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A VERY FLEXIBLE BICMOS LOW-VOLTAGE HIGH-PERFORMANCE

SOURCE FOLLOWER
Carlo Fiocchi', Umberto Gatti (IV-IEEE)~
'Mikron AG
Corso Mazzini 3,27100 Pavia, Italy
21taltel S.p.A., Research & Development Center
20019 Settimo Milanese, Milano, Italy
Tel. +39 02 43887415: E-Mail: umberto.gatti@italtel.it

ABSTRACT

is replicated at the emitter of Q1, but here it is also amplified


at the collector of the same transistor.

This paperpresents a new high performance source follower, which features very low output impedance and excellent
driving capability, while only requiring a supply of one
threshold plus two saturation voltages. In fact, its output
conductance can be increased by a factor > 500 with a suitable local loop, making this cell suitable for driving loads
up to some tenths of ohms. Using this basic block, a novel
class AB push-pull operational amplifier has been designed. It achieves good performance (output quiescent current = 1.2 @, peak output current > 200 @, max.
capacitive load = I nF), with a supply voltage of 1.3 V and
a total power consumption of only 3.7pW.

1. INTRODUCTION

Figure 1. Conventional source follower with local


feedback (SFLF)

The increasing demand for chip-sets for all portable battery


operated devices (watches, calculators, pagers, mobile telephones, etc.) together with ever thinner gate-oxide thicknesses have been incentivating the design of low-voltage
low-power circuits. To achieve both these goals new topologies and basic blocks need to be studied. The source follower is one of the most widely used building blocks [ 11. It
presents low output impedance and is commonly utilised to
decouple two successive sections of a processing chain or to
drive low impedance loads as a final output stage. However,
it suffers from some limitations. The main problem is that
output resistance is poor even for large bias currents. An alternative solution, which aims at improving the above mentioned performance is the so-called "source follower with
local feedback" (SFLF) [2]. Indeed, a classic way to reduce
the output resistance of a gain stage is to introduce a feedback. Fig. 1 shows a BiCMOS source follower with additional circuitry that can be identified as a local feedback
loop. As for conventional source followers, the input signal

The amplified signal is fed to the input of M2 which operates as the input element of a second gain stage. A feedback
loop is established through the Ql-M2 path. Thus, its output
conductance g,l is increased by a factor gm2rds3 with respect to a conventional solution. The minimum supply for
this structure is limited to one threshold and three saturation
voltages. For a conventional process (Vths = 0.7 V and V,,
= 0.2 V) a supply of 1.3 V is needed at least. Unfortunately,
one drawback is this loop's asymmetrical and limited output
current driving capability (operation in class A). While the
stage is able to source a high current, it can sink only a limited one. This behaviour is suitable for charging loads connected to ground, but precludes the use of SFLF as a driving
stage for class AB output stages. Moreover, the dependence
of the output conductance on the biasing current (as will be
shown in the next section) is not very efficient and leads to
an output impedance that may not be low enough for driving
off-chip applications. In addition, although the distortion
due to the modulation of the base-emitter voltage of Q1 is

0-7803-5471-0/99/$10.0001999IEEE

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reduced by the loop gain, this performance may not be satisfactory in the presence of very low impedance loads. Finally, the upper dynamic range of the Q 1 collector is limited
by VDD - Vgs2, thus limiting the input swing.

technology) without sacrificing circuit performance, because a lateral PNP need only be used for the biasing.
output
Conductance

2. BASIC TOPOLOGY OF THE PROPOSED SOURCE FOLLOWER


One possible solution for the above mentioned problems of
the source follower with local feedback is shown in Fig. 2a.
Here, the feedback which is made up by transistor M4, acts
on the lower bias transistor, M2: the signal current sourced
or sunk on the load is furnished by M2, while the current in
Q1 is set equal to I, even in presence of an input signal.
Thus, the modulation of the base-emitter voltage of Q1 is
minimised, with benefits on the distortion. The output conductance is now given by gmlgm2rds5.In principle, the multiplying factor gm2rds5is of the same order of magnitude as
that one in the SFLF.

