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27C256

256K(32Kx8)CMOSEPROM
FEATURES PACKAGE TYPES

A3 14

15 A2

A6

A12
VPP
1 NU
32
Vcc
31 A14
30 A13

27

A1 10
A0 11
12
NC
13
O0

25
24
23

A8
A9
A11
NC
OE
A10
CE
O7
O6

20

19

18

17

21

VPP
A12

1
2

28
27

VCC
A14

A7
A6
A5

3
4
5

26
25
24

A13
A8
A9

A4

23

A11

A3

22

OE

A2
A1
A0

8
9
10

21
20
19

A10
CE
O7

O0

11

18

O6

O1
O2

12
13
14

17
16
15

O5
O4
O3

VSS

27C256

The Microchip Technology Inc. 27C256 is a CMOS


256K bit electrically Programmable Read Only Memory
(EPROM). The device is organized as 32K words by 8

26

22

14

DIP/SOIC

DESCRIPTION

28

A3
A2

- Tape and reel


Data Retention > 200 years

VSOP
OE
A11
A9

22
23
24

21
20
19

A10
CE
O7

A8
A13
A14
VCC
VPP
A12
A7
A6

25
26
27
28
1
2
3
4

18
17
16
15
14
13
12
11

O6
O5
O4
O3
VSS
O2
O1
O0

27C256

A complete family of packages is offered to provide the


most flexibility in applications. For surface mount applications, PLCC, SOIC, VSOP or TSOP packaging is
available. Tape and reel packaging is also available for
PLCC or SOIC packages.

29

27C256

- 28-pin Thin Small Outline Package (TSOP)


- 28-pin Very Small Outline Package (VSOP)

bits (32K bytes). Accessing individual bytes from an


address transition or from power-up (chip enable pin
going low) is accomplished in less than 90 ns. This very
high speed device allows the most sophisticated microprocessors to run at full speed without the need for
WAIT states. CMOS design and processing enables
this part to be used in systems where reduced power
consumption and reliability are requirements.

A5
A4

16

- 28-pin SOIC package

Available for the following temperature ranges:


- Commercial:
0C to +70C
- Industrial:
-40C to +85C
- Automotive:
-40C to +125C

21 VSS
20 D2
19 D1
18 D0
17 A0
16 A1

PLCC
A7

High speed express programming algorithm


Organized 32K x 8: JEDEC standard pinouts
- 28-pin Dual-in-line package
- 32-pin PLCC Package

Separate chip enable and output enable controls

VPP 8
A12 9
A7 10
A6 11
A5 12
A4 13

Auto ID aids automated programming

28 A10
27 CE
26 D7
25 D6
24 D5
23 D4
22 D3

27C256

- 100 A Standby current


Factory programming available
Auto-insertion-compatible plastic packages

1
2
3
4
5
6
7

15

- 20 mA Active current

OE
A11
A9
A8
A13
A14
VCC

O2
VSS
NU
O3
O4
O5

CMOS Technology for low power consumption

TSOP

O1

High speed performance


- 90 ns access time available

A5
A4
A3

1996 Microchip Technology Inc.

5
6
7

10
9
8

A0
A1
A2

DS11001L-page 1

27C256
1.0

1.1

not

abov

impli

E
thos
Le
E listed
C unde
r
T Max
R imu
ICm
Ratin
A gs
L may
C caus
e
H perm
A anen
Rt
dam
A age
C to
the
T
devic
E e.
R This
is a
IS stres
TI s ratC ing
only
S and
e

ed.
Expo
sure
to
maxi
mum
ratin
g
conditio
ns
for
exte
nded
perio
ds
may
affec
t
devi
ce
relia
bility.

funct

M ional
a oper
xi ation
m of
the
u devic
m e at
R thos
at e or
any
in
other
g cond
s* itions
abov

VCCe

VPPthos
e
programming
.......................................
indic

Voltage on A9 w.r.t. V
ated

Output
voltage w.r.t. V
in
the temperature ..........................
Storage

oper
Ambient
temp. with power applied .....
ation
*N listin
oti gs of
ce: this

Str speci
es ficati
se on is

T
A
B
L
E
11:
PI
N
F
U
N
C
TI
O
N
T
A
B
L
E

Name
A0-A14

Function
Address Inputs

CE

Chip Enable

OE

Output Enable

VPP

Programming Voltage

O0 - O7

Data Output

VCC

+5V Power Supply

VSS

Ground

NC

No Connection; No Internal Connection

NU

Not Used; No External Connection Is


Allowed
rd

eTempera
TABLE 1-2:

