TSUS4300

Vishay Semiconductors

GaAs Infrared Emitting Diode in 3 mm (T1) Package

Description
TSUS4300 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear,
blue tinted plastic package. Its lens provides a
high radiant intensity without external optics.

Features
D
D
D
D
D
D
D
D

High radiant power and radiant intensity

Low forward voltage
Suitable for DC and high pulse current operation
Standard T1( 3 mm) package
Angle of half intensity = 16

94 8636

Peak wavelength lp = 950 nm

High reliability
Good spectral matching to Si photodetectors

Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo
detectors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor
TEFT 4300.

Absolute Maximum Ratings

Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient

Document Number 81053

Rev. 2, 20-May-99

Test Conditions

tp/T=0.5, tp=100 ms
tp=100 ms

x 5sec, 2 mm from case

Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA

Value
5
100
200
2
170
100
55...+100
55...+100
260
450

Unit
V
mA
mA
A
mW
C
C
C
C
K/W

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TSUS4300
Vishay Semiconductors
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
g
Temp. Coefficient of VF
Reverse Current
Breakdown Voltage
Junction Capacitance
Radiant Intensity
y
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time

Test Conditions
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 ms
IF = 100 mA
VR = 5 V
IR = 100 mA
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 ms
IF = 100 mA, tp = 20 ms
IF = 20 mA

Symbol
VF
VF
TKVF
IR
V(BR)
Cj
Ie
Ie

Min

Typ
1.3
2.2
1.3

100
5

40
30
18
160
20
0.8
16
950
50
0.2
800
400
800
400

fe

TKfe

lp
Dl

IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A

Max
1.7

TKlp
tr
tr
tf
tf

Unit
V
V
mV/K
mA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns

Typical Characteristics (Tamb = 25_C unless otherwise specified)

125
IF Forward Current ( mA )

PV Power Dissipation ( mW )

250
200

150
RthJA
100

50

100

75
RthJA
50

25

0
0

94 8029 e

20

40

60

80

100

Tamb Ambient Temperature ( C )

Figure 1. Power Dissipation vs. Ambient Temperature

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0
94 7916 e

20

40

60

80

100

Tamb Ambient Temperature ( C )

Figure 2. Forward Current vs. Ambient Temperature

Document Number 81053

Rev. 2, 20-May-99

TSUS4300
Vishay Semiconductors
1000
I e Radiant Intensity ( mW/sr )

I F Forward Current ( A )

101

tp / T = 0.01, IFM = 2 A
0.02
100

0.05
0.1
0.2

100

10

0.5
101
102
94 7947 e

0.1
101
100
101
tp Pulse Duration ( ms )

102

100

Figure 3. Pulse Forward Current vs. Pulse Duration

1000

103

Fe Radiant Power ( mW )

IF Forward Current ( mA )

104

Figure 6. Radiant Intensity vs. Forward Current

104

102
101
100
101

100

10

0.1
0

VF Forward Voltage ( V )

94 7996 e

100

101
102
103
IF Forward Current ( mA )

947980

Figure 4. Forward Current vs. Forward Voltage

104

Figure 7. Radiant Power vs. Forward Current

1.2

1.6

1.1

1.2
IF = 10 mA

I e rel ; Fe rel

V Frel Relative Forward Voltage

101
102
103
IF Forward Current ( mA )

94 7979 e

1.0

IF = 20 mA
0.8

0.9
0.4
0.8
0.7
0

94 7990 e

20

40

60

80

Tamb Ambient Temperature ( C )

Figure 5. Relative Forward Voltage vs.

Ambient Temperature

Document Number 81053

Rev. 2, 20-May-99

0
10 0 10

100
94 7993 e

50

140

100

Tamb Ambient Temperature ( C )

Figure 8. Rel. Radiant Intensity\Power vs.

Ambient Temperature

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TSUS4300
Vishay Semiconductors
0
I e rel Relative Radiant Intensity

Fe rel Relative Radiant Power

1.25
1.0

0.75
0.5

0.25

10

20

30

40
1.0
0.9

50

0.8

60
70

0.7

80

IF = 100 mA
0
900
94 7994 e

950

1000

l Wavelength ( nm )

Figure 9. Relative Radiant Power vs. Wavelength

0.6

0.4

0.2

0.2

0.4

0.6

94 7981 e

Figure 10. Relative Radiant Intensity vs.

Angular Displacement

Dimensions in mm

9612208

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Document Number 81053

Rev. 2, 20-May-99

TSUS4300
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 81053

Rev. 2, 20-May-99

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