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256K(32Kx8)CMOSEPROM
FEATURES PACKAGE TYPES
A3 14
15 A2
A6
A12
VPP
1 NU
32
Vcc
31 A14
30 A13
27
A1 10
A0 11
12
NC
13
O0
25
24
23
A8
A9
A11
NC
OE
A10
CE
O7
O6
20
19
18
17
21
VPP
A12
1
2
28
27
VCC
A14
A7
A6
A5
3
4
5
26
25
24
A13
A8
A9
A4
23
A11
A3
22
OE
A2
A1
A0
8
9
10
21
20
19
A10
CE
O7
O0
11
18
O6
O1
O2
12
13
14
17
16
15
O5
O4
O3
VSS
27C256
26
22
14
DIP/SOIC
DESCRIPTION
28
A3
A2
VSOP
OE
A11
A9
22
23
24
21
20
19
A10
CE
O7
A8
A13
A14
VCC
VPP
A12
A7
A6
25
26
27
28
1
2
3
4
18
17
16
15
14
13
12
11
O6
O5
O4
O3
VSS
O2
O1
O0
27C256
29
27C256
A5
A4
16
21 VSS
20 D2
19 D1
18 D0
17 A0
16 A1
PLCC
A7
VPP 8
A12 9
A7 10
A6 11
A5 12
A4 13
28 A10
27 CE
26 D7
25 D6
24 D5
23 D4
22 D3
27C256
1
2
3
4
5
6
7
15
- 20 mA Active current
OE
A11
A9
A8
A13
A14
VCC
O2
VSS
NU
O3
O4
O5
TSOP
O1
A5
A4
A3
5
6
7
10
9
8
A0
A1
A2
DS11001L-page 1
27C256
1.0
1.1
not
abov
impli
E
thos
Le
E listed
C unde
r
T Max
R imu
ICm
Ratin
A gs
L may
C caus
e
H perm
A anen
Rt
dam
A age
C to
the
T
devic
E e.
R This
is a
IS stres
TI s ratC ing
only
S and
e
ed.
Expo
sure
to
maxi
mum
ratin
g
conditio
ns
for
exte
nded
perio
ds
may
affec
t
devi
ce
relia
bility.
funct
M ional
a oper
xi ation
m of
the
u devic
m e at
R thos
at e or
any
in
other
g cond
s* itions
abov
VCCe
VPPthos
e
programming
.......................................
indic
Voltage on A9 w.r.t. V
ated
Output
voltage w.r.t. V
in
the temperature ..........................
Storage
oper
Ambient
temp. with power applied .....
ation
*N listin
oti gs of
ce: this
Str speci
es ficati
se on is
T
A
B
L
E
11:
PI
N
F
U
N
C
TI
O
N
T
A
B
L
E
Name
A0-A14
Function
Address Inputs
CE
Chip Enable
OE
Output Enable
VPP
Programming Voltage
O0 - O7
Data Output
VCC
VSS
Ground
NC
NU
eTempera
TABLE 1-2:
aNote 1:
nTypical
g
P
active
e
a
current
;
r
I increas
t
Input
Voltages
, es .75
s
EmA per
:
=MHz up
Input
Leakage
C
I to
=
Output Voltages
noperatin
C
d
o
g
u
m
Output
Leakage
frequen
s
m
Input Capacitance
t cy for
e
r all
r
i temper
c
Output
Capacitance
aature
i
l ranges.
a
a
Power
Supply
Current,
l
n
Active
T
d
e
*
m
E
p
xDS11001
e
tL-page 2
r
e1996
a
nMicrochip
t
Power
Supply
Current,
dTechnolo
u
Standby
egy Inc.