IPP Read Current


ture
VPP
RRanges

aNote 1:
nTypical
g
P
active
e
a
current
;
r
I increas
t
Input
Voltages
, es .75
s
EmA per
:
=MHz up
Input
Leakage
C
I to
=
Output Voltages
noperatin
C
d
o
g
u
m
Output
Leakage
frequen
s
m
Input Capacitance
t cy for
e
r all
r
i temper
c
Output
Capacitance
aature
i
l ranges.
a
a
Power
Supply
Current,
l
n
Active
T
d
e
*

m
E
p
xDS11001
e
tL-page 2
r
e1996
a
nMicrochip
t
Power
Supply
Current,
dTechnolo
u
Standby
egy Inc.

27C256
TABLE 1-3:

READ OPERATION AC CHARACTERISTICS


AC Testing Waveform:
Output Load:
Input Rise and Fall Times:
Ambient Temperature:

VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V


1 TTL Load + 100 pF
10 ns
Commercial:
Tamb = 0C to +70C
Industrial:
Tamb = -40C to +85C
Tamb = -40C to +125C
Automotive:

27C256-90* 27C256-10* 27C256-12


Parameter
Address to Output

Sym

Min

tACC

Max Min

Max

90

100

Min

27C256-15 27C256-20 Units Conditions

Max Min

120

150

Max Min

200

Max
ns

CE

=OE =VIL

Delay
CE to Output Delay

tCE

90

100

120

150

200

ns

OE

= VIL

OE to Output Delay

tOE

40

45

55

65

75

ns

CE

= VIL

CE or OE to O/P
High Impedance

tOFF

Output Hold from


Address CE or OE,
whichever goes first

tOH

30

0
0

30

035
0

0
0

50

55

ns

ns

* -10, -90 AC Testing


Waveform: VIH =
2.4V and VIL = .45V;
VOH = 1.5V and VOL
= 1.5V
Output Load: 1 TTL
Load + 30pF

FIGURE 1-1:
READ
WAVEFORMS

VIH
Address

Address Valid
VIL
VIH

CE
VIL

tCE(2)

VIH
OE

Outputs
O0 - O7

VIL
VOH

High Z

tACC

(2) OE
may
be
delay
ed up
to t
CE - t
OE

after
the
fallin
g
edge

tOH
Valid Output

VOL

Notes: (1) tOFF is


specified for OE
or CE, whichever
occurs first

tOFF(1,3)

tOE(2)

High Z

of CE
witho
ut
impa
ct on
tCE

(3) This
para
meter
is
samp
led
and
is not
100%
teste
d.

1996 Microchip
Technology Inc.
DS11001Lpage 3

27C256
TABLE 1-4:

PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25C 5C
VCC = 6.5V 0.25V, VPP = VH = 13.0V 0.25V

Parameter

Status

Symbol

Min

Max.

Input Voltages

Logic1
Logic0

VIH
VIL

2.0
-0.1

VCC+1
0.8

Input Leakage

I LI

-10

Logic1
Logic0

VOH
VOL

2.4

VCC Current, program & verify

I CC2

20

mA

Note 1

VPP Current, program

I PP2

25

mA

Note 1

VH

11.5

Output Voltages

A9 Product Identification

Units

Conditions

V
V

10
0.45

12.5

VIN = 0V to VCC

V
V

IOH = -400 A
IOL = 2.1 mA

Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP

TABLE 1-5:

PROGRAMMING AC CHARACTERISTICS

for Program, Program Verify


and Program Inhibit Modes

AC Testing Waveform: VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V


Output Load:
1 TTL Load + 100pF
Ambient Temperature:
Tamb=25C 5C
VCC= 6.5V 0.25V, VPP = VH = 13.0V 0.25V

Parameter

Symbol

Min.

Max.

