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BFP842ESD

Robust Low Noise Silicon Germanium Bipolar RF Transistor

Data Sheet
Revision 1.0, 2012-08-03

RF & Protection Devices

Edition 2012-08-03
Published by
Infineon Technologies AG
81726 Munich, Germany
2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

BFP842ESD

BFP842ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor


Revision History: 2012-08-03, Revision 1.0
Page

Subjects (major changes since last revision)

Trademarks of Infineon Technologies AG


AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET,
CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL,
EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, IRF,
ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA,
POWERCODE; PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC,
ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET,
thinQ!, TRENCHSTOP, TriCore.
Other Trademarks
Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL,
PRIMECELL, REALVIEW, THUMB, Vision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR
development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS,
FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG.
FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of
Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data
Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of
MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics
Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. muRata of MURATA
MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of
OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF
Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION
of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co.
TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX
of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas
Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11

Data Sheet

Revision 1.0, 2012-08-03

BFP842ESD

Table of Contents

Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1

Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5
5.1
5.2
5.3
5.4
5.5

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Data Sheet

11
11
11
12
15
18

Revision 1.0, 2012-08-03

BFP842ESD

List of Figures

List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 5-20
Figure 5-21
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4

Data Sheet

Total Power Dissipation Ptot = f ( TS ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


BFP842ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE ), IB = Parameter . . . . . . . . . . . . . . . . .
DC Current Gain hFE = f ( IC ), VCE = 2.5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Forward Voltage IC = f (VBE ), VCE = 2.5 V . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE ), VCE = 2.5 V . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB ), VCE = 2.5 V . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f ( IC ), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point at output OIP3 = f ( IC), ZS = ZL = 50 , VCE, f = Parameter . . . . . . . . .
3rd Order Intercept Point at output OIP3 [dBm] = f ( IC, VCE), ZS = ZL = 50 , f = 3.5 GHz . . . . . .
Compression Point at output OP1dB [dBm] = f ( IC, VCE), ZS = ZL = 50 , f = 3.5 GHz . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB ), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma,Gms, |S21|2 = f ( f ), VCE = 2.5 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f ( IC ), VCE = 2.5 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Reflection Coefficient S11 = f ( f ), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f (f ), VCE = 2.5 V, IC = 5 / 10 / 15 mA . . . . .
Input Reflection Coefficient S11 = f ( f ), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . .
Output Reflection Coefficient S22 = f ( f ), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f ( f ), VCE = 2.5 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f ( IC ), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC ), VCE = 2.5 V, ZS = 50 , f = Parameter in GHz . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Example (Marking BFP842ESD: T9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10
12
15
15
16
16
17
18
18
19
19
20
20
21
21
22
22
23
23
24
24
25
27
27
27
27

Revision 1.0, 2012-08-03

BFP842ESD

List of Tables

List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9

Data Sheet

Maximum Ratings at TA = 25C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9


Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 2.5 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 2.5 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 2.5 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 2.5 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 2.5 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 2.5 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 2.5 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision 1.0, 2012-08-03

BFP842ESD

Product Brief

Product Brief

The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5
GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.
The BFP842ESD provides inherently good input power match as well as inherently good noise match between
2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the
input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the
application. Integrated protection elements at in- and output make the device robust against ESD and excessive
RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry
standard package with visible leads.

Data Sheet

Revision 1.0, 2012-08-03

BFP842ESD

Features

Robust very low noise SiGe:C bipolar NPN RF Transistor


in easy to use industry standard package

Features
Robust very low noise amplifier based on Infineons reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness:
16 dBm maximum RF input power, 1 kV HBM ESD hardness
High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
High transition frequency fT = 60 GHz enables very low noise
figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V
(3.3 V, 3.6 V requires corresponding collector resistor)
Low power consumption, ideal for mobile applications
Easy to use Pb free (RoHS compliant) and halogen free industry standard
package with visible leads

Applications
As very low noise amplifier (LNA) in

Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo)
Satellite radio (SDARs, DAB and C-band LNB)
and C-band LNB (1st and 2nd stage LNA)
Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee

As discrete active mixer, buffer amplifier in VCOs


Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name

Package

BFP842ESD

SOT343

Data Sheet

Pin Configuration
1=B

2=E

3=C

Marking
4=E

T9s

Revision 1.0, 2012-08-03

BFP842ESD

Maximum Ratings

Maximum Ratings

Table 3-1

Maximum Ratings at TA = 25C (unless otherwise specified)

Parameter

Symbol

Collector emitter voltage

VCEO

Values
Min.

