SPP08N80C3

SPA08N80C3

Final data

Cool MOS Power Transistor

Feature
New revolutionary high voltage technology

VDS

800

RDS(on)

0.65

ID

Ultra low gate charge

Periodic avalanche rated

P-TO220-3-31

P-TO220-3-1

Extreme dv/dt rated

Ultra low effective capacitances

Improved transconductance

P-TO220-3-31

P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

SPP08N80C3

P-TO220-3-1

Q67040_S4436

08N80C3

SPA08N80C3

P-TO220-3-31 Q67040-S4437

08N80C3

Maximum Ratings
Parameter

Symbol

Value
SPP

Continuous drain current

Unit
SPA

ID

TC = 25 C

81)

TC = 100 C

5.1

5.11)

24

24

Pulsed drain current, tp limited by Tjmax

ID puls

Avalanche energy, single pulse

EAS

340

340

EAR

0.2

0.2

Avalanche current, repetitive tAR limited by Tjmax

IAR

Gate source voltage

VGS

20

20

Gate source voltage AC (f >1Hz)

VGS

30

30

Power dissipation, TC = 25C

Ptot

104

40

Operating and storage temperature

Tj , Tstg

mJ

ID=1.6A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=8A, VDD =50V

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SPP08N80C3
SPA08N80C3

Final data
Maximum Ratings
Parameter

Symbol

Drain Source voltage slope

dv/dt

Value

Unit

50

V/ns

Values

Unit

VDS = 640 V, ID = 8 A, Tj = 125 C

Thermal Characteristics
Symbol

Parameter

min.

typ.

max.

Thermal resistance, junction - case

RthJC

1.2

Thermal resistance, junction - case, FullPAK

RthJC_FP

3.8

Thermal resistance, junction - ambient, leaded

RthJA

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

80

Soldering temperature,

Tsold

260

K/W

1.6 mm (0.063 in.) from case for 10s 3)

Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter

Symbol

Conditions

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

Drain-Source avalanche

V(BR)DS VGS=0V, ID=8A

Values

Unit

min.

typ.

max.

800

870

2.1

3.9

breakdown voltage
Gate threshold voltage

VGS(th)

ID=470A, VGS =VDS

Zero gate voltage drain current

I DSS

VDS=800V, V GS=0V,

Gate-source leakage current

I GSS

Drain-source on-state resistance RDS(on)

Gate input resistance

RG

Tj=25C

0.5

20

Tj=150C

200

VGS=20V, V DS=0V

100

VGS=10V, ID=5.1A
Tj=25C

0.56

0.65

Tj=150C

1.5

f=1MHz, open drain

0.7

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SPA08N80C3

Final data
Electrical Characteristics
Parameter
Transconductance

Symbol
gfs

Conditions
VDS2*ID*R DS(on)max,

Values

Unit

min.

typ.

max.

5.5

S
pF

ID=5.1A

Input capacitance

Ciss

VGS=0V, VDS=25V,

1100

Output capacitance

Coss

f=1MHz

500

Reverse transfer capacitance

Crss

25

31.8

70

Effective output capacitance,4) Co(er)

VGS=0V,

energy related

VDS=0V to 480V

Effective output capacitance,5) Co(tr)

time related
Turn-on delay time

td(on)

VDD=400V, VGS=0/10V,

25

Rise time

tr

ID=8A,

15

Turn-off delay time

td(off)

RG =10

65

75

Fall time

tf

10

4.6

21

40

52

ns

Gate Charge Characteristics

Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD=640V, ID=8A

VDD=640V, ID=8A,

nC

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=640V, ID=8A

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3Soldering temperature for TO-263: 220C, reflow
4C

o(er)

is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

5C

o(tr)

is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

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SPP08N80C3
SPA08N80C3

Final data
Electrical Characteristics
Parameter

Symbol

Inverse diode continuous

IS

Conditions

Values

Unit

min.

typ.

max.

24

TC=25C

forward current
Inverse diode direct current,

I SM

pulsed
Inverse diode forward voltage

VSD

VGS =0V, IF=IS

1.2

Reverse recovery time

t rr

VR =640V, IF =IS ,

550

ns

Reverse recovery charge

Q rr

diF/dt=100A/s

Peak reverse recovery current

I rrm

24

Peak rate of fall of reverse

dirr /dt

500

A/s

Tj=25C

recovery current
Typical Transient Thermal Characteristics
Value

Symbol

Unit

SPP

SPA

Rth1

0.017

0.017

Rth2

0.032

Rth3

Symbol

Value

Unit

SPP

SPA

Cth1

0.0001741

0.0001741

0.032

Cth2

0.0006598

0.0006598

0.06

0.06

Cth3

0.0009193

0.0009193

Rth4

0.245

0.189

Cth4

0.002607

0.002607

Rth5

0.266

0.414

Cth5

0.005878

0.007619

Rth6

0.101

2.518

Cth6

0.051

0.412

Tj

K/W

R th1

R th,n

T case

Ws/K

E xternal H eatsink

P tot (t)
C th1

C th2

C th,n
T am b

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SPP08N80C3
SPA08N80C3

Final data
1 Power dissipation

2 Power dissipation FullPAK

Ptot = f (TC)

Ptot = f (TC)

