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66
AND8182/D
In order to illustrate the capability of both DCM and CRM
operation of the NCP1601, Figures 15 to 17 are taken. The
upper trace of the figures is the boost input voltage with 100
V/div. The lower trace is the voltage across the 0.05 W
current sense resistor with 50 mV/div so that the inductor
current and the mode of operation are indirectly shown.
Figure 15 shows the traces with 2 ms time base so that the
maximum and minimum value of the boost input voltage is
observed in this time base but the voltage across the current
sense resistor is too noisy to study. Figure 16 shows the
moment when the boost input voltage is the maximum. It
illustrates that the circuit is in CRM operation in this
moment. Figure 17 shows the moment when the boost input
voltage is the minimum. It illustrates that the circuit is in
DCM operation.
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67
AND8182/D
CONCLUSION
Part No.
Description
Manufacturer
NCP1601A
PFC Controller
ON Semiconductor
1N5406
ON Semiconductor
1N4001
Standard Diode,1 A 50 V
ON Semiconductor
MUR460
ON Semiconductor
MZP4745A
Zener Diode, 16 V 5%
ON Semiconductor
PCV-2-105-02
Inductor, 1000 mH / 2 A
Coilcraft
CTX22-16885
Cooper Coiltronics
SPP07N60C3
Infineon
RE105
Okaya
50MH71M4X7
Rubycon
UHD1E471MPD
Nichicon
450AXW100M18X40
Rubycon
VJ1206A101KXAA
Vishay
VJ1206Y154KXXA
Vishay
VJ1206A681KXAA
Vishay
VJ1206A102KXAA
Vishay
WSL2010-R0500-F
Vishay Dale
26-60-4030 or 009652038
Male Header
Molex
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68
AND8182/D
Appendix II Summary of Equations in NCP1601 Boost PFC
Description
Boost converter
t ) t2
Vout
+ 1
t2
Vin
t ) t2
Vout
+ 1
t2
Vin
Vout * Vin +
Vout
MOSFET on-time t1
Vout * Vin +
t1
t1 ) t2
Vout
t ) t2 Ipk
Iin + 1
2
T
Ipk
2
Iin +
T
Vton +
V
t1 ) t2 control
Vton + Vcontrol
t1 +
LIpk
Vin
, or
t1 +
CrampVcontrol
Ich
LIpk
Vout
Vout * Vin Vin
t1 ) t2 +
Same as CRM
Vac2CrampVcontrol
Pin +
2LIch
Pin_max +
CrampVcontrol
VoutVout
T
Ich
* Vin
Same as CRM
2LIch
CrampVcontrol
hVac2CrampVcontrol
Same as CRM
2LIch
Same as CRM
Vac2Cramp
2LIch
Same as CRM
P
Cramp u in2 @ 2LIch
Vac
Same as CRM
2LIchPin
Vctrl +
CrampVac2
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69
* Vin CrampVcontrol
VoutVout
T
Ich
T CrampVcontrol
, or
t1
Ich
Same as CRM
V
* Vin Vin 1
L u L(CRM) + out
Vout
Ipk f
t1 +
t1 ) t2 +
Pout + hPin +
Vin
, or
t1 ) t2 +
Output power
LIpk
CrampVcontrol
Vout
, or
Vout * Vin
Ich
Zin +
Input power
t1 +
t1 ) t2 +
Input impedance
t1
t1 ) t2
AND8185/D
300 W, Wide Mains, PFC
Stage Driven by the
NCP1653
Prepared by: Joel Turchi
ON Semiconductor
http://onsemi.com
APPLICATION NOTE
Introduction
70
AND8185/D
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71
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72
Earth
C11
1 mF
Type X2
C13
4.7 nF
Type = Y1
90 TO 265 Vac
L4
150
mH
CM1
C12
4.7 nF
Type = Y1
C15
680 nF
U1
KBU6K
C9
100 nF
C1
100 nF
Type = X2
C8
1 nF
R2
470 k
R4
4.7
Meg
C6
1 nF
C7
100 nF
R6
2.85 k
U2
NCP1653
680 k
R5
560 k
R9
0.1
R7
R3
56 k
C5
1 nF
+C4
C3
100 n 22 mF
+ 15 V -
680 k
R8
L1
600 mH
4.5
R1
R10
10 k
M1
SPP20N60S
D1
CSD04060
C2
+
100 mF
Type = snap-in
450 V
390 V
AND8185/D
AND8185/D
PCB LAYOUT
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73
AND8185/D
GENERAL BEHAVIOR - TYPICAL WAVEFORMS
Vout (CH3)
Vin (CH2)
Vpin5 (CH1)
Figure 5.
Vac = 90 V, Pin = 326.5 W, Vout = 365 V, Iout = 822 mA, PF = 0.999, THD = 4 %
Vout (CH3)
Vin (CH2)
Vpin5 (CH1)
Figure 6.
Vac = 220 V, Pin = 325 W, Vout = 384 V, Iout = 814 mA, PF = 0.989, THD = 8 %
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74
AND8185/D
THD and Efficiency at Vac = 110 V
Pin
(W)
Vout
(V)
Iout
(A)
PF
(-)
THD
(%)
eff
(%)
331.3
370.0
0.83
0.998
93
296.7
373.4
0.74
0.998
93
157.3
381.8
0.38
0.995
92
109.8
383.5
0.26
0.993
91
80.7
384.4
0.19
0.990
10
91
67.4
385.0
0.16
0.988
10
91
10
93
92
Efficiency (%)
94
THD (%)
12
6
4
2
91
90
89
88
50
100
150
200
250
300
50
350
100
150
200
250
300
350
Pin (W)
Pin (W)
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75
AND8185/D
THD and Efficiency at Vac = 220 V
Pin
(W)
Vout
(V)
Iout
(A)
PF
(-)
THD
(%)
eff
(%)
66.9
386.6
0.16
0.920
15
92
80.2
386.5
0.19
0.933
14
92
110.0
386.7
0.27
0.960
11
95
157.3
386.4
0.38
0.978
93
215.7
386.2
0.53
0.985
95
311.4
385.4
0.77
0.989
95
21
99
18
97
Efficiency (%)
THD (%)
15
12
9
95
93
91
6
89
3
0
50
100
150
200
250
300
87
50
350
Pin (W)
100
150
200
250
300
350
Pin (W)
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AND8185/D
Thermal Measurements
Measurements Conditions:
Vac = 90 V
Pin = 326 W
Vout = 365 V
Iout = 0.82 A
PF = 0.999
THD = 3 %
Coil
Coil
Power MOSFET
Heatsink
Bulk Capacitor
Output Diode
(ferrite)
(wires)
Input Bridge
100C
80C
50C
75C
100C
130C
85C
No Load Operation
388V
Vout (CH3)
Vin (CH2)
Vpin5 (CH1)
Figure 11.
Pout = 0 W, Vac = 230 V
The power losses @ 220 Vac, are nearly 130 mW. This
result was obtained by using a W.h meter (measure duration:
1 h).
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AND8185/D
Soft-Start
DRV (Vpin7)
Vpin2 (CH3)
(Vcontrol regulation output)
Vout (CH1)
Vin (CH2)
Figure 12.
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78
AND8185/D
Bill Of Materials
Ref Des
Description
Part Number
Manufacturer
C1
PHE840MX6100M
RIFA
C2
100 mF / 450 V
BC Components
C3
100 nF / 50 V
various
C4
47 mF / 35 V
various
C5
1 nF / 50 V
various
C6
1 nF / 50 V
various
C7
100 nF / 50 V
various
C8
1 nF / 50 V
various
C9
100 nF / 50 V
various
C11
1 mF / 275 V type X2
PHE840MD7100M
RIFA
C12
DE1E3KX472MA5B
muRata
C13
DE1E3KX472MA5B
muRata
C15
PHE840MD6680M
RIFA
R1
various
R2
various
R3
various
R4
various
R5
various
R6
R7
R8
various
R9
various
R10
various
various
RLP3 0R1 1%
VISHAY
L1
Coil 600 mH
Coil 650 mH
Coil 600 mH
C1062-B
MB09008
SRW42EC-E03H001
CoilCraft
microSpire
TDK
L4
DM Choke
Wurth Elektronik
B82725-J2402-N20
EPCOS
U1
Diodes Bridge
KBU6K
General Semiconductor
D1
Output Diode
CSD04060
CREE
M1
MOSFET
SPP20N60S5
Infineon
Heatsink (2.9C/W)
437479
AAVID THERMALLOY
Controller
NCP1653
ON Semiconductor
CM1
U2
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79
AND8185/D
Vendors Contacts
Vendor
Contact
Product Information
CoilCraft
www.coilcraft.com
microSpire
TDK
www.microspire.com
Info@tdk.de
www.tdk.co.jp/tetop01/
www.cree.com/Products/pwr_sales2.asp
www.cree.com/Products/pwr_index.asp
EPCOS
CREE
www.epcos.fr/
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80
AND8209/D
90 W, Single Stage,
Notebook Adaptor
Prepared by: Terry Allinder
ON Semiconductor
Sr. Applications Engineer
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APPLICATION NOTE
Detailed Circuit Description
General Description
The 90 W demo board demonstrates the wide range of
features found in the NCP1651. It provides an 18.5 V, 4.86 A
isolated output, foldback current limit which is ideal for
low-cost battery charger and notebook adaptor applications.
This unit will provide an isolated 18.5 V output from an
input source with a frequency range from 47 Hz to 63 Hz,
and a voltage range of 90 Vrms to 265 Vrms. It is fully
self-contained and includes an internal high voltage startup
circuit, and bias supply that operates off of the Flyback
transformer auxiliary winding.
In addition to excellent power factor, this chip offers fixed
frequency operation in continuous and discontinuous modes
of operation. It has a wide variety of protection features,
including instantaneous current limiting, average current
limiting, and an accurate secondary side power limit.
Features
Symbol
Min
Max
Input
Vac
90
265
Frequency
Hz
47
63
Vo (Static Regulation)
Vdc
18.4
18.6
Io
Adc
4.86
Output Power
90
Efficiency
84
mW
500
Standby Power
Vin 230 Vac
81
AND8209/D
Average Current vs. Phase Angle
Limits
POmax
Vinmax
Vinmin
Vo
Lp
fswitch
Np/Ns
= 90 W
= 265 Vrms
= 90 Vrms
= 18.5 V
= 600 mH
= 100 kHz
= 8.43
1.8
1.6
1.4
CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
45
90
PHASE ANGLE ()
135
180
3.5
Peak Current
3.0
CURRENT (A)
Pout
Vi
Effic
fLINE
T
Pin
4.0
2.5
2.0
Pedestal Current
1.5
1.0
0.5
0.0
45
90
135
180
PHASE ANGLE ()
Figure 13.
Primary Inductance Selections
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AND8209/D
Transformer Turns Ratio
250
700
600
200
500
150
400
Max Recommended
Diode VR
300
100
200
Area of Operation
50
100
0
DV + DVcap2 ) DVesr2
4
5
6
7
8
9 10 11
TRANSFORMER TURNS RATIO
Ipk ) Iped
2
DVesr + Ipkesr
0
2
Ioavgdt
Co
12
DV +
Po
sin Q
2CoVo2pf
line
Where:
Ipk = Peak current (secondary)
Iped = Pedestal of the secondary current
Co = Output capacitance
esr = Output capacitor equivalent series resistance
T = Switching frequency
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AND8209/D
Control Loop
RIPPLE (V)
0.20
0.10
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
45
90
135
180
DEGREES
Loop Stability
Suggested
Value
CTRopto =
VCC =
Optocoupler Current
Transfer Ratio
(Icoll/Idiode)
12 V
8,333
4,700 W
Optocoupler Series
Resistor
Rfb =
455
560 W
Cfb =
70.6
22 mF
Ropto =
fz error amp =
12.92 Hz
fp output =
2.68 Hz
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2.5
AND8209/D
Open Loop Gain
Loop Phase
100
-75
80
-90
High Line
PHASE ()
GAIN (dB)
60
40
20
-105
-120
-135
0
-150
-20
Low Line
-40
-60
0.01
0.1
10
-165
100
-180
0.01
1000
FREQUENCY (Hz)
0.1
10
100
FREQUENCY (Hz)
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85
1000
0.01
mF
C9
1
2
J1
Input
R9
6.6 k
R3
330 k
F1
1 nF
R11
1.0 K
0.02
mF
R8
680
C10
vfb
D2
1N4006
33 k
R4
470
pF
C3
U1
Is+
Out
Vref
C6
12
8.6 k 470
pF
R7
D4
1N4006
C26
D3
0.47 mF 1N4006
AC cmp
AC ref
AC in
FB/SD
12 nF
C11
11
10
R2
330 k
C8
C29
0.47 mF
16
L2
0.1
mF
0.1
mF
R34
100 k
D6
MUR160
R5
100 k
C25
6
0.01 mF
R13
0.2
Q2
SPP11N80C3
Q1
SPP11N80C3
R35
100 k
R10
0.2
C13
R1
2.7
D14
BAS19LT1
C16
2.2 mF
C12
C27
1.2 mF
D7
1N4006
15
R23
2.67 K
C24
0.01 mF
R33
17.4 K
R31
R6
0.006 0.006
R30
100
13
12
+
-
R22
560
+
-
C17
22 mF
R26
3.3 k
MC3303
+Vccsec
U3D
14
R29 2 K
R20
2k
R28
3.3 k
C19
0.01 mF
R27
7.5 k
C20
1 mF
R21
8.2 k
U4
SFH6155AA
+Vccsec
C31
C1
3900 3900
mF
mF
MC3303
U38
C18 0.22 mF
C23
3900
mF
D13
AZ23CK18
C22
3900
mF
2
F
D11
BAS19LT1
D5
MUR20100CT
14
5
11
10
C21
2200 mF
D8
BAS19LT1
vfb
C2
1 nF
C28
1 mF
TL431
U2
1
2
4
3
Gnd
2
Ramp
4
Startup
Ct
3
13
Vcc
Iavg
7
Ilftr
6
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11
86
11
C5
470 pF
1
2
J2
Output
D1
1N4006
AND8209/D
AND8209/D
DEMO BOARD TEST PROCEDURE
Table 4. Test Equipment
AC Source 85-265 Vac, 47-64 Hz
Digital Multimeter
Vo (Vdc)
@ No Load
Vo (Vdc)
@ 45 W
Vo (Vdc)
@ 90 W
THD (%)
PF
90 W
90
18.7
18.6
18.5
8.0
0.995
115
18.7
18.6
18.5
10
0.990
230
18.7
18.6
18.5
20
0.920
Table 5 shows typical values, the initial set point (18.5 Vdc may vary).
7.
8.
9.
10.
11.
12.
13.
14.
To verify total harmonic distortion (THD) first, shut off the AC power supply.
Connect the Voltec Precision Power Analyzer as shown in Figure 13.
Turn on the AC source to 115 Vac at 60 Hz and set the electronic load to 90 W (only measure the THD at full load).
Verify the voltage and current Harmonics of the circuit as shown in Table 5.
Shut off the power AC power supply.
Set the variable electronic load to 90 W.
Turn on the AC source and set it to 230 Vac at 60 Hz.