Units

Address Set-Up Time

tAS

Data Set-Up Time

tDS

Data Hold Time

tDH

Address Hold Time

tAH

Float Delay (2)

tDF

130

ns

VCC Set-Up Time

tVCS

Program Pulse Width (1)

tPW

95

105

CE Set-Up Time

tCES

OE Set-Up Time

tOES

VPP Set-Up Time

tVPS

tOE

100

Data Valid from OE

Remarks

100 s typical

ns

Note 1: For express algorithm, initial programming width tolerance is 100 s 5%.

2:

This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no
longer driven (see timing diagram).

DS11001L-page 4

1996 Microchip Technology Inc.

27C256
FIGURE 1-2:

PROGRAMMING WAVEFORMS

Program

Verify

VIH
Address

Address Stable
VIL
tAS

VIH
Data

Data Stable

VIL
tDS

tAH

High Z

Data Out Valid


tDF
(1)

tDH

13.0V(2)
VPP
5.0V

tVPS

6.5V(2)
VCC

tVCS

5.0V
VIH
CE
VIL

tPW

VIH

tOES

OE

tOE
(1)

VIL

Notes:

TABLE 1-6:

(1) tDF and tOE are characteristics of the device but must be accommodated by the programmer
(2) VCC = 6.5 V 0.25V, VPP = VH = 13.0V 0.25V for express algorithm

MODES

Operation Mode

CE

OE

VPP

A9

O0 - O7

Read

VIL

VIL

VCC

DOUT

Program

VIL

VIH

VH

DIN

Program Verify

VIH

VIL

VH

DOUT

Program Inhibit

VIH

VIH

VH

High Z

Standby

VIH

VCC

High Z

Output Disable

VIL

VIH

VCC

High Z

Identity

VIL

VIL

VCC

VH

Identity Code

X = Dont Care

2)
1.2

Read Mode

(See Timing Diagrams and AC Characteristics)


Read Mode is accessed when:

1)

the CE pin is low to power up (enable) the chip

the OE pin is low


to gate the data to
the output pins

For Read operations, if


the
stable,

addresses
the

are

address

access time (tACC) is


equal to the delay from
CE to output (tCE). Data

is transferred to the output after a delay from the fallingedge of OE (tOE).


1996 Microchip Technology Inc.

DS11001L-page 5

27C256
is

1.3

hi

St gh
a (VI
n H)
d an
1.4
b d
y a
M pr
o og
d ra
e m
m

T od
h e
e is

no

s t
t de
a fin
n ed

d .
b
W
y
he
m
n
o
th
d es
e e
co
i nd
s itio
d ns
e ar
fi e
n m
e et,
d th
e
w su
h pp
e ly
n cu
rre
t nt
h wil
e l
dr
C op
E fro
p m
i 20
n m
A

to
10
0

A.

Out
put
Ena
ble
Th
is
fea
tur
e
eli
mi
nat
es
bu
s
co
nte
nti
on
in
m
ulti
ple
bu
s
mi
cr
op
ro
ce
ss
or
sy
ste
ms
an
d
th
e
ou
tp
uts
go
to
a
hig
h

i i
ms
p
e h
d i
a g
n h
c
e a
n
w d
h
e t
n h
e
t
h p
e r
o
f g
o r
ll a
o m
w
i m
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g d
e
c
o i
n s
d
it n
i o
o t
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i d
s e
t f
r i
u n
e e
: d

1
T

h Era
e se
O
E
p
i
n

Mo
de
(U.
V.
Wi
nd
ow

ed
Ver
sio
ns)
Wi
nd
ow
ed
pr
od
uct
s
off
er
th
e
abi
lity
to
er
as
e
th
e
m
e
mor
y
arr
ay.
Th
e
m
e
m
or
y
m
atr
ix
is
er
as
ed
to
th
e
all
1s
sta
te
wh
en
ex
po
se
d
to
ult
rav
iol
et
lig
ht.
To

e
n
s
u
r
e
c
o
m
p
l
e
t
e
e
r
a
s
u
r
e
,
a
d
o
s
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o
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5
w
a
t
t
s
e
c
o
n
d
/
c
m
2

i
s
r
e
q
u
i
r
e
d
.
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h
i
s
m

ea
ns
th
at
th
e
de
vic
e
wi
nd
ow
m
us
t
be
pl
ac 1.6
ed
wit
hi
n
on
e
inc
h
an
d
dir
ec
tly
un
de
rn
ea
th
an
ult
ravio
let
la
m
p
wit
h
a
wa
vel
en
gt
h
of
25
37
An
gs
tro
m
s,
int
en
sit
y
of
12
,0
00

W/
cm
2

for
ap
pr
oxi
m
ate
ly
20
mi
nute
s.