120

SPP08N80C3

45

100
35

80

Ptot

Ptot

90

70

30
25

60
20

50

15

40
30

10

20
5

10
0
0

20

40

60

80

100

120

0
0

160

20

40

60

80

100

120

TC

3 Safe operating area

4 Safe operating area FullPAK

ID = f ( VDS )

ID = f (VDS)

parameter : D = 0 , TC=25C

parameter: D = 0, TC = 25C

10

C 150
TC

10 2

10 1

10 1

ID

ID

10 0

10 -1

10 -2 0
10

10 0

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

10

10 -1

10

10

V
VDS

Page 5

10 -2 0
10

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC

10

10

10
V
VDS

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SPP08N80C3
SPA08N80C3

Final data
5 Transient thermal impedance

6 Transient thermal impedance FullPAK

ZthJC = f (tp)

ZthJC = f (tp)

parameter: D = tp/T

parameter: D = tp/t

10 1

10 1

K/W

K/W
10 0

ZthJC

ZthJC

10 0

10 -1

10 -2

10 -4 -7
10

10

-6

10

-5

10

-4

10

-3

s
tp

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

10 -2

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

10 -3

10 -1

10 -3

10

10 -4 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10

-1

tp

7 Typ. output characteristic

8 Typ. output characteristic

ID = f (VDS); Tj =25C

ID = f (VDS); Tj =150C

parameter: tp = 10 s, VGS

parameter: tp = 10 s, VGS

26

13

A
20V
8V
7V

22
20

11

ID

ID

20V
6.5V
6V

10

18
16

6.5V

14

5.5V

8
7

12

6V

10

5V

5.5V

4.5V

3
5V

4
2
0
0

1
s 10

4V

12

16

4V

1
20

26
V
VDS

Page 6

0
0

12

16

20

26
V
VDS

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SPA08N80C3

Final data
9 Typ. drain-source on resistance

10 Drain-source on-state resistance

RDS(on)=f(ID)

RDS(on) = f (Tj)

parameter: Tj=150C, VGS

parameter : ID = 5.1 A, VGS = 10 V

3.6

4V

2.8

RDS(on)

4.5V

RDS(on)

SPP08N80C3

5V

5.5V

2.4
2

2.5
6V

1.6
6.5V

1.2
20V

98%

0.8

typ

1.5
0.4
1
0

10

A
ID

0
-60

13

-20

20

60

100

12 Typ. gate charge

ID = f ( VGS ); VDS 2 x ID x RDS(on)max

VGS = f (Q Gate)
parameter: ID = 8 A pulsed

parameter: tp = 10 s
26

16

SPP08N80C3

25C

20

12

VGS

18

ID

180

Tj

11 Typ. transfer characteristics

22

16

0,2 VDS max

0,8 VDS max

10

14
8

12

150C

10

8
4

6
4

2
0
0

10

12

14

16

V 20
VGS

Page 7

0
0

10

20

30

40

50

nC

70

QGate

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SPP08N80C3
SPA08N80C3

Final data
13 Forward characteristics of body diode

14 Avalanche SOA

IF = f (VSD)

IAR = f (tAR)

parameter: Tj , tp = 10 s

par.: Tj 150 C

10 2

SPP08N80C3

6
1

IF

IAR

10

10 0

Tj(START)=25C

Tj = 25 C typ

Tj = 150 C typ
Tj = 25 C (98%)
Tj = 150 C (98%)
10 -1
0

0.4

0.8

1.2

1.6

2.4 V

Tj(START)=125C

0 -3
10

10

-2

10

-1

10

10

10

s 10
tAR

VSD

15 Avalanche energy

16 Drain-source breakdown voltage

EAS = f (Tj)

V(BR)DSS = f (Tj)

par.: ID = 1.6 A, VDD = 50 V

350

980

SPP08N80C3

mJ

V(BR)DSS

940

E AS

250

200

920
900
880
860
840

150

820
800

100

780
760

50

740
0
25

50

75

100

150

C
Tj

720
-60

-20

20

60

100

180

Tj
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SPP08N80C3
SPA08N80C3

Final data
17 Avalanche power losses

18 Typ. capacitances

PAR = f (f )

C = f (VDS)

parameter: EAR =0.2mJ

parameter: VGS =0V, f=1 MHz

10 4

200

pF

Ciss
10 3

140

PAR

160

120

10 2

Coss

100
10 1

80

Crss

60
10 0

40
20
0 4
10

10

10

Hz

10 -1
0

100

200

300

400

500

600

800
V
VDS

19 Typ. Coss stored energy

Eoss=f(VDS)
9

E oss

7
6
5
4
3
2
1
0
0

100

200

300

400

500

600

800
V
VDS

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Final data

SPP08N80C3
SPA08N80C3

Definition of diodes switching characteristics

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SPP08N80C3
SPA08N80C3

Final data
P-TO-220-3-1
B

4.44

0.05

9.98 0.48

2.8 0.2

1.270.13

13.5 0.5

5.23 0.9

15.38 0.6

10 0.4
3.7 0.2

0.5 0.1

3x
0.75 0.1

2.510.2

1.17 0.22
2x 2.54

0.25

A B C

All metal surfaces tin plated, except area of cut.

Metal surface min. x=7.25, y=12.3

P-TO-220-3-31 (FullPAK)

Please refer to mounting instructions (application note AN-TO220-3-31-01)

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Final data

SPP08N80C3
SPA08N80C3

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 12

2003-07-02

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