Verify the voltage and current Harmonics of the circuit as shown in Table 5.
http://onsemi.com
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AND8209/D
NCP1651 DEMO BOARD TEST RESULTS
PERFORMANCE DATA
Regulation
Vin (Vac)
Pin (W)
Vo (Vdc)
IO (Adc)
PO (W)
Eff (%)
90
106.03
18.55
4.85
89.97
84.85
115
105.21
18.55
4.85
89.85
85.40
230
105.1
18.57
4.85
90.1
85.69
Standby Power
Vin (Vac)
Pin (mW)
115
372
230
455
PF (W)
THD (%)
PO (W)
90
0.995
8.5
90
115
0.990
9.18
90
230
0.940
19.45
90
U.S. Phone/Internet
ON Semiconductor
1-800-282-9855
www.onsemi.com/
TDK
1-847-803-6100
www.component.tdk.com/
Vishay
www.vishay.com/
1-888-414-2645
www.cooperet.com/
1-888-414-2645
www.cooperet.com/
Fairchild
www.fairchildsemi.com/
Panasonic
www.eddieray.com/panasonic/
Weidmuller
www.weidmuller.com/
Keystone
1-800-221-5510
www.keyelco.com/
HH Smith
1-888-847-6484 www.hhsmith.com/
Aavid Thermalloy
www.aavid.com/
http://onsemi.com
88
AND8209/D
Table 6. NCP1651 Application Circuit Parts List
Ref Des
Description
Part Number
Manufacturer
C2
VJ0603Y102KXXET
VISHAY
C3
VJ0603Y471JXXET
VISHAY
C4
EKB00BA310F00
VISHAY
C5
VJ0603Y471JXXET
VISHAY
C6
VJ0603Y471JXXET
VISHAY
C8
VJ0603Y223KXXET
VISHAY
C9
VJ0603Y103KXXET
VISHAY
C11
VJ0603Y123KXXET
VISHAY
C10
VJ0603Y102KXXET
VISHAY
C12, C13
VJ0606Y104KXXET
VISHAY
C16
ECA-2WHG2R2
EKA00DC122P00
Panasonic (DigiP5873)
Vishay Sprague (20)
C17
C3225X5R0J226MT
TDK
C18
VJ0603Y224KXXET
VISHAY
C19
VJ0603Y103KXXET
VJ0603Y103KXAAT
C20
C3216X7R1E105KT
TDK
C21
ECA1EM331
Panasonic
25YXH3900M16X35.5
UHE1E392MHD
Rubycon
Nichicon
C24
VJ0603Y103KXAAT
VISHAY
C25
225261148036
Vishay
C27
F1778-512K2KCT0
Vishay
C26, C29
MKP1841-447-3000
Vishay-Sprague
C28
C3216X7R1E105KT
TDK
D1D4
1N4006
ON Semiconductor
D5
MUR20100CT
ON Semiconductor
D6
MUR160
ON Semiconductor
D7
1N4006
ON Semiconductor
BAS19LT1
ON Semiconductor
D13
Zener Diode, 18 V
AZ23C18
VISHAY
F1
1025TD2A
Bussman
L2
Q4007-A
Coilcraft
Q1, Q2
SPA11N80C3
Infineon
R1
CRCW1206270JRE4
Vishey
R2
CMF-55-270K00FKRE
Vishey
R3
CMF-55-270K00FKRE
Vishey
R5
CFP-3104JT-00K
VISHAY
R4
Resistor, SMT1206, 33 k
CRCW120633KOJNTA
Vishey
R7
CRCW12068661F
Vishey
R8
CRCW12066800F
Vishey
R10
WSL2512 .20 1%
Vishey Dale
http://onsemi.com
89
AND8209/D
Table 6. NCP1651 Application Circuit Parts List (continued)
Ref Des
Description
Part Number
Manufacturer
R9
CMF-55-5K400FKBF
Vishey
R11
CRC12061K00JNTA
Vishey
R12
CFP-3104JT-00K
VISHAY
R13
WSL2512 .20 1%
Vishey Dale
R14
CRC12062K100JNTA
Vishey
R20
CRC12062K00JNTA
Vishey
R21
CRC12068K20JNTA
Vishey
R22
CRC12062K00JNTA
Vishey
R23
CRCW12062670F
Vishey
R26
CRC12063K30JNTA
Vishey
R27
CRC12067K50JNTA
Vishey
R28
CRC12063K30JNTA
Vishey
R29
CRC12062K00JNTA
Vishey
R30
CRCW12061000F
Vishey
R31
WSL251R006FTB
Vishey
R6
WSL251R006FTB
Vishey
R33
CRCW120617400F
Vishey
R34
CFP-3104JT-00K
VISHAY
R35
CFP-3104JT-00K
VISHAY
T1
SRW42EC-U10H014
TDK
U1
PFC Controller
NCP1651
ON Semiconductor
U2
TL431ACD
ON Semiconductor
U3
Quad Op A
MC3303D
ON Semiconductor
U4
SFH615AA-X007
Vishay
Part Number
Manufacturer
Hardware
Ref Des
Description
H1
H2
Connector
171602
Weidmuller
(Digi 281-1435-ND)
H3
Connector
171602
Weidmuller
(Digi 281-1435-ND)
4672
Keystone
Manufactured
Insulator
H8, H9
Aluminum Heatsinks
http://onsemi.com
90
AND8124/D
90 W, Universal Input,
Single Stage, PFC
Converter
http://onsemi.com
General Description
91
J1
Input
C26
1.2 mF
R3
180 k
92
R11
1.2 k
NCP1651
16 Start-up
11 AC cmp
1st
littr 8
Lavg 7
Ct 3
Ramp 4
GND 2
R35
4.7 k
R8
680
http://onsemi.com
C3
Out
C16
2.2 mF
C6
VCC
10 ACref
12
13
Vref
.68 mF
9 ACin
8 FB/SD
U1
R1 10
1.5kE68CA
D16
1.5kE25CA
D12
R34B
56 k
180 k
R2
D4
1N4006
D3
1N4006
D7
1N4006
Q1
C25 1 nF
R34A
56 k
C11
.001 mF
02
2N2222A
100 mH
L3
100 mH
3
4
T3
R5
.12
D6
MUR160
C13
.1 mF
C12
.1 mF
470 pF
R7 8.66 k
470 pF
R4 35 k
C10
1 nF
C8
.022 mF
R9
3.6 k
C9
.022 mF
R25
2k
4 U3A
1
+
-
13
12
11
+
-
MC3303
U3D
14
R29 2.0 k
C18 .047 mF
R22
C17
392 22 mF
4
10 + U3C
8
9 MC3303
R26
11
3.3 k
11 MC3303
MC3303
11
C5
470 pF
4 U5B
5
7
+
6
C23
1500 mF
BAS19LT1
D10
C20
1 mF
C19
1 mF
BAS19LT1 2
C4
1000 pF
1
D9
R21
2k
R27
7.5 k
R32
R30
300
C22
1500 mF
D13
AZ23C18
U4
R20
2k
Output
R31 .07
C24
.01 mF
R24
174
D11
BAS19LT1
R23
210
R33
40.2 k
D5
14 MUR1620CT
15
11
5
10
D9
BAS19LT1
7
C21
220 mF
TP2
GND
R36
12 k
D2
1N4006
o
o
L2
J2
TP1
Shutdown
F1
C27
o
D1
1N4006
AND8124/D
1 2
C28 1 mF
TL431
U2
R28
3.3 k
AND8124/D
Overshoot/Undershoot Circuit
Two sections of the quad amplifier are used as
comparators. One of these monitors the output for
overvoltage condition and the other for undervoltage
condition. The voltage divider requires four resistors (R33,
R23, R24, and R25) in order to make the various ratios
available for the two comparators as well as the error
amplifier.
The undervoltage comparator provides the drive for the
opto-coupler. Its output is normally in the saturated high
state, which allows the flow of current into the opto-coupler
to be determined by the error amplifier or overvoltage
comparator. If an undervoltage condition occurs, the output
of the UV comparator goes low, which reduces the drive
current to the opto-coupler LED. This causes the NCP1651
to go into a high duty cycle state, and will increase the flow
of current into the output until the output voltage is above the
UV limit.
The over-voltage comparator's output is OR'ed with the
output of the error amplifier. During an overvoltage event
(e.g. a transient load dump), the output of this comparator
will go to ground, and cause the maximum current to flow
in the opto-coupler LED. This will pull pin 8 low and reduce
the duty cycle to zero until the output voltage is below the
OV limit. It should be noted that the purpose of the 680 W
resistor (R8) in series with the opto-coupler photo transistor,
is there to keep the voltage at pin 8 above the 0.5 V threshold
during such events. This keeps the control chip operational
and will allow immediate operation when the output voltage
is again in its normal operating range. Without this resistor,
the voltage on pin 8 would drop below 0.5 V, causing the
NCP1651 to enter a low power shutdown mode of operation.
(eq. 5)
(eq. 6)
(eq. 7)
Where:
n
Ipk
Iped
CO
esr
T
(eq. 1)
(eq. 2)
(eq. 8)
(eq. 9)
(eq. 10)
(eq. 11)
DVcap + irmsdtCO
(eq. 4)
G + (R29R30) ) 1 + 3000300 ) 1 + 11
DV +DVcap2 ) DVesr2
(eq. 3)
DV + IpkDtCO
(eq. 12)
IAVG + POVO
(eq. 13)
Ipk + IAVG0.637
(eq. 14)
Ipk + POVO0.637
+ 90(48)(0.637) + 2.95
(eq. 15)
http://onsemi.com
93
AND8124/D
If we divided the output ripple into 10 increments over one
cycle (180) the sinusoidal ripple voltage with respect to
phase angle is:
DV +
(PO0.637VO) @ sin(q)
CO @ 18 @ fline
(eq. 16)
(eq. 19)
1.50
RIPPLE (V)
1.00
0.50
0.00
(eq. 20)
-0.50
Where:
Vinmax
VO
n
Vspike
=265 Vrms
=the Output Voltage (48 V)
=the Transformer Turns Ratio (4)
=Voltage Spike Due to Transformer Leakage
Inductance
To provide a safe operating voltage for the MOSFET we
have selected Vspike to be 130 Vpeak, so when the MOSFET
turns off, the maximum Drain to Source voltage is:
-1.00
-1.50
0
45
90
DEGREES ()
135
180
E + 1 @ le @ Ipk2
2
E + 1 @ C @ V2
2
(eq. 17)
Where:
C= Snubber Capacitor
V= the Voltage Across the MOSFET
(eq. 22)
Where:
le = Leakage Inductance (9 mH Measured)
Ipk = Peak Primary Current
A Second Relationship is:
Hold-Up time
Pout + 1 COV2f
2
(eq. 21)
(eq. 18)
http://onsemi.com
94
(eq. 23)
AND8124/D
Combining Equations:
(eq. 28)
Figure 4.
Transient Response
D IO
Figure 4
115 Vac
0.19 1.92 A
Figure 5
115 Vac
1.92 0.19 A
Figure 6
230 Vac
0.19 1.92 A
Figure 7
230 Vac
1.92 0.19 A
Figure 5.
http://onsemi.com
95
AND8124/D
Power Dissipation Estimates
Pd average
D1-D4
Input Rectifier
1.65 W
Q1
MOSFET
4.1 W
D5
Output rectifier
1.7 W
T3
Flyback transformer
3.5 W
(estimate)
R34
Snubber resistor
0.84 W
D12
Transient suppressor
2.0 W
miscellaneous
0.41 W
Figure 6.
Total
14.20 W
Figure 7.
No Load
45 W
90 W
85 Vrms
47.94
47.95
47.95
115 Vrm
47.94
47.95
47.95
230 Vrms
47.94
47.95
47.95
265 Vrms
47.94
47.94
47.95
http://onsemi.com
96
AND8124/D
Table 9. Harmonics & Distortion
115 Vac 90 W
230 Vac 90 W
V harmon
A harm. %
V harm
A harm%
2nd
0.143
0.156
0.08
0.2
3rd
0.203
1.94
0.25
4.74
5th
0.13
0.6
0.12
2.88
7th
0.08
0.28
0.07
0.22
9th
0.04
0.19
0.09
0.76
11th
0.08
0.29
0.08
0.27
13th
0.16
0.32
0.06
0.33
15th
0.28
0.41
0.14
0.68
17th
0.4
0.41
0.28
0.95
19th
0.05
0.29
0.12
0.3
PF
0.998
0.971
THD(A)
3.12
6.8
Ifund
0.918
0.468
115 Vrms
230 Vrms
265 Vrms
1.5
1.52
1.51
1.59
Pin
109.42
106.27
105.35
105.25
Vo
47.95
47.95
47.95
47.95
Io
1.92
1.92
1.92
1.92
Efficiency
0.841
0.866
0.874
0.875
Pin @ No Load
U. S. Phone / Internet
ON Semiconductor
1-800-282-9855 www.onsemi.com/
TDK
1-847-803-6100 www.component.tdk.com/
Vishay
www.vishay.com/
1-888-414-2645 www.cooperet.com/
1-888-414-2645 www.cooperet.com/
Fairchild
www.fairchildsemi.com/
Panasonic
www.eddieray.com/panasonic/
Weidmuller
www.weidmuller.com/
Keystone
1-800-221-5510 www.keyelco.com/
HH Smith
1-888-847-6484 www.hhsmith.com/
Aavid Thermalloy
www.aavid.com/
http://onsemi.com
97
AND8124/D
Table 12. NCP1651 Application Circuit Parts List (Specifications:, 90 W, 85 vac to 265 vac Input Range, 48 V Output)
Ref Des
Description
Part Number
Manufacturer
C1
VJ0603Y102KXAAT
VISHAY
C3
VJ0603Y471JXAAT
VISHAY
C5
VJ0603Y471JXAAT
VISHAY
C6
VJ0603Y471JXAAT
VISHAY
C8
VJ0603Y223KXXAT
VISHAY
C9
VJ0603Y223KXXAT
VISHAY
C10, C11
VJ0603Y102KXAAT
VISHAY
C12, C13
VJ0606Y104KXXAT
VISHAY
C16
ECA-2WHG2R2
EKA00DC122P00
C17
C3225X5R0J226MT
TDK
C18
VJ0603Y473KXXAT
VISHAY
C19
VJ0603Y103KXAAT
VJ0603Y103KXAAT
C20
C3216X7R1E105KT
TDK
C21
ECA1EM331
Panasonic
C22, 23
EEU-FC1J182
EKB00JL415J00
C24
VJ0603Y103KXAAT
VISHAY
C25
ECK-03A102KBP
Panasonic
C26
F1778-512K2KCT0
VISHAY
C27
MKP1841-468-405
Vishey - Sprague
C28
VJ1206V105ZXXAT
VISHAY
D1 D4
1N4006
ON Semiconductor
D5
MUR1620CT
ON Semiconductor
D6
MUR160
ON Semiconductor
D7
1N4006
ON Semiconductor
D8 D11
BAS19LT1
ON Semiconductor
D12
TVS, 214 V, 5 W
1.5KE250A
ON Semiconductor
D13
Zener Diode, 18 V
AZ23C18
VISHAY
D16
Zener Diode, 68 V
1.5kE68CA
ON Semiconductor
F1
1025TD2A
Bussman
L2
TSL1315-101K2R5
TDK
L3
TSL1315-101K2R5
TDK
Q1
SPA11N80C3
Infineon
Q2
MMBT2222ALT1
ON Semiconductor
R1
Resistor, SMT1206, 10
CRCW1206100JRE4
Vishey
R2
CMF-55-180K00FKRE
Vishey
R3
CMF-55-180K00FKRE
Vishey
R4
CRCW120635KOJNTA
Vishey
R5
WSL2512 .12W 1%
Vishey Dale
R7
CRCW12068661F
Vishey
R8
CRCW12066800F
Vishey
http://onsemi.com
98
AND8124/D
Table 12. NCP1651 Application Circuit Parts List (Specifications:, 90 W, 85 vac to 265 vac Input Range, 48 V Output)
Ref Des
Description
Part Number
Manufacturer
R9
CMF-55-3K600FKBF
Vishey
R11
CRC12061K20JNTA
Vishey
R20
CRC12062K00JNTA
Vishey
R21
CRC12062K00JNTA
Vishey
R22
CRC12052K10JNTA
Vishey
R23
CRCW12062100F
Vishey
R24
CRCW12061740F
Vishey
R25
CRCW12062051F
Vishey
R26
CRC12063K30JNTA
Vishey
R27
CRC12067K50JNTA
Vishey
R28
CRC12063K30JNTA
Vishey
R29
CRCW12063011F
Vishey
R30
CRCW12063010F
Vishey
R31
WSL251R0700FTB
Vishey
R32
WSL251R0700FTB
Vishey
R33
CRCW120640022F
Vishey
R34
R35
CRCW12064K70NTA
Vishey
R36
CRCW120612K0JNTA
Vishey
R37
CRCR1206100K0JNTA
Vishey
T1
SRW42EC-U04H14
TDK
U1
PFC Controller
NCP1651
ON Semiconductor
U2
TL431ACD
ON Semiconductor
U3
Quad Op A
MC3303D
ON Semiconductor
U4
SFH615AA-X007
Vishay
Hardware
H1
H2
Connector
171602
H3
Connector
171602
H4
8403
H5
8403
H6
8403
H7
8403
H8
Heatsink, TO-220
590302B03600
Aavid Thermalloy
H9
Heatsink, TO-220
590302B03600
Aavid Thermalloy
H10
5005
H11
5006
H12
Shoulder Washer
3049K-ND
Digi-Key
H13
Insulator
4672
Keystone
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99
TND307
Graphical Data Test
Circuits for the NCP1650
Prepared by
Alan Ball
ON Semiconductor Applications Engineering
http://onsemi.com
0-5 V
0.1 mF
47 k
14 V
2 0.1 mF
Vref
16
Output
12
IS-
30 k
1 mF
300
0.05 mF
0 to -5 V
Iavg
Iavg fltr
10
11
0-5 V
1 nF
Pmax
Ramp
GND
CT Comp
15 k
15
14
13
10 k 470 pF
47 k
0-5 V
10
1k
3
4
5
6
7
8
9
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
0.5 mF
3
4
5
6
7
8
9
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
30 k
APPLICATION NOTE
2 0.1 mF
Vref
14 V
1 mF
16
Output
12
ISIavg
Iavg fltr
10
11
Pmax
Ramp
GND
CT Comp
15
14
13
10 k 470 pF
47 k
100
TND307
3.3 k
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
3
4
5
6
7
8
9
Pmax
GND
15
10 k
Vref
14 V
30 k
1 mF
16
Output
12
ISIavg
Iavg fltr
10
11
3.3 k
Ramp
CT Comp
14
13
47 k
CT
10 k
Freq Cntr
2.5 V
3.3 k
NCP1650
3
4
5
6
7
8
9
Pmax
GND
15
Iavg fltr
16
Output
12
ISIavg
Iavg fltr
10
11
Ramp
CT Comp
14
13
47 k
CT
Freq Cntr
14 V
30 k
1 mF
16
Output
12
ISIavg
1 mF
2 0.1 mF
Vref
Pmax
GND
15
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
3
4
5
6
7
8
9
14 V
2 0.1 mF
Vref
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
2 0.1 mF
0-5 V
10
11
3.3 k
Ramp
CT Comp
14
13
47 k
CT
10 k
3
4
5
6
7
8
9
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
30 k
2 0.1 mF
Vref
16
Output
12
ISIavg
Iavg fltr
14 V
1 mF
CL
10
11
Pmax
Ramp
GND
CT Comp
15
14
13
470 pF
47 k
http://onsemi.com
101
TND307
0.05 mF
16
Output
12
ISIavg
Iavg fltr
47 k
1.5 V
300
0 to -5 V
10
11
1 nF
Pmax
Ramp
GND
CT Comp
15
14
13
10 k 470 pF
10 k
0.1 mF
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
1 mF
14 V
1 mF
650
16
Output
12
IS10
Iavg
11
Iavg fltr
Pmax
Ramp
GND
CT Comp
15
14
13
470 pF
47 k
3.3 k
10
15 k
3
4
5
6
7
8
9
2
Vref
NCP1650
3
4
5
6
7
8
9
0.1 mF
14 V
2 0.1 mF
Vref
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
30 k
Adjust voltage at pin 12, and read values at pins 10 & 11.