Pro
gra
mm
ing
Mo
de
The
Exp
ress
Alg
orit
hm
has
bee
n
dev
elop
ed
to
imp
rove
on
the
pro
gra
mmi
ng
thro
ugh
put
time
s in
a
pro
duct
ion
envi
ron
me
nt.

U A
p flow

4)

to cha
te rt of

C
E

n the
1 exp
0 res

p
i
n

0- s
mi alg
cr orit
os hm

i
s

ec is
o sho
n wn

l
o
w
.

d in
p Fig

ul ure
se 1-3.
s

Pro
ar gra

e mmi
a ng
p take
pli s
e plac
d e
u whe
nti n:
l VCC
th is
e bro
by ught
te to
is the
ve pro
rifi per
e volt
d. age,
N VPP
o is
ov bro
er ught
pr to
the
o
pro
gr
per
a
VH
m
leve
mi
l,
n
the
g
OE
is
pin
re
is
q
high
ui ,
re and
d.

t
h
e

Sinc
e
the
eras
ed
stat
e is
1
in
the
arra
y,
prog
ram
min
g of
0
is
requ
ired.
The
addr
ess
to
be
prog
ram
med
is
set
via
pins
A0A14
and
the
data

to ram
be s

1.7

pr that

og loca
ra tion.
m
m
ed
is
pr
ese
nt
ed
to
pi
ns
O
0O
7.
W
he
n
da
ta
an
d
ad
dr
es
s
ar
e
st
abl
e,
a
lo
w
go
in
g
pu
ls
e
on
th
e
C
E
lin
e
pr
og

Ver
ify
Aft
er
the
arr
ay
ha
s
be
en
pro
gra
m
me
d it
mu
st
be
veri
fie
d
to
en
sur
e
all
the
bits
hav
e
be
en
cor
rec
tly
pro
gra
m
me
d.
Thi
s
mo
de
is
ent
ere
d
wh
en
all

t e is
h high
e ,
f and

o the
ll OE
o line
w is
i low.

g
c

Inhi
bit

o W
n h
d e
iti n

o pr
n o
s gr
a a
r m
e m

1)

2)

e
e
b
e
u
n
er
s
e
p
ar
at
e
c
o
nt
ro
l

m in
e g

to

t: m

V ul
CC ti

c
h

is pl
at e
th d
e e
pr vi
op c
er e
le s
ve in
l,
p
VPar
P

al
is le
at l
th
wi
e
th
pr
di
op
fer
fe
V
re
H
le nt
ve d
l, at

3)

th a,
e o
C nl
E y
lin C

d
ev
ic
e.
B
y
p
ul
si
n
g
th
e
C
E
lin
e
lo
w
o
n
a
p
ar
tic
ul
ar
d
ev

i it

la

c h

bl

e C

, E

t el

th

h d

ei

a hi

t g

in

d wi

ut

e ll

pi

v n

i ot

s.

c b
e e
pr
w o
i gr
l a
l m
m
b e
e d
wi
p th
r th
o e
g d
r at
a a,
m al
m th
e o
d u
; g
h
a a
l d
l dr
e
o s
t s
h a
e n
r d
d
d at
e a
v wi
i ll
c b
e e
s a
v
w ai

1.9

Ide
ntit
y
Mo
de
In
this
mod
e
spe
cific
data
is
outp
ut
whic
h
iden
tifie
s
the
man
ufac
ture
r as
Micr
ochi
p
Tec
hnol
ogy
Inc.
and
devi
ce
type
.
This
mod
e is

en O

ter E

by

ed li

te

w n

he e

n s

Pi m

n u

A st

9 b

is e

at

ta at

ke VI

L.

to A

V 0

ar

is
( u
1 s
1 e
. d

5 to
V a
c

t c
o e
s
1 s
2 a
. n
5 y

V of
) th

s
o
n
O
0
th
ro
u
g
h
O
7.