27C256
TABLE 1-3:
Sym
Min
tACC
Max Min
Max
90
100
Min
Max Min
120
150
Max Min
200
Max
ns
CE
=OE =VIL
Delay
CE to Output Delay
tCE
90
100
120
150
200
ns
OE
= VIL
OE to Output Delay
tOE
40
45
55
65
75
ns
CE
= VIL
CE or OE to O/P
High Impedance
tOFF
tOH
30
0
0
30
035
0
0
0
50
55
ns
ns
FIGURE 1-1:
READ
WAVEFORMS
VIH
Address
Address Valid
VIL
VIH
CE
VIL
tCE(2)
VIH
OE
Outputs
O0 - O7
VIL
VOH
High Z
tACC
(2) OE
may
be
delay
ed up
to t
CE - t
OE
after
the
fallin
g
edge
tOH
Valid Output
VOL
tOFF(1,3)
tOE(2)
High Z
of CE
witho
ut
impa
ct on
tCE
(3) This
para
meter
is
samp
led
and
is not
100%
teste
d.
1996 Microchip
Technology Inc.
DS11001Lpage 3
27C256
TABLE 1-4:
PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25C 5C
VCC = 6.5V 0.25V, VPP = VH = 13.0V 0.25V
Parameter
Status
Symbol
Min
Max.
Input Voltages
Logic1
Logic0
VIH
VIL
2.0
-0.1
VCC+1
0.8
Input Leakage
I LI
-10
Logic1
Logic0
VOH
VOL
2.4
I CC2
20
mA
Note 1
I PP2
25
mA
Note 1
VH
11.5
Output Voltages
A9 Product Identification
Units
Conditions
V
V
10
0.45
12.5
VIN = 0V to VCC
V
V
IOH = -400 A
IOL = 2.1 mA
Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP
TABLE 1-5:
PROGRAMMING AC CHARACTERISTICS
Parameter
Symbol
Min.
Max.
Units
tAS
tDS
tDH
tAH
tDF
130
ns
tVCS
tPW
95
105
CE Set-Up Time
tCES
OE Set-Up Time
tOES
tVPS
tOE
100
Remarks
100 s typical
ns
Note 1: For express algorithm, initial programming width tolerance is 100 s 5%.
2:
This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no
longer driven (see timing diagram).
DS11001L-page 4
27C256
FIGURE 1-2:
PROGRAMMING WAVEFORMS
Program
Verify
VIH
Address
Address Stable
VIL
tAS
VIH
Data
Data Stable
VIL
tDS
tAH
High Z
tDH
13.0V(2)
VPP
5.0V
tVPS
6.5V(2)
VCC
tVCS
5.0V
VIH
CE
VIL
tPW
VIH
tOES
OE
tOE
(1)
VIL
Notes:
TABLE 1-6:
(1) tDF and tOE are characteristics of the device but must be accommodated by the programmer
(2) VCC = 6.5 V 0.25V, VPP = VH = 13.0V 0.25V for express algorithm
MODES
Operation Mode
CE
OE
VPP
A9
O0 - O7
Read
VIL
VIL
VCC
DOUT
Program
VIL
VIH
VH
DIN
Program Verify
VIH
VIL
VH
DOUT
Program Inhibit
VIH
VIH
VH
High Z
Standby
VIH
VCC
High Z
Output Disable
VIL
VIH
VCC
High Z
Identity
VIL
VIL
VCC
VH
Identity Code
X = Dont Care
2)
1.2
Read Mode
1)
addresses
the
are
address
DS11001L-page 5
27C256
is
1.3
hi
St gh
a (VI
n H)
d an
1.4
b d
y a
M pr
o og
d ra
e m
m
T od
h e
e is
no
s t
t de
a fin
n ed
d .
b
W
y
he
m
n
o
th
d es
e e
co
i nd
s itio
d ns
e ar
fi e
n m
e et,
d th
e
w su
h pp
e ly
n cu
rre
t nt
h wil
e l
dr
C op
E fro
p m
i 20
n m
A
to
10
0
A.
Out
put
Ena
ble
Th
is
fea
tur
e
eli
mi
nat
es
bu
s
co
nte
nti
on
in
m
ulti
ple
bu
s
mi
cr
op
ro
ce
ss
or
sy
ste
ms
an
d
th
e
ou
tp
uts
go
to
a
hig
h
i i
ms
p
e h
d i
a g
n h
c
e a
n
w d
h
e t
n h
e
t
h p
e r
o
f g
o r
ll a
o m
w
i m
n o
g d
e
c
o i
n s
d
it n
i o
o t
n
i d
s e
t f
r i
u n
e e
: d
1
T
h Era
e se
O
E
p
i
n
Mo
de
(U.