V
1k
1.5 V
3.3 k
14 V
1 mF
6
16
Output
12
IS-
0-5 V
1k
1.5 V
Iavg fltr
Pcomp
Ramp
GND
CT Comp
15
14
13
470 pF
47 k
33 k
10 k
2 0.1 mF
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
3
4
5
6
7
8
9
Pmax
GND
15
Vref
3.3 k
Iavg fltr
14 V
16
Output
12
IS10
11
Iavg
Iavg fltr
Loop Comp
Ramp
CT Comp
14
13
470 pF
30 k
1 mF
10
11
Ramp
CT Comp
14
13
47 k
CT
14 V
1 mF
47 k
16
Output
12
ISIavg
2 0.1 mF
Vref
GND
15
30 k
10
Iavg
11
9
5
8
3
4
7
1
Vin
FB/SD
Pmax
AC Input
Pcomp
AC Comp
Ref Filter
NCP1650
Pmax
FB/SD
AC Input
Loop Comp
AC Comp
Ref Filter
2 0.1 mF
Vref
3.3 k
10 k
Freq Cntr
3
4
5
6
7
8
9
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
0-5 V
6
5
7
3
4
8
NCP1650
1
Vin
2 0.1 mF
Vref
14 V
1 mF
16
Output
12
ISIavg
Iavg fltr
10
11
Pmax
Ramp
GND
CT Comp
15 14
13
470 pF
http://onsemi.com
102
TND307
0-15 V
2 0.1 mF
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
1.5 V
NCP1650
3
4
5
6
7
8
9
Pmax
GND
15
3.3 k
1 mF
Vref
16
Output
12
IS10
11
Iavg
Iavg fltr
Ramp
CT Comp
14
13
47 k
CT
10 mA
5 mA
2 mA
3.25 k
1.5 V
3.3 k
3
4
5
6
7
8
9
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
0 mA
0.65 k 1.30 k
14 V
Pmax
GND
15
2
Vref
0.1 mF
16
Output
12
ISIavg
Iavg fltr
10
11
Ramp
CT Comp
14
13
47 k
CT
http://onsemi.com
103
1 mF
0-5 V
V
1k
1.5 V
3.3 k
6
5
7
3
4
8
Vin
Pmax
FB/SD
AC Input
Loop Comp
AC Comp
Ref Filter
NCP1650
Vref
14 V
1 mF
6
16
Output
12
IS-
0-5 V
1k
1.5 V
Iavg fltr
Pcomp
Ramp
GND
CT Comp
15
14
13
470 pF
47 k
1.5 V
3.3 k
NCP1650
3
4
5
6
7
8
9
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
Pmax
GND
15
2 0.1 mF
Vref
Iavg
Iavg fltr
14 V
1 mF
2 0.1 mF
Vref
16
Output
12
ISIavg
Iavg fltr
10
11
Loop Comp
Ramp
GND
CT Comp
15
14
13
470 pF
47 k
VCC
2 0.1 mF
1 mF
16
Output
12
IS-
9
5
8
3
4
7
3.3 k
10
Iavg
11
1
Vin
FB/SD
Pmax
AC Input
Pcomp
AC Comp
Ref Filter
3
4
5
6
7
8
9
1 nF
10
11
Ramp
CT Comp
14
13
47 k
CT
3.3 k
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
NCP1650
2 0.1 mF
NCP1650
TND307
Pmax
GND
15
Vref
14 V
1 mF
16
Output
12
ISIavg
Iavg fltr
10
11
Ramp
CT Comp
14
13
47 k
CT
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104
TND307
1.5 V
3.3 k
NCP1650
3
4
5
6
7
8
9
1
Vin
AC Comp
Ref Filter
AC Input
FB/SD
Loop Comp
Pcomp
Pmax
GND
15
2 0.1 mF
Vref
14 V
1 mF
16
Output
12
ISIavg
Iavg fltr
10
11
Ramp
CT Comp
14
13
47 k
CT
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105
TND308
Graphical Data Test
Circuits for the NCP1651
Prepared by
Alan Ball
ON Semiconductor Applications Engineering
http://onsemi.com
1.5 V
10 Ref Fltr
9
AC Input
NCP1651
11
AC Comp
8
FB/SD
14 V
1 mF
1
Output
5
IS+
Iavg
Iavg fltr
7
6
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
8
FB/SD
11
AC Comp
+
0-1 V
0.5 nF
R8
4.7 k
Iavg
Iavg fltr
1 mF
1 nF
7
6
10 Ref Fltr
9
AC Input
1
Output
5
IS+
14 V
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
12 0.1 mF
Vref
13
VCC
16
Startup
NCP1651
12 0.1 mF
Vref
13
VCC
16
Startup
APPLICATION NOTE
106
TND308
A
1.5 V
1 mF
1
Output
5
IS+
10 Ref Fltr
9
AC Input
1 nF
11
AC Comp
8
FB/SD
7
6
Iavg
Iavg fltr
10 Ref Fltr
9
AC Input
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
VCC
Startup
11
AC Comp
8
FB/SD
1.5 V
10 Ref Fltr
9
AC Input
0.1 mF
Vref
NCP1651
16
12
1
Output
5
IS+
Iavg
Iavg fltr
Iavg fltr
7
6
V
13
Iavg
1 nF
1
Output
5
IS+
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
0-500 V
12 0.1 mF
Vref
13
VCC
16
Startup
Curve
Tracer
NCP1651
NCP1651
11
AC Comp
8
FB/SD
VCC
12 0.1 mF
Vref
13
VCC
16
Startup
VCC
13
1 mF
16
12
VCC
Startup
1 nF
11
AC Comp
8
FB/SD
7
6
1.5 V
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
10 Ref Fltr
9
AC Input
0.1 mF
Vref
NCP1651
1
Output
5
IS+
Iavg
Iavg fltr
VCC
1 mF
1 nF
7
6
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
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107
TND308
13
1 mF
10 Ref Fltr
9
AC Input
Iavg fltr
7
6
1 mF
4.7 k
11
AC Comp
8
FB/SD
10
Ref Fltr
9
AC Input
VCC
NCP1651
Startup
Iavg
Iavg fltr
Iavg
Iavg fltr
7
6
0.5 nF
4.7 k
Energize the 14 volt bias supply, and then the other two
supplies on pins 8 and 9. Adjust pin 8 to about 1 volt, then
reduce the 14 volt supply to 8 volts and back up to 14. This
will start the chip operating. Adjust the supplies on pins 8
and 9, and measure the voltage on pin 10.
12 0.1 mF
Vref
13
VCC
16
Startup
Ccharge
Vref
1
Output
5
IS+
1 mF
0.1 mF
14 V
1
Output
5
IS+
Ramp
GND
CT Comp
2
3
4
0-5 V 470 pF
47 k
13 12
10 Ref Fltr
9
AC Input
0.5 nF
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
+ 50 Vdc 16
11
AC Comp
8
FB/SD
0-5 V
0.1 mF
Vref
NCP1651
VCC
16
Startup
1
Output
5
IS+
Iavg
12
1 nF
11
AC Comp
8
FB/SD
7
6
1.5 V
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
10
Ref Fltr
9
AC Input
GND
2
CT
NCP1651
NCP1651
11
AC Comp
8
FB/SD
VCC
12 0.1 mF
Vref
13
VCC
16
Startup
14 V
1 mF
1
Output
5
IS+
Iavg
Iavg fltr
7
6
Ramp
CT Comp
3
4
47 k
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108
TND308
1.5 V
10
Ref Fltr
9
AC Input
GND
2
14 V
Iavg fltr
8
FB/SD
11
AC Comp
7
6
2.5 V
Ramp
CT Comp
3
4
CT
VCC
Startup
8
FB/SD
11
AC Comp
1.5 V
10
Ref Fltr
9
AC Input
Vref
NCP1651
16
12
1
Output
5
IS+
Iavg
Iavg fltr
Iavg
Iavg fltr
7
6
47 k
0.1 mF
1
Output
5
IS+
CT
47 k
14 V
1 mF
Ramp
CT Comp
3
4
GND
2
13
10
Ref Fltr
9
AC Input
NCP1651
1
Output
5
IS+
Iavg
12 0.1 mF
Vref
13
VCC
16
Startup
1 mF
14 V
13
1 mF
16
CL
12
VCC
Startup
8
FB/SD
11
AC Comp
7
6
1.5 V
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
10
Ref Fltr
9
AC Input
GND
2
470 pF
680
Vref
NCP1651
8
FB/SD
11
AC Comp
12 0.1 mF
Vref
NCP1651
13
VCC
16
Startup
14 V
1 mF
1
Output
5
IS+
Iavg
Iavg fltr
7
6
Ramp
CT Comp
3
4
47 k
http://onsemi.com
109
TND308
1.5 V
10
Ref Fltr
9
AC Input
1
Output
5
IS+
Iavg
Iavg fltr
8
FB/SD
11
AC Comp
7
6
1.5 V
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
10
Ref Fltr
9
AC Input
14 V
1 mF
1
Output
5
IS+
Iavg
Iavg fltr
7
6
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
14 V
A
13
VCC
16
Startup
3.25 k
8
FB/SD
11 AC Comp
1.5 V
0.1 mF
12
Vref
NCP1651
0 mA
0.65 k 1.30 k
12 0.1 mF
Vref
13
VCC
16
Startup
1 mF
NCP1651
NCP1651
11
AC Comp
8
FB/SD
14 V
12 0.1 mF
Vref
13
VCC
16
Startup
1 mF
1
Output
5
IS+
10
Ref Fltr
9
AC Input
Iavg
Iavg fltr
7
6
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
http://onsemi.com
110
TND308
V
11
AC Comp
8
FB/SD
NCP1651
12 0.1 mF
Vref
13
VCC
16
Startup
RLOAD
10
Ref Fltr
9
AC Input
VCC
1 mF
1
Output
5
IS+
Iavg
Iavg fltr
7
6
Ramp
GND
CT Comp
2
3
4
470 pF
47 k
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111
AND8282/D
Implementing Cost
Effective and Robust Power
Factor Correction with the
NCP1606
http://onsemi.com
Prepared by: Jon Kraft
ON Semiconductor
APPLICATION NOTE
Introduction
PFC Preconverter
Rectifiers
AC Line
High
Frequency
Bypass
Capacitor
Converter
+
NCP1606
Bulk
Storage
Capacitor
Load
112
AND8282/D
Diode Bridge
Diode Bridge
Icoil
+
Vin
Vd
Icoil
Vin
Vd
L
+
+
IN
VOUT
IN
-
The coil current flows through the diode. The coil voltage is (VOUT Vin) and the coil current linearly decays with a (VOUT - Vin)/L slope.
(VOUT - Vin)/L
Vin/L
Icoil_pk
Vd
VOUT
Vin
If next cycle does not start
then Vd rings towards Vin
The NCP1606 offers an ideal controller for these medium power CRM boost PFC applications. A simple CRM Boost
pre-converter featuring the NCP1606 is shown in Figure 3.
LBOOST
VOUT
DBOOST
LOAD
(Ballast,
SMPS, etc.)
RZCD
ROUT1
+
AC Line
EMI
Filter
Cin
Ccomp
2
3
ROUT2
4
Ct
NCP1606
FB V
CC
Ctrl DRV
Ct
GND
CS ZCD
VCC
8
+
CBULK
7
6
5
RSENSE
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113
AND8282/D
winding limits the current into this pin. Additionally, by
pulling this pin to ground, the drive pulses are disabled and
the controller is placed in a low current standby mode.
The NCP1606 features a powerful output driver on pin 7.
This driver is capable of switching the gates of large
MOSFETs in an efficient manner. The driver incorporates
both active and passive pulldown circuitry to prevent the
output from floating high when VCC is off.
Pin 8 (VCC) powers the controller. When VCC is below its
turn on level (VCC(on), typically 12V), the current
consumption of the part is limited to < 40mA. This gives
excellent startup times and reduces standby power losses.
Alternatively, VCC can also be directly supplied from
Table 1.
AND8123
AND8016
AND8154
HBD853
*Additional resources for the design and understanding of CRM Boost PFC circuits available at www.onsemi.com.
VacLL
88
VRMS
VacHL
264
VRMS
Line Frequency
fLINE
47-63
Hz
VOUT
400
VOUT(max)
440
POUT
100
fSW(min)
50
kHz
92
OUT
2
* Vac @ h
(eq. 1)
T ON(max) +
Vac 2 @ h
Vac @ 2
@ 1*
V OUT
2 @ L @ P OUT
2 @ L @ P OUT
+ 11.0ms
h @ Vac LL 2
(eq. 3)
Icharge @ T ON(max)
V CT(max)
2 @ P OUT @ L @ I charge
h @ Vac RMS 2 @ V CT(max)
(eq. 4)
(eq. 2)
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114
AND8282/D
DESIGN STEP 4: Determine the ZCD Turns Ratio
* V in
N B : N ZCD
DRIVE
VOUT
Drain
(eq. 5)
V OUT * V in
N B : N ZCD
VZCD(off)
Winding
(eq. 6)
V OUT * Vac HL @ 2
+ 12.7
V ZCDH
VZCD(on)
5.7 V
2.3 V
1.6 V
ZCD
0.6 V
(eq. 7)
NB
Vin
NZCD
+
+
VDD
+
-
VCL-NEG
Active
Clamp
RSENSE
2.3 V
DRIVE
S
Q
Reset
Dominant
Latch
R
Q
Demag
1.6 V
ZCD
RZCD
+
VCL-POS
Clamp
Shutdown
200 mV
Vac HL @ 2
+ 14.9kW
I CL_NEG @ (N B : N ZCD)
(eq. 8)
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115
(eq. 9)
AND8282/D
or IOVP = 10 mA (for NCP1606B)
Therefore, to achieve the desired maximum output
voltage with the NCP1606B, ROUT1 is equal to:
R OUT1 +
V OUT(max) * V OUT(nom)
I OVP
VCC(on)
VCC(off)
(eq. 10)
VOUT
VOUT(nom)
FB
2.5 V
VUVP
(eq. 11)
VEAH
VEAL
UVP
UVP Wait
UVP Wait
If the open loop event occurs after startup, then the fault
may not be detected immediately. This is because the error
amplifiers regulates the control pin to achieve 2.5 V on the
FB pin. Therefore, the FB voltage can only drop once the
maximum control pin voltage is achieved. When the FB
voltage drops below the UVP threshold, then the
undervoltage fault will be entered. The situation is depicted
in Figure 7.
P OUT
(eq. 12)
C bulk @ 2 @ p @ f LINE @ V OUT
VCC
VCC(on)
VCC
VCC(off)
R OUT1 ) R OUT2
@ V UVP + 48.0V (eq. 13)
R OUT2
VOUT
VOUT(nom)
ROUT1 is Opened
FB
2.5 V
VUVP
VEAH
Control
VEAL
UVP
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116
AND8282/D
DESIGN STEP 6: Size the Power Components
2 @ P OUT
+ 1.43A
3 @ Vac @ h
LL
T start +
R start
2 @p2 @
(eq. 15)
(eq. 16)
P OUT
h @ Vac LL @ V OUT
+ 0.73A
3. The MOSFET, M1
P OUT
I M(rms) + 4 @
3
h @ Vac LL
1*
8 @ 2 @ Vac LL
3 @ p @ V OUT
(eq. 17)
LBOOST
RZCD
+ 1.50A
R1
D1
Ipeak
+ 0.14W(B)or0.49W(A)
D2
RSTART
NCP1606
FB V
CC
Ctrl DRV
Ct
GND
Cs ZCD
1
+
IAUX
C1
V CS(limit)
(eq. 21)
* I CC(startup)
(eq. 14)
C Vcc @ V CC(on)
Vac (rms)@2
Cin
(eq. 18)
8
7
6
+
CVCC
(eq. 19)
(eq. 20)
32 @ 2 @ P OUT 2
* (I LOAD(rms)) 2 + 0.69A
9 @ p @ Vac LL @ V OUT @ h 2
DV C1 +
V OUT * V CC
N : N ZCD
(eq. 22)
V OUT * V CC
(eq. 23)
N : N ZCD
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117
AND8282/D
load case and instruct the PFC to shut down (Figure 9). The
NCP1606 is compatible with this type of topology, provided
Dboost
+
Cbulk
8
2
3
4
NCP1606
PFC_Vcc
1
+
VCC
+
NCP1230
DBYPASS
Vin
NTC
Vin
+
NCP1606
+
NCP1606
VOUT
Vac
VOUT
Vac
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118
AND8282/D
150
10 G20
4 @ p @ f LINE @ R OUT1
Phase Shift ()
90
60
Gain (dB)
1
s @ R OUT1 @ C COMP
G(s) +
120
30
(eq. 25)
1
0
100
10
f (Hz)
As shown in Figure 12, a type 1 compensation network provides no phase boost to improve stability. For resistive loads, this
may be sufficient (Figure 13). But for constant power loads, such as SMPS stages, the phase margin can suffer (Figure 14).
Mag [B/A] (dB)
40
80
32
70
24
16
60
16
60
50
50
40
40
-8
30
-8
20
-16
10
-24
-32
-10
-40
32
24
Gain
-16
Phase
Margin = 30
-24
-32
Phase
-40
1
10
f(Hz)
100
70
30
Gain
20
10
Phase
Margin = 17
Phase
-10
1
80
10
f(Hz)
100
If greater system stability is required, then a type 2 compensation network can be implemented. In this setup, a resistor and
capacitor are placed in parallel with CCOMP (Figure 15).
