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Lecture 6
V. Kamakoti and Shankar Balachandran
Parasitic Capacitance
Switching speeds of MOS systems strongly depend on
the parasitic capacitances associated with MOSFETs
and interconnections
Total Cload on the output of a CMOS gate is the sum of:
Gate capacitance (Cg)
Junction capacitance due to the source and drain
regions and their surroundings (Csb and Cdb)
Interconnect (or routing) capacitance (Cw)
Gate oxide capacitance per unit area,
C ox
0 ox
=
tox
MOSFET Capacitances
xd
xd
xd
Gate Capacitance
Gate capacitance, Cg = Cox WL
Total gate capacitance Cg can be
decomposed in two elements:
1. Overlap capacitance: due to the topological
structure of the MOSFET.
2. Gate-to-Channel capacitance: due to the
interaction between gate voltage and channel
charge.
Gate-to-Channel Capacitance
It has thee components: Cgs, Cgd and Cgb
Region
Cgb
Cgs
Cgd
Cg
Cutoff
CoxWL
CoxWLeff+2CoW
CoxWLeff/2
CoxWLeff/2
CoxWLeff+2CoW
(2/3)CoxWLe
(2/3)CoxWLeff+2C
oW
eff
Linear
Saturation
ff
(C
jsw
= C jsw x j )
C w C pp + C fringe
o ox wl
2 ox
+
h
log h
t
( )
t/h=1
t/h=0.5
Cpp
w
t
h
w/t
Modern Interconnect
Impact of Inter-layer
Capacitance
Area Cap
(fF/m2)
0.088
0.041
0.015
1.660
1.832
--5.951
0.017
0.038
Perim. Cap
(fF/m)
0.054
0.047
0.027
0.399
0.323
0.562
0.630
0.041
0.054
Global
Intermodule
Intercell
Intracell
Clumped = lwire.cwire
j =1
Using Elmore delay formula we can determine the dominant time constant
of the wire, i.e., it is a first-order approximation.
Thank You