Nanoscale+Deposition 2014

Part IV: Nanoscale Deposition
1. Fundamentals of Thin Film Deposition

- Adsorption of Materials
- Reaction Control and Diffusion Control
2. Chemical Vapor Deposition (CVD)

- Introduction to CVD
- CVD Reactions and PECVD
- Various CVD Films
3. Physical Vapor Deposition (PVD)

- Introduction to PVD
- Various PVD Techniques
- Deposition of Interconnect Materials
SNT5039 Nano Processing (Deposition Technology)
FUNDAMENTALS OF THIN FILM DEPOSITION
Surface adsorption
FUNDAMENTALS OF THIN FILM DEPOSITION
INTRODUCTION (DEPOSITION KINETICS)
Diffusion
The flux of reactant species

from the gas phase to wafer
surfaces through the boundary
layer, F1 is
F1= hG (CG-CS)
where, hG is the mass transfer
coefficient (in cm/sec), CG-CS
term is the difference in
concentration of the reactant
species (in molecules/cm3)
Reaction
The flux of reactant consumed by

the reaction at the surface, F2
F2=kSCS
where
chemical surface
the
kS
reaction
is
the
rate
(in
cm/sec) and CS is the concentration of

the reacting species at the surface (in
cm-3)
All of the processes involving surface

chemical reactions and surface diffusion
are lumped into this one parameter.
Assuming steady-state deposition,

these two processes that act in series
must be equal to each other, thus
F = F1 = F2
Equating the F1 and F2,
k S hG CG
F
v
N kS hG N
The growth rate of the film is now

given by
k S 1
C S CG (1 )
hG
where, v is the deposition rate or velocity

in cm/sec, and N is the number of atoms
incorporated per unit volume in the film,
or its density, in cm-3 (5x1022 cm-3 for Si in
this case)
Now, we define Y to be the mole fraction of the incorporating species

in the gas phase
C
Y
C
G
T
where CT is the concentration of all molecules in the gas phase.
Example : Si deposition by the reaction of SiCl4 and hydrogen

SiCl4(g)+2H2(g) Si(s) + 4HCl(g)
Here, CG is the number of molecules of SiCl4 per cm3 in the gas phase and CT would
correspond to the total number of SiCl4 and H2 molecules (plus any other species) per cm3 in
the gas phase.
Y is also equal to the partial pressure of the incorporating species, PG,

divided by the total pressure in the system
C G PG
PG
Y
CT
PT
PG PG ' .......
After introducing Y, the deposition velocity is now
k S hG CT
F
v
Y
N k S hG N
Example
Calculate the deposition rate for a CVD system in which
hG=1.0 cm/sec, kS=10cm/sec
Partial pressure of incorporating species=PG=1torr
Total pressure = PT = 1atm = 760 torr
Total concentration in gas phase = CT = 1x1019 cm-3
Density of deposition film = N = 5x1022 cm-3
Answer
k h
C
F
Using equation
v S G T Y
N
k S hG
we can obtain v=2.4x10-7cm/sec = 0.14 um/min

Two limiting cases

If kS << hG
The deposition rate
kS hG CT
C
C
1
Y
T Y T kSY
k S hG N
1/ hG 1/ k S N
N
This is the surface reaction controlled case.

Physical reason: the mass transfer through the gas boundary layer
is relatively fast, while the surface reaction is sluggish.
The CS approaches CG.
If hG << kS
The deposition rate
kS hG CT
C
C
1
Y
T Y T hGY
kS hG N
1/ hG 1/ kS N
N
This is the mass transfer, or gas phase diffusion, controlled case.

The surface reaction is faster compared to mass transfer.
CS approaches to zero.
For mass transfer controlled regime

Deposition rate is relatively constant
with temperature
However, as it is controlled by the
mass transfer of species through the
gas phase boundary layer, the flow of
gas over the wafers and transport of
the reactants to the wafer surface are
very important and can place major
restrictions
For surface reaction controlled regime

Process is very sensitive to the
temperature
However, the mass transfer through
the boundary layer is not as important,
leading to fewer restrictions on the
gas flow and wafer placement.
10
When operating CVD reactors in the

mass transfer limited regime, one has
to ensure that equal fluxes of reactant
gases must reach every location for
uniformity issue.
Wafers are placed side by side (or

horizontally
stacked),
hence
low
throughput.
This can be improved by going to

lower deposition temperature.
However, the deposition rate will be

reduced also.
Lower
deposition
pressure
can
increase the deposition rate.

