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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

IRGP4068DPbF

IRGP4068D-EPbF

Features

• Low V CE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (I LM )

• Positive V CE (ON) Temperature co-efficient

• Ultra-low V F Hyperfast Diode

• Tight parameter distribution

• Lead Free Package

C G E
C
G
E

n-channel

V CES = 600V

I C = 48A, T C = 100°C

t SC 5µs, T J(max) = 175°C

V CE(on) typ. = 1.65V

Benefits

• Device optimized for induction heating and soft switching applications

• High Efficiency due to Low V CE(on) , Low Switching Losses and Ultra-low V F

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

C G C E
C
G C E

TO-247AC

IRGP4068DPbF

C G C E
C
G C E

TO-247AD

IRGP4068D-EPbF

G

C

E

Gate

Collector

Emitter

Absolute Maximum Ratings

 

Parameter

Max.

Units

V CES

Collector-to-Emitter Voltage

600

V

I C @ T C = 25°C

Continuous Collector Current

96

 

I C @ T C = 100°C

Continuous Collector Current

48

 

I CM

Pulse Collector Current

192

 

I LM

Clamped Inductive Load Current

192

A

I F @ T C = 160°C

Diode Continous Forward Current

8.0

I FSM

Diode Non Repetitive Peak Surge Current @ T J = 25°C

175

 

I FM

Diode Peak Repetitive Forward Current

16

V GE

Continuous Gate-to-Emitter Voltage

±20

V

Transient Gate-to-Emitter Voltage

±30

P D @ T C = 25°C

Maximum Power Dissipation

330

W

P D @ T C = 100°C

Maximum Power Dissipation

170

T

J

Operating Junction and Storage Temperature Range

-55 to +175

 

T

STG

°C

 

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

 

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

 

Thermal Resistance

 

Parameter

Min.

Typ.

Max.

Units

R θJC (IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

–––

–––

0.45

°C/W

R θJC (Diode)

Thermal Resistance Junction-to-Case-(each Diode)

–––

–––

2.0

R θCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

–––

0.24

–––

R θJA

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

80

–––

1

www.irf.com

IRGP4068DPbF/IRGP4068D-EPbF

IRGP4068DPbF/IRGP4068D-EPbF Electrical Characteristics @ T J = 25°C (unless otherwise specified)    

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

   

Parameter

Min.

Typ.

Max.

Units

 

Conditions

Ref.Fig

 

V

(BR)CES

Collector-to-Emitter Breakdown Voltage

600

V

V

GE = 0V, I C = 100µA

CT6

 

V (BR)CES /T J

Temperature Coeff. of Breakdown Voltage

0.30

V/°C

V

GE = 0V, I C = 1mA (25°C-175°C)

CT6

     

1.65

2.14

 

I C = 48A, V GE = 15V, T J = 25°C

4,5,6

V

CE(on)

Collector-to-Emitter Saturation Voltage

2.0

V

I C = 48A, V GE = 15V, T J = 150°C

8,9,10

 

2.05

I C = 48A, V GE = 15V, T J = 175°C

 

V

GE(th)

Gate Threshold Voltage

4.0

6.5

V

V

CE = V GE , I C = 1.4mA

8,9

 

V GE(th) /TJ

Threshold Voltage temp. coefficient

-21

mV/°C

V

CE = V GE , I C = 1.0mA (25°C - 175°C)

10,11

 

gfe

Forward Transconductance

32

S

V

CE = 50V, I C = 48A, PW = 80µs

 

I

CES

Collector-to-Emitter Leakage Current

1.0

150

µA

V

GE = 0V, V CE = 600V

 

450

1000

V

GE = 0V, V CE = 600V, T J = 175°C

 

V

FM

Diode Forward Voltage Drop

0.96

1.05

V

I F = 8.0A

7

 

0.81

0.86

I F = 8.0A, T J = 150°C

I

GES

Gate-to-Emitter Leakage Current

±100

nA

V

GE = ±20V

 

Switching Characteristics @ T J = 25°C (unless otherwise specified)

 
   

Parameter

Min.

Typ.

Max.

