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Features
VDS = -20V
ID = -3A
RDS(ON) < 80m
RDS(ON) < 100m
RDS(ON) < 130m
(VGS = -4.5V)
(VGS =- 4.5V)-15
(VGS = -2.5V)
(VGS = -1.8V)
SOT23
Top View
Bottom View
G
S
VGS
TA=25C
Continuous Drain
Current A
Pulsed Drain Current
Power Dissipation
1.4
0.9
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A t 10s
Maximum Junction-to-Ambient A Steady-State
Steady-State
Maximum Junction-to-Lead C
-15
PD
TA=70C
8
-2.4
IDM
TA=25C
Units
V
-3
ID
TA=70C
Maximum
-20
Symbol
RJA
RJL
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-55 to 150
Typ
70
100
63
Max
90
125
80
Units
C/W
C/W
C/W
Page 1 of 5
AO3413
Parameter
Drain-Source Breakdown Voltage
Conditions
ID=-250A, VGS=0V
IDSS
IGSS
VDS=0V, VGS=8V
VGS(th)
VDS=VGS ID=-250A
-0.4
ID(ON)
VGS=-4.5V, VDS=-5V
-15
Min
-20
VDS=-20V, VGS=0V
TJ=55C
70
100
85
130
IS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
12
-0.7
560
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
V
A
VGS=-2.5V, ID=-2.6A
IS=-1A,VGS=0V
Gate resistance
-1
VGS=-1.8V, ID=-1A
Diode Forward Voltage
Rg
-0.65
nA
80
Forward Transconductance
115
VSD
Output Capacitance
-1
-5
56
gFS
Coss
Units
V
80
TJ=125C
VDS=-5V, ID=-3A
Crss
Max
100
VGS=-4.5V, ID=-3A
RDS(ON)
Typ
S
-1
-1.4
745
pF
80
pF
70
pF
15
23
8.5
11
nC
1.2
nC
Qgd
2.1
nC
tD(on)
Turn-On DelayTime
7.2
ns
tr
36
ns
tD(off)
Turn-Off DelayTime
53
ns
tf
trr
56
ns
IF=-3A, dI/dt=100A/s
37
Qrr
27
49
ns
nC
A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300s pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
12
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Page 2 of 5
AO3413
20
VDS=-5V
-3.0V
-4.5V
20
-2.5V
15
-ID(A)
-ID (A)
15
-2.0V
10
-15
10
125C
VGS=-1.5V
25C
0
0
-VDS (Volts)
Figure 1: On-Region Characteristics
RDS(ON) (m
)
130
VGS=-1.8V
110
90
VGS=-2.5V
70
VGS=-4.5V
50
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
VGS=-2.5V
ID=-2.6A
1.4
VGS=-4.5V
ID=-3A
1.2
VGS=-1.8V
ID=-1A
1
0.8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
180
1E+02
ID=-3A
160
1E+01
12
140
1E+00
120
-IS (A)
RDS(ON) (m
)
1.6
Normalized On-Resistance
150
0.5
125C
100
125C
1E-01
1E-02
25C
80
1E-03
60
25C
1E-04
40
0
1E-05
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 5
AO3413
1400
VDS=-10V
ID=-3A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
800
Ciss
600
-15
400
Coss
200
0
Crss
0
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
15
20
1000
RDS(ON)
limited
TJ(Max)=150C
TA=25C
10s
100
100s
Power (W)
-ID (Amps)
10.00
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
1ms
1.00
10ms
0.1s
TJ(Max)=150C
TA=25C
0.10
10
1s
DC
0.1
0.01
0.1
10
0.00001
100
-VDS (Volts)
0.001
0.1
10
1000
Z JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=125C/W
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
10
100
1000
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Page 4 of 5
AO3413
Qg
-10V
V DC
Qgd
+
DUT
Qgs
V
Vds
ds
VD C
V gs
Vgs
Ig
C harge
t off
t on
td(on)
d(on )
Vgs
D UT
Vgs
t dd(off)
(o ff)
tr
90%
Vdd
VDC
tf
Rg
Vgs
10%
Vds
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-I F
-Vds
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Page 5 of 5