11
Advantages over LPCVD are good uniformity, good step coverage and
less particle contamination
Operated in the pressure range of 250mTorr to 2Torr and higher

temperature of above 550oC.
Films deposited by LPCVD are mainly poly-Si, oxides, nitrides, W and

WSi.
Usually films are deposited in the reaction-rate limited regime and

temperature control is important as shown in Arrhenius equation of
surface reaction rate,
Ea / kT
R Ae
because diffusion of reactants is fast enough in the low pressure regime
Disadvantages of LPCVD could be low deposition rate and the use of

high temperature.
12
Deposition Technology

- Various CVD Films

13
INTRODUCTION TO CVD
- CVD is a process to form a non-volatile solid film on the substrate by
reaction of vapor phase chemicals.
- Energy for reaction is supplied by thermal methods, photons or electrons.
In
microelectronics
manufacturing,
polycrystalline Si (called Poly-Si), dielectric

materials such as silicon dioxide (SiO2) and
silicon nitride (Si3N4), interconnect / contact
plug
such
as
tungsten
(W),
silicide
materials such as tungsten silicide (WSi6),

and diffusion barriers (Ti/TiN) are deposited
by CVD techniques.
14
INTRODUCTION TO CVD
Advantages of CVD processes over other

competing techniques
Wide variety of chemical compositions
High deposition rates with good step
coverage
Low manufacturing cost
Only one stage (LPCVD) or no pumping
(APCVD) processes are possible
15
INTRODUCTION TO CVD
16
INTRODUCTION TO CVD
Desired characteristics of CVD films are

Good thickness uniformity
High purity and density
Controlled composition and stoichiometry
High degree of structural perfection
Good adhesion
Good step coverage
aspect ratio (AR) of a feature (AR = height of feature/width of feature = h/w)

A parameter that can reflect filling and bottom coverage
The feature could be a metal line or a spacer
such as a gap between metal lines.
A deep and narrow contact hole would have a large aspect ratio
and would be harder to fill.
17
INTRODUCTION TO CVD
1) Transport of reactants by forced
convection to deposition region.
2) Mass transfer of reactants by diffusion
from the main gas stream through the
boundary layer to the wafer surface.
3) Adsorption of reactants on the wafer
surface.
4) Surface processes, including chemical decomposition or reaction, surface
migration to attachment sites, site incorporation and other surface reactions.
5) Desorption of byproducts from the surface
6) Transport of byproducts by diffusion through the boundary layer and back to
the main gas stream
7) Transport of byproducts by forced convection away from deposition region.
18
CVD REACTIONS
CVD Chemical Reactions
(1) Heterogeneous reactions, taking place on the heated wafer surface, are more
desirable, because they can produce high quality films
(2) Homogeneous reactions, taking place in the gas phase, are undesirable,
because they form gas phase clusters that can result in poor adhesion to the
substrate and low quality films.
(3) The Table lists typical reactions used in the CVD.
Thermal decomposition)
SiH4(g) Si(c)+2H2(g)
SiH2Cl2(g) Si(c)+2HCl(g)
CH4(g) C+2H2(g)
Oxidation
SiH4(g) +2O2(g)SiO2(c)+2H2O(g)
Nitridation
SiH4(g) +4NH3(g)Si3N4(c)+8H2(g)
Reduction
WF6(g)+3H2(g) W(c) +6HF(g)
Displacement
Ga(CH3)3(g)+AsH3(g) GaAs(c) +3CH4(g)
Displacement
ZnCl2(g)+H2S(g) ZnS(c) +2HCl(g)
Displacement
2TiCl4(g)+2NH3(g) +H2(g)TiN(c) +8HCl(g)
19
CVD REACTIONS (REACTION FEASIBILITY BY THERMODYNAMICS)
-Thermodynamics can address many important issues for

