Single P-Channel PowerTrench MOSFET

-12 V, -10 A, 16 m
Features

General Description

Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 A

This device is designed specifically for battery charge or load

switching in cellular handset and other ultraportable
applications. It features a MOSFET with low on-state resistance.

Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 A

Max rDS(on) = 82 m at VGS = -1.8 V, ID = -4.5 A

The MicroFET 2X2 package offers exceptional thermal

performance for its physical size and is well suited to linear mode
applications.

Low profile - 0.8 mm maximum - in the new package

MicroFET 2X2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant

Pin 1

G
Bottom Drain Contact

Drain

Source

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings TA = 25C unless otherwise noted

Symbol
VDS

Drain to Source Voltage

Parameter

VGS

Gate to Source Voltage

Drain Current

ID

-Continuous

(Note 1a)

-Pulsed

PD
TJ, TSTG

Ratings
-12

Units
V

-10
-40

Power Dissipation

(Note 1a)

2.4

Power Dissipation

(Note 1b)

0.9

Operating and Storage Junction Temperature Range

-55 to +150

A
W
C

Thermal Characteristics
RJC

Thermal Resistance, Junction to Case

RJA

Thermal Resistance, Junction to Ambient

(Note 1a)

6.9
52

RJA

Thermal Resistance, Junction to Ambient

(Note 1b)

145

C/W

Package Marking and Ordering Information

Device Marking
A95

Device
FDMA905P

2011 Fairchild Semiconductor Corporation

FDMA905P Rev.C1

Package
MicroFET 2X2

Reel Size
7

Tape Width
8 mm

Quantity
3000 units

www.fairchildsemi.com

FDMA905P Single P-Channel PowerTrench MOSFET

October 2011

FDMA905P

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain to Source Breakdown Voltage

ID = -250 A, VGS = 0V

BVDSS
TJ

Breakdown Voltage Temperature

Coefficient

ID = -250 A, referenced to 25 C

IDSS

Zero Gate Voltage Drain Current

VDS = -9.6 V, VGS = 0 V

-1

IGSS

Gate to Source Leakage Current

VGS = 8 V, VDS = 0 V

100

nA

-1.0

-12

V
-4.3

mV/C

On Characteristics
VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = -250 A

VGS(th)
TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = -250 A, referenced to 25 C

2.6

rDS(on)

Static Drain to Source On Resistance

gFS

Forward Transconductance

-0.4

-0.7

mV/C

VGS = -4.5 V, ID = -10 A

14

VGS = -2.5 V, ID = -8.9 A

17

16
21

VGS = -1.8 V, ID = -4.5 A

21

82

VGS = -4.5 V, ID = -10 A, TJ = 125 C

16

21

VDD = -5 V, ID = -10 A

50

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = -6 V, VGS = 0 V,
f = 1 MHz

2559

3405

pF

490

735

pF

437

655

pF

11

20

ns

11

20

ns

120

192

ns

59

94

ns

21

29

nC

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Qg

Total Gate Charge

Qgs

Gate to Source Charge

Qgd

Gate to Drain Miller Charge

VDD = -6 V, ID = -10 A,
VGS = -4.5 V, RGEN = 6

VDD = -6 V, ID = -10 A,
VGS = -4.5 V

3.5

nC

4.2

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = -2 A

(Note 2)

-0.6

-1.2

VGS = 0 V, IS = -10 A

(Note 2)

-0.8

-1.2

IF = -10 A, di/dt = 100 A/s

21

34

ns

6.1

12

nC

Notes:
1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by
the user's board design.
b. 145 C/W when mounted on a
minimum pad of 2 oz copper.

a. 52 C/W when mounted on

a 1 in2 pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %.
.