VOUT
ROUT1
E/A
FB
+
+
ROUT2
2.5 V
CCOMP2
RCOMP2
CCOMP
VCONTROL
Control
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119
AND8282/D
The transfer function for the error amplifier is now:
1 ) s @ R COMP2 @ C COMP2
G(s) +
@C
COMP COMP2
C
)C
COMP
COMP2
C
This gives a pole at 0 Hz, a zero at fZ (eq 27), and another pole at fP (eq 28).
f Z +
1
2 @ p @ R COMP2 @ C COMP2
(eq. 27)
f P + f Z @
Phase Shift ()
60
120
Gain (dB)
30
10
C COMP ) C COMP2
C COMP
(eq. 28)
32
72
24
54
16
8
36
Phase
Phase
Margin = 32
18
0
-18
-8
-16
-24
-32
0
100
150
90
(eq. 26)
-40
Gain
-36
-54
-72
-90
10
100
f (Hz)
f (Hz)
Ch A
Isolation Probe
Ch B
Isolation Probe
Network Analyzer
VOUT
LBOOST
Isolator
1 kW
RZCD
ROUT1
+
AC Line
EMI
Filter
Cin
2
3
ROUT2
4
Ct
FB V
CC
Ctrl DRV
Ct
GND
Cs ZCD
LOAD
VCC
+
COUT
7
6
5
RSENSE
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120
AND8282/D
Simple Improvements for Additional THD Reduction
LBOOST
Vin
I+
V in
R CTUP
+
Cin
VDD
RCTUP
VCONTROL
AC Line
PWM
+
ICHARGE
Ct
DRV
Ct
VEAL
Figure 20. Add RCTUP to Modify the On Time and Reduce the Zero Crossing Distortion
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121
TON
AND8282/D
Therefore, the Ct capacitor can be increased in size so that
the on time is a little longer near the zero crossing
(Figure21). This also reduces the frequency variation over
the ac line cycle. The disadvantage to this approach is the
Vac(t)
with RCTUP
TON
no RCTUP
no RCTUP
with RCTUP
fSW
time
Figure 21. On Time and Switching Frequency With and Without RCTUP
The effect of this resistor on THD and power factor is illustrated in Figure 22.
25
THD (%)
20
15
Rctup = open
10
Rctup = 1.5 MW
5
0
85
115
145
175
205
235
265
Vac (Vrms)
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122
AND8282/D
VCONTROL
Control
ISWITCH
VDD
ICHARGE
Ct
VCT(off)
RCT
DRIVER
PWM
+
VGATE
DRV
RDRIVE
DRV
RSENSE
VEAL
Ct
However, there is some delay before the MOSFET fully turns off. This delay is created by the propagation delay of the PWM
comparator and the time to bring the MOSFET's gate voltage to zero (Figure 24).
The total delay, tDELAY, is summarized in eq 29:
CT(off)
(eq. 29)
CT
tPWM
Dt + Ct @
VGATE
DV RCT
+ Ct @ R CT
DI RCT
ISWITCH
50
40
THD (%)
Rct = 0 W
30
20
Rct = 300 W
10
0
30
(eq. 30)
tGATE
tDELAY
25
t DELAY
Ct
35
40
45
Pout (W)
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AND8282/D
Design Results
The completed demo board schematic using the NCP1606B is shown in Figure 26.
Rstart1
Bridge
180 mH
F1
Fuse
4.7 mH
L1
C1
0.47 mF
Vac
Cin
0.1 mF
C2
L2
Rstart2
330 kW
LBOOST 390 mH
Rctup1
750 kW
330 kW
MUR460
DBOOST
R1 C3
Aux
10:1
Rctup2
750 kW
100 W 22 nF
Daux
Ccomp1
0.39 mF
0.47 mF
NCP1606B
1
8
Rcomp2
U1
Ccomp
54.9 kW
2
7
0.1 mF
3
6
Rct
5
4
Short
Ct2
0.33 nF
Ccs
Open
Ct1
1.2 nF
CBULK
68 mF
450 V
Q1
SPP12N50
Rdrv
Cvcc2
100 nF
VOUT
4.7 W
ROUT1A
2 MW
ROUT1B
2 MW
RZCD
100 kW
D2
18 V
NTC
10 W
ROUT2
24.9 kW
Cvcc
47 mF
Rcs
Rs1
0.1 W
1W
510 W
The bill of materials (BOM) and layout drawings are shown in Appendix 1 and 2, respectively. This pre-converter exhibits
excellent THD (Figure 27), PF (Figure 28), and efficiency (Figure 29).
20
1.00
18
0.98
16
12
PF
0.96
10
8
0.94
Pout = 100 W
6
4
0.92
2
0
0.90
85
115
145
175
205
235
265
85
115
145
175
205
235
Vac (Vrms)
Vac (Vrms)
96
95
Pout = 100 W
EFFICIENCY (%)
THD (%)
14
Pout = 100 W
Pout = 50 W
Pout = 50 W
94
93
92
Pout = 50 W
91
90
85
115
145
175
205
235
265
Vac (Vrms)
Figure 29. Efficiency vs. Input Voltage at Full Load and 50% Load
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The input current and resultant output voltage ripple is shown in Figure 30. The overvoltage protection scheme can be
observed by starting up the pre-converter with a light load on the output (Figure 31). The OVP activates at about 440 V and
restarts at about 410 V.
OVP Activated at 440 V
VCC (5 V/div)
Iin (1 A/div)
If the NCP1606A is to be used instead, then changes to ROUT1, ROUT2, RSENSE, and the compensation components are
necessary. Figure 32 shows the schematic of the 100 W board for the NCP1606A. The changes are highlighted in red.
Rstart1
Bridge
180 mH
F1
Fuse
Vac
Cin
4.7 mH
L1
C1
0.47 mF
C2
L2
0.1 mF
Rstart2
330 kW
LBOOST 390 mH
Rctup1
750 kW
Rctup2
750 kW
R1 C3
Aux
10:1 100 W 22 nF
Daux
330 kW
MUR460
DBOOST
D2
18 V
RZCD
100 kW
Ccomp1
1 mF
0.47 mF
NCP1606A
1
8
Rcomp2
U1
Ccomp
20 kW
2
7
270 nF
3
6
Rct
5
4
Short
Ct2
0.33 nF
Ct1
1.2 nF
Ccs
Open
Rdrv
Cvcc2
100 nF
10 W
Cvcc
47 mF
Rcs
510 W
Rs2
0.806
NTC
4.7 W
ROUT1A
500 kW
ROUT1B
500 kW
Q1
SPP12N50
VOUT
CBULK
68 mF
450 V
ROUT2
6.19 kW
Rs1
0.806
1W
1W
This demo board can be configured in a variety of ways to optimize performance. Table 2 gives some results with a few of
these configurations. The data confirms that the addition of Rctup has a beneficial effect on the THD. Additionally, the B
version exhibits superior standby power dissipation due to its reduced thresholds on IOVP. It also shows improved active mode
efficiency at low line. This is because it uses a smaller VCS(limit) level (0.5 V typical), which decreases the Rsense power
dissipation by about 70%. This reduction in power consumption is most noticeable at low line, where peak currents are the highest.
Table 2. Summary of key parameters for different variations of the demo board.
Efficiency @ 100 W
THD @ 100 W
RCTUP
Ct
115 Vac
60 Hz
230 Vac
50 Hz
115 Vac
60 Hz
230 Vac
50 Hz
1.0 MEG
open
1.2 nF
321 mW
92.5%
94.9%
8.1%
15.1%
1.0 MEG
1.5 MEG
1.5 nF
391 mW
92.5%
94.8%
4.5%
7.4%
4.0 MEG
open
1.2 nF
217 mW
93.0%
94.9%
8.0%
13.3%
4.0 MEG
1.5 MEG
1.5 nF
288 mW
93.0%
94.8%
3.7%
8.9%
Version
ROUT1
A
A
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Appendix 1: Bill of Materials (BOM)
Designator
Qty.
Description
Value
Manufacturer
Part #
U1
NCP1606B
PDIP
ON Semiconductor
NCP1606B
D1
100 V, SOD123
ON Semiconductor
MMSD4148T1G
Daux
Zener diode
18 V, 5%
ON Semiconductor
MMSZ4705T1
Dboost
Ultrafast diode
4 A, 600 V
ON Semiconductor
MUR460RLG
Bridge
2 A, 600 V
Vishay
2KBP06M-E4/1
C1, C2
X cap
EPCOS
B81130C1474M
Cin
X cap
EPCOS
B32921A2104M
Cbulk
68 mF, 450 V
Panasonic
ESMG451ELL680MN35S
Cvcc
47 mF, 25 V
Panasonic
EEU-FC1E470
C3
SM 1206 capacitor
22 nF, 10%, 25 V
Ccomp
SM 1206 capacitor
Ccomp2
SM 1206 capacitor
Ccs
SM 1206 capacitor
open
Ct1
SM 1206 capacitor
Cvcc2
SM 1206 capacitor
L1
Input Inductor
180 mH
Coilcraft
PCV-2-184-05L
L2
Line Filter
Panasonic
ELF-20N027A
Lboost
Coilcraft
FA2890-AL
NTC
4.7 W, 20%
EPCOS
B57238S479M
Q1
11.6 A, 560 V
Infineon
SPP12N50C3X
R1
SM 1206 resistor
100 W
Rcomp2
SM 1206 resistor
54.9 kW
Rct
SM 1206 resistor
short, 1%
Ro1a, Ro1b
SM 1206 resistor
2 MW
Rout2
SM 1206 resistor
24.9 kW
Rdrv
SM 1206 resistor
10 W
Rs1
0.100 W, 1 W, 1%
KOA
SR733ATTER100F
Rcs
510 W, 5%
Yageo
CFR-25JB-510R
Rctup1, Rc
tup2
750 kW, 5%
Yageo
CFR-25JB-750K
Rstart1,
Rstart2
330 kW, 5%
Yageo
CFR-25JB-330K
Rzcd
100 kW, 5%
Yageo
CFR-25JB-100k
F1
Fuse
2.5 A, 250 V
Littelfuse
37312500430
Connector
MOLEX
26-60-4030
Socket
Mill Max
110-99-308-41-001000
Mechanical
Heatsink
Aavid
590302B03600
Mechanical
Screw
Building Fasteners
Mechanical
Nut
Building Fasteners
HNSS440
Mechanical
Nylon Washer
Shoulder washer #4
Keystone
3049
Mechanical
9 mil
Wakefield
173-9-240P
Mechanical
Standoffs
Keystone
4804k
Mechanical
Nylon Nut
Hex 4-40
Building Fasteners
NY HN 440
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Appendix 2: Layout Drawings
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Appendix 3: Summary of Boost Equations for the NCP1606
RMS Input Current
2 @ 2 @ P OUT
h @ Vac LL
I pk(max) +
Inductor Value
2 @ Vac 2 @
Lv
OUT
2
* Vac
Off Time
V
OUT
Vac (rms)@sin(q)@2
Vac (rms) 2 @ h
2 @ L @ P OUT
Ct w
1*
*1
2 @ P OUT @ L @ Icharge
R ZCD w
V OUT * Vac HL @ 2
V ZCDH
Vac HL @ 2
I CL_NEG @ (N B : N ZCD)
V OUT + 2.5V @
R OUT1 ) R OUT2
R OUT2
V OUT(max) * V OUT(nom)
I OVP
2.5V @ R OUT1
R OUT2 +
V OUT(nom) * 2.5V
V OUT
(UVP)
P OUT
C bulk @ 2 @ p @ f line @ V OUT
Icoil RMS +
Id MAX(rms) + 4 @
3
R OUT1 ) R OUT2
@ V UVP
R OUT2
Vripple (pk-pk) +
2 @ P OUT
3 @ Vac @ h
LL
2 @p2 @
P OUT
I M(rms) + 4 @
3
h @ Vac LL
N B : N ZCD v
t ON
t OFF +
Pin 3 Capacitor
2 @ L @ P OUT
h @ Vac LL 2
t ON(max) +
f SW +
Maximum On Time
Frequency
P OUT
h @ V ac(rms)
I ac(rms) +
P OUT
h @ Vac LL @ V OUT
1*
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8 @ 2 @ Vac LL
3 @ p @ V OUT
AND8282/D
Appendix 3: Summary of Boost Equations for the NCP1606
MOSFET Sense Resistor
R sense +
V CS(limit)
Ipk
Type 1 CCOMP
I C(rms) +
32 @ 2 @ P OUT 2
* (ILOAD(rms)) 2
9 @ p @ Vac LL @ V OUT @ h 2
C COMP +
10 G20
4 @ p @ f line @ R OUT1
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Implementing the NCP1605
to Drive the PFC Stage of a
19 V / 8 A Power Supply
Prepared by: Joel Turchi
ON Semiconductor
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APPLICATION NOTE
Forward or half-bridge converters take a significant
advantage of a narrow input voltage range. In such
applications, the PFC stage is wished to start first and to keep
on as long as the power supply is plugged in. Optimally, the
downstream converter should turn on when the output of the
PFC stage is nominal. In other words, the PFC must be the
master
The NCP1605 is specially designed for these applications.
It features a pfcOK pin to enable the downstream
converter when the PFC stage is ready for operation.
Practically, it is in high state when the PFC stage is in steady
state and low otherwise (fault or start-up condition). In
addition, the PFC stage having to still remain active in light
load conditions, the NCP1605 integrates the skip cycle
capability to lower the stand-by losses to a minimum.
Rbo1
Rout2
Vout
Rout1
Cbo
Rovp1
Rbo2
CVctrl
Rzcd
AC Line
Rocp
Ct
EMI
Filter
Vin
VCC
16
15
14
13
12
11
10
Icoil
+
CVCC
Rdelay
D1
Icoil
Vout
Cdelay
CVref
VCC
M1
LOAD
pfcOK
Cosc
Cin
L1
Rovp2
Rdrv
Cbulk
Rcs
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AND8281/D
Introduction
The NCP1605 is a PFC driver designed to operate in fixed
frequency, Discontinuous Conduction Mode (DCM). In the
most stressful conditions, Critical Conduction Mode (CRM)
can be achieved without power factor degradation and the
circuit could be viewed as a CRM controller with a
frequency clamp (given by the oscillator). Finally, the
NCP1605 tends to give the best of both modes without their
respective drawbacks. Furthermore, the circuit incorporates
protection features for a rugged operation together with
some special circuitry to lower the power consumed by the
PFC stage in no load conditions. More generally, the
NCP1605 functions make it the ideal candidate in systems
where cost-effectiveness, reliability, low stand-by power
and high power factor are the key parameters:
Compactness and Flexibility: the controller requires
few external components while offering a large variety
of functions. Depending on the selected coil and
oscillator frequency you select, the circuit can:
1. Mostly operate in Critical Conduction Mode and
use the oscillator as a frequency clamp.
2. Mostly operate in fixed frequency mode and only
run in CRM at high load and low line.
3. Permanently operate in fixed frequency mode
(DCM).
In all cases, the circuit provides near-unity power factor.
Skip-cycle Capability for Low Power Stand-by:
among other applications, the circuit targets power
supply where the PFC stage must keep alive even in
stand-by. A continuous flow of pulses is not compatible
with no-load standby power requirements. Instead, the
controller slices the switching pattern in bunch of
pulses to drastically reduce the overall losses. The skip
cycle operation is initiated by applying to pin 1, a signal
that goes below 300 mV in stand-by. Typically, this
signal is drawn from the feed-back of the downstream
converter.
Start-up Current Source and Large VCC Range:
meeting low stand-by power specifications represents a
difficult exercise when the controller requires an
external, lossy resistor connected to the bulk capacitor.
The controller disables the high-voltage current source
after start-up which no longer hampers the
consumption in no-load situations. In addition, the
large VCC range (10 V to 20V after start-up), highly
eases the circuit biasing.
Fast Line / Load Transient Compensation: given the
low bandwidth of the regulation block, the output
voltage of PFC stages may exhibit excessive over and
under-shoots because of abrupt load or input voltage
variations (e.g. at start-up). If the output voltage is too
far from the regulation level:
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Design of the PFC Stage
Power Components
T cycle + T on ) T demag +
(eq. 3)
u T osc
(eq. 4)
(eq. 5)
4 @ P IN,AVG @ V out
In our application,
Tosc = 7.5 ms (133 kHz)
V
= 127 V ( 2 @ 90V)
in,pk
Vout = 390 V
PIN,AVG = 190 W (80% global efficiency)
Hence,
L u 7.5 @
(P IN,AVG) max
(eq. 6)
V IN,rms,LL
Coil Selection
P in,av
V in,rms
(P IN,AVG) max
I coil,rms + 2 @
3
V IN,rms,LL
T on +
L @ I coil,pk
V in
(eq. 7)
(eq. 1)
2
P in,av
8 @ 2 @ V in,rms
4
(eq. 8)
p on + @ R dsON @
@ 13
V in,rms
3p @ V out
(eq. 2)
L @ I coil,pk @ V out
V in @ (V out * V in)
Hence, the losses are maximal at low line and full load. In
our application, we can evaluate them as follows:
L @ Icoil,pk
V out * V in
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@ 1*
8 @ 2 @ 90
^ 4.3 @ R dsON (eq. 9)
3p @ 390
AND8281/D
Bulk Capacitor
(eq. 10)
h @ (P IN,AVG) max
(eq. 11)
C BULK @ w @ V OUT,nom
94% @ 190
+ 37mF
5% @ 2p @ 100 @ 390 2
(eq. 12)
R12
D2
1N4148
47
R13
2.2
Q2
BC369
M1
PFC MOSFET
C BULK w
R10
10 k
(eq. 13)
I C,rms +
(eq. 14)
P IN,AVG 2
h PFC @ P IN,AVG
32 @ 2
@
*
9p
V IN,rms @ V OUT,nom
V OUT,nom
(eq. 15)
We will consider that hPFC (hPFC is the PFC efficiency) is 94% in the most severe conditions where this rms current is
maximal (low line, full load). Finally:
I C,rms +
2
32 @ 2
@ 190
* 94% @ 190
9p
90 @ 390
390
840pF
@ 60kHz
C pin8 ) 20pF
(eq. 17)
Brown-out Circuitry
840pF @ 60kHz
* 20pF
fOSC
(eq. 18)
Vin
AC Line
Rbo1
EMI
Filter
Cin
Rcs
(eq. 19)
1 V/0.5 V
BO
Rbo2
Cbo2
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+
-
BO_NOK
AND8281/D
As sketched by Figure 37, a portion of the average input
voltage should be applied to pin2. The NCP1605 incorporates
a comparator to monitor Vpin2 and inhibits the circuit when
this voltage is lower than the internal brown-out threshold.
