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MDF13N50 N-channel MOSFET 500V
MDF13N50
N-Channel MOSFET 500V, 13.0 A, 0.5
General Description
Features
The MDF13N50 uses advanced MagnaChips MOSFET

Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF13N50 is suitable device for SMPS, high Speed
switching and general purpose applications.

Applications

VDS = 500V
VDS = 550V @ Tjmax
ID = 13.0A
@ VGS = 10V
RDS(ON) 0.5
@ VGS = 10V
Power Supply
HID
Lighting
Absolute Maximum Ratings (Ta = 25oC)

Characteristics
Symbol
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
TC=25 C
o
VDSS
500
550
VGSS
30
13
8.2
52
41
0.33
W
W/ oC
Dv/dt
4.5
V/ns
EAS
580
mJ
TJ, Tstg
-55~150
Symbol
Rating
RJA
62.5
RJC
3.05
ID
TC=100 C
Pulsed Drain Current(1)
IDM
TC=25oC
Power Dissipation
Derate above 25 oC
Peak Diode Recovery dv/dt(3)

Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Unit
VDSS @ Tjmax
Continuous Drain Current ()
Rating
PD
Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
(1)
Thermal Resistance, Junction-to-Case
Nov2009. Version 1.2
Unit
o
C/W
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.0PDF.com
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDF13N50TH
-55~150oC
TO-220F
Tube
Halogen Free
Electrical Characteristics (Ta =25oC)

Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250A, VGS = 0V
500
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
3.0
5.0
IDSS
VDS = 500V, VGS = 0V
IGSS
VGS = 30V, VDS = 0V
Drain Cut-Off Current

Gate Leakage Current
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 6.5A
gfs
VDS = 40V, ID = 6.5A
Forward Transconductance
100
nA
0.39
0.5
13
33
10.4
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
13
Input Capacitance
Ciss
1390
VDS = 400V, ID = 13A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Crss
6.3
Output Capacitance
Coss
173
Turn-On Delay Time
td(on)
30.2
52.8
60.8
tf
33.8
IS
13
Rise Time
tr
Turn-Off Delay Time

Fall Time
td(off)
VGS = 10V, VDS = 250V, ID = 13A,

RG = 25(3)
nC
pF
ns
Drain-Source Body Diode Characteristics

Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
VSD
trr
IS = 13A, VGS = 0V
IF = 13A, dl/dt = 100A/s(3)
Qrr
1.4
325
ns
2.9
Note :
1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C.
3. ISD 9.0A, di/dt200A/us, VDD=50V, Rg =25, Starting TJ=25C
4. L=6.2mH, IAS=13.0A,
VDD=50V, Rg =25, Starting TJ=25C
0.9
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
25
20
0.8
RDS(ON) [ ]
ID,Drain Current [A]
30
15
10
Notes
1. 250 Pulse Test
2. TC=25
0.7
0.6
VGS=10.0V
VGS=20V
0.5
0.4
5
10
15
20
10
VDS,Drain-Source Voltage [V]
20
25
30
35
ID,Drain Current [A]
Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
1.8
Notes :
1. VGS = 10 V
2. ID = 5 A
1.6
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
RDS(ON), (Normalized)
Drain-Source On-Resistance
15
1.4
VGS=10V
1.2
VGS=4.5V
1.0
0.8
0.6
-50
-25
25
50
75
100
125
Notes :
1. VGS = 0 V
2. ID = 250
1.1
1.0
0.9
0.8
-50
150
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with

Temperature
Fig.4 Breakdown Voltage Variation vs.

Temperature
100
Notes :
1. VGS = 0 V
2. ID = 250
IDR
Reverse Drain Current [A]
* Notes ;
1. VDS=30V
ID [A]
10
150
25
150
10
25
-55
0.1
0.0
1
4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature
3000
100V
250V
400V
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
Coss
2800
Note : ID = 13.0A
2600
2400
2200
Capacitance [pF]
VGS, Gate-Source Voltage [V]
10
Ciss
2000
1800
1600
1400
1200
800
Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
600
400
0
200
0
0
0.1
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
10
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
14
10 s
12
Operation in This Area

is Limited by R DS(on)
1
ID, Drain Current [A]
ID, Drain Current [A]
10
100 s
1 ms
10 ms
100 ms
DC
10
10
-1
Single Pulse
TJ=Max rated
TC=25
10
10
0
25
-2
10
-1
10
10
10
50
75
100
125
150
TC, Case Temperature []
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case