CVD, eg, feasibility of a given reaction.
-Thermodynamics does not tell the speed of reactions
and the film growth rates which are determined by both
vapor transport kinetics and vapor-solid reaction.
- Thermodynamics tells if chemical equilibrium has been
attained.
- Thus, CVD is viewed as an empirical technology with
thermodynamic guidelines.
20
CVD REACTIONS (GIBBS FREE ENERGY AND EQULIBRIUM)

Gibbs
free
equilibrium
energies
constants
(DG)
(K)
are
and
the
related,
DG= - RT ln K.
(Example) Consider the formation of PolySi at 600C from the following two reactions,
and
suggest
which
reaction
is
more
thermodynamically favorable.
(1) SiCl2H2(g) = Si(c) + 2HCl(g)
(2) SiH4(g) = Si(c) + 2H2(g)
Where
2
(aSi ) PHCl
( aSi ) PH2 2
K1
, K2
, where aSi 1
PSiCl 2 H 2
PSiH 4
21
CVD REACTIONS (REACTION FEASIBILITY BY THERMODYNAMICS)

(eg SELECTIVE DEPOSITION of W)
Using the graph, testify possibility of
selective deposition of W onto Si, but
not onto the surrounding SiO2 at the
temperature of 700K, by determining
the change of Gibbs free energies (DG)
and the equilibrium constants (K) for the
following CVD reactions, where DG= RT ln K.
(1) WF 3 Si (c) W (c) 3 SiF ( g )
6
4
2
(2)
WF6 ( g )
3
3
3
SiO 2 (c) W (c) SiF4 ( g ) O2 ( g )
2
2
2
22
GROWTH RATE UNIFORMITY IN LPCVD

(1) From the result (b), explain why the
surface reaction controlled process is
preferred to attain better uniformity in
LPCVD.
(1) Further calculation showed that a
deposition uniformity of 3% is achieved
when f < 0.5. Determine a minimum
spacing (D) between wafers when
k=0.5cm/s and D=100cm/s, for the
following wafer diameters.
(i) 6 inch (ii) 8 inch
(3) Using the equation, v
f 2r02 k / DD
k hG CT
Y
k hG N
Determine the deposition rate of poly-Si,

where hG=D/d (d=0.1cm), CT=1016cm-3,
Y=0.5.
23
VARIOUS CVD FILMS (PECVD)
Plasma-Enhanced Deposition (PECVD)
PECVD uses a rf power to generate a glow discharge to transfer energy to

the reactant gases
Deposition can be achieved at a lower temperature compared to APCVD or

LPCVD
Desired properties, such as good adhesion, low pinhole density, good step
coverage, adequate electrical properties, have made PECVD films useful in
ULSI circuits.
PECVD silicon nitride is commonly used as the final passivation layer
PECVD silicon oxide can be used as insulators between the metal layers
PECVD amorphous silicon has been widely used in TFT LCD area
24
VARIOUS CVD FILMS (PECVD EQUIPMENT)
Use of RF-induced plasma to supply energy into reactant gases

Plasmas are highly ionized gases
With additional energy from the plasma to the reactant gases, deposition can
occur at lower temperatures
25
VARIOUS CVD FILMS (PECVD)
Plasma generation and deposition

Plasma is generated by the application of an RF field to a low
pressure gas.
Electrons in the reactor gain sufficient energy from the electric
field and collide with gas molecules.
Dissociation and Ionization of reactant gases occur.
Energetic species including ions and radicals are adsorbed on
the surface. Radicals have high sticking coefficient because
dangling bonds are available and migrate easily along the surface.
This is why PECVD can provide good step coverage.
Species adsorbed on the surface are subsequently subjected to
bombardment by charged species such as ions and electrons,
rearranged, reacted with other adsorbed species.
Thin film grows.
26
PLASMA-ENHANCED DEPOSITION (PECVD)