More specifically, the internal comparator features a 50%
hysteresis (VBOL = 50% VBOH) to take into account the
change in the input voltage average level:
1. Before operation, the PFC stage is off and the
input bridge acts as a peak detector (refer to
Figure38). As a consequence, the input voltage is
approximately flat and nearly equates the ac line
amplitude. Hence, the voltage applied to pin 2 is:
V pin2 + 2 @ V in,rms @
2 @ 2 @ V in,rms
Rbo2
,
p
Rbo1 ) Rbo2
Rbo2
.
Rbo1 ) Rbo2
Rbo2 + 56kW
Rbo1 + 56k @ 2 @ 85 ^ 6732kW
Cbo + 220nF
(eq. 20)
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Vbulk (PFC Stage Output)
Rfb1
pin4
+
to PWM Section
Rfb2
+
Vref
2.5 V
pin3
Ccomp1
C2
Rcomp1
Figure 39. Regulation Trans-conductance Error Amplifier, Feed-back and Compensation Network
Computation of the Feed-back / Regulation External
Components
(eq. 23)
V out,nom
*1
V REF
(eq. 27)
(eq. 26)
Rfb1 + Rfb2 @
V out,nom
Rfb2
@ V out,nom + V REF Rfb1 +
*1
Rfb2
V REF
Rfb1 ) Rfb2
Rfb2 +
(eq. 25)
Rfb2 + 27kW
(eq. 28)
(eq. 29)
(eq. 24)
V out,nom + Rfb1 ) Rfb2 @ V REF + 1800k ) 1800k ) 560k ) 27k @ 2.5V + 387.7V
Rfb2
27k
(eq. 30)
Compensation:
The NCP1605 integrates the Follower Boost by making the charge current of the timing capacitor, a function of the squared
output voltage. Based on the data-sheet equations and neglecting the zero resulting from the ESR of the bulk capacitor, a small
signal analysis would lead to the following transfer function of the PFC stage:
V OUT
+ Rfb1 ) Rfb2
V REGUL
Rfb2
Where:
CBULK is the bulk capacitor
ROUT is the load equivalent resistance
Cpin7 is the pin7 external capacitor
L is the PFC coil inductance
Rfb1 and Rfb2 are the feed-back resistors
1) s@
1
R
OUT
@C BULK
4
(eq. 31)
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AND8281/D
V REGUL
R fb2 @ G EA
+
V OUT
s @ 3 @ (R fb1 ) R fb2) @ C 2
(eq. 32)
Where:
GEA is the trans-conductance gain of the error
amplifier (200 mS, typically)
C2 is the compensation capacitor (see Figure 39)
Rfb1 and Rfb2 are the feedback resistors (see Figure 39)
Hence, we have them the following pole:
f p1 +
1
6p @
(R fb1)R fb2)
R fb2@GEA
(eq. 33)
@ C2
6p @
1
(4160k)27k)
@ 680n
27k@200m
^ 0.1Hz
corner frequency.
1. The circuit does not enable the under-shoots limitation function during the start-up sequence of the PFC stage but only once the converter
has stabilized (that is when the pfcOK signal of the block diagram, is high). This is because, at the beginning of operation, the pin3 capacitor
must charge slowly and gradually for a soft start-up.
Vin
Rzcd
Icoil
AC Line
6
EMI
Filter
VDD
Cin
D1
L1
CSout
100 mV
ZCD
+
-
VCC
Current Mirror
VDD
Ics
Ics
M1
Output
Buffer
outON
10
DRV
Cbulk
S
LdT
Vzcd
Rocp CSin
RSENSE
DT
Q
OCP
(RESET of the PWM Latch)
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AND8281/D
In practice, we will use (RSENSE = 0.1 W) and hence, since
the maximum coil current is 6 A (see inductor computation):
R CS
I
R OCP COIL
R OCP + 0.1 @
(eq. 35)
R OCP
250mA
R SENSE
(eq. 36)
(eq. 37)
P in,av
4 @ R SENSE
PR SENSE +
@
3
V in,rms
(P in,av)max
(eq. 38)
(V in,rms) min
(eq. 39)
I COIL,MAX
250mA
2
(eq. 45)
R SENSE + 100mW
(eq. 46)
R OCP + 2.4kW
(eq. 47)
R ZCD + 7.2kW
(eq. 48)
R DRV + 22kW
(eq. 49)
(eq. 41)
R DRV + 3 @ R ZCD
Over-Voltage Protection
(eq. 40)
And:
R OCP + R SENSE @
(eq. 44)
Finally:
(V in,rms) min 2
R SENSE + 3 @ a @
4
(P in,av) max
R ZCD + 3 @ R OCP
(eq. 43)
6A + 2.4kW
250mA
(eq. 42)
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Vout (Bulk Voltage)
Rout1
Rout3
Rout2
1
FB
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
Rout1
OVP
FB
Rout2
Rovp2 +
(eq. 50)
Rovp2 + 27kW
(eq. 51)
(eq. 54)
Rovp1 + Rovp2 @
V OVP
*1
V REF
(eq. 55)
(eq. 52)
Rovp2 + 27kW
(eq. 56)
Rovp1 ) Rovp2
@ V REF + 1800k ) 1800k ) 820k ) 27k @ 2.5V ^ 412V (eq. 58)
Rovp2
27k
(eq. 53)
Rovp2
V REF
+ 25kW
100mA
Rovp1
OVP
2
3
4
5
6
7
8
HV
16
15
14
13
12
11
10
9
Where:
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AND8281/D
- VOUT,nom is the output regulation voltage. This level is
set to about 390 V typically.
Equation (59) illustrates that as any voltage mode
controller, the timing capacitor (CPIN7) adjusts the power.
Multiplying IIN by VIN and averaging the result over the
line period, the mean input power is deducted as follows:
P IN,AVG +
C pin7 +
C pin7 @ V OUT,nom 2
750m @ L @ V OUT 2
@ V IN,rms 2
(eq. 61)
Now, as
V OUT,nom +
R fb1 ) R fb2
@ V REF
R fb2
)R
fb1
fb2
fb2
V OUT,nom 2
(V IN,RMS) LL 2
Feeding Circuitry
(eq. 63)
R fb1 ) R fb2
@ V REF
R fb2
(eq. 66)
Noting that ,
V OUT,nom +
(eq. 65)
(eq. 64)
In our case,
- L = 150 mH
- (PIN,AVG)max = 190 W
- (VIN,RMS)LL = 90 V
- VREF = 2.5 V
Hence:
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AND8281/D
forward side (C28 being charged up to almost 30 V), allows
Vbulk
X31
IRF840
1N4934
D12
MUR160E
R44
2.2
D15
C28
100 mF/50 V
R31
10 k
D13
MUR160E
T2
Q7
BC368
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
D9
16 V
D8
1N4148
VCC
To the
NCP1217A
VCC Pin
NCP1605
X24
IRF840
R25
0.33/3 W
C1
VCC Capacitor
Downstream Converter
Rectified ac Line
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
HV
+
Downstream
Converter
Controller
(NCP1217A)
VCC
NCP1605
R28
Stand-by
Input
Voltage
R18
Feed-back of the
Downstream Converter
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140
AND8281/D
In normal operation, the circuit controls the continuous
absorption of the line current necessary for matching the
load power demand. Instead, when the voltage applied to
pin1 goes below 300 mV:
- The output pulses are blanked and pin3 (VCONTROL)
is grounded,
- The output of the PFC stage being not fed any more, it
drops. When the output voltage goes below 95.5% of
the regulation level, the circuit resumes operation until
FLAG1 becomes low (what means that the output
voltage has exceeded the regulation level).
- At that moment, if Vpin1 is still below 300 mV, a new
skipping phase starts.
In other words, instead of continuously providing the
output with a small amount of power, the circuit operates
from time to time at a higher power level. As an example and
to make it simple, instead of continuously supplying 1% of
PMAX, the circuit can provide the load with 10% of PMAX for
10% of the time. The IC enters the so-called skip cycle mode
that is much more efficient compared to a continuous power
flow as it drastically reduces the number of pulsations and
therefore the switching losses associated to them. Figure45
portrays this operation mode.
Remarks:
This technique that is based on the monitoring of the
downstream converter feed-back, makes the PFC stage
enter the skip mode at a very stable power level over
the input voltage range.
When in skip mode, each working phase of the PFC
stage, starts smoothly as pin3 is grounded at the
beginning of it. This soft-start capability is effective to
avoid the audible noise that could possibly result from
such a burst operation.
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141
AND8281/D
- Incorrect feeding of the circuit (UVLO high
when VCC < VCCOFF, VCCOFF equating 9V
typically).
- Excessive die temperature detected by the
thermal shutdown.
- Under-Voltage Protection.
- Too repetitive Over-Voltage conditions leading
to the circuit shutdown (STDWN of the block
diagram turns high).
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142
AND8281/D
The signal pfcOK is low when the PFC stage is not in nomin
al operation (start-up, fault conditions) and high (5 V) when it
is ok for operation.
Vbulk
R49
22 k
D14
pfcOK
NCP1217A
1
R49 is optional. It is implemented here as an additional pullup resistor that increases the biasing current on the
NCP1217A feed-back pin. D14 could be removed if a resist
or R49 was implemented that is low impedance enough to
disable the controller when pfcOK is in low state.
Hence:
NP
t 42% @ 350 + 7.35
20
NS
V BULK7
V out ) V F
@
@ 7.5ms
L
V BULK7 ) V F
L ^ 19 ) 1 @ 7.5ms + 26mH
5.6
NS
@ V BULK,min u 20V
42%
NP
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143
AND8281/D
Application Schematics
Vbulk
+
C2
100 mF/450 V
D1
MUR460
M1
SPP20N60S
R42
D3
C5
100
16 V
10 nF
R11
R10
VCC
Vbulk
R9
1800 k
R20
1800 k
1k
C30
R22
1800 k
R14
1800 k
10 k
R13
2.2
C17
1 nF
pfcOK
R24
560 k
220 nF
DRV1
R12
47
R21
27 k
R23
820 k
Q2
BC369
D2
1N4148
VCC
R17
16 15 14 13 12 11 10 9
27 k
R7
0.1
NCP1605
C14
1 nF
stby
8
C4
pin6
C37
1 nF
VCC
R16
R4
1800 k
1800 k
C22
680 nF
C6
T1x
150 mH
(np/ns = 9)
220 mF
R3
1800 k
VRramp
C3
4.7 nF
330 pF
R2
150
R6
C8
R1
1800 k
62 k
2.4 k
pin6
220 nF
R15
R58
DRV1
R52
6.8 k
22 k
R8
4.7 k
C1 Type = X2
VRramp
330 nF
+
100-265 VAC
U1x
KBU6K
N
C15
C12
2.2 nF
Type = Y2
Earth
C13
2.2 nF
Type = Y2
CM1
330 nF Type = X2
Type = X2
CM2
150 mH
opt.
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144
C11
330 nF
N
F1
L
AND8281/D
Vout
C29
19 V/8 A
470 mF
C18
25 V
SGND
470 mF 25 V
C19
Vout
R27
1 mF
L1
22 mH
22 k
R30
3.3 k
C27
R35
R57
C23
470 pF
100/2 W
1k
10 nF
R29
3.3 k
MBR20100CT
X29
D7
D13
MUR160E
Vbulk
D6
T2
X31
SPP11N60
K = Np/Ns = 7;
Np/Naux = 14
Vaux2
10 k
D10
100 nF
D12
16 V
D15
1N4934
C16
2.2 nF
Type = Y2
C10
2.2 nF
Type = Y2
R38
10 k
D20
MUR160E
R25
0.33/3 W
16 V
R33
10
R40
10
Vz
BC368
Q6
X25
VCC
2.2
TL431
X24
SPP11N60
800 mH
D18
R44
SGND
FB
R37
Vaux2
SFH615A-4
X30
STRAP
C32
100 nF
BC368
Q5
R50
R56
0R
BC369
Q1
10
DRV2
C28
1N4148
Vz
R31
10 k
VCC
VCC
1 mF
C20
C31
Vbulk
7
D9
R55
10 k
R39
47
D8
BC368
Q7
1 mF
R51
100 mF/50 V
D5
3V0
Q1x
BC846B
FB
220 mF
Circuitry for
Over-Load
Protection
FB
PFC
Skip-Mode
Control
C35
1 nF
R49
R43
1k
C34
6.8 k
pfcOK
1k
R1x
43 k
NCP1217A
16 V
C26
D14
1N5817
1 nF C33
R46
1 nF
22 k
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145
FB
R18
R5
47 k
22 k
stby
AND8281/D
Bill of Materials
CM1
CM CHOKE
B82734-R2322-B30
EPCOS
CM2
DM CHOKE
Wurth Electronik
330 nF X2 Capacitor
PHE840MY6330M
RIFA
C2
BC Components
C3
CMS Capacitor
4.7 nF
various
C4
CMS Capacitor
330 pF
various
CMS Capacitor
220 nF
various
C6, C31
Electrolytic Capacitor
220 mF / 25 V
various
CMS Capacitor
1 nF
various
C27
CMS Capacitor
470 pF
various
2.2 nF Y2 Capacitor
DE2E3KH222MA3B
muRata
C18, C29
electrolytic Capacitor
UPM1E471MPD
Nichicon
C19, C20
CMS Capacitor
1 mF
various
C22, C26
CMS Capacitor
680 nF
various
C23
CMS Capacitor
10 nF
various
C28
Electrolytic Capacitor
100 mF / 50 V
various
C32
CMS Capacitor
100nF
various
D10
100 nF
various
C38
CMS Capacitor
330 nF
various
D1
PFC Diode
MUR460RLG
ON Semiconductor
D2, D8
DO-35 Diode
1N4148
various
D14
Schottky Diode
1N5817
ON Semiconductor
D3, D9
16 V Zener Diode
1N5930
ON Semiconductor
D18, D20
16 V Zener Diode
BZX84C16LT1, G
ON Semiconductor
D16
16 V Zener Diode
BZX79-C3V0
ON Semiconductor
D6, D7
MBR20100CT
ON Semiconductor
D12, D13
Demagnetization Diodes
MUR160RLG
ON Semiconductor
D15
Rectifier
1N4934RLG
ON Semiconductor
HS1_M1, HS3_D6
Heatsink
KL195/25.4SW
Schaffner
HS1_X31, HS2_X24
Heatsink
KL194/25.4SW
Schaffner
L1
DMT2-26-11L
26 mH Power Choke
CoilCraft
M1
PFC MOSFET
SPP20N60S5
Infineon
Q1, Q2
BC369
ON Semiconductor
Q1x
SOT23
BC846B
ON Semiconductor
Q5, Q6, Q7
BC368
ON Semiconductor
1.8 MR
various
R2
150 R
various
R12, R39
47 R
various
R6
2.4 kR
various
R7
3 W PFC CS Resistor
RLP3 0R1 1%
Vishay
R8
4.7 k
various
10 kR
various
R13, R44
2.2 R
various
R15
62 kR
various
R17, R21
27 kR
various
22 kR
various
R23
820 kR
various
R24
560 kR
various
R25
W31-R39 JI
WELWYN
10 R
various
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146
AND8281/D
Bill of Materials
R28, R55
47 kR
various
R29, R30
3.3 kR
various
R35
100 R / 4 W Resistor
SBCHE4
Meggitt CGS
1 kR
various
R42
100 R
various
R49, R52
6.8 k
various
R1x
43 k
various
T1
PFC Coil
SICO 977
Sicoenergie
T2
Forward Transformer
SICO 978
Sicoenergie
U1
Diodes Bridge
KBU6K
General Semiconductor
U2
Forward Controller
NCP1217AD133R2G
ON Semiconductor
U3
PFC Controller
NCP1605
ON Semiconductor
X25
Q3903-A
CoilCraft
X29
Opto-coupler
SFH6156-2
Infineon
X30
TL431ACDR2G
ON Semiconductor
X24, X31
Forward MOSFET
SPP11N60S5
Infineon
F1
4 A Fuse
various
various
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147
AND8084/D
NCP1650 Benchtop
Assistance
Prepared by: Alan Ball
ON Semiconductor
Applications Engineer
http://onsemi.com
APPLICATION NOTE
The NCP1650 is a high-performance, Power Factor
Correction IC. It is capable of producing a high power factor
input current waveform under continuous and discontinuous
modes of operation. It is also a highly integrated device,
and as such, requires fine tuning for optimum performance.