2011 Fairchild Semiconductor Corporation

FDMA905P Rev.C1

www.fairchildsemi.com

FDMA905P Single P-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted

40

2.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

VGS = -4.5 V

-ID, DRAIN CURRENT (A)

VGS = -3 V

30
VGS = -2.5 V
VGS = -1.8 V

20

10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX

0
0

0.5

1.0

1.5

2.0
VGS = -1.8 V

1.5

1.0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX

10

20

30

40

-ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure 2. Normalized On-Resistance vs

Drain Current and Gate Voltage

1.4

60

rDS(on), DRAIN TO

ID = -10 A
VGS = -4.5 V

1.2

1.0

0.8
-75

-50

SOURCE ON-RESISTANCE (m)

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

VGS = -4.5 V

0.5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX

ID = -10 A

40
TJ = 125 oC

20
TJ = 25 oC

0
1.0

-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)

1.5

2.0

2.5

3.0

3.5

4.0

4.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance

vs Junction Temperature

Figure 4. On-Resistance vs Gate to

Source Voltage
100
-IS, REVERSE DRAIN CURRENT (A)

40
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX

-ID, DRAIN CURRENT (A)

VGS = -3 V

VGS = -2.5 V

30
VDS = -5 V

20
TJ = 150 oC
TJ = 25 oC

10
TJ = -55 oC

VGS = 0 V

10

TJ = 150 oC

1
TJ = 25 oC

0.1
0.01

TJ = -55 oC

0.001
0

0.5

1.0

1.5

2.0

Figure 5. Transfer Characteristics

2011 Fairchild Semiconductor Corporation

FDMA905P Rev.C1

0.2

0.4

0.6

0.8

1.0

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMA905P Single P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

10000
ID = -10 A

Ciss

VDD = -5 V
CAPACITANCE (pF)

-VGS, GATE TO SOURCE VOLTAGE (V)

4.5

3.0
VDD = -6 V
VDD = -7 V

1.5

Coss

1000

Crss
f = 1 MHz
VGS = 0 V

0
0

10

15

20

100
0.1

25

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

20

Figure 8. Capacitance vs Drain

to Source Voltage

100

100

10

P(PK), PEAK TRANSIENT POWER (W)

-ID, DRAIN CURRENT (A)

10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

1 ms
10 ms

0.1

THIS AREA IS
LIMITED BY rDS(on)

100 ms

SINGLE PULSE
TJ = MAX RATED

1s
10 s

RJA = 145 oC/W

DC

TA = 25 oC

0.01
0.01

0.1

10

100

SINGLE PULSE
RJA = 145 oC/W
TA = 25 oC

10

0.1
-3
10

-2

10

-1

10

100

10

1000

t, PULSE WIDTH (s)

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 9. Forward Bias Safe

Operating Area

Figure 10. Single Pluse Maximum

Power Dissipation

NORMALIZED THERMAL
IMPEDANCE, ZJA

0.1

DUTY CYCLE-DESCENDING ORDER

D = 0.5
0.2
0.1
0.05
0.02
0.01

PDM

t1

0.01

0.001
-3
10

t2

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA

RJA = 145 C/W

-2

10

-1

10

10

100

1000

t, RECTANGULAR PULSE DURATION (s)

Figure 11. Junction-to-Ambient Transient Thermal Response Curve

2011 Fairchild Semiconductor Corporation

FDMA905P Rev.C1

www.fairchildsemi.com

FDMA905P Single P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

2.000

0.10 C

1.00
6

2X

1.35
0.66
2.30

1.05

2.000

NO DRAIN OR GATE
TRACES ALLOWED IN
THIS AREA

(0.47)
0.10 C
PIN#1 LOCATION

2X

3
0.40 TYP

0.65 TYP

RECOMMENDED LAND PATTERN OPT 1

0.8 MAX
0.10 C
(0.20)
0.08 C

0.05
0.00

SEATING
PLANE

1.00
6

(0.30)

PIN #1 IDENT

1.000
0.800

0.33
0.20

3
1.35
0.66 2.30

1.05
(0.56)

1.05
0.95

(0.47)
1

0.65 TYP

0.65

0.25~0.35
1.30

0.10
0.05

3
0.40 TYP

RECOMMENDED LAND PATTERN OPT 2

C A B
C

A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION

MO-229 DATED AUG/2003
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILENAME: MKT-MLP06Lrev2.

2011 Fairchild Semiconductor Corporation

FDMA905P Rev.C1

www.fairchildsemi.com

FDMA905P Single P-Channel PowerTrench MOSFET

Dimensional Outline and Pad Layout

tm

tm

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Definition

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I58

2011 Fairchild Semiconductor Corporation

FDMA905P Rev.C1

www.fairchildsemi.com

FDMA905P Single P-Channel PowerTrench MOSFET

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