Deposition Methods and Variables
PECVD requires
control and optimization of rf power density, frequency and
duty cycle
Gas composition, flow rate, temperature, pressure etc.
PECVD process is a surface-reaction limited process
PECVD silicon oxide
SiH4 + O2 SiO2 + 2H2
SiH4 + 4N2O SiO2 + 4N2 + 2H2O
PECVD silicon nitride
SiH4 + NH3 SiN:H + 3H2O
SiH4 + N2 2SiN:H + 3H2
PECVD amorphous silicon
SiH4 Si + 2H2
27
Plasma-Enhanced Deposition (PECVD)
28
TEMPERATURE DEPENDENCE OF GROWTH IN LPCVD
29
VARIOUS CVD FILMS (POLY-SILICON FILM DEPOSITION)

Deposition Variables
The temperature dependence of

deposition rate follows the Arrhenius
equation: R=Aexp(-Ea/kT)
For example, if polysilicon deposits at

10nm/min at 600oC with an activation
energy of 1.7eV, the rate at 550oC is
found by:
Ea T1 T2
ln(R1 / R2 ) (
)
k T1T2
solving for R2 gives 2.5nm/min.
Deposition
rate
increases
increasing pressure.
with
30
VARIOUS CVD FILMS (POLY-SILICON FILM DEPOSITION)
Deposition Variables
Nonlinear dependence of conc. of

silane on the deposition rate due
to a sequence of surface reaction
The reactions
SiH4(g) SiH4(ad)
SiH4(ad) SiH2(ad) + H2(ad)
SiH2(ad) Si + H2(ad)
H2(ad) H2(g)
31
Deposition Technology

- Various CVD Films

32
INTRODUCTION TO PVD
PVD is a process to form a non-volatile solid film on the substrate

by physical methods.
PVD is mainly used for metallization in Si IC applications.
Mainly, the following PVD methods are used:

Evaporation (Thermal and e-beam)
Very seldom used in Si IC, we will not discuss this technique
Sputtering (Glow discharge)
Pulsed laser deposition (laser ablation)
Very seldom used in Si IC, we will not discuss this technique
33
INTRODUCTION TO PVD
PVD is a process to form a non-volatile solid film on the

substrate by physical methods.
PVD is mainly used for metallization in Si IC applications.
Mainly, three PVD methods exist
Evaporation (Thermal and e-beam)
Sputtering (Glow discharge)
Pulsed laser deposition (laser ablation)
Very seldom used in Si IC, we will not discuss this
technique
34
EVAPORATION (BASIC OPERATION)

Wafers are loaded into a high
vacuum chamber that is commonly
pumped already
The charge or material to be

deposited is loaded into a heated
container called the crucible. It can
be heated by means of an
embedded resistance heater and an
external power supply.
As the material in the crucible

becomes hot, the charge gives off a
vapor.
Since the pressure in the chamber

is very low, the atoms of vapor
travel across the chamber in a
straight line until they strike a
surface where they accumulate as a
film.
35
EVAPORATION (PHASE DIAGRAMS)
Sublimation and Evaporation
Vapor pressure is a very strong

function of temperature
Normally, a partial of about 1-10 mT
or more is required to achieve
reasonable deposition rates (on the
order of 0.1-1 um per minute), and
one can see that about 1100oC is
needed for the evaporation of Al.
This means that the Al is evaporated
from the liquid phase.
When the material is evaporated
from the liquid phase, the vapor
pressure can be given as
Sublimation: vapor is from solid

Evaporation: vapor is from liquid
Normally, evaporation provides
higher vapor pressure and hence
higher deposition rate
36
EVAPORATION (DEPOSITION RATES)
The mass loss rate of the crucible can be calculated as
Two approximations:
If the charge is completely molten it is common to assume that
natural convection and thermal conduction will keep the
temperature of the charge nearly constant across the crucible
It is also assumed that the opening of the crucible has a
constant area, A
37
To find the deposition rate on the

surface of a wafer, the fraction of
the material leaving the crucible
that accumulates on the surface of
the wafer must be determined.
Material ejected from the crucible

travels in a straight path to the
wafer surface due to low pressure.
Assuming that all of the material

that arrives at the wafer sticks and
remains there, the arrival rate then
is governed by simple geometry.
Thus, the constant of proportionality

is just the fraction of the total solid
angle subtended by the wafer as
seen from the substrate.
38