The purpose of this application note is to assist in
troubleshooting and fine tuning this circuit.
Troubleshooting
When troubleshooting this circuit, always use an
oscilloscope. DVM readings will not show oscillations,
spikes or other waveforms that may be helpful in
determining the cause of the problem.
Be aware that this is a non-isolated power converter that
is connected to a high-voltage, AC line. The ground of this
circuit will be at an AC potential and could pose a shock
hazard. Use an approved isolation transformer before
connecting oscilloscopes or other test equipment to this
circuit.
AND8084/D
The voltage on the power switch will exceed the output
voltage by a diode drop plus any spikes that may occur. A
good layout will keep these spikes to a minimum. Observe
the drain pin of the power switch with a wide bandwidth
oscilloscope to look for spikes. Spikes can be reduced by
adding snubbers or modifying the layout to reduce path
lengths between the inductor, drain and rectifier anode.
Noise Problems
Performance
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149
AND8084/D
How to Improve Harmonics and Distortion
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150
AND8084/D
Izhigh = 265 v x 2 x p x 60 Hz x 8.0 mF = .80 amps
I pk
IC
t on
I min
VC
Where:
Vc is the capacitor peak-to-peak voltage in volts
DI is the peak-to-peak ripple current. This can be found on
sheet 1 of the NCP1650 design spreadsheet in the P-P
Ripple Current vs. Angle graph.
T is the switching period in seconds
C is the capacitance in Farads
The capacitor on the AC side of the line should be at least
a factor of 2 greater than the capacitor on the rectified side
of the line and typically a factor of 5 or more. The capacitor
on the rectified side of the line will tend to hold up the
voltage at zero crossings, and will contribute to the
distortion in the current waveform, whereas, the capacitor
on the AC side of the line will help to filter any distortion at
the zero crossings, but will cause phase shift.
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AND8123/D
Power Factor Correction
Stages Operating in Critical
Conduction Mode
Prepared by: Joel Turchi
ON Semiconductor
http://onsemi.com
APPLICATION NOTE
Basics of the Critical Conduction Mode
Critical conduction mode (or border line conduction
mode) operation is the most popular solution for low power
applications. Characterized by a variable frequency control
scheme in which the inductor current ramps to twice the
desired average value, ramps down to zero, then
immediately ramps positive again (refer to Figures 2 and 4),
this control method has the following advantages:
Simple Control Scheme: The application requires few
external components.
Ease of Stabilization: The boost keeps a first order
converter and there is no need for ramp compensation.
Zero Current Turn On: One major benefit of critical
conduction mode is the MOSFET turn on when the
diode current reaches zero. Therefore the MOSFET
switch on is lossless and soft and there is no need for
a low trr diode.
On the other hand, the critical conduction mode has some
disadvantages:
Large peak currents that result in high dl/dt and rms
currents conducted throughout the PFC stage.
Large switching frequency variations as detailed in
the paper.
PFC Stage
Power Supply
+
AC
Line
+ Bulk
Capacitor
Controller
IN
LOAD
One generally devotes critical conduction mode to power factor control circuits below 300 W.
152
AND8123/D
Diode Bridge
Diode Bridge
+
L
Icoil
+
Icoil
Vin
Vin
IN
Vout
IN
Coil
Current
Vin/L
(Vout-Vin)/L
Icoil_pk
t Icoil u T +
Icoil_pk
2
(eq. 1)
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153
AND8123/D
t Icoil u T + k * Vin +
2
k * 2 * Vac * sin(wt)
.
2
As
PFC Stage
Vin
L1
D1
Bulk
Capacitor
Input
Filtering
Capacitor
AC Line
+
C1
X1
R7
Current Sensing
Resistor
PWM Latch
Zero Current
Detection
S
Output Buffer
+
-
Current
Envelope
Q
R
Current Sense
Comparator
R1
R2
C2
Multiplier
Error
Amplifier
R3
Vref
R4
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154
AND8123/D
Peak
Icoil_pk
Average (<Icoil>T)
Inductor Current
(Icoil)
Tac/2
(Tac is the
AC line period)
MOSFET
DRIVE
Figure 4. Coil Current
During the power switch conduction time, the current ramps up from zero up to the envelope level. At that
moment, the power switch turns off and the current ramps down to zero. For simplicity of the drawing,
only 8 current triangles are shown. Actually, their frequency is very high compared to the AC line one.
One can note that a simple calculation would show that the on-time is constant over the sinusoid: ton + 2 * L * t Pin u and
Vac2
that the switching frequency modulation is brought by the off-time that equals:
toff + 2 * 2 * L *
2 * Vac * sin(wt)
t Pin u
* sin(wt) + ton *
Vac * (Vout * 2 * Vac * sin(wt))
Vout * 2 * Vac * sin(wt)
(eq. 2)
Main Equations
Switching Frequency
time, the input voltage applies across the coil and the
current increases linearly through the coil with a
(Vin/L) slope:
Icoil(t) + Vin * t
L
(eq. 3)
(eq. 6)
This phase ends when Icoil reaches zero, then the off-time
is given by the following equation:
toff +
(eq. 4)
L * Icoil_pk
Vout * Vin
(eq. 7)
(eq. 5)
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155
Vout
(eq. 8)
Vin * (Vout * Vin)
AND8123/D
20
T + 2 * 2 * L *t Pin u * sin(wt)
Vac
Vout
*
2 * Vac * sin(wt) * (Vout * Vin)
f / f(200W)
T + 2 * L *t Pin u * Vout
Vac2 * (Vout * Vin)
(eq. 10)
50
100
150
200
Pin (W)
10
2 * Vac * sin(wt)
Vac2
1*
Vout
2 * L *t Pin u
(eq. 11)
A modulation factor
1*
2 * Vac * sin(wt)
Vout
1.5
that
1.0
sin (wt)
0.5
2.50
f
2.00
1.0
2.0
3.0
f / f(90)
wt
1.50
This plot gives the switching variations over the AC line sinusoid
at Vac = 230 V and Vout = 400 V, in a normalized form where f
is taken equal to 1 at the AC line zero crossing. The switching
frequency is approximately divided by 5 at the top of the
sinusoid.
1.00
0.50
80
110
140
170
200
Vac, (V)
230
260
290
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156
AND8123/D
1.5
1.0
sin (wt)
1.0
(eq. 13)
0.5
Icoil_pk
2
2.0
Since the PFC stage forces the power factor close to 1, one
can use the well known relationship linking the average
input power to the AC line rms current and rms voltage
(t Pin u+ Vac * lac) and the precedent equation leads to:
3.0
wt
(eq. 15)
(Icoil_pk)H + 2 * 2 * t Pin u
Vac
(eq. 16)
From this equation, one can easily deduct that the peak
coil current is maximum when the required power is
maximum and the AC line at its minimum voltage:
Icoil_max + 2 * 2 * t Pin u max
VacLL
(eq. 17)
(eq. 14)
(eq. 12)
when ton<t<T.
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157
AND8123/D
Therefore, the rms value of any coil current triangle over the corresponding switching period T, is given by the following
equation:
t (Icoil)rms u T +
1*
T
2
T
2
Icoil_pk * t
* dt ) Icoil_pk * T * t * dt
ton
T * ton
ton
0
ton
(eq. 18)
t (Icoil)rms u T +
1*
T
(eq. 19)
(eq. 22)
Pin u * sin(wt)
23 * t Vac
(eq. 20)
gives the resistive losses at this given Vin. Now to have the
rms current over the rectified AC line period, one must not
integrate <(Icoil)rms>T but the square of it, as we would
have proceeded to deduct the average resistive losses from
the dissipation over one switching period. However, one
must not forget to extract the root square of the result to
obtain the rms value.
As the consequence, the coil rms current is:
(eq. 21)
1 * ton ) T * ton
3
3
T
t (Icoil)rms u T +
ton
Icoil_pk2 ton3
* (T * ton)
*
)
*
3
3 * Icoil_pk
ton2
(Icoil)rms +
(eq. 24)
2 *
Tac
Tac2
t (Icoil)rms u T2 * dt
(eq. 23)
2 *
Tac
Tac2
2*
This equation shows that the coil rms current is the rms
value of: 2 *
Pin u * sin(wt),
23 * t Vac
2
* dt
(eq. 25)
Therefore:
Icoil(rms) + 2 * t Pin u
3
Vac
2 * t Pin u * sin(wt)
3
Vac
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158
(eq. 26)
AND8123/D
The output voltage is considered as a constant. The
Switching Losses
Dissipated Power:
(IMOSFET * Vdrain)
tFR
IMOSFET
Vdrain
dt
psw +
L * Icoil_pk
Vout
*
.
Vin
Vout * Vin
psw +
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159
(eq. 28)
AND8123/D
(eq. 29)
dt ) tFR
*
2*L
2 *
Tac
t psw u+ 2 *
Tac
Tac2
Vin * Vout * dt
Tac2
0
(eq. 31)
2 *
Tac
Tac2
Vin2 * dt
(eq. 30)
12
Or in a simpler manner:
(eq. 32)
QT
VDS
VGS
6
Q2
Q1
3
ID = 2.3 A
TJ = 25C
Q3
0
dt ) tFR
2 * 2 * Vac * Vout
t psw u+
*
* Vac2
p
2*L
Tac2
One must note that the calculation does not take into
account:
The energy consumed by the controller to drive the
MOSFET (Qcc*Vcc*f), where Qcc is the MOSFET
gate charge necessary to charge the gate voltage to Vcc,
Vcc the driver supply voltage and f the switching
frequency.
The energy dissipated because of the parasitic
capacitors of the PFC stage. Each turn on produces an
abrupt voltage change across the parasitic capacitors of
the MOSFET drain-source, the diode and the coil. This
results in some extra dissipation across the MOSFET
(1/2*Cparasitic*DV2*f), where Cparasitic is the
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160
AND8123/D
considered parasitic capacitor and DV the voltage
change across it.
1
Icoil(t) + Vin * t
L
(eq. 33)
During the rest of the switching period, the power switch is off. The conduction losses resulting from the power dissipated
by Icoil during the on-time, one can calculate the power during the switching period T as follows:
ton
pT + 1 *
T
ton
Ron * Icoil(t)2 * dt + 1 *
T
(eq. 34)
2 ton
2
3
pT + Ron * Vin * t2 * dt + 1 * Ron * Vin * ton
3
L
L
T
T
0
As the coil current reaches its peak value at the end of the
on-time, Icoil_pk + Vin * tonL and the precedent equation
can be rewritten as follows:
pT + 1 * Ron * Icoil_pk2 * ton
3
T
(eq. 35)
2
Ron * Vin * t * dt
L
(eq. 36)
(eq. 37)
(eq. 38)
One can note that the coil peak current (Icoil_pk) that
follows a sinusoidal envelop, can be written as follows:
Replacing Vin and Icoil_pk by their sinusoidal expression, respectively (2 * Vac * sin(wt)) and (2 * 2 * t Pin u * sin(wt)),
Vac
2 * 1 * 2 * VacVout* sin(wt)
(eq. 39)
2 * Vac
2
pT + 8 * Ron * t Pin u * sin 2(wt) *
* sin 3(wt)
3
Vac
Vout
(eq. 40)
Equation (40) gives the conduction losses at a given Vin voltage. This equation must be integrated over the rectified AC line
sinusoid to obtain the average losses:
2
t p u Tac + 8 * Ron * t Pin u * 2 *
3
Vac
Tac
Tac2
sin 2(wt) *
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161
2 * Vac
* sin 3(wt)
Vout
* dt
(eq. 41)
AND8123/D
If the average value of sin2(wt) is well known (0.5), the
calculation of <sin3(wt)> requires few trigonometry
remembers:
sin 2(a) +
sin(a) * cos(b) +
sin(a ) b) ) sin(a * b)
2
1 * cos(2a)
2
sin 3(wt) +
3 * sin(wt) sin(3wt)
*
4
4
(eq. 42)
2
t p u Tac + 8 * Ron * t Pin u * 2 *
3
Vac
Tac
Tac2
2 * Vac
3 * 2 * Vac
sin(wt)2 *
* sin(wt) )
* sin(3wt)
4 * Vout
4 * Vout
2 * Vac 2
2
3 * 2 * Vac 2
t p u Tac + 8 * Ron * t Pin u * 1 *
*p )
*
3
2
Vac
4 * Vout
4 * Vout 3p
2
8 * 2 * Vac
t p u Tac + 4 * Ron * t Pin u * 1 *
3
Vac
3p * Vout
1*
8 * 2 * Vac
3p * Vout
* dt
(eq. 44)
(eq. 45)
(eq. 46)
(eq. 43)
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162
AND8123/D
Doing this, one obtains:
2
8 * 2 * Vac
t pRs u 262 + 4 * Rs * t Pin u * 1 *
3
Vac
3p * Vout
(eq. 47)
where <pRs>262 is the power dissipated by the current sense resistor Rs.
(eq. 48)
Vac
Consequently:
2
(eq. 49)
t pRs u 260 + 4 * Rs * t Pin u
3
Vac
(eq. 50)
8 * 2 * Vac
3p * Vout
Id(rms)T +
Id(rms)T + 2 *
(eq. 57)
(eq. 58)
In addition, one can easily show that toff and T are linked
by the following equation:
2 * Vac * sin(wt)
toff + T * Vin + T *
Vout
Vout
(eq. 59)
(eq. 52)
Id(rms)T +
Then, in average:
3
2 * 2 * 2 t Pin u
*
* sin(wt) (eq. 60)
3
Vac * Vout
(eq. 53)
3toff* T * Icoil_pk
Id + Iload ) ICout
(eq. 56)
One obtains:
toff
2
Id(rms)2T + 1 * Icoil_pk * toff-t * dt
T 0
toff
(eq. 55)
(eq. 54)
Tac2
Id(rms)2 + 2 *
Tac
http://onsemi.com
163
(eq. 61)
8 * 2 t Pin u2
*
* sin 3(wt) * dt
3
Vac * Vout
AND8123/D
Similarly to the Power MOSFET Conduction Losses section, the integration of (sin3 (wt)) requires some preliminary
trigonometric manipulations:
sin 3(wt) + sin(wt) * sin 2(wt) + sin(wt) *
1 * cos(2wt)
+ 12 * sin(wt) * 12 * sin(wt) * cos(2wt)
2
And :
sin(wt) * cos(2wt) + 1 * (sin(-wt) ) sin(4wt))
2
Then :
sin 3(wt) + 3 * sin(wt) * 1 * sin(3wt)
4
4
3 * sin(wt) sin(3wt)
8 * 2
Pin2
*
*
*
* dt
4
3
4
Vac * Vout
(eq. 62)
cos(p)-1
3 * (1- cos(p))
16 * 2
Pin2
Id(rms)2 +
*
*
)
3
Vac * Vout
12w * Tac
4w * Tac
(eq. 63)
(eq. 64)
Thus:
(eq. 71)
16 * 2 t Pin u2
(eq. 65)
Id(rms)2 +
*
* 6 * 1
3
Vac * Vout 8 * p 12 * p
Tac2
I1 * I2 * dt
0
PFC Stage
(eq. 66)
2 * 2
p
* t Pin u
Vac * Vout
Vin
I1
Load
DRV
One knows the first term (I1(rms)2). This is the diode rms
current calculated in the previous section. The second and
third terms are dependent of the load. One cannot compute
them without knowing the characteristic of this load.
Anyway, the second term (I2(rms)2) is generally easy to
calculate once the load is known. Typically, this is the rms
current absorbed by a downstream converter. On the other
hand, the third term is more difficult to determine as it
depends on the relative occurrence of the I1 and I2 currents.
As the PFC stage and the load (generally a switching mode
power supply) are not synchronized, this term even seems
impossible to predict. One can simply note that this term
tends to decrease the capacitor rms current and
consequently, one can deduct that:
(eq. 68)
Tac2
(I1 * I2)2 * dt
(eq. 69)
Tac2
Power
Switch
I2
Ic
(eq. 67)
Vout
(eq. 70)
(eq. 72)
AND8123/D
Substitution of equation (67) that gives the diode rms
current into the precedent equation leads to:
Ic(rms) v
Pin u2
329 ** p2* *t
) I2(rms)2
Vac * Vout
(eq. 73)
If the load is resistive, I2 = Vout/R where R is the load resistance and equation (71) changes into:
2
Ic(rms)2 + 1(rms)2 ) Vout * 4 *
Tac
R
Tac2
1 * Vout * dt
R
(eq. 74)
2
Ic(rms)2 + Id(rms)2 ) Vout 2 * Vout *t Id u
R
R
(eq. 75)
2
32 * 2 t Pin u2
Ic(rms)2 +
*
) Vout * 2 * Vout * Pout
R
R
Vout
9 * p Vac * Vout
(eq. 76)
Ic(rms) +
2
32 * 2 t Pin u2
*
* Vout
9 * p Vac * Vout
R
(eq. 77)
PFC Stage
Id
Vin
I2
Load
Ic
Driver
ESR
Bulk
Capacitor
http://onsemi.com
165
AND8123/D
400 V
Vout (5 V/div)
0V
Vout (5 V/div)
400 V
Ic (200 mA/div)
0A
0V
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166
AND8123/D
In this calculation, one does not consider the switching
ripple that is generally small compared to the low frequency
ripple. In addition, the switching ripple depends on the load
current shape that cannot be predicted in a general manner.