V.
Wi
nd
ow
ed
Ver
sio
ns)
Wi
nd
ow
ed
pr
od
uct
s
off
er
th
e
abi
lity
to
er
as
e
th
e
m
e
mor
y
arr
ay.
Th
e
m
e
m
or
y
m
atr
ix
is
er
as
ed
to
th
e
all
1s
sta
te
wh
en
ex
po
se
d
to
ult
rav
iol
et
lig
ht.
To
e
n
s
u
r
e
c
o
m
p
l
e
t
e
e
r
a
s
u
r
e
,
a
d
o
s
e
o
f
1
5
w
a
t
t
s
e
c
o
n
d
/
c
m
2
i
s
r
e
q
u
i
r
e
d
.
T
h
i
s
m
ea
ns
th
at
th
e
de
vic
e
wi
nd
ow
m
us
t
be
pl
ac 1.6
ed
wit
hi
n
on
e
inc
h
an
d
dir
ec
tly
un
de
rn
ea
th
an
ult
ravio
let
la
m
p
wit
h
a
wa
vel
en
gt
h
of
25
37
An
gs
tro
m
s,
int
en
sit
y
of
12
,0
00
W/
cm
2
for
ap
pr
oxi
m
ate
ly
20
mi
nute
s.
Pro
gra
mm
ing
Mo
de
The
Exp
ress
Alg
orit
hm
has
bee
n
dev
elop
ed
to
imp
rove
on
the
pro
gra
mmi
ng
thro
ugh
put
time
s in
a
pro
duct
ion
envi
ron
me
nt.
U A
p flow
4)
to cha
te rt of
C
E
n the
1 exp
0 res
p
i
n
0- s
mi alg
cr orit
os hm
i
s
ec is
o sho
n wn
l
o
w
.
d in
p Fig
ul ure
se 1-3.
s
Pro
ar gra
e mmi
a ng
p take
pli s
e plac
d e
u whe
nti n:
l VCC
th is
e bro
by ught
te to
is the
ve pro
rifi per
e volt
d. age,
N VPP
o is
ov bro
er ught
pr to
the
o
pro
gr
per
a
VH
m
leve
mi
l,
n
the
g
OE
is
pin
re
is
q
high
ui ,
re and
d.
t
h
e
Sinc
e
the
eras
ed
stat
e is
1
in
the
arra
y,
prog
ram
min
g of
0
is
requ
ired.
The
addr
ess
to
be
prog
ram
med
is
set
via
pins
A0A14
and
the
data
to ram
be s
1.7
pr that
og loca
ra tion.
m
m
ed
is
pr
ese
nt
ed
to
pi
ns
O
0O
7.
W
he
n
da
ta
an
d
ad
dr
es
s
ar
e
st
abl
e,
a
lo
w
go
in
g
pu
ls
e
on
th
e
C
E
lin
e
pr
og
Ver
ify
Aft
er
the
arr
ay
ha
s
be
en
pro
gra
m
me
d it
mu
st
be
veri
fie
d
to
en
sur
e
all
the
bits
hav
e
be
en
cor
rec
tly
pro
gra
m
me
d.
Thi
s
mo
de
is
ent
ere
d
wh
en
all
t e is
h high
e ,
f and
o the
ll OE
o line
w is
i low.
g
c
Inhi
bit
o W
n h
d e
iti n
o pr
n o
s gr
a a
r m
e m
1)
2)
e
e
b
e
u
n
er
s
e
p
ar
at
e
c
o
nt
ro
l
m in
e g
to
t: m
V ul
CC ti
c
h
is pl
at e
th d
e e
pr vi
op c
er e
le s
ve in
l,
p
VPar
P
al
is le
at l
th
wi
e
th
pr
di
op
fer
fe
V
re
H
le nt
ve d
l, at
3)
th a,
e o
C nl
E y
lin C
d
ev
ic
e.