Units

 

Conditions

Ref.Fig

 

Q

g

Total Gate Charge (turn-on)

 

— 95

140

 

I C = 48A

18

 

Q

ge

Gate-to-Emitter Charge (turn-on)

 

— 28

42

nC

V

GE = 15V

CT1

 

Q

gc

Gate-to-Collector Charge (turn-on)

 

— 35

53

V

CC = 400V

             

I C = 48A, V CC = 400V, V GE = 15V

 

E

off

Turn-Off Switching Loss

— 1275

1481

µJ

R

G = 10, L = 200µH,T J = 25°C

CT4

 

Energy losses include tail

t

d(off)

Turn-Off delay time

 

— 145

176

µJ

I C = 48A, V CC = 400V, V GE = 15V

 

t

f

Fall time

 

— 35

46

R

G = 10, L = 200µH,T J = 25°C

             

I C = 48A, V CC = 400V, V GE = 15V

 

E

off

Turn-Off Switching Loss

— 1585

µJ

R

G = 10, L = 200µH,T J = 175°C

CT4

 

Energy losses include tail

t

d(off)

Turn-Off delay time

 

— 165

µJ

I C = 48A, V CC = 400V, V GE = 15V

WF1

t

f

Fall time

 

— 45

R

G =10, L=200µH, T J = 175°C

 

C

ies

Input Capacitance

 

— 3025

 

V

GE = 0V

17

 

C

oes

Output Capacitance

 

— 245

pF

V

CC = 30V

 

C

res

Reverse Transfer Capacitance

 

— 90

f

= 1.0Mhz

         

T

J = 175°C, I C = 192A

3

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

V

CC = 480V, Vp =600V

CT2

Rg = 10, V GE = +15V to 0V

 

SCSOA

Short Circuit Safe Operating Area

5

µs

V

CC = 400V, Vp =600V

16, CT3

Rg = 10, V GE = +15V to 0V

WF2

Notes:

V CC = 80% (V CES ), V GE = 20V, L = 200µH, R G = 10.

Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely.

(W)

tot

P

(W) t o t P IRGP4068DPbF/IRGP4068D-EPbF 100 90 80 70 60 50 40 30 20 10

IRGP4068DPbF/IRGP4068D-EPbF

100 90 80 70 60 50 40 30 20 10 0 0 25 50 75
100
90
80
70
60
50
40
30
20
10
0
0 25
50
75
100
125
150
175
200
I C ( )A

350

300

250

200

150

100

50

0

0 25 50 75 100 125 150 175 200
0 25
50
75
100
125
150
175
200

T C (°C)

T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
200
180
160
V GE = 18V
VGE = 15V
140
VGE = 12V
100
VGE = 10V
120
VGE = 8.0V
100
80
10
60
40
20
1
0
0 2
4
6
8
10
10
100
1000
V CE (V)
V CE (V)
Fig. 3 - Reverse Bias SOA
T J = 175°C; V GE =15V
Fig. 4 - Typ. IGBT Output Characteristics
T J = -40°C; tp = 80µs
200
200
18V
180
180
V GE =
VGE =
15V
160
160
VGE =
12V
V GE = 18V
VGE =
10V
140
VGE = 15V
VGE = 12V
140
VGE =
8.0V
120
120
VGE = 10V
VGE = 8.0V
100
100
80
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V CE (V)
V CE (V)
I
( )A
I C ( )A
EC
I
( )A
EC
I
( )A
EC

Fig. 5 - Typ. IGBT Output Characteristics T J = 25°C; tp = 80µs

Fig. 6 - Typ. IGBT Output Characteristics T J = 175°C; tp = 80µs

( )V

EC

V

( )V

( )V

EC

EC

V

V

( )A

EC

I

IRGP4068DPbF/IRGP4068D-EPbF

( )V E C E C V V ( )A E C I IRGP4068DPbF/IRGP4068D-EPbF 20 18

20

18

16

14

12

10

8

6

4

2

0

I CE = 24A I CE = 48A I CE = 96A 5 10 15
I CE = 24A
I CE = 48A
I CE = 96A
5 10
15
20

V GE (V)

Fig. 7 - Typ. Diode Forward Voltage Drop Characteristics 20 18 16 14 12 I
Fig. 7 - Typ. Diode Forward Voltage Drop
Characteristics
20
18
16
14
12
I CE = 24A
I CE = 48A
10
I CE = 96A
8
6
4
2
0
5 10 15 20 V GE (V) Fig. 9 - Typical V CE vs. V
5
10
15
20
V GE (V)
Fig. 9 - Typical V CE vs. V GE
T J = 25°C
200
180
T J = 25°C
160
T J = 175°C
140
120
100
80
60
40
20
0
0
5
10
15

