2N7002K

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
RDS(ON) max

ID max
TA = 25C

2 @ VGS = 10V

380mA

3 @ VGS = 5V

310mA

60V

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 1 and 2)
ESD Protected Up To 2kV
Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.

Motor control
Power Management Functions
Backlighting

Case: SOT23
Case Material: Molded Plastic, Green Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain

SOT23
D

Gate

Gate
Protection
Diode

ESD protected up to 2kV

Top View

Source

Equivalent Circuit

Top View

Ordering Information (Note 3)

Part Number
2N7002K-7
2N7002KQ-7
2N7002K-13
2N7002KQ-13
Notes:

Qualification
Commercial
Automotive
Commercial
Automotive

Case
SOT23
SOT23
SOT23
SOT23

Packaging
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.s Green policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.

C7K

K7K

Chengdu A/T Site

Date Code Key
Year
2006
Code
T
Month
Code

Jan
1

YM

Marking Information

YM

NEW PRODUCT

V(BR)DSS

Features and Benefits

K = SAT (Shanghai Assembly/ Test site)

C = CAT (Chengdu Assembly/ Test site)
7K= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)

Shanghai A/T Site

2007
U

2008
V

2009
W

2010
X

2011
Y

2012
Z

2013
A

2014
B

2015
C

2016
D

2017
E

Feb
2

Mar
3

Apr
4

May
5

Jun
6

Jul
7

Aug
8

Sep
9

Oct
O

Nov
N

Dec
D

2N7002K
Document number: DS30896 Rev. 10 - 2

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2N7002K

Maximum Ratings @TA = 25C unless otherwise specified

Characteristic

Symbol
VDSS
VGSS

NEW PRODUCT

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Steady
State
t<5s

Continuous Drain Current (Note 5) VGS = 5V

Steady
State
t<5s

TA = 25C
TA = 70C
TA = 25C
TA = 70C
TA = 25C
TA = 70C
TA = 25C
TA = 70C

ID

Value
60
20
380
300

ID

430
340

mA

ID

310
240

mA

mA

350
270
0.5
1.2

ID

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10s pulse, duty cycle = 1%) (Note 5)

Units
V
V

IS
IDM

mA
A
A

Thermal Characteristics @TA = 25C unless otherwise specified

Characteristic

Symbol
PD

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

Steady State
t<5s

RJA

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Value
370
357
292
540
240
197
91
-55 to 150

PD
Steady State
t<5s

RJA

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

RJC
TJ, TSTG

Units
mW
C/W
mW
C/W
C

Electrical Characteristics @TA = 25C unless otherwise specified

Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:

Symbol

Min

Typ

Max

Unit

BVDSS
IDSS
IGSS

60

1.0
10

V
A
A

VGS = 0V, ID = 10A

VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V

VGS(th)

1.0

1.6

2.5

2.0
3.0

1.1

ms
V

VDS = 10V, ID = 1mA

VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA

50
25
5.0

pF
pF
pF
m
nC
nC
nC
ns
ns
ns
ns

RDS (ON)

|Yfs|
VSD

80

0.75

Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

30
4.2
2.9
133
0.3
0.2
0.08
3.9
3.4
15.7
9.9

Test Condition

VDS = 25V, VGS = 0V

f = 1.0MHz
f = 1MHz , VGS = 0V, VDS = 0V
VGS = 4.5V, VDS = 10V,
ID = 250mA

VDD = 30V, VGS = 10V,

RG = 25, ID = 200mA

4. Device mounted on FR-4 PCB, with minimum recommended pad layout

5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.

2N7002K
Document number: DS30896 Rev. 10 - 2

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ID, DRAIN CURRENT (A)

NEW PRODUCT

2N7002K

1.0
0.8
0.6
0.4
0.2
0

1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics

VGS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

10

1.5

0.5

0.1

0
-50

75 100 125 150

-25
0
25
50
Tch , CHANNEL TEMPERATURE (C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature

ID, DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance vs. Drain Current

10

1
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

2N7002K
Document number: DS30896 Rev. 10 - 2

VGS, GATE SOURCE VOLTAGE (V)

Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage

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NEW PRODUCT

IDR, REVERSE DRAIN CURRENT (A)

2N7002K

IDR, REVERSE DRAIN CURRENT (A)

|Yfs|, FORWARD TRANSFER ADMITTANCE (S)

TCH, CHANNEL TEMPERATURE (C)

Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature

1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance vs. Drain Current

10
P(PK), PEAK TRANSIENT POIWER (W)

ID, DRAIN CURRENT (A)

RDS(on)
Limited
DC

0.1

PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms

0.01

PW = 100s
PW = 10s
T J(max) = 150C
T A = 25C
Single Pulse

0.001
0.1

1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Safe Operation Area

2N7002K
Document number: DS30896 Rev. 10 - 2

9
8
7

Single Pulse
RJA = 240C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)

6
5
4
3
2
1

100

0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation

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NEW PRODUCT

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.9
D = 0.7
D = 0.5
D = 0.3

0.1

D = 0.1
D = 0.05

D = 0.02

0.01

D = 0.01
D = 0.005

RJA(t) = r(t) * RJA

RJA = 240C/W
Duty Cycle, D = t1/t2

D = Single Pulse

0.001
0.000001 0.00001

0.0001

0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance

10

100

1,000

Package Outline Dimensions

A

SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0
8

All Dimensions in mm

B C

H
K

K1
D

Suggested Pad Layout

Y
Z

2N7002K
Document number: DS30896 Rev. 10 - 2

Dimensions Value (in mm)

Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35

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NEW PRODUCT

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Copyright 2012, Diodes Incorporated
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2N7002K
Document number: DS30896 Rev. 10 - 2

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