B
y
p
ul
si
n
g
th
e
C
E
lin
e
lo
w
o
n
a
p
ar
tic
ul
ar
d
ev
i it
la
c h
bl
e C
, E
t el
th
h d
ei
a hi
t g
in
d wi
ut
e ll
pi
v n
i ot
s.
c b
e e
pr
w o
i gr
l a
l m
m
b e
e d
wi
p th
r th
o e
g d
r at
a a,
m al
m th
e o
d u
; g
h
a a
l d
l dr
e
o s
t s
h a
e n
r d
d
d at
e a
v wi
i ll
c b
e e
s a
v
w ai
1.9
Ide
ntit
y
Mo
de
In
this
mod
e
spe
cific
data
is
outp
ut
whic
h
iden
tifie
s
the
man
ufac
ture
r as
Micr
ochi
p
Tec
hnol
ogy
Inc.
and
devi
ce
type
.
This
mod
e is
en O
ter E
by
ed li
te
w n
he e
n s
Pi m
n u
A st
9 b
is e
at
ta at
ke VI
L.
to A
V 0
ar
is
( u
1 s
1 e
. d
5 to
V a
c
t c
o e
s
1 s
2 a
. n
5 y
V of
) th
s
o
n
O
0
th
ro
u
g
h
O
7.
Pin
e n
o
C nE er
a
a s
n a
d bl
Output
Identity
A0
H
0O O O O O O O e
7 6 5 4 3 2 1 0
x
Manufacturer
Device Type*
VIL
VIH
0 0 1 0 1 0 0 1 29
1 0 0 0 1 1 0 0 8C
. e
t
T w
h o
Input
*
Cod
e
subj
ect
to
cha
nge
1001Lpage 6
1996
DMicrochip
STechnolo
1gy Inc.
27C256
FIGURE 1-3: PROGRAMMING EXPRESS ALGORITHM
Conditions:
Tamb = 25C 5C
VCC = 6.5 0.25V
Start
ADDR = First Location
VCC = 6.5V
VPP = 13.0V
X=0
Program one 100 s pulse
Increment X
Verify
Byte
Pass
Fail
No
Yes Device
X = 10 ?
Failed
Last
Address?
Yes
No
Increment Address
VCC = VPP = 4.5V, 5.5V
Yes
Device
Passed
DS11001L-page 7
All
bytes
= original
data?
No
Devi
Fail
27C256
NOTES:
DS11001L-page 8
1996
Microchip
Technology Inc.
27C256
NOTES:
DS11001L-page 9
27C256
NOTES:
DS11001L-page
10
1996
Microchip
Technology Inc.
27C256
27C256 Product Identification System
To order or to obtain information (e.g., on pricing or delivery), please use listed part numbers, and refer to factory or listed sales offices.
27C256 90 I /TS
Package:
Temperature
Range:
Access
Time:
Device
L
P
SO
TS
VS
=
=
=
=
=
Blank = 0C to +70C
I = -40C to +85C
E = -40C to +125C
90
10
12
15
20
27C256
=
=
=
=
=
90 ns
100 ns
120 ns
150 ns
200 ns
256K (32K x 8) CMOS EPROM
DS11001L-page 11
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na
Micro
chip
Techn
ology
Gmb
H
Gusta
vHeine
mann
-Ring
125
D8173
9
Muen
chen,
Germ
any
Tel: 49 89 627
144 0 Fax: 49
89 627 144
44
Italy
Arizona
Microchip
Technolog
y SRL
Centro
Direzional
e Colleone
Pas
Taurus 1
Viale
Colleoni 1
2
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0
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1
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a
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y
Tel: 39 39
6899939 Fax: 39
39 689 9883
JAPAN
Microchip
Technology Intl.
Inc.
Benex S-1 6F
3-18-20, Shin
Yokohama
Kohoku-Ku,
Yokohama
Kanagawa 222
Japan
Tel: 81 45 471
6166 Fax: 81 45
471 6122
9/3/96
DS1
100
1Lpa
ge 12 1996 Microchip
Technology Inc.