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SEMICONDUCTOR TECHNICAL DATA

 
 

 


 


  



20 AMPERES
VOLTAGE CLAMPED
NCHANNEL IGBT
Vce(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)

This Logic Level Insulated Gate Bipolar Transistor (IGBT)

features GateEmitter ESD protection, GateCollector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
Temperature Compensated GateDrain Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability

G
G
C

Rge

CASE 221A06, Style 9

TO220AB

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCES

CLAMPED

Vdc

CollectorGate Voltage

VCGR

CLAMPED

Vdc

VGE

CLAMPED

Vdc

IC

20

Adc

ICR

12

Apk

PD

150

Watts

ESD

3.5

kV

TJ, Tstg

55 to 175

RqJC
RqJA

1.0
62.5

C/W

TL

275

GateEmitter Voltage
Collector Current Continuous @ TC = 25C
Reversed Collector Current pulse width

t 100 ms

Total Power Dissipation @ TC = 25C (TO220)

Electrostatic Voltage GateEmitter
Operating and Storage Temperature Range

THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case (TO220)
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds

10 lbfin (1.13 Nm)

Mounting Torque, 632 or M3 screw

UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS

Single Pulse CollectorEmitter Avalanche Energy
@ Starting TJ = 25C
@ Starting TJ = 150C

EAS

mJ
550
150

SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1

TMOS
Motorola
Motorola, Inc.
1997

Power MOSFET Transistor Device Data

MGP20N40CL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

370

405

430

500
100

Unit

OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(IClamp = 10 mA, TJ = 40 to 150C)

BVCES

Zero Gate Voltage Collector Current

(VCE = 350 V, VGE = 0 V, TJ = 150C)
(VCE = 15 V, VGE = 0 V, TJ = 150C)

ICES

Resistance GateEmitter (TJ = 40 to 150C)

RGE

10k

16k

30k

GateEmitter Breakdown Voltage (IG = 2 mA)

BVGES

11

13

15

"V

ICES

50

mA

BVCER

26

40

120

1.0
0.75

1.7

2.2
1.8

1.1
1.4
1.4

1.4
1.9
1.8

gfs

10

18

pF

CollectorEmitter Reverse Leakage (VCE = 15 V, TJ = 150C)

CollectorEmitter Reversed Breakdown Voltage (IE = 75 mA)

Vdc

mA
W

ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150C)

VGE(th)

CollectorEmitter OnVoltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150C)

VCE(on)

Forward Transconductance (VCE

u 5.0 V, IC = 10 A)

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance

(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)

Transfer Capacitance

Ciss

2800

Coss

200

Crss

25

SWITCHING CHARACTERISTICS (1)

Total Gate Charge
GateEmitter Charge

Qg

45

80

Qgs

8.0

Qgd

20

( CC = 320 V,, IC = 20 A,,

(V
L = 200 mH, RG = 1 KW)

td(off)

14

tf

4.0

((VCC = 14 V,, IC = 20 A,,

L = 200 mH, RG = 1 KW)

td(on)

2.0

tr

6.0

(VCC = 280 V,
V IC = 20 A,
A
VGE = 5 V)

GateCollector Charge
TurnOff Delay Time
Fall Time
TurnOn Delay Time
Rise Time

nC

(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

Motorola TMOS Power MOSFET Transistor Device Data

MGP20N40CL
TYPICAL ELECTRICAL CHARACTERISTICS
40

VGE = 10 V
I C , COLLECTOR CURRENT (AMPS)

TJ = 25C

30
4V
20

10
3V
0

I C , COLLECTOR CURRENT (AMPS)

20

3V

10

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics, TJ = 25C

Figure 2. Output Characteristics, TJ = 125C

VCE = 10 V
30

20
TJ = 125C

25C

10

4V

40

TJ = 125C

5V

30

10

VCE , COLLECTORTOEMITTER VOLTAGE (VOLTS)

