PD - 95872

IRF2907Z
IRF2907ZS
IRF2907ZL

AUTOMOTIVE MOSFET

HEXFET Power MOSFET

Features
l
l
l
l
l

Advanced Process Technology

Ultra Low On-Resistance
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

VDSS = 75V
RDS(on) = 4.5m

Description

ID = 75A

Specifically designed for Automotive applications,

this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety of other applications.

D2Pak
IRF2907ZS

TO-220AB
IRF2907Z

TO-262
IRF2907ZL

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

170

ID @ TC = 100C

Continuous Drain Current, VGS @ 10V (See Fig. 9)

120

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V (Package Limited)

75

IDM

Pulsed Drain Current

680

PD @TC = 25C

Maximum Power Dissipation

330

Linear Derating Factor

VGS
EAS

Gate-to-Source Voltage

2.2
20

W/C
V

300

mJ

EAS (tested)

Single Pulse Avalanche Energy Tested Value

Single Pulse Avalanche Energy (Thermally Limited)

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

TJ

Operating Junction and

TSTG

Storage Temperature Range

-55 to + 175

A
C

300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

10 lbfin (1.1Nm)

Thermal Resistance
Parameter

RJC

Junction-to-Case

RCS

Case-to-Sink, Flat, Greased Surface

RJA

Junction-to-Ambient

RJA

Junction-to-Ambient (PCB Mount, steady state)

See Fig.12a,12b,15,16

mJ

Soldering Temperature, for 10 seconds

690

jk

Typ.

Max.

Units

0.45

C/W

0.50

62

40

HEXFET is a registered trademark of International Rectifier.

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1
06/17/04

IRF2907Z/S/L
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS
VDSS/TJ
RDS(on)
VGS(th)

Min. Typ. Max. Units

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance

75

2.0
180

0.069
3.5

180
46
65
19
140
97
100
5.0

4.5
4.0

20
250
200
-200
270

LS

Internal Source Inductance

13

Ciss
Coss
Crss
Coss
Coss
Coss eff.

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance

7500
970
510
3640
650
1020

gfs
IDSS
IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current

f
f

6mm (0.25in.)
from package
pF

Diode Characteristics
Parameter
Continuous Source Current

75

ISM

(Body Diode)
Pulsed Source Current

680

VSD
trr
Qrr
ton

(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time

41
59

1.3
61
89

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25C,
L=0.11mH, RG = 25, IAS = 75A, VGS =10V.
Part not recommended for use above this value.
ISD 75A, di/dt 340A/s, VDD V(BR)DSS,
TJ 175C.
Pulse width 1.0ms; duty cycle 2%.

S
and center of die contact
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 60V, = 1.0MHz
VGS = 0V, VDS = 0V to 60V

Min. Typ. Max. Units

IS

c

Conditions

V VGS = 0V, ID = 250A

V/C Reference to 25C, ID = 1mA
m VGS = 10V, ID = 75A
V VDS = VGS, ID = 250A
S VDS = 25V, ID = 75A
A VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125C
nA VGS = 20V
VGS = -20V
ID = 75A
nC VDS = 60V
VGS = 10V
ns VDD = 38V
ID = 75A
RG = 2.5
VGS = 10V
D
nH Between lead,

Conditions
MOSFET symbol

V
ns
nC

showing the
integral reverse

p-n junction diode.

TJ = 25C, IS = 75A, VGS = 0V
TJ = 25C, IF = 75A, VDD = 38V
di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Coss eff. is a fixed capacitance that gives the same

charging time as Coss while VDS is rising from 0 to 80% VDSS.

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

This value determined from sample failure population. 100%

tested to this value in production.

This is applied to D2Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

soldering techniques refer to application note #AN-994.
R is measured at TJ of approximately 90C.

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IRF2907Z/S/L
1000

10000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

1000
BOTTOM

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

100

100

4.5V

10

4.5V

60s PULSE WIDTH

60s PULSE WIDTH

Tj = 175C

Tj = 25C

1
0.1

10

10

0.1

100

Fig 1. Typical Output Characteristics

10

100

Fig 2. Typical Output Characteristics

1000

200
Gfs, Forward Transconductance (S)

ID, Drain-to-Source Current ()

V DS, Drain-to-Source Voltage (V)

V DS, Drain-to-Source Voltage (V)

T J = 175C

100

10

T J = 25C

1
VDS = 25V
60s PULSE WIDTH
0.1

T J = 25C
150

T J = 175C

100

50
V DS = 10V
380s PULSE WIDTH
0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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10

25

50

75

100

125

150

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

IRF2907Z/S/L
100000

12.0

VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd

ID= 90A

10000

Ciss
Coss
Crss

1000

VDS= 60V
VDS= 38V

10.0

VGS, Gate-to-Source Voltage (V)

C, Capacitance(pF)

C oss = C ds + C gd

VDS= 15V

8.0
6.0
4.0
2.0

100

0.0
1

10

100

VDS, Drain-to-Source Voltage (V)

150

200

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

10000

ID, Drain-to-Source Current (A)

1000

ISD, Reverse Drain Current (A)

100

QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000

T J = 175C
100

TJ = 25C

10

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100
100sec
10
1msec
1

10msec

Tc = 25C
Tj = 175C
Single Pulse

VGS = 0V
0.1

1
0.0

0.5

1.0

1.5

2.0

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

50

2.5

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRF2907Z/S/L
180
160

RDS(on) , Drain-to-Source On Resistance

(Normalized)

2.5

Limited By Package

ID, Drain Current (A)

140
120
100
80
60
40
20
0

ID = 90A
VGS = 10V
2.0

1.5

1.0

0.5

25

50

75

100

125

150

-60 -40 -20 0

175

20 40 60 80 100 120 140 160 180

T J , Junction Temperature (C)

T C , Case Temperature (C)

Fig 10. Normalized On-Resistance

vs. Temperature

Fig 9. Maximum Drain Current vs.