CMOS
Currents
Dependence

BiCMOS
Currents
Dependence

Table 1. Comparison between output conductance and


current dependencies in SFLF and in the proposed
structure for CMOS and BiCMOS implementation

Another interesting feature of the proposed topology is


shown in Fig. 3. It is easy to transform the BiCMOS implementation of Fig. 2a into a NPN-only one.

a)

Figure 3. Proposed source follower with local feedback


implemented with NPN-only technology

Figure 2. Proposed source follower with local feedback:


a) BiCMOS implementation; b) CMOS implementation

However, a careful look at current dependencies (see Table


1) indicates that the proposed solution ensures greater flexibility. The Table relates the BiCMOS implementation of
the new source follower to a pure CMOS one (Fig. 2b). The
above table, shows that in the proposed circuit, an increase
in current I, achieves a stronger improvement in the output
conductance than in SFLF. This factor leads to lower current consumption while maintaining the same output impedance. Similar behaviour characterises the harmonic
distortion. Moreover, the input dynamic range in the proposed structure is better than in SFLF because the Q1 collector can rise at one saturation voltage below VDD, while
the supply itself can be as low as one threshold and two saturation voltages. In this manner it is possible to take advantage of more advanced NPN-only technology (usually faster
and with more linear parasitic capacitances than BiCMOS

In contrast, the SFLF solution also requires a PNP in the signal path to substitute M2, thus drastically lowering the
speed of the feedback loop. A resistor Rb and a capacitance
Cb have been added to the feedback to improve the dynamic
range (Rb) and high-frequency performance (ct,).

3. BICMOS LOW-VOLTAGE PUSH-PULL


OPERATIONAL AMPLIFIER
The attractive features of the above described source follower make its use possible as key block in a novel lowvoltage single-stage class AB push-pull operational amplifier. The target of this class of circuits is to reduce the quiescent power consumed while retaining sufficient speed and
driving capabilities even with very heavy loads (either a
small resistor or a large capacitor). The proposed pull-down
section is illustrated in Fig. 4.

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Moreover, implementing the traditional push-pull principle


in BiCMOS technology is not straightforward, since no
complementary bipolar devices are available to substitute nchannel and p-channel transistors. Instead, in the proposed
solution, there is no need for PNP devices in the signal path,
at the same time as it takes advantage of NPN availability
in terms of speed and gain.

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It is important to note that class AB operation is achieved


without using a positive feedback loop (such as in [6]), so
no stability problems arise. Moreover, it is simpler than [5],
which includes two op. amps. and suffers from distortion
due to the interaction of the two op. amps. during transients.

Figure 4. Use of the proposed circuit as an input stage


for a push-pull operational amplifier (pull-down section)

The simplified schematic of the novel operational amplifier


is shown in Fig. 5.

Transistor 4 2 has been added to provide the opposite input


of the stage, while MNO represents the pull-down transistor. Since the positive signal Vinpapplied to Q1 is replicated
with very low output impedance and distortion at the common emitters (node E), the whole input differential signal
Vi, = Vinp- Vi,, appears on the Q2 base-emitter junction in
a push-pull fashion. For a large Vi, signal, i.e. positive at
Vinnand negative at Vinp,the voltage drop across 4 2 causes
a large increase in the current across M2. As a consequence,
a current which is much larger than the quiescent level is
available for mirroring to the pull-down transistor and thus
delivering to the load. In contrast, the quiescent current is
well defined and controlled by the matching of identical (or
ratioed) devices. As already pointed out, the SLFL cannot
be used in place of the proposed one in building a push-pull
op. amp., since the lower bias transistor is not able to sink
the current delivered by Q2, when Vinnis positive. The current generator I1 in Fig. 4 was added to guarantee that the
current mirrored in the output stage by M2-MNO is exactly
the same current which flows across Q2. This topology allows a shorter signal path and less current consumption.

1"";
4

The proposed approach is quite similar to the one presented


in [3].However, it exhibits some specifically improved features, which are listed below. In the novel solution current
saturation occurs when the current level is such that the
voltage drop across the input path (Ql, M2 and current generator I) is equal to the supply, i.e. V,, + 3VSat= Vsupply,
at least one threshold less than in [3].This allows a low-supply voltage (< 1.5 V) to be used without sacrificing driving
capability and distortion performance. Moreover, the lower
dynamic range of the proposed structure is superior than in
[ 3 ] ,because the former is limited by Vths + 2VSat,while the
latter by 2V,h, + 3VSat.
Other important performance enhancements are:
nominal doubling of differential gain (+6 dB) with respect to [ 3 ] , obtained by doubling the transconductance
(2gmagainst gm) with benefits also to the bandwidth
superior insensitivity of the quiescent current to variation
in processing, temperature and supply compared with [4]

I *
I

Figure 5. Simplified schematic of the novel push-pull


class AB operational amplifier

Branch 1 drives the pull-down transistor, MNO, while


branch 2 drives the pull-up one, MPO. An high compliance
current mirror [7], MB1 and MB2, has been introduced to
drive MPO, so as to optimise the upper dynamic range.

