Discuss The BJT small-signal model

The small signal model of the BJT amplifier is shown in figure . These models are
valid for both NPN and PNP transistors.For the same operating point, the BJT has
higher transconductance and higher output resistance that the MOSFET.

(a)

(b)

(c)

Figure small signal-models of the BJT

The BJT small-signal parameters may be summarized in Table 3
Table BJT small signal parameters

(d)

Symbol

Parameter

Transconductance
gm

re

ro

Value

I
gm C
VT
VT is the thermal voltage = kT/q, which
equals 25mV at room temperature.
k is Boltzman's constant
T is the absolute temperature in Kelvins
q is the electron charge

Base input resistance

V
VT

T
IB
gm
I C
is the common-emitter current gain

Emitter input resistance

V
VT

T
IE
gm
I C
is the common-base current gain

Output resistance

re

ro

V A V CE

IC

VA

IC

VA is the early voltage.

Discuss The BJT high-frequency model

Figure 1 The high-frequency hybrid- model of the BJT

 Typically, the base-emitter junction capacitance C is in the range of few pF to few

tens of pF, while the collector-base junction capacitance C is in the range of
fraction of pF to few pF The base resistor rx is added partly to account for the
comparatively long internal connection from the base external connection and the
actual internal base connection. Note that rx becomes the dominant input
resistance for frequencies so high that C effectively short-circuits r.
A second base-width modulation effect, characterized by a resistor connected
between the base and collector is omitted; its influence is dominated by the
collector junction reverse-bias capacitance C.The emitter junction (diffusion)
capacitance C represents the charge store to support the current flow across the
base.
Discuss The BJT Cutoff frequency
The frequency at which the current gain of the transistor becomes one. (i.e. no
more active element). It is calculated by finding the short circuit collector current
in terms of the base current.
Using the high frequency model of BJT we can draw the circuit to estimate the
cut-off frequency of the BJT as shown in Figure .

Figure Circuit used to estimate the BJT cutoff frequency

Applying nodal analysis at the input and output nodes as we did earlier. We can
estimate the cut-off frequency as follows:
V
s C V s C V
r
V
I b s (C C ) V
r
g m sC
I
hfe c
1
Ib
s (C C )
r
Ib

Assuming
Assuming
hfe

o
s
1
p

g m r
1 s (C C ) r
g m r
g m sC hfe
1 s (C C ) r
1
where p
(C C )r

g m sC

hfe

Unity gain bandwidth

(T ) o p

gm
(C C )
hfe

hfe
hfe

g m sC
Ic

1
Ib
s (C C )
r
g m r
1 s (C C )r

o
s
1
p

assuming g m sC

where p

1
(C C )r

Unity gain bandwidth (T ) o p

gm
(C C )

We can observe from the last analysis that the common-emitter current gain (h fe)
frequency response is similar to a simple pole with p as the pole frequency. This
may be drawn as shown in Figure 8

Fig-8 in (Lec_03_Ver_01.vsd)
Figure 2 Bode plot of |hfe|

As we can see from the last equation. Higher T means higher gm and lower
internal BJT capacitances which means better amplifier operation.
Typically, fT is ranging from about 100MHz to Tens of GHz.