Temperature
14000
single Pulse
RthJC = 3.0/W
TC = 25
10
12000
D=0.5
10000
0.2
Power (W)
Z JC(t),
Normalized Thermal Response
0.1
-1
10
0.05
0.02
single pulse
6000
4000
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Z JC* R JC(t) + TC
R JC=3.0/W
0.01
8000
2000
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
0
1E-5
10
t1, Rectangular Pulse Duration [sec]
1E-3
0.01
0.1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power

Dissipation
Fig.11 Transient Thermal Response Curve
1E-4
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
R
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Worldwide Sales Support Locations

U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
E-Mail : usasales@magnachip.com
China
Hong Kong Office
Suite 1024, Ocean Centre 5 Canton Road,
Tsim Sha Tsui Kowloon, Hong Kong
Tel : 852-2828-9700
Fax : 852-2802-8183
E-Mail : chinasales@magnachip.com
U.K
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
E-Mail : uksales@magnachip.com
Shenzhen Office
Room 2003B, 20/F
International Chamber of Commerce Tower
Fuhua Road3 CBD, Futian District, China
Tel : 86-755-8831-5561
Fax : 86-755-8831-5565
Japan
Osaka Office
3F, Shin-Osaka MT-2 Bldg 3-5-36
Miyahara Yodogawa-Ku
Osaka, 532-0003 Japan
Tel : 81-6-6394-9160
Fax : 81-6-6394-9150
E-Mail : osakasales@magnachip.com
Shanghai Office
Room E, 8/F, Liaoshen International Building 1068
Wuzhong Road, (C) 201103
Shanghai, China
Tel : 86-21-6405-1521
Fax : 86-21-6505-1523
Korea
891, Daechi-Dong, Kangnam-Gu
Seoul, 135-738 Korea
Tel : 82-2-6903-3451
Fax : 82-2-6903-3668 ~9
Email : koreasales@magnachip.com
Taiwan R.O.C
2F, No.61, Chowize Street, Nei Hu
Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
E-Mail : taiwansales@magnachip.com
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.

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MDF13N50 N-channel MOSFET 500V

The MDF13N50 uses advanced MagnaChips MOSFET

Absolute Maximum Ratings (Ta = 25oC)

Peak Diode Recovery dv/dt(3)

Continuous Drain Current ()

Id limited by maximum junction temperature

Thermal Resistance, Junction-to-Case

Nov2009. Version 1.2

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

MDF13N50 N-channel MOSFET 500V

Electrical Characteristics (Ta =25oC)

Gate Threshold Voltage

VDS = VGS, ID = 250A

VDS = 500V, VGS = 0V

VGS = 30V, VDS = 0V

Drain Cut-Off Current

VGS = 10V, ID = 6.5A

VDS = 40V, ID = 6.5A

VDS = 400V, ID = 13A, VGS = 10V(3)

VDS = 25V, VGS = 0V, f = 1.0MHz

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-Off Delay Time

VGS = 10V, VDS = 250V, ID = 13A,

Drain-Source Body Diode Characteristics

Nov2009. Version 1.2

VDD=50V, Rg =25, Starting TJ=25C

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

ID,Drain Current [A]

MDF13N50 N-channel MOSFET 500V

VDS,Drain-Source Voltage [V]

ID,Drain Current [A]

Fig.2 On-Resistance Variation with

Fig.1 On-Region Characteristics

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with

Fig.4 Breakdown Voltage Variation vs.

VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics

Nov2009. Version 1.2

Fig.6 Body Diode Forward Voltage

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

MDF13N50 N-channel MOSFET 500V

Ciss = Cgs + Cgd (Cds = shorted)

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Fig.7 Gate Charge Characteristics

VDS, Drain-Source Voltage [V]

Fig.8 Capacitance Characteristics

Operation in This Area

ID, Drain Current [A]

ID, Drain Current [A]

TC, Case Temperature []

VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Case

t1, Rectangular Pulse Duration [sec]

Pulse Width (s)

Fig.12 Single Pulse Maximum Power