4. SIMULATION RESULTS
An operational amplifier based on the proposed idea was
simulated using conventional double-poly double-metal 0.8
pm BiCMOS technology.
Fig. 6 shows the simulated frequency response of the op.
amp. with a 1 nF capacitive load. The differential DC gain
obtained is 57 dB, the gain bandwidth product >10 kHz and
the phase margin is 90 degrees.
Fig. 7 shows the step response (0.5 V) of the push-pull operational amplifier in unity gain configuration.

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block is used to design a novel class AB push-pull operational amplifier capable of working with a supply voltage as
low as 1.3 V, while achieving satisfactory performance at
the same time. This behaviour is obtained using a conventional 0.8 p m BiCMOS process, with no need for expensive
special low threshold devices. The results from simulations
demonstrate the validity of the proposed solution; in particular, the Slew-Rate performance (0.2 V/ps) obtained with a
power consumption of only 3.7 pW attains the state-of-the
art. Thanks to its flexibility, the proposed source follower
can be easily employed in a variety of circuits as well.

I Feature

Figure 6. Simulated frequency response of the proposed


push-pull operational amplifier (C, = 1 pF, VDD = 1.3 V)

I Performance

Gain

57 dB

Bandwidth (Cl= 1 nF)

> 10 kHz

I Slew-Rate(Cl=

I Output Quiescent Curr.


Peak Output Current
Input Dynamic Range
(Vcm = 1 V)
~~

Figure 7. Simulated step response of the proposed pushpull operational amplifier (C, = 1 pF, VDD = 1.3 V,
= 0.5 v, v,, = 1 V)

I 0.2 V / p
I 1.2 pA
~~

1 nF)

-1

1
1

> 200 pA

M.25 v

~~

THD (0.5 Vpp@1 kHz)

-58 dB

Power Consumption

3.7 pW@1.3 Vsupply

Table 2. Performance summary of the novel class AB


operational amplifier

It can be observed that we obtained a Slew-Rate of 0.2 Vlps


corresponding to a peak output current of 200 pA, while the
output quiescent current is only 1.2 pA, which means an efficiency > 80. The settling time indicated in the same figure
is around 65 ps. The Total Harmonic Distortion when a 0.5
VPp@1 kHz input sinewave is applied is -58 dB.
Table 2 contains a summary of the simulated performance
of the novel push-pull class AB operational amplifier.

6. REFERENCES
P. R. Gray, R. G. Meyer, Analysis and Design of Analog
Integrated Circuits - 3rd Ed., John Wiley&Sons, 1993

G. Giustolisi, G. Palmisano, G. Palumbo, 1.5 V Power


Supply, CMOS Voltage Squarer,Elect. Lett., Vol. 33, N. 13,
June 1997, pp. 1 134-1135
R. Castello, P. R. Gray, A High-Performance Micropower

The results demonstrate the validity of the architecture used


to achieve class AB operation with a power supply voltage
of only 1.3 V and a static power consumption of 3.7 pW.

Switched-Capacitor Filter, IEEE Journal of Solid State


Circuits, Vol. SC-20, Dec. 1985, pp. 1122-1132
M. Blazes, Two Novel Fully Complementary Self-Biased
CMOS Differential Amplifiers, IEEE Journal of Solid State
Circuits, Vol. SC-26, Feb. 1991, pp. 165-168

The proposed circuit was designed using the same technology and its size is approximately 0.025 mm2. A capacitance
of about 5 pF was added to the output terminal as a compensation capacitance.

F. Wang, R. Heineke, R. Harjani, A Low Voltage Class AB


CMOS Amplifier, Proc. ISCAS 1996, pp. 393-396
L. Callewaert,W. Sansen, Class AB CMOS Amplifiers with
High Efficiency, IEEE Journal of Solid State Circuits, Vol.
SC-25, June 1990, pp. 684-691

5. CONCLUSION
In this paper we have presented a source follower based on
new local feedback loop which allows the limitations shown
by previously proposed solutions to be overcome. This

P. J. Crawley, G . W. Roberts, High-Swing MOS Current

Mirror with Arbitrarily High Output Resistance,Elect. Lett.,


Vol. 28, N.4, pp. 361-363, Feb. 1992

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