Case Temperature

Thermal Response ( Z thJC )

D = 0.50
0.20
0.10

0.1

0.05
0.02
0.01

0.01

R1
R1
J
1

C
1

Ri (C/W) i (sec)
0.251
0.000457
0.199

0.003019

Ci= i/Ri
Ci i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

0.001

R2
R2

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.0001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF2907Z/S/L

DRIVER

VDS

D.U.T

RG
VGS
20V

+
V
- DD

IAS
tp

0.01

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

EAS , Single Pulse Avalanche Energy (mJ)

1200
15V

ID
TOP
10A
14A
BOTTOM 75A

1000

800

600

400

200

tp

0
25

50

75

100

125

150

175

Starting T J , Junction Temperature (C)

I AS

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

QG

10 V
QGS

QGD
4.0

Charge

Fig 13a. Basic Gate Charge Waveform

L
DUT

1K

Fig 13b. Gate Charge Test Circuit

VCC

VGS(th) Gate threshold Voltage (V)

VG
3.5

3.0

2.5

ID = 250A

2.0

1.5

1.0
-75 -50 -25

25

50

75 100 125 150 175 200

T J , Temperature ( C )

Fig 14. Threshold Voltage vs. Temperature

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IRF2907Z/S/L
100

Duty Cycle = Single Pulse

Avalanche Current (A)

0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25C due to
avalanche losses

0.05
10

0.10

1
1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

350

TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A

EAR , Avalanche Energy (mJ)

300
250
200
150
100
50
0
25

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

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175

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav

IRF2907Z/S/L

D.U.T

Driver Gate Drive

P.W.

D.U.T. ISD Waveform

Reverse
Recovery
Current

V DD

dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test

P.W.
Period

RG

D=

VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

Period

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
ISD

Ripple 5%

VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

V DS
V GS
RG

RD

D.U.T.
+

-V DD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on)

tr

t d(off)

tf

Fig 18b. Switching Time Waveforms

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IRF2907Z/S/L
TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

2.87 (.113)
2.62 (.103)

10.54 (.415)
10.29 (.405)

-B-

3.78 (.149)
3.54 (.139)

4.69 (.185)
4.20 (.165)

-A-

1.32 (.052)
1.22 (.048)

6.47 (.255)
6.10 (.240)

4
15.24 (.600)
14.84 (.584)

LEAD ASSIGNMENTS

1.15 (.045)
MIN
1

14.09 (.555)
13.47 (.530)

IGBTs, CoPACK

2 - DRAIN
1- GATE
3 - SOURCE
2- DRAIN
3- SOURCE
4 - DRAIN
4- DRAIN

1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR

4.06 (.160)
3.55 (.140)

3X
1.40 (.055)
3X
1.15 (.045)

LEAD ASSIGNMENTS

HEXFET
1 - GATE

0.93 (.037)
0.69 (.027)

0.36 (.014)

3X
M

B A M

2.92 (.115)
2.64 (.104)

2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH

0.55 (.022)
0.46 (.018)

3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
Note: "P" in assembly line
position indicates "Lead-Free"

,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(

www.irf.com

3$57180%(5
'$7(&2'(
<($5 
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IRF2907Z/S/L
D2Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

7+,6,6$1,5)6:,7+
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(/
1RWH3LQDVVHPEO\OLQH
SRVLWLRQLQGLFDWHV/HDG)UHH

10

,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(

3$57180%(5
)6
'$7(&2'(
<($5 
:((.
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IRF2907Z/S/L
TO-262 Package Outline

Dimensions are shown in millimeters (inches)

1- GATE

IGBT

2- COLLECTOR
3- EMITTER

TO-262 Part Marking Information

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IRF2907Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)

FEED DIRECTION 1.85 (.073)

1.65 (.065)

1.60 (.063)
1.50 (.059)

11.60 (.457)
11.40 (.449)

0.368 (.0145)
0.342 (.0135)

15.42 (.609)
15.22 (.601)

24.30 (.957)
23.90 (.941)

TRL
10.90 (.429)
10.70 (.421)

1.75 (.069)
1.25 (.049)

4.72 (.136)
4.52 (.178)

16.10 (.634)
15.90 (.626)

FEED DIRECTION

13.50 (.532)
12.80 (.504)

27.40 (1.079)
23.90 (.941)
4

330.00
(14.173)
MAX.

NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

60.00 (2.362)
MIN.

26.40 (1.039)
24.40 (.961)
3

30.40 (1.197)
MAX.
4

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04

12

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/