Max.

3.25
2.9

Unit

Note / Test Condition

TA = 25C
TA = -40C
Open base

1)

Collector emitter voltage

VCES

3.25
2.9

TA = 25C
TA = -40C
E-B short circuited

2)

Collector base voltage

VCBO

4.1
3.5

TA = 25C
TA = -40C
Open emitter

Base current

IB

-5

mA

Collector current

IC

40

mA

RF input power

PRFin

16

dBm

ESD stress pulse

VESD

-1

kV

HBM, all pins, acc. to


JESD22-A114

Total power dissipation3)

Ptot

120

mW

TS 111C

Junction temperature

TJ

150

Storage temperature

TStg

-55

150

1) VCES is identical to VCEO due to design


2) VCBO is similar to VCEO due to design
3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.

Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.

Data Sheet

Revision 1.0, 2012-08-03

BFP842ESD

Thermal Characteristics

Thermal Characteristics

Table 4-1

Thermal Resistance

Parameter

Symbol

Values
Min.

Typ.

Unit

Note / Test Condition

Max.

1)

Junction - soldering point


RthJS
324
K/W
1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

140
120

tot

[mW]

100
80
60
40
20
0

25

50

75
T [C]
S

100

125

150

Figure 4-1 Total Power Dissipation Ptot = f ( TS )

Data Sheet

10

Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

Electrical Characteristics

5.1

DC Characteristics

Table 5-1

DC Characteristics at TA = 25 C

Parameter

Symbol

Collector emitter breakdown voltage

V(BR)CEO

Values
Min.

Typ.

3.25

3.7

Unit

Note / Test Condition

IC = 1 mA , IB = 0

Max.
Open base

Collector emitter leakage current

ICES

400

nA

VCE = 2 V, VBE = 0
E-B short circuited

Collector base leakage current

ICBO

400

nA

VCB = 2V, IE = 0
Open emitter

Emitter base leakage current

IEBO

10

VEB = 0.5 V, IC = 0
Open collector

DC current gain

hFE

150

260

VCE = 2.5 V, IC = 15 mA

450

Pulse measured

5.2

General AC Characteristics

Table 5-2

General AC Characteristics at TA = 25 C

Parameter

Symbol

Values
Min.

Typ.

Unit

Note / Test Condition

Max.

Transition frequency

fT

57

GHz

VCE = 2.5 V, IC = 25 mA
f = 1 GHz

Collector base capacitance

CCB

64

fF

VCB = 2 V, VBE = 0
f = 1 MHz
Emitter grounded

Collector emitter capacitance

CCE

0.46

pF

VCE = 2 V, VBE= 0
f = 1 MHz
Base grounded

Emitter base capacitance

CEB

0.44

pF

VEB = 0.4V,VCB = 0
f = 1 MHz
Collector grounded

Data Sheet

11

Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

5.3

Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias Ts in a 50 system, TA = 25 C

VC
Top View
Bias -T

OUT
E

VB

Bias-T

(Pin 1)

IN

Figure 5-1 BFP842ESD Testing Circuit

Table 5-3

AC Characteristics, VCE = 2.5 V, f = 0.45 GHz

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.
dB

Power Gain
Maximum power gain
Transducer gain

Gms
|S21|2

33
29.5

Minimum Noise Figure


Minimum noise figure
Associated gain

NFmin
Gass

0.4
26

Linearity
1 dB compression point at output
3rd order intercept point at output

OP1dB
OIP3

6.5
22

Data Sheet

Note / Test Condition

IC = 15 mA
IC = 15 mA
dB

IC = 5 mA
IC = 5 mA
dBm

12

ZS = ZL = 50
IC = 15 mA
IC = 15 mA

Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

Table 5-4

AC Characteristics, VCE = 2.5 V, f = 0.9 GHz

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.
dB

Power Gain
Maximum power gain
Transducer gain

Gms
|S21|2

29
26

Minimum Noise Figure


Minimum noise figure
Associated gain

NFmin
Gass

0.45
24

Linearity
1 dB compression point at output
3rd order intercept point at output

OP1dB
OIP3

7
22.5

Table 5-5

dB

Symbol

Values
Min.