Pin

e n

o
C nE er
a
a s
n a

d bl

Output

Identity

A0

H
0O O O O O O O e
7 6 5 4 3 2 1 0
x

Manufacturer
Device Type*

VIL
VIH

0 0 1 0 1 0 0 1 29
1 0 0 0 1 1 0 0 8C

. e

t
T w
h o

Input

*
Cod
e
subj
ect
to
cha
nge
1001Lpage 6
1996
DMicrochip
STechnolo
1gy Inc.

27C256
FIGURE 1-3: PROGRAMMING EXPRESS ALGORITHM
Conditions:
Tamb = 25C 5C
VCC = 6.5 0.25V

Start
ADDR = First Location
VCC = 6.5V
VPP = 13.0V

VPP = 13.0 0.25V

X=0
Program one 100 s pulse
Increment X

Verify
Byte

Pass

Fail
No

Yes Device
X = 10 ?

Failed

Last
Address?

Yes

No
Increment Address
VCC = VPP = 4.5V, 5.5V

Yes

Device
Passed

1996 Microchip Technology Inc.

DS11001L-page 7

All
bytes
= original
data?

No

Devi
Fail

27C256
NOTES:

DS11001L-page 8
1996
Microchip
Technology Inc.

27C256
NOTES:

1996 Microchip Technology Inc.

DS11001L-page 9

27C256
NOTES:

DS11001L-page
10
1996
Microchip
Technology Inc.

27C256
27C256 Product Identification System
To order or to obtain information (e.g., on pricing or delivery), please use listed part numbers, and refer to factory or listed sales offices.

27C256 90 I /TS
Package:

Temperature
Range:
Access
Time:

Device

L
P
SO
TS
VS

=
=
=
=
=

Plastic Leaded Chip Carrier


Plastic DIP (Mil 600)
Plastic SOIC (Mil 300)
Thin Small Outline Package (TSOP) 8x20mm
Very Small Outline Package (VSOP) 8x13.4mm

Blank = 0C to +70C
I = -40C to +85C
E = -40C to +125C
90
10
12
15
20
27C256

=
=
=
=
=

90 ns
100 ns
120 ns
150 ns
200 ns
256K (32K x 8) CMOS EPROM

1996 Microchip Technology Inc.

DS11001L-page 11

WORLDWIDESALES&SERVICE
AMERICAS
Corporate Office
Microchip Technology Inc.
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 602 786-7200 Fax: 602 786-7277
Technical Support: 602 786-7627
Web: http://www.microchip.com

Atlanta
Microchip Technology Inc.
500 Sugar Mill Road, Suite
200B Atlanta, GA 30350
Tel: 770 640-0034 Fax: 770 640-0307

Boston
Microchip Technology
Inc. 5 Mount Royal
Avenue Marlborough,
MA 01752
Tel: 508 480-9990 Fax: 508 480-8575

Chicago
Microchip Technology Inc.
333 Pierce Road, Suite
180 Itasca, IL 60143
Tel: 708 285-0071 Fax: 708 285-0075

Dallas
Microchip Technology Inc.
14651 Dallas Parkway, Suite
816 Dallas, TX 75240-8809
Tel: 972 991-7177 Fax: 972 991-8588

Dayton
Microchip Technology
Inc. Suite 150
Two Prestige Place
Miamisburg, OH
45342
Tel: 513 291-1654 Fax: 513 291-9175

Los Angeles
Microchip Technology Inc.
18201 Von Karman, Suite
1090 Irvine, CA 92612
Tel: 714 263-1888 Fax: 714 263-1338

New York
Microchip Technmgy Inc.
150 Motor Parkway, Suite
416 Hauppauge, NY 11788
Tel: 516 273-5305 Fax: 516 273-5335

San Jose
Microchip Technology Inc.
2107 North First Street, Suite
590 San Jose, CA 95131
Tel: 408 436-7950 Fax: 408 436-7955