The proportionality constant is given by
Deposition rate depends on the location

and orientation of the wafer in the chamber
Wafers directly above the crucible will be
coated more heavily than wafers off to the
side
Film uniformity is also a concern
One method to obtain good uniformity is to
place the crucible and wafers on the surface
of a sphere. Then
R
cos cosf
2r
1st
term: depends on material

2nd term: depends on temperature
3rd term: depends on geometry of
the chamber
The deposition rate is the mass arrival per

unit area divided by the mass density of the
film
39
EVAPORATION (STEP COVERAGE)
Two methods to improve step

coverage:
(1)To rotate the wafer substrates
(2)To heat the wafer substrate
40
INTRODUCTION TO PVD (SPUTTERING EQUIPMENT)
41
SPUTTERING (RF SPUTTER DEPOSITION)
DC sputter deposition is not suitable for insulator deposition

A problem with applying the necessary DC voltage to the
insulating target to initiate a plasma
Other major difficulties arise, such as particle issue
The solution is to use RF, instead of DC. 13.56MHz RF power

source is commonly used.
RF voltages can be coupled capacitively through the insulating

target to the plasma, so that conducting electrodes are not
necessary
The RF frequency is chosen to be high enough so that a

continuous plasma discharge is maintained.
42
SPUTTERING (BIAS SPUTTERING)
Sometimes sputtering of wafer is desirable for

Precleaning the wafer before actual deposition
Bias sputtering, where deposition and sputtering are done simultaneously
A negative bias relative to the plasma is applied to the wafer electrode, which
is now electrically isolated from the chamber walls.
Positive Ar ions from the plasma will now be accelerated to the wafers on the
substrate and sputter off the atoms.
Usually an RF bias is used since the wafers often have insulating films on
them.
In sputter etching or cleaning, no deposition is allowed to occur on the wafer

by using a shutter to block sputtered material from the target.
During this step, a controlled thickness of surface material is sputtered off
the wafer, removing any contamination or native oxide
A film can then be sputtered immediately afterward without breaking the
vacuum
43
SPUTTERING (FUNDAMENTAL)
Positive ions in the plasma are accelerated to the negatively biased target
(hundreds of volts to thousands of volts)
Energetic ions strike the target and dislodge or sputter the target atoms
These atoms then travel freely through the plasma as vapor and strike the
surface of the substrates, where they condense to form the deposited film
Note: since the targets acts as an electrode in the DC mode of sputter

deposition, the target must be conductive.
Substrate
Positive(+)
Positive ion
(Ar+)
Target
Negative(-)
44
SPUTTERING (DEPOSITION RATE)
Sputter yield (S) is the ratio of the number of

target atoms ejected from the target to the
number of ions incident on the target.
Sputter yield depends on ion mass, ion

energy, target mass and target crystallinity.
Sputter yield is proportional to energy of

incident ion (E) but inversely proportional to
surface binding energy (U0)
4mt mion
E
( mt mion ) 2 U 0
For ion energy larger than threshold energy,

sputter yield tends to increase as the square
of the energy up to about 100eV, then linearly
with energy. Above ~1000eV, yield increases
only slightly until the onset of implantation.
45
SPUTTERING (STEP COVERAGE)
Sputter has worse step coverage

than CVD
Heating substrate can improve dramatically the step coverage due

to surface diffusion
A second technique for improving the step coverage is to apply an

RF bias to wafers. (will discuss later)
46
SPUTTERING (REACTIVE SPUTTER DEPOSITION)
Compound films can be processed by reactive sputter deposition
Example: TiN, TiO2

