FJP3305

High Voltage Fast-Switching NPN Power Transistor

High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Regulator

1.Base

Absolute Maximum Ratings

Symbol

TO-220
2.Collector

3.Emitter

TC = 25C unless otherwise noted

Parameter

Value

Units

V CBO

Collector-Base Voltage

700

V CEO

Collector-Emitter Voltage

400

V EBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (TC = 25C)

75

TJ

Junction Temperature

150

TSTG

Storage Temperature

-65 ~ 150

2007 Fairchild Semiconductor Corporation

FJP3305 Rev. 1.0.0

www.fairchildsemi.com
1

FJP3305 High Voltage Fast-Switching NPN Power Transistor

October 2008

Symbol

TC = 25C unless otherwise noted

Parameter

Conditions

Min.

Typ.

Max

Units

BV CBO

Collector-Base Breakdwon Voltage

IC = 500mA, IE = 0

700

BV CEO

Collector-Emitter Breakdown Voltage

IC = 5mA, IB = 0

400

BV EBO

Emitter-Base Breakdown Voltage

IE = 500mA, IC = 0

ICBO

Collector Cut-off Current

VCB = 700V, IE = 0

mA

IEBO

Emitter Cut-off Current

VEB = 9V, IC = 0

mA

hFE1
hFE2

DC Current Gain *

VCE = 5V, IC = 1A
VCE = 5V, IC = 2A

V CE(sat)

Collector-Emitter Saturation Voltage

IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A

0.5
0.6
1.0

V
V
V

V BE(sat)

Base-Emitter Saturation Voltage

IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A

1.2
1.6

V
V

fT

Current Gain Bandwidth Product

VCE = 10V, IC = 0.5A

C ob

Output Capacitance

VCB = 10V, f = 1MHz

tON

Turn On Time

tSTG

Storge Time

tF

Fall Time

VCC = 125V, IC = 2A
IB1 = -IB2 = 0.4A
RL = 62.5W

19
8

35
40

MHz
65

pF
0.8

ms

4.0

ms

0.9

ms

* Pulse Test: PW 300ms, Duty Cycle 2%

hFE Classification
Classification

H1

H2

hFE1

19 ~ 28

26 ~ 35

2007 Fairchild Semiconductor Corporation

FJP3305 Rev. 1.0.0

www.fairchildsemi.com
2

FJP3305 High Voltage Fast-Switching NPN Power Transistor

Electrical Characteristics

Figure 1. Static Characteristic

Figure 2. DC Current Gain (R-Grade)

100

5.0

VCE = 5V

4.5

IC [A], COLLECTOR CURRENT

4.0

IB = 300mA

hFE, DC CURRENT GAIN

3.5
3.0
2.5

IB = 100mA

2.0
1.5

Ta = 75 C

IB = 50mA

1.0

Ta = 125 C

Ta = - 25 C

Ta = 25 C

10

0.5
0.0

1
0.01

10

0.1

Figure 3. DC Current Gain (O-Grade)

10

VCE(sat) [V], SATURATION VOLTAGE

VCE = 5V
O

Ta = 75 C

hFE, DC CURRENT GAIN

Ta = 125 C

Ta = - 25 C

Ta = 25 C

10

1
0.01

0.1

IC = 4 IB
O

Ta = 125 C
1

Ta = 75 C
O

Ta = - 25 C

0.1

Ta = 25 C

0.01
0.01

10

0.1

Figure 5. Saturatin Voltage (O-Grade)

10

Figure 6. Saturation Voltage (R-Grade)

10

10

IC = 4 IB

VBE(sat) [V], SATURATION VOLTAGE

VCE(sat) [V], SATURATION VOLTAGE

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CUTRRENT

Ta = 125 C
1

Ta = 75 C
O

Ta = - 25 C
0.1
O

Ta = 25 C

0.1

IC = 4 IB

Ta = 25 C

Ta = - 25 C

Ta = 125 C

Ta = 75 C

0.1

0.01
0.01

10

IC [A], COLLECTOR CURRENT

0.1

10

IC [A], COLLECTOR CURRENT

2007 Fairchild Semiconductor Corporation

FJP3305 Rev. 1.0.0

10

Figure 4. Saturation Voltage (R-Grade)

100

0.01
0.01

IC [A], COLLECTOR CUTRRENT

VCE [V], COLLECTOR-EMITTER VOLTAGE

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FJP3305 High Voltage Fast-Switching NPN Power Transistor

Typical Performance Characteristics

(Continued)

Figure 7. Saturation Voltage (O-Grade)

Figure 8. Switching Time

10

10

tF & tSTG [ms], SWITCHING TIME

VCE(sat) [V], SATURATION VOLTAGE

IC = 4 IB

1 Ta = - 25 C

Ta = 25 C

Ta = 125 C

Ta = 75 C

0.1

0.01
0.01

0.1

tSTG
1

tF
0.1

IB1 = - IB2 = 0.4A

VCC = 125V
0.01
0.1

10

10

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

Figure 9. Reverse Biased Safe Operating Area

Figure 10. Forward Biased Safe Operating Area

100

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

10

IB1=2A, RB2=0

0.1
O

TC = 25 C
Single Pulse
0.01

100

1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

500m s

5ms

IC (DC)

VCC=50V, L=1mH
1
10

1ms

IC (Pulse)

10

10

100

1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 11. Power Derating

100

PC[W], POWER DISSIPATION

90
80
70
60
50
40
30
20
10
0

25

50

75

100

125

150

175

Tc[ C], CASE TEMPERATURE

2007 Fairchild Semiconductor Corporation

FJP3305 Rev. 1.0.0

www.fairchildsemi.com
4

FJP3305 High Voltage Fast-Switching NPN Power Transistor

Typical Performance Characteristics

FJP3305 High Voltage Fast-Switching NPN Power Transistor

Package Dimension

Dimensions in Millimeters
2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0

www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31

2008 Fairchild Semiconductor Corporation

FJP3305 Rev. A1

www.fairchildsemi.com
6

FJP3305 High Voltage Fast-Switching NPN Power Transistor

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