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  • General Purpose Transistors PNP Si-Epitaxial Planartransistors PNP

    Încărcat de

    Paul Gutiérrez
    51 vizualizări2 pagini
    These transistors are general purpose silicon epitaxial planar PNP transistors in plastic TO-92 packages. They have power dissipation of 500mW and weigh approximately 0.18g. The document provides maximum ratings, characteristics, and parameters for the BC556-BC559 transistors including current gain, impedance, voltages, frequencies, and thermal resistance. It recommends complementary NPN transistors and lists available current gain groups.

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    BC557

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    BC557

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    These transistors are general purpose silicon epitaxial planar PNP transistors in plastic TO-92 packages. They have power dissipation of 500mW and weigh approximately 0.18g. The document provides maximum ratings, characteristics, and parameters for the BC556-BC559 transistors including current gain, impedance, voltages, frequencies, and thermal resistance. It recommends complementary NPN transistors and lists available current gain groups.

    Drepturi de autor:

    © All Rights Reserved
    Descărcați ca PDF, TXT sau citiți online pe Scribd
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    51 vizualizări2 pagini

    General Purpose Transistors PNP Si-Epitaxial Planartransistors PNP

    Încărcat de

    Paul Gutiérrez
    These transistors are general purpose silicon epitaxial planar PNP transistors in plastic TO-92 packages. They have power dissipation of 500mW and weigh approximately 0.18g. The document provides maximum ratings, characteristics, and parameters for the BC556-BC559 transistors including current gain, impedance, voltages, frequencies, and thermal resistance. It recommends complementary NPN transistors and lists available current gain groups.

    Drepturi de autor:

    © All Rights Reserved
    Descărcați ca PDF, TXT sau citiți online pe Scribd
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    din 2

    BC 556 ...

    BC 559
    PNP

    General Purpose Transistors


    Si-Epitaxial PlanarTransistors

    PNP

    Power dissipation Verlustleistung

    500 mW

    Plastic case
    Kunststoffgehuse

    TO-92
    (10D3)

    Weight approx. Gewicht ca.

    0.18 g

    Plastic material has UL classification 94V-0


    Gehusematerial UL94V-0 klassifiziert
    Standard Pinning
    1=C 2=B 3=E

    Standard packaging taped in ammo pack


    Standard Lieferform gegurtet in Ammo-Pack

    Maximum ratings (TA = 25/C)

    Grenzwerte (TA = 25/C)


    BC 556

    BC 557

    BC 558/559

    Collector-Emitter-voltage

    B open

    - VCE0

    65 V

    45 V

    30 V

    Collector-Base-voltage

    E open

    - VCB0

    80 V

    50 V

    30 V

    Emitter-Base-voltage

    C open

    - VEB0

    5V

    Power dissipation Verlustleistung

    Ptot

    500 mW 1)

    Collector current Kollektorstrom (DC)

    - IC

    100 mA

    Junction temp. Sperrschichttemperatur

    Tj

    150/C

    Storage temperature Lagerungstemperatur

    TS

    - 55+ 150/C

    Characteristics (Tj = 25/C)

    Kennwerte (Tj = 25/C)


    Group A

    Group B

    Group C

    110...220

    200...460

    420...800

    DC current gain Kollektor-Basis-Stromverhltnis


    - VCE = 5 V, - IC = 2 mA

    hFE

    h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz


    Small signal current gain
    Stromverstrkung

    hfe

    typ. 220

    typ. 330

    typ. 600

    Input impedance Eingangsimpedanz

    hie

    1.6...4.5 kS

    3.2...8.5 kS

    6...15 kS

    Output admittance Ausg.-Leitwert

    hoe

    18 < 30 :S

    30 < 60 :S

    60 < 110 :S

    Reverse voltage transfer ratio


    Spannungsrckwirkung

    hre

    typ.1.5 *10-4

    typ. 2 *10-4

    typ. 3 *10-4

    300 mV

    Collector saturation voltage Kollektor-Sttigungsspg.


    - IC = 100 mA, - IB = 5 mA

    -VCEsat

    ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case


    Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
    8
    01.11.2003

    General Purpose Transistors

    BC 556 ... BC 559

    Characteristics (Tj = 25/C)

    Kennwerte (Tj = 25/C)


    Min.

    Typ.

    Max.

    1V

    - VBE

    580 mV

    660 mV

    700 mV

    Base saturation voltage Basis-Sttigungsspannung


    - IC = 100 mA, - IB = 5 mA

    - VBEsat

    Base-Emitter voltage Basis-Emitter-Spannung


    - VCE = 5 V, - IC = 2 mA
    Collector-Emitter cutoff current Kollektorreststrom
    - VCE = 60 V

    BC 556

    - ICE0

    0.1 :A

    - VCE = 40 V

    BC 557

    - ICE0

    0.1 :A

    - VCE = 25 V

    BC 558

    - ICE0

    0.1 :A

    - VCE = 25 V

    BC 559

    - ICE0

    0.1 :A

    150 MHz

    CCB0

    6 pF

    CEB0

    9 pF

    2 dB

    10 dB

    1 dB

    4 dB

    Gain-Bandwidth Product Transitfrequenz


    - VCE = 5 V, - IC = 10 mA, f = 100 MHz

    fT

    Collector-Base Capacitance Kollektor-Basis-Kapazitt


    - VCB = 10 V, IE = ie = 0, f = 1 MHz
    Emitter-Base Capacitance Emitter-Basis-Kapazitt
    - VEB = 0.5 V, f = 1 MHz
    Noise figure Rauschzahl
    - VCE = 5 V, - IC = 200 :A

    BC 556...

    RG = 2 kS f = 1 kHz,

    BC 558

    )f = 200 Hz

    BC 559

    Thermal resistance junction to ambient air


    Wrmewiderstand Sperrschicht umgebende Luft
    Recommended complementary PNP transistors
    Empfohlene komplementre PNP-Transistoren

    Available current gain groups per type


    Lieferbare Stromverstrkungsgruppen pro Typ

    200 K/W 1)

    RthA

    BC 546 ... BC 549

    BC 556A
    BC 557A
    BC 558A

    BC 556B
    BC 557B
    BC 558B
    BC 559B

    BC 557C
    BC 558C
    BC 559C

    ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case


    Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
    01.11.2003

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