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CUPRINS
Forma plasmei si
controlul energetic al
ionilor
Cu
Depuneri Multistrat
Depuneri Multistrat
Depuneri Multistrat
Depuneri Multistrat
Ta
Ta
Co + Cu + MgO
Sticla/ Siliciu
Depuneri Multistrat
Proba 2.10
C0/MgO/Cu
Proba 2.6
Co/MgO/Cu
12
14
Wt %
12
10
Cu
10
Pozitia probei
4
2
Ta/MgO+Cu+Co
12
WtMg Randul 1
WtMg Randul 2
WtMg Randul 3
WtMg Randul 4
10
Pozitia probei
10
Co
Wt %
Wt %
10
WtCo Randul 1
WtCo Randul 2
WtCo Randul 3
WtCo Randul 4
MgO
Ta/MgO+Cu+Co
2
Pozitie probe
10
13.03.09_St1-1_I-V_0-200 A
13.03.09_St1-1_I-V_200-0 A
0.006
0.006
0.004
U(V)
U(V)
0.004
0.002
0.002
0.000
0.000
-25
25
50
75
100
-25
125
25
50
0.008
75
100
125
I( A)
I( A)
St3-3_I-V_0-100mA
St3-3_I-V_100-0mA
0.008
0.006
0.006
0.004
U(V)
U(V)
0.004
0.002
0.002
0.000
0.000
-0.002
0
20
40
60
I(mA)
80
100
20
40
60
I(mA)
80
100
-4
-6
-2
-8
-10
-12
-14
-16
-18
-2
-4
-6
-8
-20
-10
-22
Si_2-2
-24
-0.02
-0.01
0.00
0.01
Si_1-4
-12
0.02
-0.03
B (T)
-0.02
-0.01
0.00
0.01
0.02
0.03
0.04
B (T)
Concentratie mare de Co
Concentratie mare de Cu
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
Si_1-10
-10
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
0.04
B (T)
MR
Gauss FIT
MR%
-0.06
-0.04
-0.02
0.00
0.02
B (T)
0.04
0.06
0.08
0.10
Proba 2.3
MR (%)
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
C
Gauss fit of proba29ne_C
-0.4
-0.2
0.0
0.2
0.4
0.6
B_analog (T)
Proba 2.9
100
nm
FeCu
prob no. 5
dFe=32.5 cm
dCu=38.5 cm
non treated
thermal treated
0.00
-0.05
-0.10
-0.15
(Rh/R0)-1 (%)
-0.20
-0.25
-0.30
-0.35
-0.40
-0.45
-0.50
-0.55
-0.60
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
NiCu
prob no. 6
dNi=32.9 cm
dCu=38.2 cm
non treated
thermal treated
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
B(T)
NILPRP
prob no. 11
Cu-permalloy
non treated
0
treated at 350 C (60 min)
dCu=35.8 cm
dpermalloy=39.5 cm
0.05
0.00
-0.05
-0.10
-0.15
(Rh/R0)-1 (%)
-0.20
-0.25
-0.30
-0.35
-0.40
-0.45
-0.50
-0.55
-0.60
-0.65
-2000
-1500
-1000
-500
500
B (G)
GMR in Cu-permalloy
1000
1500
2000
a)
b)
Filme compozite
Substrat
Ecran
Catod 1
Nacela
Catod 2
Material pentru
evaporare
Film characterization
Sample
Distance to
W rod
(mm)
Thickness
Hardness
(m)
(GPa)
(at%)
(at%)
C-W 1
200
1.4
5.2
94.8
C-W 2
220
1.6
11
9.5
89.5
C-W 3
240
1.9
10
15
85
C-W 4
260
2.0
14
20
80
C-W 5
275
2.1
16
25
75
0.6
Coefficient of friction
0.5
0.4
0.3
C-W 1
C-W 2
C-W 3
Sample name
C-W 4
C-W 5
(DLC) structure
SAED
5nm
HRTEM
Coefficient of friction
1.2
1.0
0.8
0.6
Tribological test:
Type: Ball-on disc
Ball: 6mm diameter
Load: 1 N
Sliding speed: 5mm/s
Ni coating on Fe
Ni-C (3/1) on Fe
Ni-C (3/3) on Fe
Ni-C (3-4) on Fe
Ni-C (3-5) on Fe
C coating on Fe
0.4
0.2
0
Sliding distance, m
10
12
Coefficient of friction
0.35
0.30
0.25
0.20
Ni-C (3/1) on Fe
Ni-C (3/3) on Fe
Ni-C (3-4) on Fe
Ni-C (3-5) on Fe
C coating on Fe
0.15
0
Sliding distance, m
10
Images of the structure of the upper layer: tubular features with about 10 nm width
and 50-100 nm length appear together with small grains with a lateral size of about 5
nm. The mentioned features are surrounded by a brighter matrix.
High resolution image of grains in the upper layer: in most of the grains a
crystalline structure is visible, while the surrounding matrix is amorphous.
2 nm
High resolution image of grains in the upper layer: in most of the grains a
crystalline structure is visible, while the surrounding matrix is amorphous.
30 mm
20 mm
26 mm
Bias:
+430 V
Bias:
0V
Bias:
-750 V
0V
2500
120
60
2000
a.u.
a.u.
a.u.
80
Bias: -750 V
2500
Bias: O V (grounded)
2000
100
3000
Be (101)
3000
Bias: + 430V
140
3500
Be (002)
3500
160
-750 V
1500
1500
1000
1000
500
500
Be (002)
+430 V
Be (101)
Bias:
40
42
44
46
48
50
52
54
42
44
46
48
50
52
54
42
44
46
48
50
52
54
56
Concluzii
Folosind metoda TVA (arc termoionic in vid) sau obtinut filme nanostructurate,
functionale cu aplicatii in:
Electronica (filme magnetorezistive)
Mecanica (lubrifianti solizi)
Tehnologii nucleare (filme compacte pentru
acoperirea peretilor instalatiilor de fuziune)