A reactive gas (N2, O2) is introduced into the sputtering chamber in
addition to the Ar plasma.
The compound is formed by the elements of that gas combining with the
sputtered material.
The reaction usually happens either on the wafer surface or on the target
itself, and not in the plasma.
47
SPUTTERING (REACTIVE SPUTTER DEPOSITION)
Various compounds can be deposited by reactive sputtering

using a reactive gas with Ar
48
SPUTTERING (BIAS SPUTTERING)
In bias-sputter deposition, sputter etching of the wafer and deposition

on the wafer (by sputtering the target) are allowed to occur
concurrently.
Conditions are chosen so that more deposition occurs than etching.
By allowing some sputtering of the wafer surface to occur during the

deposition, both the topography and the properties of the deposited
films can be altered.
More planarized film

Better filling to the holes
49
SPUTTERING (MAGNETRON SPUTTER DEPOSITION)
In both conventional DC and RF sputtering, efficiency of ionization from

energetic collision between electrons and gas atoms is rather low
In magnetron sputtering, magnets are used to increase the percentage of

electrons that take part in ionization events, and the ionization efficiency is
increased significantly (about 10-100 times higher)
A magnetic field is applied at right angle to the electric field, usually by placing
large rectangular magnets behind the target.
50
SPUTTERING (COLLIMATED SPUTTER DEPOSITION)
Small range of arrival angles during deposition can cause non-uniform, or poor
step coverage over a step in topography.
However, sometimes a small range of arrival angles is desirable. For example,
if material is required to be deposited into of a deep contact or via, a large
arrival angle distribution can cause problems.
Example
A relatively large arrival angle distribution when little surface diffusion occurs can
result in little deposition at the bottom of a hole due to shadowing effects. In
addition, overhang formation occurring at the top corners of a deep hole
enhances the shadowing effect. Hence the poor coverage at the hole bottom.
One way to improve this is by having a narrow range of arrival angles, with most
of the depositing atoms arriving at the wafer perpendicular to the surface.
51
REQUIREMENTS OF INTERCONNECT MATERIALS

Gate
material
(1) Low resistivity

(2) Self-aligned formation on n- and ppolysilicon (Logic devices)
(3) Easy formation of polycides
(4) Minimum dopant depletion and
boron penetration for poly-Si (assisted
by good gate dielectrics)
Contact
metal
(1) Formation on n- and p-silicon and

polysilicon or WSi
(2) Low/reproducible contact resistance
(3) Minimum consumption of silicon
(4) No interaction with oxide/nitride
sidewall
Metal
lines
(1) Low resistivity and stress

(2) Compatible with dielectric
Via fill
metal
(1) Low contact resistance with

underlying and overlayer metals
(2) Planarizable
(3) Low resistivity
52
MATERIALS IN INTERCONNECTS (ALUMINUM)

- Deposited by sputtering
- Used widely as the contact and second level interconnection material due
to low resistivity and its ability to reduce native SiO2. This leads lower
contact resistance and stronger bonding.
- Because of its low melting temperature of 660C, the post processing is
normally limited to below 450C.
- Annealing of Al on Si causes dissolution of silicon by diffusion into the
metal and leads to pit formation. To prevent junction shorts caused by
the preferential dissolution of Si into Al, Si is added to Al during the
deposition of the metal film. The amount of the Si required is determined
by the maximum process temperature and the solid solubility of Si in Al.
- Cu is added to Al or Al-Si alloys to increase the electromigration
resistance. Mean- time-to-failure (MTF) tends to decrease with the length
of the Al runner. However, for a given current through the runner, the
electromigration-induced mass transport is higher in the small runners.
This originates from the fact that grain-boundary diffusion becomes
insignificant in the grain structure of small feature lines.
53
MATERIALS IN INTERCONNECTS (COPPER)
- Resistivity of Cu is about 37% lower than Al.

