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Microwave Enginering
Lecture 27-28
Microwave Integrated Circuits
Dr. Sheikh Sharif Iqbal
MMIC:
Manufacturating
steps of MMICs:
Si
Si or
Sapphire
GaAs
InP
Resistivity(-cm)
103 - 105
>1014
107 - 109
107
Dielectric constant
11. 7
11.6
12.9
14
Mobility (cm2/V-s)*
700
700
4300
3000
Saturation velocity
(cm/s)
9x 106
9 X 106
1.3 X 107
1.9 X 107
Radiation Hardness
Poor
Poor
Very good
Good
Density (g/cm3')
2.3
3.9
5.3
4.8
Thermal Conductivity
(W/cm-C)
1.5
0.46
0.46
0.68
2-8
Tan @
10 GHZ
(x 10-4)
1-2
Thermal
Dielectric
Relative
dielectric Conductivity
Strength
Constant,r (KW/cm-C) (KV/cm)(x103)
10
0.3
Sapphir
9.3 11.7
0.4
Glass
20
0.01
Beryllia
2-50
6.6
2.5
MIC
Applications
Microstrip
lines
Microstrip
lumped
elements
Lumped
elements
Compound
substrate
GaAs
12.9
0.46
0.35
MMICs,
microstrips
Si
10-100
12
1.5
0.30
MMICs
Quartz
3.8
0.01
10
Microstrips
Relative
dielectric
Constant, r
Dielectric
Strength
(V/cm)(x105)
Microwave Q
MIC
Deposition
Technique
SiO
6-8
30
(E)*
SiO2
100
100-1000
(D)*
Si3N4
7.6
100
(S)*
Al203
7-10
40
(A)*, (E)
Ta205
22-25
60
100
(A), (E)
Types of Material
Surface
Resistivity
Skin Depth
@ 2 GHz
(m)
MIC
Adherence to
Deposition
dielectric
Technique
Gold (Au)
3.0
1.7
Poor
(E), (P)
Aluminum
3.3
1.9
Poor
(E)
Chromium
4.7
2.7
Good
(E)
Tantalum (Ta)
7.2
4.0
Good
(EB)*, (S)*
Molybdenum
4.7
2.7
Fair
(EB), (S)
Tungsten (W)
4.7
2.6
Fair
(S), (E)