I C , COLLECTOR CURRENT (AMPS)

40

5V

VGE = 10 V

10

2.2
VGE = 5 V
2.0

IC = 20 A

1.8
15 A
1.6
10 A

1.4
1.2
1.0
50

50

100

VGE, GATETOEMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Transfer Characteristics

Figure 4. CollectortoEmitter Saturation

Voltage versus Junction Temperature

150

10000
TJ = 25C

C, CAPACITANCE (pF)

VGE = 0 V
Ciss

1000

Coss

100

Crss

10

1.0

25

50

75

100

125

150

175

200

COLLECTORTOEMITTER VOLTAGE (VOLTS)

Figure 5. Capacitance Variation

Motorola TMOS Power MOSFET Transistor Device Data

Qg

6
Qgs

Qgd

20

10

30

20

20
TF

10

1000

2000

10

3000

4000

Figure 7. Total Switching Losses

versus Gate Temperature

30
Td(off)
20

3
VDD = 320 V
VGE = 5 V
TJ = 25C
IC = 20 A

TF

10

1000

2000

3000

4000

2
1
0
5000

26
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
IC = 20 A

24
22

Td(off)

20

Eoff

18
16
14

TF

12
25

50

75

100

RG, GATE RESISTANCE (OHMS)

TC, CASE TEMPERATURE (C)

Figure 8. Total Switching Losses

versus Gate Resistance

Figure 9. Total Switching Losses

versus Case Temperature

Eoff

15

Td(off)

10

15

10

SWITCHING TIME ( m S)

20

4
125

20

25
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
TJ = 125C

0
5000

SWITCHING TIME ( m S)

SWITCHING TIME ( m S)

TOTAL SWITCHING ENERGY LOSSES (mJ)

30

40

30

Figure 6. GatetoEmitter and

CollectortoEmitter Voltage vs Total Charge

Eoff

20

Td(off)

RG, GATE RESISTANCE (OHMS)

25
TOTAL SWITCHING ENERGY LOSSES (mJ)

40

40

50
Eoff

Qg, TOTAL GATE CHARGE (nC)

40

60
VDD = 320 V
VGE = 5 V
TJ = 125C
IC = 20 A

50

TOTAL SWITCHING ENERGY LOSSES (mJ)

60

LATCH CURRENT (AMPS)

TJ = 25C
IC = 20 A

50

3 mH

16

12
10 mH

8.0

4.0

TF
5

TOTAL SWITCHING ENERGY LOSSES (mJ)

SWITCHING TIME ( mS)

VGE, GATETOEMITTER VOLTAGE (VOLTS)

MGP20N40CL

10

15

5
20

25

50

75

100

125

IC, COLLECTORTOEMITTER CURRENT (AMPS)

TEMPERATURE (C)

Figure 10. Total Switching Losses

versus Collector Current

Figure 11. Latch Current versus Temperature

Motorola TMOS Power MOSFET Transistor Device Data

MGP20N40CL
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE

1.0
D = 0.5
0.2
0.1
0.1

P(pk)

0.05
0.02

t1

0.01

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
1.0E 05

1.0E 04

1.0E 03

1.0E 02

RJC(t) = r(t) RJC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)

1.0E 01

1.0E+00

1.0E+01

t, TIME (s)

Figure 12. Thermal Response

PACKAGE DIMENSIONS

T
B

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

SEATING
PLANE

F
T

Q
1 2 3

STYLE 9:
PIN 1.
2.
3.
4.

H
K
Z
L

G
D
N

GATE
COLLECTOR
EMITTER
COLLECTOR

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

CASE 221A06
(TO220AB)
ISSUE Y

Motorola TMOS Power MOSFET Transistor Device Data

MGP20N40CL

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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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MGP20N40CL/D
Motorola TMOS Power MOSFET Transistor
Device Data

This datasheet has been download from:

www.datasheetcatalog.com
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