TIP42 / TIP42C

PNP Epitaxial Silicon Transistor

Features
Medium Power Linear Switching Applications
Complement to TIP41 Series
TO-220

1.Base

2.Collector

3.Emitter

Ordering Information
Part Number

Top Mark

Package

Packing Method

TIP42

TIP42

TO-220 3L (Single Gauge)

Bulk

TIP42C

TIP42C

TO-220 3L (Single Gauge)

Bulk

TIP42CTU

TIP42C

TO-220 3L (Single Gauge)

Rail

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted.

Symbol

Parameter

Value
TIP42

-40

TIP42C

-100

TIP42

-40

TIP42C

-100

Unit

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

-5

IC

Collector Current (DC)

-6

ICP

Collector Current (Pulse)

-10

IB

Base Current

-2

TJ

Junction Temperature

150

-65 to 150

TSTG

Storage Temperature Range

2000 Fairchild Semiconductor Corporation

TIP42 / TIP42C Rev. 1.1.0

V
V

www.fairchildsemi.com

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

November 2014

Values are at TC = 25C unless otherwise noted.

Symbol
PC

Parameter

Value

Collector Dissipation (TC = 25C)

65

Collector Dissipation (TA = 25C)

Unit
W

Electrical Characteristics
Values are at TC = 25C unless otherwise noted.

Symbol
VCEO(sus)

Parameter
Collector-Emitter Sustaining TIP42
Voltage(1)
TIP42C

ICEO

Collector Cut-Off Current

ICES

Collector Cut-Off Current

IEBO

Emitter Cut-Off Current

hFE

DC Current Gain(1)

VCE(sat)
VBE(on)
fT

Conditions

Collector-Emitter Saturation
Base-Emitter On

IC = -30 mA, IB = 0

Min.

Max.

-40

-100

TIP42

VCE = -30 V, IB = 0

-0.7

TIP42C

VCE = -60 V, IB = 0

-0.7

TIP42

VCE = -40 V, VEB = 0

-400

TIP42C

VCE = -100 V, VEB = 0

-400

VEB = -5 V, IC = 0

Voltage(1)

Voltage(1)

Current Gain Bandwidth Product

-1

VCE = -4 V, IC = -0.3 A

30

VCE = -4 V, IC = -3 A

15

Unit

mA
A
mA

75

IC = -6 A, IB = -600 mA

-1.5

VCE = -4 V, IC = -6 A

-2.0

VCE = -10 V, IC = -500 mA,

f = 1 MHz

3.0

MHz

Note:
1. Pulse test: pw 300 s, duty cycle 2%.

2000 Fairchild Semiconductor Corporation

TIP42 / TIP42C Rev. 1.1.0

www.fairchildsemi.com
2

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

Thermal Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

hFE, DC CURRENT GAIN

VCE = -4V

100

10

1
-0.01

-0.1

-1

-10

-2.0

IC/IB = 10
-1.6

VBE(sat)
-1.2

-0.8

VCE(sat)

-0.4

-0.0
-0.01

-0.1

IC[A], COLLECTOR CURRENT

-10

-100

IC[A], COLLECTOR CURRENT

Figure 1. DC Current Gain

Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage
100

PC[W], POWER DISSIPATION

-100

IC(MAX) (PULSE)
-10

ms
0.5

s
5m

IC(MAX) (DC)

s
1m

IC[A], COLLECTOR CURRENT

-1

-1

TIP42
TIP42A
TIP42B
TIP42C
-10

60

40

20

-0.1
-1

80

-100

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

2000 Fairchild Semiconductor Corporation

TIP42 / TIP42C Rev. 1.1.0

Figure 4. Power Derating

www.fairchildsemi.com
3

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

Typical Performance Characteristics

TIP42 / TIP42C PNP Epitaxial Silicon Transistor

Physical Dimensions

Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

2000 Fairchild Semiconductor Corporation

TIP42 / TIP42C Rev. 1.1.0

www.fairchildsemi.com
4

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Rev. I72

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