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SPECIFICATIONS OF PHOTONIC DEVICES

RING RESONATORS
Diameter

10 m [1],[4], [9]
80 m [3]
12 m [10]

Quality Factor

2290 [1]
11300 [3]
20000 [6]

Photon Lifetime

1.8 ps [1]
9.3 ps [3]

Temporal Response

< few ps [1]


132 ps [3]
30 ps [10]

Extinction Ratio

18 dB on resonance at Through port [3]


10 dB [4]
> 9 dB [6]

FSR

4 THz [9]

Through Loss

0.0001-0.01 dB [9]

Drop Loss

1.5 dB [9]

SWITCH ELEMENT
Pass Band Insertion Loss 2.5 dB [10]
Switching Time

< 2 ns [10]

Area

40x12 m2 [10]

Data-rate

40 Gbps [10]

Switch Consumption

10 mW for broadband signals [10]

Crosstalk

> 20 dB [10]

MODULATORS
Modulation Depth

75% - 100 % [1]


10 dB [3]

Delay

30.4 ps [4]

Insertion Loss

1 dB [4], [5]
0-1 dB [9]
1.5 dB [10]

Capacitance

50 fF [4]

Energy

25 fJ [5]
1 pJ for single-wavelength signals [10]

Consumption

25 mW @1 GHz [5]
0.5 mW DC [10]

Area

< 50 m2 [5]

Data-rate

12.5 Gbps [6]


10 Gbps [9]

Bias Voltage

1.8 V [6]

DC current

58 A [6]

Driver Consumption

117 W [4]

Driver Delay

25.8 ps [4]

PHOTODETECTOR
Response Time

< 20 ps [1]
0.6 ps [4]

Responsivity

0.31-0.32 A/W @1550 nm with 0.5-3 V reverse bias voltage [2]


> 1 A/W @ 1GHz [5]
0.89 A/W @31.3 GHz [7]
1.16 A/W @29.4 GHz [7]

Quantum Efficiency

90 % @3 V @1550 nm [2]
80 % [4]
71 % @31.3 GHz [7]
93 % @29.4 GHz [7]
75 % @1550 nm [8]

Area

< 20 m2 [5]
7.4 m x 50 m @31.3 GHz [7]
4.4 m x 100 m @29.4 GHz [7]

Absorption Coefficient

1594 cm-1 @0 V [2]

1-dB Saturation Power

1.8-8.8 mW @0-1 V [2]

Dark Current

50-200 nA @1-4 V [2]


169 nA @31.3 GHz @1550 nm [7]
267 nA @29.4 GHz @1550 nm [7]

Resistance

11 Ohm [2]

Capacitance

7.5 pF @0 V [2]
100 fF [4]
1 fF [5]

Bandwidth

10 GHz when Quantm Efficiency is 50 % [2]


40 Gbps @-2 V [7]
12.8 GHz @1550 nm [8]

Loss

0.1 dB [9]

Amplifier Delay

10.4 ps [4]

TIA Consumption

257 W [4]

WAVEGUIDE
Width

450 nm [1]
500 nm [4]

Height

250 nm [1]

Separation

5 m [4]

Time of Flight

10.45 ps/mm [4]

Insertion Loss

1.3 dB/cm [4]

Wavelengths

128 [9]

LASER
Consumption

1.5 W [5]

Optical Power On-Chip

0.2 W [5]

[1] V. R. Almeida, C. A. Barrios, R. R. Panepucci, M. Lipson, M. A. Foster, D. G. Ouzounov, and A.


L. Gaeta. All-Optical Switching on a Silicon Chip.
[2] H. Park, Y. hao Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers. A
Hybrid AlGaInAs-Silicon Evanescent Preamplifier and Photodetector.
[3] K. Preston, P. Dong, B. Schmidt, and M. Lipson. High-Speed All-Optical Modulation Using
Polycrystalline Silicon Microring Resonators.
[4] Nevin Krman, Meyrem Krman, Rajeev K. Dokania, Jose F. Martnez, Alyssa B. Apsel, Matthew
A. Watkins, David H. Albonesi. Leveraging Optical Technology in Future Bus-based Chip
Multiprocessors.
[5] George Kurian, Jason E. Miller, James Psota, Jonathan Eastep, Jifeng Liu, Jurgen Michel,
Lionel C. Kimerling, Anant Agarwal. ATAC: A 1000-Core Cache-Coherent Processor with On-Chip
Optical Network.
[6] Qianfan Xu, Sasikanth Manipatruni, Brad Schmidt, Jagat Shakya, and Michal Lipson. 12.5
Gbit/s carrier-injection-based silicon microring silicon modulators.
[7] Tao Yin1, Rami Cohen, Mike M. Morse, Gadi Sarid, Yoel Chetrit, Doron Rubin, and Mario J.
Paniccia. 40Gb/s Ge-on-SOI waveguide photodetectors by selective Ge growth.
[8] O.I.Dosunmu, M. K. Emsley, M. S. Unlu, D. DCannon, and L. C. Kimerling. High speed resonant
cavity enhanced ge photodetectors on si reflecting substrates for 1550 nm operation.
[9] Ajay Joshi, Christopher Batten, Yong-Jin Kwon, Scott Beamer, Imran Shamim,Krste Asanovic,
Vladimir Stojanovic. Silicon-Photonic Clos Networks for Global On-Chip Communication.
[10] Assaf Shacham, Keren Bergman and Luca P. Carloni. Photonic Networks-on-Chip for Future
Generations of Chip Multiprocessors.

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