As already discussed, the average coil current over a
switching period is:
lin +
2 *t Pin u
* sin(wt)
Vac
(eq. 78)
(eq. 80)
(eq. 81)
2
h *t Pin u * sin(2wt)
t Vout
+1*
Vout u
Cbulk * w *t Vout u 2
(eq. 84)
Thus:
(eq. 85)
t Vout u ) dVout +
t Vout u
(eq. 79)
h *t Pin u * sin(2wt)
1 * Cbulk
* w *t Vout u 2
-h *t Pin u
* sin(2wt) (eq. 83)
Cbulk * w
dVout +t Vout u*
1*
(eq. 86)
h *t Pin u * sin(2wt)
*1
Cbulk * w *t Vout u 2
One can simplify this equation considering that the output voltage ripple is small compared to the average output voltage
(fortunately, it is generally true). This leads to say that the term
words, that
1*
h *t Pin u * sin(2wt)
*1
Cbulk * w *t Vout u 2
h *t Pin u * sin(2wt)
Cbulk
is small compared to 1. Thus, one can write that:
* w *t Vout u 2
h *t Pin u * sin(2wt)
h t Pin u * sin(2wt)
1 * Cbulk
[1*1*
2
2
* w *t Vout u
Cbulk * w *t Vout u 2
http://onsemi.com
167
(eq. 87)
AND8123/D
Conclusion
-h *t Pin u * sin(2wt)
(eq. 88)
2 * Cbulk * w *t Vout u
The maximum ripple is obtained when (sin(2t) + -1)
and minimum when (sin(2wt) + 1) . Thus, the peak-to-peak
dVout +
h *t Pin u
(eq. 89)
Cbulk * w *t Vout u
And:
Vout +t Vout u *
(dVout)pk-pk
* sin(2wt) (eq. 90)
2
http://onsemi.com
168
AND8123/D
Switching Frequency:
f+
2 * Vac * sin(wt)
Vac2
1*
2 * L *t Pin u
Vout
Switching Losses:
t psw u[
Conduction Losses:
2
t Pon u+ 4 * Ron * t Pin u *
3
Vac
1*
8 * 2 * Vac
3p * Vout
2 *p2 * t Pin u
Vac * Vout
L1
D6
CONTROLLER
M1
AC Line
Iload
Vout
+
C1
LOAD
R7
R5
2
t pRs u 260 + 4 * Rs * t Pin u
3
Vac
Ic(rms) v
2
t pRs u 262 + 4 * Rs * t Pin u *
3
Vac
h *t Pin u
Cbulk * w *t Vout u
8 * 2 * Vac
1*
3p * Vout
32 * 2 *t Pin u 2
) Iload(rms) 2
9 * p * Vac * Vout
If load is resistive:
http://onsemi.com
169
Ic(rms) +
2
32 * 2 t Pin u 2
*
* Vout
R
9 * p Vac * Vout
AND8207/D
19 V/6.4 A Universal Input
AC-DC Adaptor with PFC
Using NCP1603
Prepared by: Kahou Wong
ON Semiconductor
http://onsemi.com
APPLICATION NOTE
INTRODUCTION
Topology
PFC Stage
PWM Stage
Features
CRM / DCM
boost
CCM / DCM
flyback
application.
Standby
condition
Power off
Skipping
cycle
Fault
condition
Power off
Double
hiccup
restart
It minimizes power dissipation in fault and allows auto-recovery ability when fault is
cleared.
Latch
protection
activated
Power off
Latched off
VCC stays above typical 5.6 V and PWM drive output remains off until circuit reset.
Reset needs the AC input unplugged.
170
F1
2A
L1
D1 - D4
1N5406 x 4 180uH / 10A
C1 0.1uF
D5
C4 - C5
MUR460 100uF / 450V x 2
Q1
SPP11N60C3
R22 150k
C16 100pF
R20 25
D13 1N5359B
Osc
R8* 0
http://onsemi.com
171
Vaux
HV
FB2
NC
CS2
Vcc2
Gnd1
CS1
Out1
Vctrl
Vcc1
FB1
R7 1k
R16 1k
C17 1nF
C8 0.047uF
R21* 15k
R14* 15k
Gnd2 Out2
IC4 TL431A
Q2 SPP06N80C3
R11 - R12
0.5 /1W x 2
C18 33pF
R24 4.3k
D10 MRA4005
C6 470uF
Ramp
D9 MPZ4745A
C15 1nF
C14 0.82uF
IC1 NCP1603
C13 2200pF
C2 0.22uF
C19 0.82uF
C7 1nF / 1000V
R18 2.37k
Flyback transformer T2
TDK SRW42EC-U16H014
Primary inductance = 420uH +/- 10%
Leakage inductance = 6.5uH max
Turn ratio = 5.58 : 1 : 0.79
IC3
SFH615AA007
R15 4.99k
C21
0.1uF
C12 2200uF
R10
332
C20 0.82uF
R9 10
IC2 SFH615AA007
D11 - D12
MBR16100 x 2
T2
C9 - C11
L2
2200uF x 3 10uH / 10A
R17 15.8k
*Note: Circuit is not synchronized when R14 and R21 are removed.
Circuit is synchronization when R14 and R21 are connected.
R8 is a bare wire, the PFC section is disabled when R8 is removed.
D6
MUR1100E
D8
MURS160
(Vcc = 15V)
D7 1.5KE250A
R23 13k
R13 47k / 5W
R6 10
R1 - R2
0.05 / 1W x 2
C3 1uF
AC
Input
90 to 260 Vac
T1
P3717-A
AND8207/D
AND8207/D
DESIGN STEPS
90 to 260 Vac, 50 Hz
19 Vdc, 6.4 A, isolated
Synchronization option
Output overvoltage protection latch
f + 107kHz
T + 1 + 9.33ms
f
P
19V 6.4A + 150.1W
Pin + out
h +
81%
AC Line
150.1 W
380 V
135.1 W
150 W
PFC Boost
90% efficiency
120 W
PWM flyback
90% efficiency
15 W loss
19 V / 6.4 A
121.6 W
13.5 W loss
AC Input
PFC
Boost
EMI Filter
and
Diode
Bridge
Output
19 V / 6.4 A
HV
VCC 15 V
NCP1603
http://onsemi.com
172
AND8207/D
Cramp + 1000pF
With this value of Cramp, the Vcontrol in high line and low
line conditions are 0.11 V and 0.89 V respectively.
Vcontrol +
+ 2180
Vcontrol +
2LIchPin
CrampVac2
+ 2180
P
150
Pin + out
h + 90% + 167W
Iac +
2LIchPin
CrampVac2
Pin
+ 167W + 1.85Aac
Vac
90V
V
* Vin Vin 1
L(CRM) + out
Vout
Ipk f
+
t1 ) t2 +
t1 ) t2 +
V
* Vin Vin 1
freq + out
Ipk L
Vout
Pin
2LIch
Vac2
10-6100
-9
368.86
10 0.74
100
10-6
368.86 * 2 90
+ 167 2180
902
CrampVcontrol
Vout
Vout * Vin
Ich
+ 11.31ms u 9.33ms
+ 88kHz t 107kHz
Cramp u
-9
378.67
10 0.09
+ 30.64ms u 9.33ms
L + 180mH
CrampVcontrol
Vout
Vout * Vin
Ich
RS + 1kW
10-6 + 742pF
http://onsemi.com
173
AND8207/D
RCS +
+
RSIS(OCP) * VS(OCP)
IL(OCP)
1kW200mA * 3.2mV
+ 31.3mW
5.24A
RSIS(OCP)
RCS
1kW200mA * 3.2mV
+ 7.87A
25mW
Vin(L) + 100V
Vin(H) + 420V
http://onsemi.com
174
AND8207/D
when Vaux is high and it reduces the variation of VFB2
between the PFC-on and PFC-off.
Vaux
VFB2
3
VCS2
Out 2
High duty when PFC is off.
High
Current
Loop
High
Current
Loop
Gnd
S D G
PFC Boost
MOSFET
CS2
NCP1603
CS1
S D G
PWM Flyback
MOSFET
MEASUREMENT
Part I. Standby loss
http://onsemi.com
175
Input
Input power
260 Vac
180 mW
230 Vac
150 mW
220 Vac
145 mW
200 Vac
130 mW
160 Vac
110 mW
AND8207/D
Part II. Operating and Not Synchronized
Output
Efficiency
PF / THD
90 Vac 145.4 W
18.91 V 6.4 A
83.2%
0.998 / 5.2%
18.91 V 6.4 A
84.2%
0.997 / 5.2%
18.91 V 6.4 A
84.5%
0.996 / 6.3%
18.91 V 6.4 A
86.8%
0.993 / 6.3%
18.91 V 6.4 A
88.0%
0.982 / 13.3%
18.91 V 6.4 A
88.3%
0.973 / 17.9%
18.91 V 6.4 A
89.1%
0.934 / 34.2%
http://onsemi.com
176
AND8207/D
OSC
NCP1603
This part shows the circuit operating with the PFC and
PWM sections are synchronized together. It is done by
adding two 15 kW resistors (R14 and R21) as in Figure 10.
The 100 pF capacitor here added as a decoupling filter for
smoothing the synchronization signal to osc pin (Pin 5). The
capacitor is essential because PFC performance can be
degraded by noisy synchronization signal. The value of
100 pF is selected because too large value will result in big
RC constant so that the osc pin voltage cannot reach 3.5 V
and 5 V for synchronization. The result shows that the
synchronization cannot offer a better efficiency in this
circuit.
Out2
R14
15k
R15
15k
C16
100 pF
Output
Efficiency
PF / THD
90 Vac 146.0 W
18.91 V 6.4 A
82.9%
0.998 / 4.5%
18.91 V 6.4 A
83.3%
0.997 / 5.3%
18.91 V 6.4 A
83.9%
0.996 / 6.6%
18.91 V 6.4 A
86.0%
0.993 / 5.8%
18.91 V 6.4 A
87.1%
0.982 / 11.4%
18.91 V 6.4 A
87.4%
0.976 / 15.3%
18.91 V 6.4 A
88.1%
0.939 / 31.3%
http://onsemi.com
177
AND8207/D
Part IV. PFC On/Off Transition
is on, the flyback input voltage goes higher again. Hence, the
circuit may oscillate at the PFC-on/off boundary.
When resistor R22 is removed, the circuit goes toggling.
In Figures 15 to 17, the upper trace is the output current with
1 A/div and the lower trace is the PFC output voltage with
100 V/div. In these figures, the input voltage is 110 Vac. The
PFC stage is toggling when output current is 2.8 A in Figure
15. A resistor R22 (150 kW) is added between Vaux and CS2
pin. The PFC stage turns on when output is 3 A in Figure 16
and it turns off when output is 1.6 A in Figure 17.
http://onsemi.com
178
AND8207/D
Appendix I. Bill of Material of the NCP1603 19 V/6.4 A Example Circuit
Designator
F1
L1
L2
T1
T2
Q1
Q2
IC1
IC2 - IC3
IC4
D1 - D4
D5
D6
D7
D8
D9
D10
D11 - D12
D13
D14
R1 - R2
R3 - R4
R5
R6
R7
R8
R9
R10
R11 - R12
R13
R14, R21
R15
R16
R17
R18
R19
R20
R22
R23
R24
C1
C2
C3
C4 - C5
C6
C7
C8
C9 - C12
C13
C14, C19 - C20
C15, C17
C16
C18
C21
C22
Heatsink
Heatsink Insulation
AC Connector
DC Connector
Qty
1
1
1
1
1
1
1
1
2
1
4
1
1
1
1
1
1
2
1
1
2
2
1
1
1
1
1
1
2
1
2
1
1
1
1
1
1
1
1
1
1
1
1
2
1
1
1
4
1
3
2
1
1
1
1
3
4
1
1
Part No
0465 02
PCV-2-184-10
PCV-2-103-10
P3717-A
SRW42EC-U16H014
SPP11N60C3
SPP06N80C3
NCP1603D100
SFH615AA-X007
TL431AID
1N5406
MUR460
MUR1100E
1.5KE250A
MURS160
MZP4745A
MRA4005T3
MBR16100CT
1N5359B
1N5923B
WSL2512R0500FEA
CCF55910KFKE36
CRCW12066042F
CRCW120610R0F
CCF551K00FKE36
N/A
CCF5510R0FKE36
CRCW12063320F
WSL2512R5000FEA
HPS523-47k-5%
CRCW12061502F
CRCW12064991F
CRCW12061001F
CRCW12061582F
CRCW12062371F
CCF55750RFKE36
CRCW120624R9F
CRCW12061503F
CRCW12064321F
CRCW12061302F
LE104
RE224
LE105
450AXW100M18X40
025YXG-470M00-10X16
ERO610RJ4100M
630MMB473K
025YXG2200M12.5X30
VJ1206Y222KXXA
VJ1210Y824KXXA
VJ1206Y102KXXA
VJ1206A101KXXA
VJ1206A330KXXA
VJ1210Y104KXXA
VJ1206Y101KXBA
78065
4672
770W-X2/10
26-60-4030 or 009652038
Description
250 V 2 A Delay Surface Mount Fuses
Inductor 10 A 180 mH
Inductor 10 A 10 mH
CM 25 mH, DM 1 mH filter, 3 A rms
Custom Transformer 420 mH, 5 A, 5.58:1:0.79
11 A 600 V N-MOSFET
6 A 800 V N-MOSFET
PFC/PWM Combo Controller
Optocoupler
2.5 V 1% Voltage Reference, SO-8
3 A 600 V Diode
4 A 600 V Diode
1 A 1000 V Diode
250 V TVS Zener Diode
1 A 600 V Diode
16 V @ 15.5 mA Zener Diode
1 A 600 V Diode
16 A 100 V Diode
24 V @ 1 mA Zener Diode
8.2 V @ 49.2 mA Zener Diode
0.05 W 1W SMD 1%
910k W, axial 0.25W 1%
60.4k W, SMD 1206 1%
10 W, SMD 1206 10%
1k W, axial 0.25W 1%
bare wire, remove for disable PFC section
10 W, axial 0.25W 1%
332 W, SMD 1206
0.5 W 1W SMD 1%
47k W, 4W axial 5%
15k W, SMD 1206
4.99k W, SMD 1206
1k W, SMD 1206
15.8k W, SMD 1206
2.37k W, SMD 1206
750 W, axial 0.5W
25 W, SMD 1206
150k W, SMD 1206
4.32k W, SMD 1206
13k W, SMD 1206
0.1 mF 275 Vac Film Capacitor
0.22 mF 275 Vac Film Capacitor
1 mF 275 Vac Film Capacitor
100 mF 450 V Aluminium Cap
470 mF 25 V Aluminium Cap 20%
1 nF 5 mm pitch Y2 cap
0.047 mF 630 V Film Capacitor 10%
2200 mF 25 V Aluminium Cap
2200 pF 25 V Ceramic Cap
0.82 mF 25 V Ceramic Cap
1 nF 25 V Ceramic Cap
100 pF 25 V Ceramic Cap
33 pF 25 V Ceramic Cap
0.1 mF 25 V Ceramic Cap
100 pF 100 V Ceramic Cap
Indian Chief 1.18 unfinished cut
TO-220 mica insultion
IEC60320 C8 Connector
3-terminal 3.96 mm distance male header
http://onsemi.com
179
Manufacturer
Littelfuse
Coilcraft
Coilcraft
Coilcraft
TDK
Infineon
Infineon
ON Semiconductor
Vishay
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
Vishay
Vishay
Vishay
Vishay
Vishay
N/A
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Okaya
Okaya
Okaya
Rubycon
Rubycon
Evox Rifa
Rubycon
Rubycon
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Aavid
Keystone
Qualtek
Molex
AND8207/D
Appendix II. The PCB Layout
http://onsemi.com
180
AND8179/D
Using Critical Conduction
Mode for High Power Factor
Correction
Prepared by: Frank Cathell
ON Semiconductor
http://onsemi.com
APPLICATION NOTE
Introduction
Power Factor Correction (PFC) is very much a necessity
for off-line switchmode power supplies requiring output
powers of 75 watts or more. Boost converters using
discontinuous mode and critical conduction mode design
approaches to PFC have been mostly relegated to the low
power end of the power spectrum because of the low cost
and simplicity of the circuitry. It turns out that the critical
conduction mode approach offers the same simplicity and
low cost for power factor correctors in the kilowatt range and
can additionally offer several performance advantages over
the more conventional continuous conduction mode
typically used in this power range.
Rectifiers
PFC Preconverter
AC
Line
+
High
Frequency
Bypass
Capacitor
Converter
Bulk
Storage
Capacitor
Load
181
AND8179/D
In critical conduction mode operation, sometimes
referred to as boundary mode or transition mode operation,
the inductor current is allowed to completely go to zero
before the next switching cycle of the mosfet is initiated.
Figure 2 illustrates the inductor current waveform with the
mains current envelope superimposed to show their
relationship. In order for the critical conduction mode
technique to work properly, a means of sensing when the
inductor current has reached zero is imperative. This is done
most effectively by a small auxiliary sense winding on the
boost choke that indicates when the flyback voltage across
the winding has dropped to less than a volt or so. Sensing
zero current by this indirect method is much more noise
immune than sensing the current directly. A consequence of
having to sense for the zero current point prior to mosfet
turn-on disallows fixed frequency operation in this mode.
In fact the frequency will typically vary over a 5:1 range
from the midpoint in the AC sinewave to the zero crossing
point. Changes in the output load and/or the nominal line
operating point will also cause shifts in the median operating
frequency.
