MUR1605 thru MUR1660

Pb

MUR1605 thru MUR1660

Pb Free Plating Product

16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers

Unit : inch (mm)

TO-220AB

.054(1.39)
.045(1.15)

.177(4.5)MAX

 Automotive Environment|DC Motor Control

 Plating Power Supply|UPS
 Amplifier and Sound Device System etc..
.038(0.96)
.019(0.50)

Mechanical Data
 Case: Molded plastic TO-220AB Heatsink
 Epoxy: UL 94V-0 rate flame retardant
 Terminals: Solderable per MIL-STD-202
method 208
 Polarity:As marked on diode body
 Mounting position: Any
 Weight: 2.03 grams

.1(2.54)

.50(12.7)MIN

Application

.624(15.87)

.139(3.55)
MIN

.548(13.93)

.196(5.00)
.163(4.16)

.269(6.85)

.419(10.66)
.387(9.85)

.226(5.75)

Features
 Fast switching for high efficiency
 Low forward voltage drop
 High current capability
 Low reverse leakage current
 High surge current capability

.025(0.65)MAX

.1(2.54)

Case

Case

Positive
Common Cathode
Suffix "CT"

Negative
Common Anode
Suffix "CA"

Case

Doubler
Series Connection
Suffix "GD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT"
Common Anode Suffix "CA"
Anode and Cathode Coexistence Suffix "GD"

MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT

SYMBOL

MUR1605CA MUR1610CA MUR1620CA MUR1630CA MUR1640CA MUR1660CA UNIT

MUR1605GD MUR1610GD MUR1620GD MUR1630GD MUR1640GD MUR1660GD

Maximum Recurrent Peak Reverse Voltage

VRRM

50

100

200

300

400

600

Maximum RMS Voltage

VRMS

35

70

140

210

280

420

Maximum DC Blocking Voltage

VDC

50

100

200

300

400

600

Maximum Average Forward Rectified

16.0

IF(AV)

Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

IFSM

175

VF

0.98

150

(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A

1.3

Maximum DC Reverse Current @TJ=25 C

o

At Rated DC Blocking Voltage @TJ=125 C

IR

uA

250

uA
nS

Trr

35

Typical junction Capacitance (Note 2)

CJ

90

Operating Junction and Storage

Temperature Range

10.0

Maximum Reverse Recovery Time (Note 1)

Typical Thermal Resistance (Note 3)

1.7

R JC

2.2

TJ, TSTG

-55 to + 150

pF
o

CW
o

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.

Page 1/2
2006 Thinki Semiconductor Co.,Ltd.

http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

MUR1605 thru MUR1660

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

200

PEAK FORWARD SURGE CURRENT,

AMPERES

AVERAGE FORWARD RECTIFIED

CURRENT, AMPERES

16

13

10

4
60 Hz Resistive or
Inductive load

Pulse Width 8.3ms

Single Half-Sire-Wave
(JEDEC Method)

175
150
125
100
75
50
25

0
0

50

100

150

100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS
10

1000

MUR1605-MUR1620

INSTANTANEOUS REVERSE CURRENT,

MICROAMPERES

IINSTANTANEOUS FORWARD CURRENT,

AMPERES

10

MUR1630-MUR1640

1.0

MUR1660

0.1

TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE

0.01
0.2

0.4

0.6

0.8

1.0

1.2

1.4

TJ=125 C

100

10
o

TJ=25 C
1

0.1
0

1.6

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

20

40

60

80

100

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

1000

TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p

100

10
0.1

1.0

4.0

10

100

REVERSE VOLTAGE, VOLTS

Page 2/2
2006 Thinki Semiconductor Co.,Ltd.

http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/