AF9945N

N-Channel Enhancement Mode Power MOSFET

Features

General Description

- Low On-resistance
- Single Drive Requirement
- Surface Mount Package

The Advanced Power MOSFET provides the designer

with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

Product Summary
BVDSS (V)
60

rDS(on) (m)
90

ID (A)
3.5

Pin Assignments

Pin Descriptions

S1

D1

G1

D1

S2

D2

G2

D2

Pin Name
S1/2
G1/2
D1/2

Description
Source
Gate
Drain

SOP-8

Ordering information

Feature
F :MOSFET

A X

9945N X X X

PN

Package

Lead Free

Packing

S: SOP-8

Blank : Normal
L : Lead Free Package

Blank : Tube or Bulk

A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Oct 12, 2004

1/5

AF9945N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
VDS
VGS

Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25C
TA=70C

ID

Continuous Drain Current (Note 1)

IDM

Pulsed Drain Current (Note 2)

Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range

PD
TSTG
TJ

Rating
60
25
3.5
2.8
20
2
0.016
-55 to 150
-55 to 150

TA=25C

Units
V
V
A
A
W
W/C
C
C

Thermal Resistance Ratings

Symbol
Rthj-a

Parameter
Thermal Resistance Junction-Ambient (Note 1)
2

Value
62.5

Max.

Units
o
C/W

Note 1: Surface mounted on 1 in copper pad of FR4 board, t10sec; 135 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.

Electrical Characteristics at TJ=25C (unless otherwise specified)

Symbol
BVDSS
BVDSS /TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
RG

Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
(Note 3)

Gate Threshold Voltage

Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (Miller) Charge
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Test Conditions
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
VGS=10V, ID=3A
VGS=4.5V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=60V, VGS=0V,
TJ=25C
VDS=48V, VGS=0V,
TJ=70C
VGS=25V
ID=3A,
VDS=48V,
VGS=4.5V
VDS=30V,
ID=1A,
RG=3.3, VGS=10V
RD=30
VGS=0V,
VDS=25V,
f=1.0MHz
f=1.0MHz

Min.
60

Typ.
-

Max.
-

Units
V

0.04

V/oC

1
-

90
120
3
-

m
m
V
S

10

uA

25

uA

6
2
3
6
5
16
3
510
55
35
1.3

100
10
810
-

nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF

Test Conditions
IS=1.7A, VGS=0V
IS=4A, VGS=0V,
dl/dt=100A/s

Min.
-

Typ.
27
32

Max.
1.2
-

Units
V
ns
nC

Source-Drain Diode
Symbol
VSD
trr
Qrr

Parameter
Forward On Voltage (Note 3)
Reverse Recovery Time (Note 3)
Reverse Recovery Charge

Note3: Pulse width 300us, duty cycle 2%.

Anachip Corp.
www.anachip.com.tw

Rev. 1.0
2/5

Oct 12, 2004

AF9945N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction

Temperature

Fig 5. Forward Characteristic of Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction

Temperature

Anachip Corp.
www.anachip.com.tw

Rev. 1.0
3/5

Oct 12, 2004

AF9945N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

Anachip Corp.
www.anachip.com.tw

Rev. 1.0
4/5

Oct 12, 2004

AF9945N
N-Channel Enhancement Mode Power MOSFET
Marking Information
SOP-8L
( Top View )
8

Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52

Logo

9945N
AA Y W X

Part Number

Week code:
"A~Z": 01~26;
"A~Z": 27~52

Year code:
"4" =2004
~
Factory code

Package Information

Package Type: SOP-8L

L
VIEW "A"
D

0.015x45

A1

7 (4X)

A2

7 (4X)

VIEW "A"

Symbol
A
A1
A2
B
C
D
E
e
H
L
y

Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25
4.80
5.05
5.30
3.70
3.90
4.10
1.27
5.79
5.99
6.20
0.38
0.71
1.27
0.10
8O
0O

Anachip Corp.
www.anachip.com.tw

Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010
0.189
0.199
0.209
0.146
0.154
0.161
0.050
0.228
0.236
0.244
0.015
0.028
0.050
0.004
0O
8O

Rev. 1.0
5/5

Oct 12, 2004

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