NPN 2N5671 2N5672

HIGH CURRENT FAST SWITCHING APPLICATIONS

The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.
They are especially intended for high current, fast switching industrial applications.
Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

VCER

Collector-Emitter
Voltage
Collector-Emitter
Voltage

IC

Collector Current

IB

Base Current

VCEX

PD

VEB = -1.5V
REB = 50
REB <= 50

Total Device Dissipation @ TC = 25

TJ

Junction Temperature

TStg

Storage Temperature

Value
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672

Unit

90
120
120
150

V
V

7.0

120
150
110
140

V
V

30

10

140

200

-65 to +200

Value

Unit

1.25

C/W

THERMAL CHARACTERISTICS
Symbol
RthJC

Ratings
Thermal Resistance, Junction to Case

09/11/2012

COMSET SEMICONDUCTORS

1|4

NPN 2N5671 2N5672

ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted

Symbol
VCEO(SUS)
VCER(SUS)
VCEX(SUS)

Ratings

Test Condition(s)

Collector-Emitter
Sustaining Voltage (*)
Collector-Emitter
Sustaining Voltage (*)
Collector-Emitter
Sustaining Voltage (*)

IC=200 mA, IB=0

IC=0.2 A, RBE=50
IC=0.2 A , VBE=-1.5V
RBE=50

Collector Cutoff Current

VCE=80 V

ICEX

Collector Cutoff Current

VCE=110 V, VEB=-1.5 V
VCE=135 V, VEB=-1.5 V
VCE=100 V, VEB=-1.5 V
TC=150C

IEBO

Emitter Cutoff Current

VBE=7.0 V, IC=0

ICEO

IC=15 A, VCE=2.0 V
hFE

DC Current Gain (*)

IC=20 A, VCE=5.0 V

VCE(SAT)
VBE(SAT)
VBE
fT
Is/b
Es/b
CBO

Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
Base-Emitter Voltage
(*)

IC=15 A, IB=1.2 A
IC=15 A, IB=1.2 A
IC=15 A, VCE=5.0 V

Transition frequency

VCE=10 V, IC=2 A

Second Breakdown
energy (**)
Second Breakdown
energy
Collector-Base
Capacitance

VCE=24 V
VCE=45 V
VBE=-4 V, RBE=20
L=180H
IE= 0, VCB= 10 V
f = 1MHz

2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672

Min

Typ

Max

Unit

--

--

--

--

--

--

10

mA

12
10
15
10

mA

10

mA

20

100

20

0.75

1.5

1.6

50

MHz

5.8
0.9

20

mJ

900

pF

90
120
110
140
120
150

09/11/2012

COMSET SEMICONDUCTORS

2|4

NPN 2N5671 2N5672

ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted

Symbol

ton ts tf

Ratings

Turn-on time Storage

time File time

Test Condition(s)

IC=15 A , VCC=30 V
IB1 = -IB2 =1.2 A

2N5671
2N5672
2N5671
2N5672
2N5671
2N5672

Min

Typ

Max

0.5

1.5

0.5

(*) Pulse Width 300 s, Duty Cycle =1.5%

(**) Pulsed : 1 s, non repetitive pulse

09/11/2012

COMSET SEMICONDUCTORS

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Unit

NPN 2N5671 2N5672

MECHANICAL DATA CASE TO-3

DIMENSIONS (mm)
A
B
C
D
E
G
N
P
R
U
V

min
11
0.97
1.5
8.32
19
10.70
16.50
25
3.84
38.50
29.90

Pin 1 :
Pin 2 :
Case :

typ
-

max
13.10
1.15
1.65
8.92
22
11.1
17.20
27,20
4.21
40.13
30.40

Base
Emitter
Collector

Revised October 2012

Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use
of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without
notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor
does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. Comset Semiconductors products are not authorized for use as critical components in
life support devices or systems.

www.comsetsemi.com
09/11/2012

info@comsetsemi.com
COMSET SEMICONDUCTORS

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