20

18

16

14

12

10

8

6

4

2

0

Fig. 8 - Typical V CE vs. V GE T J = -40°C I CE
Fig. 8 - Typical V CE vs. V GE
T J = -40°C
I CE = 24A
I CE = 48A
I CE = 96A
5 10
15
20

V GE (V)

Fig. 10 - Typical V CE vs. V GE T J = 175°C

6000 5000 4000 E OFF 3000 2000 1000 0 0 25 50 75 100 ner
6000
5000
4000
E OFF
3000
2000
1000
0
0
25
50
75
100
ner gy (E
Jµ )

V GE (V)

Fig. 11 - Typ. Transfer Characteristics V CE = 50V; tp = 10µs

I C (A)

Fig. 12 - Typ. Energy Loss vs. I C T J = 175°C; L = 200µH; V CE = 400V, R G = 10; V GE = 15V

IRGP4068DPbF/IRGP4068D-EPbF 1000 td OFF 100 t F 10 0 20 40 60 80 100 ihiwS

IRGP4068DPbF/IRGP4068D-EPbF

1000 td OFF 100 t F 10 0 20 40 60 80 100 ihiwS egnc
1000
td OFF
100
t
F
10
0 20
40
60
80
100
ihiwS
egnc
)T
sni
(m
5000 4500 E OFF 4000 3500 3000 2500 2000 1500 1000 0 25 50 75
5000
4500
E OFF
4000
3500
3000
2500
2000
1500
1000
0
25
50
75
100
125
y (ren µ JE )g

I C (A)

Fig. 13 - Typ. Switching Time vs. I C T J = 175°C; L = 200µH; V CE = 400V, R G = 10; V GE = 15V

1000 td OFF 100 t F 10 0 25 50 75 100 125 (nse )miTngchiiwS
1000
td OFF
100
t
F
10
0
25
50
75
100
125
(nse )miTngchiiwS

R G ()

Fig. 15 - Typ. Switching Time vs. R G T J = 175°C; L = 200µH; V CE = 400V, I CE = 48A; V GE = 15V

10000 Cies 1000 Coes 100 Cres 10 0 20 40 60 80 100 iaC etcap
10000
Cies
1000
Coes
100
Cres
10
0 20
40
60
80
100
iaC
etcap
)Fpcna
(

V CE (V)

Fig. 17 - Typ. Capacitance vs. V CE V GE = 0V; f = 1MHz

Rg ()

Fig. 14 - Typ. Energy Loss vs. R G T J = 175°C; L = 200µH; V CE = 400V, I CE = 48A; V GE = 15V

A)(tnerrCu 18 400 16 350 T sc I sc 14 300 12 250 10 200
A)(tnerrCu
18
400
16
350
T
sc
I sc
14
300
12
250
10
200
8
150
6
100
4
50
8
10
12
14
16
18
emiT
( sµ )

V GE (V)

Fig. 16 - V GE vs. Short Circuit V CC = 400V; T C = 25°C

16 V CES = 300V 14 V CES = 400V 12 10 8 6 4
16
V
CES = 300V
14
V
CES = 400V
12
10
8
6
4
2
0
0
25
50
75
100
V
mEttaG, ( )VegatloVretti-o-e
EG

Q G , Total Gate Charge (nC)

Fig. 18 - Typical Gate Charge vs. V GE I CE = 48A; L = 600µH

IRGP4068DPbF/IRGP4068D-EPbF

IRGP4068DPbF/IRGP4068D-EPbF 1 D = 0.50 0.1 0.20 0.10 R R R R Ri (°C/W) τi (sec)
1 D = 0.50 0.1 0.20 0.10 R R R R Ri (°C/W) τi (sec)
1
D = 0.50
0.1
0.20
0.10
R
R
R
R
Ri
(°C/W)
τi
(sec)
1
2
3
4
R
R
R
R
1
2
3
4
0.0248
0.000014
0.05
τ
J
τ
τ
C
J
0.0652
0.000050
τ
1
τ
τ
τ
τ
2
3
4
0.02
1
τ
τ
τ
2
3
4
0.1537
0.001041
0.01
0.01
Ci=
τi/
Ri
0.2065
0.013663
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak
Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
epT
a lh
(Rrme
o ne ss
Z t Jh C
C /) W°

t 1 , Rectangular Pulse Duration (sec)

Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10 1 D = 0.50 0.20 0.10 0.1 0.05 R R R R Ri (°C/W)
10
1
D = 0.50
0.20
0.10
0.1
0.05
R
R
R
R
Ri
(°C/W)
τi
(sec)
1
2
3
4
0.02
R
R
R
R
1
2
3
4
0.0400
0.000030
τ
0.01
J
τ
τ
C
J
0.7532
0.000717
τ
0.01
1
τ
τ
τ
τ
2
3
4
1
τ
τ
τ
2
3
4
0.8317
0.004860
Ci= τi/Ri
0.3766
0.036590
SINGLE PULSE
0.001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak
Tj =
P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
epT
a lh
(Rrme
o ne ss
Z t Jh C
C /) W°

t 1 , Rectangular Pulse Duration (sec)

Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

IRGP4068DPbF/IRGP4068D-EPbF L DUT 0 1K VC C Fig.C.T.1 - Gate Charge Circuit (turn-off) L 80

IRGP4068DPbF/IRGP4068D-EPbF

L DUT 0 1K
L
DUT
0
1K

VC C

Fig.C.T.1 - Gate Charge Circuit (turn-off)

L 80 V DUT 480V Rg
L
80 V
DUT
480V
Rg

Fig.C.T.2 - RBSOA Circuit

4x DC DUT
4x
DC
DUT

360V

Fig.C.T.3 - S.C. SOA Circuit

VCC R = ICM DUT VCC Rg
VCC
R =
ICM
DUT
VCC
Rg

Fig.C.T.5 - Resistive Load Circuit

DIODE CLAMP / DUT L - 5V DUT / DRIVER Rg
DIODE CLAMP /
DUT
L
- 5V
DUT /
DRIVER
Rg

VCC

Fig.C.T.4 - Switching Loss Circuit

G force

Cforce 400µH D1 10K C sense DUT 0.0075µ E sense
Cforce
400µH
D1
10K
C sense
DUT
0.0075µ
E sense

E force

Fig.C.T.6 - BVCES Filter Circuit

IRGP4068DPbF/IRGP4068D-EPbF

IRGP4068DPbF/IRGP4068D-EPbF 700 140 600 120 500 100 400 80 tf 300 60 90% I CE 200
700 140 600 120 500 100 400 80 tf 300 60 90% I CE 200
700
140
600
120
500
100
400
80
tf
300
60
90% I CE
200
40
5% V CE
100
20
5% I CE
0
0
E OFF Loss
-100
-20
-0.40
0.10
0.60
1.10
VCE (V)

Time(µs)

Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175°C using Fig. CT.4

600 600 500 500 I CE V CE 400 400 300 300 200 200 100
600
600
500
500
I CE
V
CE
400
400
300
300
200
200
100
100
0
0
-100
-100
-5.00
0.00
5.00
10.00
CEV
(V)
ICE (A)

time (µS)

Fig. WF2 - Typ. S.C. Waveform @ T J = 25°C using Fig. CT.3

IRGP4068DPbF/IRGP4068D-EPbF TO-247AC package is not recommended for Surface Mount Application. www.irf.com 9

IRGP4068DPbF/IRGP4068D-EPbF TO-247AC package is not recommended for Surface Mount Application. www.irf.com 9

IRGP4068DPbF/IRGP4068D-EPbF

IRGP4068DPbF/IRGP4068D-EPbF TO-247AC package is not recommended for Surface Mount Application. www.irf.com 9

IRGP4068DPbF/IRGP4068D-EPbF TO-247AC package is not recommended for Surface Mount Application. www.irf.com 9

IRGP4068DPbF/IRGP4068D-EPbF TO-247AC package is not recommended for Surface Mount Application. www.irf.com 9

TO-247AC package is not recommended for Surface Mount Application.

IRGP4068DPbF/IRGP4068D-EPbF

IRGP4068DPbF/IRGP4068D-EPbF TO-247AD package is not recommended for Surface Mount Application. Data and specifications

IRGP4068DPbF/IRGP4068D-EPbF TO-247AD package is not recommended for Surface Mount Application. Data and specifications

IRGP4068DPbF/IRGP4068D-EPbF TO-247AD package is not recommended for Surface Mount Application. Data and specifications

TO-247AD package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site.

Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/06