Toronto
Microchip Technology Inc.
5925 Airport Road, Suite
200

Mississauga,
Ontario L4V
1W1, Canada
Tel: 905 4056279 Fax: 905
405-6253

ASIA/PACI
FIC
China
Microchip
Technology
Unit 406 of
Shanghai
Golden
Bridge Bldg.
2077 Yanan
Road West,
Hongiao
District
Shanghai,
Peoples
Republic of
China Tel: 86
21 6275 5700
Fax: 011 86
21 6275 5060

Hong Kong
Microchip
Technology
R
M
3
8
0
1
B
,
T
o
w
e
r
T
w
o
M
e
t
r
o
p
l
a
z
a
223 Hing
Fong Road
Kwai Fong,
N.T. Hong
Kong

Tel: 852 2 401


1200 Fax: 852 2
401 3431

India
Microchip
Technology
No.
6,
Leg
acy,
Con
vent
Roa
d
Ban
galo
re
560
025
Indi
a
Tel: 91 80 526
3148 Fax: 91 80
559 9840

Korea
Microchip
Technology
168-1, Youngbo
Bldg. 3 Floor
Sams
ungDong
,
Kang
namKu,
Seoul
,
Korea
Tel: 82 2 554
7200 Fax: 82 2
558 5934

Singapore
M
i
c
r
o
c
h
i
p
T
e
c
h
n
o
l

ogy 200 Middle


Road #10-03
Prime Centre
Singapore 188980
Tel: 65 334 8870 Fax: 65 334 8850

Taiwan, R.O.C
Microchip
Technology 10F1C 207
Tung Hua North Road
Taipei, Taiwan, ROC
Tel: 886 2 717 7175 Fax: 886 2 545
0139

EUROPE
United
Kingdom
Ariz
ona
Mic
roc
hip
Tec
hno
log
y
Ltd.
Uni
t 6,
The
Co
urty
ard
Meadow
Bank, Furlong
Road
Bourne
End,
Buckingha
mshire SL8
5AJ Tel: 44
1628
850303
Fax: 44
1628
850178

France
Arizo
na
Micro
chip
Techn
ology
SARL
Zone
Indus
trielle
de la
Bond
e
deviceIncorporated,
updates.
Technology
applicati
repreUSA. 9/96

2 Rue du
Buisson aux
Fraises
91300 Massy
- France
Tel: 33 1 69
53 63 20 Fax:
33 1 69 30 90
79

Germany
Arizo
na
Micro
chip
Techn
ology
Gmb
H
Gusta
vHeine
mann
-Ring
125
D8173
9
Muen
chen,
Germ
any
Tel: 49 89 627
144 0 Fax: 49
89 627 144
44

Italy
Arizona
Microchip
Technolog
y SRL
Centro
Direzional
e Colleone
Pas
Taurus 1
Viale
Colleoni 1
2
0

0
4
1
A
g
r
a
t
e
B
r
i
a
n
z
a
M
i
l
a
n
I
t
a
l
y
Tel: 39 39
6899939 Fax: 39
39 689 9883

JAPAN
Microchip
Technology Intl.
Inc.
Benex S-1 6F
3-18-20, Shin
Yokohama
Kohoku-Ku,
Yokohama
Kanagawa 222
Japan
Tel: 81 45 471
6166 Fax: 81 45
471 6122

9/3/96

Noinformation, or infringement of patents or


other intellectual property rights arising from
ons and
sentation orsuch use or otherwise. Use of Microchips
the like
warranty isproducts as critical components in life
is
given
andsupport systems is not autho-rized except
All
Printed intende
on recycled no
paper.
liability iswith express written approval by Microchip.
rights
d
assumed byNo licenses are conveyed, implicitly or
Informatio
through
Microchip otherwise, under any intellectual property
reserve
n
suggesti
Technology rights. The Microchip logo and name are
d.
contained
on only
Incorporatedregistered
trademarks
of
Microchip
in
this
1996,
and may
with respectTechnology Inc. All rights reserved. All other
publicatio
Microchi
be
to
thetrademarks mentioned herein are the
n
superse
accuracy orproperty of their respective companies.
p
regarding
ded by
use of such

DS1
100

1Lpa

ge 12 1996 Microchip
Technology Inc.

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