Documente Academic
Documente Profesional
Documente Cultură
Maxim Ershov
Silicon Frontline Technology, 595 Millich Dr., Campbell, CA 95008, USA
Phone: 1-408-963-6916, Fax: 1-408-963-6906, E-mail: maxim@siliconfrontline.com
Abstract
This application note describes characteristics and design challenges of metal-oxide-metal
(MOM) interdigitated capacitors and circuits containing MOMs. It also explains how the MOM
capacitor design can be facilitated using F3D a parasitic extraction tool based on a random
walk method.
to-wafer, and lot-to-lot. Design kits should provide models describing statistical properties of
MOM capacitors to optimize matching characteristics, for centering process targets, and to
improve yield.
350
70
300
60
Quality factor
Capacitance (fF)
400
250
200
150
Measurement
F3D
50
40
30
20
100
Measurement
50
10
F3D
0
0
10
Frequency (GHz)
15
20
10
15
Frequency (GHz)
Fig. 2. Measured and simulation capacitance and quality factor of MOM capacitor (40nm technology).
1250
5.0
1000
4.0
750
500
3.0
F3D simulation
Measurement
Difference
2.0
250
Difference (%)
Capacitance (fF)
Comparison of F3D-simulated capacitances for MOM capacitors with different sizes with
experimental data are shown in Fig.3. These results were obtained without any fitting of the
simulations, and the observed difference of ~3.5% can be attributed to manufacturing/process
variations.
1.0
0.0
small
medium
large
MOM capacitor
20