Typ.

Max.

IC = 5 mA
IC = 5 mA
dBm

ZS = ZL = 50
IC = 15 mA
IC = 15 mA

Unit

Note / Test Condition

dB

Power Gain
Maximum power gain
Transducer gain

Gms
|S21|2

25.5
23

Minimum Noise Figure


Minimum noise figure
Associated gain

NFmin
Gass

0.45
21

Linearity
1 dB compression point at output
3rd order intercept point at output

OP1dB
OIP3

7.5
23.5

IC = 15 mA
IC = 15 mA
dB

IC = 5 mA
IC = 5 mA
dBm

ZS = ZL = 50
IC = 15 mA
IC = 15 mA

Unit

Note / Test Condition

AC Characteristics, VCE = 2.5 V, f = 1.9 GHz

Parameter

Symbol

Values
Min.

Typ.

Max.
dB

Power Gain
Maximum power gain
Transducer gain

Gms
|S21|2

23.5
21

Minimum Noise Figure


Minimum noise figure
Associated gain

NFmin
Gass

0.5
19.5

Linearity
1 dB compression point at output
3rd order intercept point at output

Data Sheet

IC = 15 mA
IC = 15 mA

AC Characteristics, VCE = 2.5 V, f = 1.5 GHz

Parameter

Table 5-6

Note / Test Condition

IC = 15 mA
IC = 15 mA
dB

IC = 5 mA
IC = 5 mA
dBm

OP1dB
OIP3

8
24.5

13

ZS = ZL = 50
IC = 15 mA
IC = 15 mA

Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

Table 5-7

AC Characteristics, VCE = 2.5 V, f = 2.4 GHz

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.
dB

Power Gain
Maximum power gain
Transducer gain

Gms
|S21|2

22
19

Minimum Noise Figure


Minimum noise figure
Associated gain

NFmin
Gass

0.5
18

Linearity
1 dB compression point at output
3rd order intercept point at output

OP1dB
OIP3

8
25

Table 5-8

IC = 15 mA
IC = 15 mA
dB

IC = 5 mA
IC = 5 mA
dBm

ZS = ZL = 50
IC = 15 mA
IC = 15 mA

Unit

Note / Test Condition

AC Characteristics, VCE = 2.5 V, f = 3.5 GHz

Parameter

Symbol

Values
Min.

Typ.

Max.
dB

Power Gain
Maximum power gain
Transducer gain

Gma
|S21|2

17.5
16

Minimum Noise Figure


Minimum noise figure
Associated gain

NFmin
Gass

0.65
15

Linearity
1 dB compression point at output
3rd order intercept point at output

OP1dB
OIP3

8.5
25.5

Table 5-9

Note / Test Condition

IC = 15 mA
IC = 15 mA
dB

IC = 5 mA
IC = 5 mA
dBm

ZS = ZL = 50
IC = 15 mA
IC = 15 mA

Unit

Note / Test Condition

AC Characteristics, VCE = 2.5 V, f = 5.5 GHz

Parameter

Symbol

Values
Min.

Typ.

Max.
dB

Power Gain
Maximum power gain
Transducer gain

Gma
|S21|2

12.5
11.5

Minimum Noise Figure


Minimum noise figure
Associated gain

NFmin
Gass

0.85
10.5

Linearity
1 dB compression point at output
3rd order intercept point at output

IC = 15 mA
IC = 15 mA
dB

IC = 5 mA
IC = 5 mA
dBm

OP1dB
OIP3

8
24

ZS = ZL = 50
IC = 15 mA
IC = 15 mA

Notes
1. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 from 0.2 MHz to 12 GHz.