IGBT for the boost switch, the peak currents and their
impact become less significant and the following
advantages of this design approach can be realized:
1. The output diode essentially self-commutates off
because the current is zero in the device before the
IGBT turns on. In many cases a conventional fast
recovery diode can be used for the boost output
rectifier and heatsinking may not be necessary
because all diode losses are due to forward
conduction.
2. The IGBT (or mosfet) switch sees zero current
switching at turn-on so heating due to switching
losses and EMI are generated only when the power
switch turns off. It should also be noted that the
switching frequency is lowest when the input line
peaks are maximum and hence the power switch
currents are at their maximum. Maximum
switching frequency and minimum switch current
occurs around the zero crossing point of the AC
line envelope.
3. The average EMI is further reduced by the
constantly shifting or dithering effect of the
variable frequency operation of the PFC.
4. The control algorithm for achieving high power
factor and low harmonic distortion using this mode
is extremely simple and can be accomplished with
ON Semiconductor's MC33262 eight pin control
chip and a minimum of external components.
5. The required inductance for the boost choke is
approximately one fourth of that typically required
for continuous mode chokes. This means fewer
turns and less expensive chokes in most cases. It
can be shown that for lowest harmonic distortion,
a choke with a linear B/H response characteristic
(i.e. constant inductance) is desirable for critical
conduction mode operation. This requires the use
of a gapped ferrite core which would typically be a
larger structure due to the maximum flux
limitations of ferrite than would be the powdered
iron or Molypermalloy (MPP) magnetic structures
commonly used for continuous mode PFCs. It has
been found experimentally, however, that if a more
compact choke design is necessary, low loss
powdered iron or MPP materials can be used
effectively for critical conduction mode as long as
the inductance drop caused by the dc bias is no
more than about 25% maximum.
Peak
Inductor Current
IQ1
ID3
Average
On
MOSFET
Q1
Off
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182
AND8179/D
One Kilowatt Power Factor Corrector
Figure 3 shows a 1.0 kilowatt, universal input power
factor corrector implemented with the ON Semiconductor
MC33262 critical conduction mode control chip and a single
IGBT. The internal circuit architecture of the chip is shown
in Figure 4. Referring to these figures the basic PFC circuit
operation is as follows: Input signals to the control chip from
the dc output voltage (Pin 1) and the full-wave rectified line
voltage (Pin 3) are presented as inputs to a single quadrant,
analog voltage multiplier. The output of the multiplier is just
a reproduction of the rectified line voltage in which the
amplitude is modulated by the PFC dc output voltage so as
to achieve output regulation. The multiplier output signal
becomes the reference for the current sense comparator. The
non-inverting input to this comparator sees the peak IGBT
current profile that is developed across current sense resistor
R9. The current sense comparator output is now a pulse
width and pulse rate modulated signal that eventually drives
the gate of the IGBT after some additional logic level signal
processing. Note that the next critical level of signal
processing is in the R/S latch where the zero current sense
detector circuit allows the IGBT to be turned on for the next
switching cycle only after the choke current has reached
zero. The zero current point is detected indirectly by looking
for a complete collapse of the choke flyback voltage via
C1
D4 (optional)
R1
100k
2W
D1
27,1 W
1N4751A
C2
2 mF
400 V
x2
R2
220 mF,
35 V
C3
+
L1
100 mH
35 Apk
D2
MUR110
2T
1N5406
27T
D3
MUR860
22k
+
R3
Q1
IRG4PC50W
D5 MUR110
MC33262
U1
8
5
D6
Q2
C6
1 mF
R5
10k
C4
1 nF
2N2907A
R6
2k
C5
1 nF
R8
10k
400 Vdc
output
450 V
R4
1.2 M
1/2 W
MUR160
25 A,
600 V
L2
3 - 5 mH
300 mF
AC input
from EMI
filter
BR1
Pin 5. The end result of this logical process is that the peak
current being switched by the IGBT through the choke must
track the low frequency sine envelope of the rectified line
voltage (see Figure 2). Because of the triangular current
waveform produced by the critical conduction control
algorithm, it turns out that the average choke current over a
line half-cycle is also a sine wave. The end result is that the
input line current is forced to be sinusoidal and in phase with
the line voltage.
In order for harmonic distortion to be minimal the
bandwidth of the voltage control loop must be less than the
line frequency. Capacitor C6 sets this point to about 16 Hz.
If the bandwidth were wider, the error amplifier would
attempt to regulate off the 120 Hz ripple component on
output bulk capacitors C8 and C9. This would cause the
input current waveshape to start looking like a trapezoidal
wave instead of a sine wave. The power factor would still
be high but the harmonic distortion would become
unacceptable.
For those interested in a detailed mathematical
description of power factor corrector circuits operating in
critical conduction mode, please see the ON Semiconductor
Application Note AND8123/D by Joel Turchi. (see
references)
C8 C9
R7
100
C7
1 nF
R9a, b, c
0.1, 3 W
x3
R10
1.6 M
1W
R11
10k
_
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183
AND8179/D
8
Zero Current
Detector
1.2V
+
36V
6.7V
1.6V/
1.4V
UVLO
2.5V
Reference
+ 13V/
8.0V
16V
Timer R
Drive
Output
Delay
RS
Latch
10
10
20k
Current Sense
Comparator
1.5V
Overvoltage
Comparator
+
10pF
1.08 Vref
10mA
Multiplier
Error Amp
+
Vref
Quickstart
2
Table 2.
Power Out
Vin
Vout
PF
Efficiency
THD (Current)
100 W
120 Vac
396 Vac
0.98
92%
4.0%
100 W
235 Vac
396 Vac
0.96
93%
10.1%
450 W
120 Vac
396 Vac
0.99
96%
2.9%
450 W
235 Vac
396 Vac
0.98
97%
4.0%
1.0 kW
120 Vac
396 Vac
0.99
94%
3.2%
1.0 kW
235 Vac
396 Vac
0.98
96%
5.1%
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184
AND8179/D
The following information is from additional data taken
during the testing of the 1.0 kW PFC:
References:
1. AND8123/D. Power Factor Controller Stages
Operating in Critical Conduction Mode.
www.onsemi.com
2. MC33260/D. GreenLinet Compact Power
Factor Controller: Innovative Circuit for Cost
Effective Solutions. www.onsemi.com
3. MC34262/D. Power Factor Controllers.
www.onsemi.com
http://onsemi.com
185
AND8292
Wide Mains, 19 V / 8 A
Power Supply Including
Power Factor Correction
Prepared by: Jol Turchi,
ON Semiconductor
http://onsemi.com
Introduction
186
AND8292
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187
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188
F1
C13
2.2 nF
Type = Y2
Earth
90-265 Vrms
C11
330nF
Type = X2
CM2
150mH
CM1
IN
C12
2.2 nF
Type = Y2
C15
330nF
Type = X2
U1
KBU6K
Vramp
R1
1800k
C1
330nF
Type = X2
Vin
pin6
C8
220nF
R58
22k
DRV1
R8
4.7k
R52
6.8k
R15
62k
R3
1800k
R4
1800k
R16
1800k
R6
2.4 k
R7
0.1
C3
4.7 nF
pin6
C37
1 nF
Vramp
R2
150
C22
680 nF
C6
220 F
Vcc
T1x
150H (np/ns=9)
10
11
12
13
14
15
16
R17
27k
NCP1605
C14
1 nF
C4
390 pF
STBY
Vcc
DRV1
C17
220 nF
pfcOK
R21
27k
R23
820k
R24
560k
C30
1 nF
R12
47
R22
1800k
R14
1800k
Q2
BC369
R11
1k
C5
10 nF
D3
16 V
R42
100
Vcc
R13
2.2
Vbulk
D2
1N4148
R20
1800k
R9
1800k
R10
10k
Vbulk
M1x
SPP20N60S
C2
100 uF / 450 V
D1
MUR460
AND8292
R46
22k
C33
1 nF
C34
1 nF
D14
1N5817
R45
0R
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189
C31
220F
3
4
Vcc
Vz
C20
1 F
R51
10k
R39
47
D8
1N4148
Q7
BC368
SGND
Vbulk
D9
16V
R31
10 k
NCP1217A
C25
2.2 nF
Type = Y2
Q1
BC369
C32
100 nF
Q5
BC368
R50
10
Vcc
C28
100F / 50V
D15
1N4934
D17
1N4148
R44
2.2
X25
Vaux
STBY
R40
10
R36
10
D10
100nF
R37
10k
Vaux
D12
MUR160E
D18
16 V
FB
D20
16 V
R38
10k
T2
800 H
K = Np/Ns=7; Np/Naux=14
R18
22k
R28
47k
R25
0.33 / 3 W
X24
SPP11N60
X31
SPP11N60
R1x
43k
D16
3V0
C26
1 F
D6
D7
SGND
X30
TL431
FB
MBR20100CT
R55
1k
R56
0R
OVL detection
D13
MUR160E
Q1x
BC846B
Vcc
Note: the board is designed to also give the possibility to have the two MOSFETs of the 2switch forward
converter driven through a transformer. Some components (diodes D11, D19 and D21) that are necessary
for this option, are useless in the presented version where only the highside one is controlled through a
transformer. They are short circuited in the board and, hence, they are not visible in this schematic.
R43
1k
C35
1nF
FB
R49
6.8 k
pfcOK
C21
2.2 nF
Type = Y2
FB
R29
3.3k
X29
SFH615A-4
19 V / 8 A
C23
10nF
R57
1k
R30
3.3k
C29
470 F / 25 V
C18
470 F / 25 V
C19
1 F
Vbulk
SGND
R35
100 / 2 W
C27
470 pF
L1
26 H
Q6
BC368
FB
R27
22k
AND8292
AND8292
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AND8292
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191
AND8292
VBULK (CH1)
19 V Output
Voltage (CH2)
VBULK (CH1)
VBULK (CH3)
19 V Output
Voltage (CH2)
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AND8292
Table 3. Power Factor and Efficiency
VIN, RMS
PIN, AVG
PF
THD
VBULK
VOUT (19 V)
VOUT (19 V)
Efficiency
(V)
(W)
(-)
(%)
(V)
(V)
(A)
(%)
90
28.2
0.966
24
381
19.23
1.00
68.2
90
70.5
0.991
13
381
19.23
3.00
81.8
90
114.5
0.995
381
19.23
5.00
84.0
90
183.2
0.990
13
363
19.23
8.00
83.9
120
27.7
0.961
20
381
19.23
1.00
69.4
120
70.3
0.987
13
381
19.23
3.00
81.1
120
113.2
0.992
11
381
19.23
5.00
83.9
120
180.3
0.997
10
381
19.23
8.00
85.3
230
28.0
0.806
28
381
19.23
1.00
68.7
230
69.2
0.940
20
381
19.23
3.00
83.4
230
112.0
0.966
18
381
19.23
5.00
85.8
230
177.4
0.976
17
381
19.23
8.00
86.7
265
27.8
0.696
52
389
19.23
1.00
69.2
265
68.6
0.901
26
381
19.23
3.00
84.1
265
111.9
0.950
21
381
19.23
5.00
85.9
265
176.9
0.950
28
381
19.23
8.00
86.9
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193
AND8292
Startup Sequencing at 120 Vrms and IOUT = 8 A
pfcOK Signal
the startup phase. The pfcOK pin turns high allowing the
downstream converter operation.
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194
AND8292
pfcOK Signal
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195
AND8292
pfcOK Signal
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196
AND8292
Figure 15. The Circuit Enters a Safe Low Duty-Cycle Hiccup Mode if the 19 V Output is Short Circuited
(Test Made at 120 VRMS)
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197
AND8292
More generally, this protection triggers when the load current (IOUT) is excessive. The following thresholds were measured:
Table 4.
VIN, RMS
(V)
90
110
180
230
265
IOUT
(A)
10.0
11.3
11.2
11.2
11.2
D15
1N4934
2
R44
2.2
Vaux2
C28
100mF / 50V
R31
10 k
Vz
Q7
BC368
D9
16V
D8
1N4148
Vcc
Q1x
BC846B
FB
R1x
43k
D16
3V0
Q3
BC368
R26
1k
C9
1mF
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198
(NCP1217A
Feedback Voltage)
AND8292
Protection of the PFC Stages
2 @ 0.1
which is closed to
(V CC * 16V)
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199
AND8292
Dynamic Performance
IOUT (2 A/div)
8A
VBULK (100 V/div)
2A
350 V
to a level that is low enough, the PFC stage skips cycles until
the bulk voltage reaches 95.5% of its nominal value. This
skipping period (see the VBULK decay period from 381 V
down to 360 V in Figure 15) avoids any overshoot and helps
provide the 2-switch forward with a narrow input voltage.
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200
AND8292
IOUT (2 A/div)
2A
360 V
19 V (AC Component - 1 V/div)
Standby Performance
Table 5.
Vac
(V)
90
110
PIN, AVG
(No Load)
(mW)
425
450
*These values were obtained by measuring Wh during 2 mn with a power meter YOKOGAWA WT210 at IOUT = 0.
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201
AND8292
IOUT (5 A/div)
VBULK (100 V/div)
19 V (5 V/div)
VIN (100 V/div)
Figure 21. Skip Mode Operation of the PFC Stage at 120 Vrms, No Load.
The Skip Mode Period is About 1.5 s.
IOUT (5 A/div)
382 V
VBULK (100 V/div)
19 V (5 V/div)
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202
360 V
AND8292
IOUT (5 A/div)
19 V (5 V/div)
VIN (100 V/div)
Figure 23. Skip Mode Operation of the PFC Stage at 230 Vrms, No Load
IOUT (5 A/div)
382 V
360 V
19 V (5 V/div)
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203
AND8292
Thermal Measurements
The following results were obtained using a thermal camera, after a 2.5 h operation at 25C ambient temperature. These data
are indicative.
Table 6.
PFC Stage
Power MOSFET
Bulk Capacitor
Coil
Input Bridge
85C
65C
85C
75C
110C
Power MOSFETs
Transformer
Output Capacitor
Output Coil
Output Diodes
(MBR20100)
90C (Low-Side)
85C (High-Side)
75C
55C
100C
110C
*Measurement Conditions: Low line (90 Vrms), full load (IOUT = 8 A).
BILL OF MATERIALS
CM1
CM CHOKE
B82734-R2322-B30
EPCOS
CM2
DM CHOKE
Wurth Electronik
330 nF X2 Capacitor
PHE840MY6330M
RIFA
C2
222,215,937,101
BC Components
C3
CMS Cap
4.7 nF
various
C4
CMS Cap
390 pF
various
C8, C17
CMS Cap
220 nF
various
C6, C31
Electrolytic Capacitor
220 mF / 25 V
various
CMS Cap
1 nF
various
C27
Through Hole
470 pF / 100 V
various
2.2 nF Y2 Capacitor
DE2E3KH222MA3B
muRata
C18, C29
Electrolytic Capacitor
UPM1E471MPD
Nichicon
CMS Cap
1 mF
various
C22
CMS Cap
680 nF
various
C5, C23
CMS Cap
10 nF
various
C28
Electrolytic Capacitor
100 mF / 50 V
various
C32
Through Hole
100 nF
various
C39
CMS Cap
100 nF
various
D1
PFC Diode
MUR460RLG
ON Semiconductor
DO-35 Diode
1N4148
various
D14
Schottky Diode
1N5817
ON Semiconductor
D3, D9
16 V Zener Diode
1N5930
ON Semiconductor
D18, D20
16 V Zener Diode
1SMA5930BT3G
ON Semiconductor
D16
BZX79-C3V0
ON Semiconductor
D6, D7
MBR20100CT
ON Semiconductor
D12, D13
Demagnetization Diodes
MUR160RLG
ON Semiconductor
D15
Rectifier
1N4934RLG
ON Semiconductor
HS1_M1, HS3_D6
Heatsink
KL195/25.4SW
Schaffner
HS1_X31, HS2_X24
Heatsink
KL194/25.4SW
Schaffner
L1
DMT2-26-11L
26 mH power choke
CoilCraft
M1
PFC MOSFET
SPP20N60S5
Infineon
Q1, Q2
BC369
ON Semiconductor
D19, D21, D11, R45, R56 are replaced by straps (short circuit)
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204
AND8292
BILL OF MATERIALS
Q1x
BC846B
ON Semiconductor
Q5, Q6, Q7
BC368
ON Semiconductor
1.8 MW
various
R2
150 W
various
R12, R39
47 W
various
R6
2.4 kW
various
R7
3 W PFC CS Resistor
RLP3 0R1 1%
Vishay
R8
4.7 kW
various
10 kW
various
R13, R44
2.2 W
various
R15
62 kW
various
R17, R21
27 kW
various
R49
6.8 kW
various
22 kW
various
R23
820 kW
various
R24
560 kW
various
R25
W31-R27 JI
WELWYN
10 W
various
R28
47 kW
various
R29, R30
3.3 kW
various
R35
100 W / 4 W Resistor
SBCHE4
Meggitt CGS
1 kW
various
R42
100 W
various
R52
6.8 kW
various
R1x
43 kW
various
T1
PFC Coil
SICO 977
Sicoenergie
T2
Forward Transformer
SICO 978
Sicoenergie
U1
Diodes Bridge
KBU6K
General Semiconductor
U2
Forward Controller
NCP1217AD133R2G
ON Semiconductor
U3
PFC Controller
NCP1605
ON Semiconductor
X25
Q3903-A
CoilCraft
X29
Opto-Coupler
SFH6156-2
Infineon
X30
TL431CLPG
ON Semiconductor
X24, X31
Forward MOSFET
SPP11N60S5
Infineon
F1
4 A Fuse
various
various
D19, D21, D11, R45, R56 are replaced by straps (short circuit)
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205
Notes
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206
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May-07
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