- Until recently, Cu has not found wide application in Si IC processing
due to high diffusivity, deep levels in silicon, and low heat of
formation of copper oxides.
- Deposited by electrochemical deposition and sputtering.
- At room temperature, Cu etching is very difficult because copper
oxides are easily formed but halogenated etching products are hardly
formed.
- Chemical mechanical planarization (CMP) of Cu is predominantly
used, instead of the etching process.
54
MATERIALS IN INTERCONNECTS (DIFFUSION BARRIERS)
- Passive barriers: Chemically inert to both Si and Al, and good diffusion
barrier, e.g. TiN between Si and Al
- Usually, thin Ti is deposited on Si of the contact regions before depositing
TiN. Subsequently, Ti is annealed to form TiSi2 to form ohmic contacts.
- Diffusion barrier between interconnects and interlayer dielectrics: between
Al, Cu and SiO2, low-k dielecric, e.g. TiN for Al, and Ta, TaN for Cu
- Sputtering: Ti, TiN, Ta, TaN,
- CVD: Ti, TiN
6TiCl4 + 8NH3 = 6TiN + 24HCl +N2 at 400-700C
2TiCl4 + 2NH3 + H2 = 2TiN + 8HCl +N2 at > 700C
2TiCl4 + N2 + 4H2 = 2TiN + 8HCl +N2 at 400-700C
55

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Part IV: Nanoscale Deposition

1. Fundamentals of Thin Film Deposition

2. Chemical Vapor Deposition (CVD)

3. Physical Vapor Deposition (PVD)

SNT5039 Nano Processing (Deposition Technology)

FUNDAMENTALS OF THIN FILM DEPOSITION

SNT5039 Nano Processing (Deposition Technology)

FUNDAMENTALS OF THIN FILM DEPOSITION

SNT5039 Nano Processing (Deposition Technology)

INTRODUCTION (DEPOSITION KINETICS)

The flux of reactant species

INTRODUCTION (DEPOSITION KINETICS)

The flux of reactant consumed by

cm/sec) and CS is the concentration of

All of the processes involving surface

INTRODUCTION (DEPOSITION KINETICS)

Assuming steady-state deposition,

The growth rate of the film is now

where, v is the deposition rate or velocity

INTRODUCTION (DEPOSITION KINETICS)

Now, we define Y to be the mole fraction of the incorporating species

where CT is the concentration of all molecules in the gas phase.

Example : Si deposition by the reaction of SiCl4 and hydrogen

Y is also equal to the partial pressure of the incorporating species, PG,

INTRODUCTION (DEPOSITION KINETICS)

After introducing Y, the deposition velocity is now

we can obtain v=2.4x10-7cm/sec = 0.14 um/min

INTRODUCTION (DEPOSITION KINETICS)

Two limiting cases

This is the surface reaction controlled case.

This is the mass transfer, or gas phase diffusion, controlled case.

INTRODUCTION (DEPOSITION KINETICS)

For mass transfer controlled regime

For surface reaction controlled regime

SNT5039 Nano Processing (Deposition Technology)

INTRODUCTION (DEPOSITION KINETICS)

When operating CVD reactors in the

Wafers are placed side by side (or

This can be improved by going to

However, the deposition rate will be

increase the deposition rate.

INTRODUCTION (DEPOSITION KINETICS)

Operated in the pressure range of 250mTorr to 2Torr and higher

Films deposited by LPCVD are mainly poly-Si, oxides, nitrides, W and

Usually films are deposited in the reaction-rate limited regime and

because diffusion of reactants is fast enough in the low pressure regime

Disadvantages of LPCVD could be low deposition rate and the use of

2. Chemical Vapor Deposition (CVD)

3. Physical Vapor Deposition (PVD)

SNT5039 Nano Processing (Deposition Technology)

polycrystalline Si (called Poly-Si), dielectric

materials such as tungsten silicide (WSi6),

SNT5039 Nano Processing (Deposition Technology)

Advantages of CVD processes over other

SNT5039 Nano Processing (Deposition Technology)

Desired characteristics of CVD films are

aspect ratio (AR) of a feature (AR = height of feature/width of feature = h/w)

SNT5039 Nano Processing (Deposition Technology)

SNT5039 Nano Processing (Deposition Technology)

WF6(g)+3H2(g) W(c) +6HF(g)

Ga(CH3)3(g)+AsH3(g) GaAs(c) +3CH4(g)

ZnCl2(g)+H2S(g) ZnS(c) +2HCl(g)

2TiCl4(g)+2NH3(g) +H2(g)TiN(c) +8HCl(g)