Data Sheet

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BFP842ESD

Electrical Characteristics

5.4

Characteristic DC Diagrams

20
75A

18

65A

16

55A

14

45A

10

35A

25A

[mA]

12

6
15A
4
5A

2
0

0.5

1.5
V

CE

2.5

3.5

[V]

Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE ), IB = Parameter

FE

10

10
2
10

10

10
[mA]

10

10

Figure 5-3 DC Current Gain hFE = f ( IC ), VCE = 2.5 V

Data Sheet

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BFP842ESD

Electrical Characteristics

10

10

10

IC [mA]

10

10

10

10

10

0.5

0.6
V

0.7
[V]

0.8

0.9

BE

Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE ), VCE = 2.5 V

10

10

10

IB [mA]

10

10

10

10

10

0.5

0.6
V

0.7
[V]

0.8

0.9

BE

Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE ), VCE = 2.5 V

Data Sheet

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BFP842ESD

Electrical Characteristics

10

10

IB [A]

10

10

10

10

0.5

0.6

0.7
V

EB

0.8

[V]

Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB ), VCE = 2.5 V

Data Sheet

17

Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

5.5

Characteristic AC Diagrams

60
55
3.00V

50
45
40

30

f [GHz]

2.50V
35

25
20

2.00V

15
10

1.50V
1.00V
0.50V

5
0

10

15

20
IC [mA]

25

30

35

40

Figure 5-7 Transition Frequency fT = f ( IC ), f = 1 GHz, VCE = Parameter

30
28
26
24
22

OIP3 [dBm]

20
18
16

2V, 2400MHz
2V, 3500MHz
2.5V, 2400MHz
2.5V, 3500MHz

14
12
10
8
6
4
2
0

10

15
I [mA]

20

25

30

Figure 5-8 3rd Order Intercept Point at output OIP3 = f ( IC), ZS = ZL = 50 , VCE, f = Parameter

Data Sheet

18

Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

10

11

30

12

14 15 16 7 8
1 1 19
20
212
2
23
24

13

14 15 16 17 1819
20
212
2

6
7
8
9

2 13
10 11 1

20

26

25

22

2 13
11 1

10

15

25

23
24

8
14 15 16 17 1 19
20
21

I [mA]

25

16
17
18
19
20

23

26

24

4 5
10 1 1

21

25

22

1.5

24

23

2
VCE [V]

2.5

Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f ( IC, VCE), ZS = ZL = 50 , f = 3.5 GHz

8
7
6
5

30

4 3 2

2
3

4
3
2

25

10

I [mA]

7
8

20

6
7

1
2
3

15

10
3

2
1
0
1

2
1
0
1

1.5

6
5

2
VCE [V]

2
1
0

2.5

Figure 5-10 Compression Point at output OP1dB [dBm] = f ( IC, VCE), ZS = ZL = 50 , f = 3.5 GHz

Data Sheet

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BFP842ESD

Electrical Characteristics

0.085

0.08

0.07

CB

[pF]

0.075

0.065

0.06

0.055

0.5

1
V

CB

1.5
[V]

2.5

Figure 5-11 Collector Base Capacitance CCB = f (VCB ), f = 1 MHz

36
33
30
Gma
27

G [dB]

24
21
Gms
18
15

|S21|2

12
9
6
3

5
6
f [GHz]

10

Figure 5-12 Gain Gma,Gms, |S21|2 = f ( f ), VCE = 2.5 V, IC = 15 mA

Data Sheet

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BFP842ESD

Electrical Characteristics

36
0.45GHz

33
30

0.90GHz

27
1.50GHz

Gmax [dB]

24

1.90GHz

21

2.40GHz

18

3.50GHz

15
12

5.50GHz

9
6
3

10

20

30

40

50

IC [mA]
Figure 5-13 Maximum Power Gain Gmax = f ( IC ), VCE = 2.5 V, f = Parameter in GHz

36
33

0.45GHz

30

0.90GHz

27
1.50GHz
1.90GHz
2.40GHz

max

[dB]

24
21
18

3.50GHz

15
5.50GHz

12
9
6
3
0.5

1.5

2
V

CE

2.5

3.5

[V]

Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz

Data Sheet

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BFP842ESD

Electrical Characteristics

1
1.5
0.5

0.4
3
0.3
4
0.2

0.03 to 10 GHz
0.1

10
10.0
10.0

0.1

9.0

0.2 0.3 0.4 0.5

1 7.0 1.5

5.0 7.0
9.0
4.0

0.1

4 5

5.0
4.0
3.0
2.0

0.03

10
1.0

3.0

0.2

5
4

2.0
1.0

0.3

3
0.4
0.5

2
1.5

5 mA
15 mA

Figure 5-15 Input Reflection Coefficient S11 = f ( f ), VCE = 2.5 V, IC = 5 / 15 mA

1
1.5
0.5

0.4
3
0.3
4
0.2

5
3.5

4.0

2.4
1.9

5.0

0.1
0.1

0.2 0.3 0.4 0.5

10

1.5

5.5
6.0

2.4

3.5

1.50.9

5.5

0.9
3
0.5

4 5

0.9
5.5

0.1

10

0.2

5
4

0.3
3
0.4
0.5

2
1.5
1

5 mA
10 mA
15 mA

Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f ), VCE = 2.5 V, IC = 5 / 10 / 15 mA

Data Sheet

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Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

[dB]

10

11

15mA
15

5mA

20

25

5
6
f [GHz]

10

Figure 5-17 Input Reflection Coefficient S11 = f ( f ), VCE = 2.5 V, IC = 5 / 15 mA

1
1.5
0.5

0.4
3
0.3

10.0

4
0.2

5
9.0

0.03 to 10 GHz

0.1

10
0.1

8.0

0.2 0.3 0.4 0.5

1.5

4 5

0.03
0.03

7.0

0.1

10
1.0

6.0

0.2

5.0
4.0

0.3

1.0
3.0

2.0

0.4
0.5

2
1.5
1

5 mA
15 mA

Figure 5-18 Output Reflection Coefficient S22 = f ( f ), VCE = 2.5 V, IC = 5 / 15 mA

Data Sheet

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BFP842ESD

Electrical Characteristics

1.4
1.2
15mA
10mA
5mA

0.8

NF

min

[dB]

0.6
0.4
0.2
0

f [GHz]

Figure 5-19 Noise Figure NFmin = f ( f ), VCE = 2.5 V, IC = 5 / 10 / 15 mA, ZS = Zopt

1.4
1.2
5.5GHz
3.5GHz
2.4GHz
0.9GHz

0.8

NF

min

[dB]

0.6
0.4
0.2
0

10

12 14
I [mA]

16

18

20

22

24

Figure 5-20 Noise Figure NFmin = f ( IC ), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz

Data Sheet

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Revision 1.0, 2012-08-03

BFP842ESD

Electrical Characteristics

2
1.8
1.6

NF

50

[dB]

1.4
1.2

5.5GHz

3.5GHz
2.4GHz
0.9GHz

0.8
0.6
0.4
0.2
0

10

12 14
I [mA]

16

18

20

22

24

Figure 5-21 Noise Figure NF50 = f (IC ), VCE = 2.5 V, ZS = 50 , f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 C

Data Sheet

25

Revision 1.0, 2012-08-03

BFP842ESD

Simulation Data

Simulation Data

For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP842ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP842ESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.

Data Sheet

26

Revision 1.0, 2012-08-03

BFP842ESD

Package Information SOT343

Package Information SOT343

0.9 0.1
2 0.2
0.1 MAX.

1.3

0.1
A

0.1 MIN.

0.15

1.25 0.1

2.1 0.1

0.3 +0.1
-0.05

+0.1

0.15 -0.05
0.6 +0.1
-0.05

4x
0.1 M

0.2 M A
SOT343-PO V08

Figure 7-1 Package Outline

1.6

0.8

0.6

1.15
0.9
SOT343-FP V08

Figure 7-2 Package Foot Print

XY s

96

Manufacturer

2009, June
Date Code(YM)

Marking

Pin 1

Figure 7-3 Marking Example (Marking BFP842ESD: T9s)

0.2

2.3

Pin 1

2.15

1.1
SOT323-TP V02

Figure 7-4 Tape dimensions


Data Sheet

27

Revision 1.0, 2012-08-03

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Published by Infineon Technologies AG